• 한국세라믹학회지
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• 제30권3호
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• pp.206-214
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• 1993

Coherent precipitation of Zn3P2 during Zn diffusion in a GaInAsP/InP heterostructure was studied using high-resolution transmission electron microscopy. Zn-diffusion-induced intermixing of Ga and In across the GaInAsP/InP heterointerface provided a Ga-mixed InP region which was nearly lattice-matched with Zn3P2 crystal and thus allowed thecoherent precipitation of Zn3P2. The Zn3P2 precipitates were preferentially nucleated at stacking faults which were formed to relax interfacial strain built up by the intermixing. The precipitates were grown to planar epitaxial layer along (100) plane in the lattice-matched region. The TEM images and diffraction pettern revealed that the tetragonal Zn3P2 crystals were coherently matched to the fcc structured GaInP matrix by the {{{{ SQRT {2} $\times$ SQRT {2} $\times$2 }} arrangement. The precipitation reaction of Zn3P2 was explained by an atomic migration model based on the kick-out mechanism.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.126-129
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• 2001

A p-n junction was obtained by the deposition of an n-type ZnO thin film on a p-type Zn-doped InP substrate. The Zn-doped InP substrate has been made by the diffusion of Zn with sealed ampoule technique. The ZnO deposition process was performed by pulsed laser deposition (PLD). The p-n junction was formed and showed a typical I-V characteristic. We will also discuss about the realization of an ultraviolet light-emitting diode (LED). The structure of n-ZnO/p-Zn-doped InP could be a good candidate for the realization of an ultraviolet light-emitting diode or an ultraviolet laser diode.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.126-129
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• 2001

A p-n junction was obtained by the deposition of an n-type ZnO thin film on a p-type Zn-doped InP substrate. The Zn-doped InP substrate has been made by the diffusion of Zn with sealed ampoule technique. The ZnO deposition process ws performed by pulsed laser deposition (PLD). The p-n junction was formed and showed a typical I-V characteristic. We will also discuss about the realization of an ultraviolet light-emitting diode (LED). The structure of n-ZnO/p-Zn-doped InP could be a good candidate for the realization of an ultraviolet light-emitting diode or an ultraviolet laser diode.

• Transactions on Electrical and Electronic Materials
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• 제3권1호
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• pp.1-3
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• 2002

A p-n junction was obtained by the deposition of an n-type ZnO thin film on a p-type Zn-doped InP substrate. The Zn-doped InP substrate has been made by the diffusion of Zn with sealed ampoule technique. The ZnO deposition process was performed by pulsed laser deposition (PLD). The p-n junction was formed and showed typical I-V characteristics. We will also discuss about the realization of an ultraviolet light-emitting diode (LED). The structure of n-ZnO/p-Zn-doped InP could be a good candidate for the realization of an ultraviolet light-emitting diode or an ultraviolet laser diode.

• 태양에너지
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• 제11권3호
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• pp.74-83
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• 1991

본 논문은 substrate의 온도를 $200{\pm}1^{\circ}C$ 정도로 유지하며 진공저항 가열 증착법을 이용하여 (p)ZnTe/(n)Si 태양전지와 (n)CdS-(p)ZnTe/(n)Si 복접합 박막을 제작한 후 그 전기적 특성을 조사, 비교하였다. 제작한 (p)ZnTe/(n)Si 태양전지와(n)CdS-(p)ZnTe/(n)Si 복접합 박막에 대하여 $100[mW/cm^2]$의 광조사 하에서 특성을 조사한바 다음과 같은 결과를 얻었다. 단략전류$[mA/cm^2]$ (p)ZnTe/(n)Si:28 (n)CdS-(p)ZnTe/(n)Si:6.5 개방전압[mV] (p)ZnTe/(n)Si:450 (n)CdS-(p)ZnTe/(n)Si:250 충실도, FF (p)ZnTe/(n)Si:0.65 (n)CdS-(p)ZnTe/(n)Si:0.27 변환효율[%] (p)ZnTe/(n)Si:8.19 (n)CdS-(p)ZnTe/(n)Si:2.3 제작된 박막은 열처리에 의해 성능이 향상되지만 (p)ZnTe/(n)Si 태양전지는 약 $470^{\circ}C$ 이상의 온도와 15분 이상의 열처리 시간에서 그리고 (n)CdS-(p)ZnTe/(n)Si 복접합 박막은 약 $580^{\circ}C$ 이상의 온도와 15분 이상의 열처리 시간에서는 박막의 각종 구조결함으로 인한 감소현상을 나타내었다. 열처리 온도의 증가에 따라 박막의 표면저항은 감소하였다.

• Asian-Australasian Journal of Animal Sciences
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• 제33권6호
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• pp.992-1001
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• 2020

