• Journal of Ceramic Processing Research
• /
• v.20 no.1
• /
• pp.80-83
• /
• 2019

The Mn4+-activated Li2ZnSn2O6 (LZSO:Mn4+) red phosphors were synthesized by the solid-state reaction at temperatures of 1100-1400 ℃ in air. The synthesized LZSO:Mn4+ phosphors were confirmed to have a single hexagonal LZSO phase without the presence of any secondary phase formed by the Mn4+ addition. With near UV and blue excitation, the LZSO:Mn4+ phosphors exhibited a double band deep-red emission peaked at ~658 nm and ~673 nm due to the 2E → 4A2 transition of Mn4+ ion. PL emission intensity showed a strong dependence on the Mn4+ doping concentration and the 0.3 mol% Mn4+-doped LZSO phosphor produced the strongest PL emission intensity. Photoluminescence emission intensity was also found to be dependent on the calcination temperature and the optimal calcination temperature for the LZSO:Mn4+ phosphors was determined to be 1200 ℃. Dynamic light scattering (DLS) and field-effect scanning electron microscopy (FE-SEM) analysis revealed that the 0.3 mol% Mn4+-doped LZSO phosphor particles have an irregularly round shape and an average particle size of ~1.46 ㎛.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.368-368
• /
• 2007

Zinc oxide (ZnO) has drawn much interest as a potential transparent conducting oxide (TCO) for applying to solar cell and front electrode of electro-luminescent devices. For the enhancement of electrical property of TCOs, dopant introduction and hybridization with conductive nanoparticles have been investigated. In this work, ZnO films were formed on glass substrate by using photochemical solution deposition of Ag nanoparticles dispersed or various metal (Ag, Cd, In, or Sn) contained photosensitive ZnO solutions. The usage of photosensitive solution permits us to obtain a micron-sized direct patterning of ZnO film without using conventional dry etching procedure. The structural, optical, and electrical characteristics of ZnO films with the introduction of metal dopants with/without Ag nanoparticles have been investigated to check whether there is a combined effect between metal dopants and Ag nanoparticles on the characteristics of ZnO film. The phase formation and crystallinity of ZnO film were monitored with X-ray diffractometer. The optical transmittance measurement was carried out using UV-VIS-NIR spectrometer and the electrical properties such as sheet resistance and conductivity were observed by using four-point probe.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.29 no.1
• /
• pp.1-5
• /
• 2016

The ultimate aims of display market is transparent or flexible. Researches have been carried out for various applications. It has been possible to reduced the process steps and get good electrical properties for semiconductors with large optical bandgaps. Oxide semiconductors have been established as one of the leading and promising technology for next generation display panels. In this paper, alternative treatment processes have been tried for oxide semiconductors of thin film transistors to increase the electrical properties of the thin film transistors and to investigate the mechanisms. There exist a various oxide semiconductors. Here, we focused on InGaZnO, ZnO and InSnZnO which are commercialized or researched actively.

• Journal of Sensor Science and Technology
• /
• v.6 no.6
• /
• pp.476-482
• /
• 1997

A portable electronic nose system has been fabricated and characterized using an oxide semiconductor gas sensor array and pattern recognition techniques such as principal component analysis and back-propagation artificial neural network. The sensor array consists of six thick-film gas sensors whose sensing layers are Pd-doped $WO_{3}$, Pt-doped $SnO_{2}$, $TiO_{2}-Sb_{2}O_{5}-Pd$-doped $SnO_{2}$, $TiO_{2}-Sb