Objective: This study was conducted to investigate the effects of hot-melt extruded ZnO nano-particles (HME-ZnO) as an alternative for P-ZnO on growth performance, nutrient digestibility, Zn bioavailability, intestinal microbiota, and intestinal morphology of weanling pigs. Methods: A total of 450 piglets (Landrace×Yorkshire×Duroc) were randomly allotted to five treatments based on initial body weight and sex. The experimental diets were fed in a meal form as phase 1 from d 0 to 14 and phase 2 from d 15 to 28. Treatments were the control diet without ZnO supplementation, the diet containing 2,500 ppm Zn as ZnO, and three diets containing 500, 1,000, or 2,500 ppm Zn as HME-ZnO. Results: The overall result showed a higher (p<0.01) average daily gain in weanling pigs fed ZnO-supplemented diets in comparison to the control diet. There was a decrease (p<0.01) in fecal score in the ZnO-supplemented diets. Dietary supplementation of ZnO improved (p<0.05) crude protein digestibility. The weanling pigs fed the P-ZnO diet had a lower (p<0.01) Zn digestibility in the feces than HME-ZnO supplemented treatments. Weanling pigs fed diets supplemented with ZnO had greater (p<0.05) Lactobacillus spp. populations and lower Clostridium spp. (p<0.05) and Coliforms (p<0.01) populations in the ileum. Weanling pigs fed diets supplemented with increasing concentrations of HME-ZnO linearly decreased Clostridium spp. (p<0.05) and Coliforms (p<0.01) in the ileum. Lower (p<0.05) Clostridium spp. and Coliforms counts in the colon were observed in pigs fed with ZnO-supplemented diets. Weanling pigs fed diets supplemented with ZnO showed a greater (p<0.01) villus height in the duodenum. Conclusion: Dietary supplementation of HME-ZnO and P-ZnO showed a potential to improve the digestibility of protein, intestinal Coliform and Clostridium, villus height in duodenum and ileum. Moreover, HME-ZnO showed a higher Zn digestibility compared with P-ZnO.

• 한국재료학회지
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• 제23권5호
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• pp.255-259
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• 2013

An effect of thermal annealing on activating phosphorus (P) atoms in ZnO nanorods (NR) grown using a hydrothermal process was investigated. $NH_4H_2PO_4$ used as a dopant source reacted with $Zn^{2+}$ ions and $Zn_3(PO_4)_2$ sediment was produced in the solution. The fact that most of the input P elements are concentrated in the $Zn_3(PO_4)_2$ sediment was confirmed using an energy dispersive spectrometer (EDS). After the hydrothermal process, ZnO NRs were synthesized and their PL peaks were exhibited at 405 and 500 nm because P atoms diffused to the ZnO crystal from the $Zn_3(PO_4)_2$ particles. The solubility of the $Zn_3(PO_4)_2$ initially formed sediment varied with the concentration of $NH_4OH$. Before annealing, both the structural and the optical properties of the P-doped ZnO NR were changed by the variation of P doping concentration, which affected the ZnO lattice parameters. At low doping concentration of phosphorus in ZnO crystal, it was determined that a phosphorus atom substituted for a Zn site and interacted with two $V_{Zn}$, resulting in a $P_{Zn}-2V_{Zn}$ complex, which is responsible for p-type conduction. After annealing, a shift of the PL peak was found to have occurred due to the unstable P doping state at high concentration of P, whereas at low concentration there was little shift of PL peak due to the stable P doping state.

• 한국전기전자재료학회논문지
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• 제31권7호
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• pp.443-449
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• 2018

We investigated the temperature-dependent photoluminescence spectroscopy of colloidal InZnP/ZnSe/ZnS (core/shell/shell) quantum dots with varying ZnSe and ZnS shell thickness in the 278~363 K temperature range. Temperature-dependent photoluminescence of the InZnP-based quantum dot samples reveal red-shifting of the photoluminescence peaks, thermal quenching of photoluminescence, and broadening of bandwidth with increasing temperature. The degree of band-gap shifting and line broadening as a function of temperature is affected little by shell composition and thickness. However, the thermal quenching of the photoluminescence is strongly dependent on the shell components. The irreversible photoluminescence quenching behavior is dominant for thin-shell-deposited InZnP quantum dots, whereas thick-shelled InZnP quantum dots exhibit superior thermal stability of the photoluminescence intensity.

• Bulletin of the Korean Chemical Society
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• 제32권12호
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• pp.4247-4252
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• 2011

The porphyrin-incorporated arylether dendrimers ZnP-D1 and ZnP-D4 were investigated to discover the influence of dendritic environments for the axial ligation of pyridine and photoinduced electron transfer by methyl viologen. Absorption and fluorescence spectra of ZnP, ZnP-D1, and ZnP-D4 were measured in dichloromethane with the addition of pyridine or methyl viologen dichloride. Axial ligation of pyridine was confirmed by red-shifted absorption spectrum. The complex formation constants $K_f$ (Table 1) for axial coordination of pyridine on ZnP, ZnP-D1, and ZnP-D4 were estimated to be $4.4{\times}10^3\;M^{-1}$, $3.3{\times}10^3\;M^{-1}$, and $1.7{\times}10^3\;M^{-1}$, respectively. The photoinduced electron transfer to methyl viologen dichloride was confirmed by fluorescence quenching. Stern-Volmer constants Ksv for ZnP, ZnP-D1, and ZnP-D4 were calculated to be $2.6{\times}10^3$, $2.5{\times}10^3$, and $2.1{\times}10^3$, respectively. ZnP-D4 surrounded by 4 aryl ether dendrons shows the smallest $K_f$ and Ksv values, with comparison to ZnP and ZnP-D1.

• 한국전기전자재료학회논문지
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• 제34권6호
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• pp.454-460
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• 2021

In this work, we synthesized alloy-core InZnP quantum dots, which are more efficient than single-core InP quantum dots, using a solution process method. The effect of synthesis conditions of alloy core on optical properties was investigated. We also investigated the conditions that make up the gradient shell to minimize defects caused by lattice mismatch between the InZnP core and ZnS is 7.7%. The stable synthesis temperature of the InZnP alloy core was 200℃. Quantum dots consisting of three layered ZnSe gradient shell and single layered ZnS exhibited the best optical property. The properties of quantum dots synthesized in 100 ml and in 2,000 ml flasks were almost equal.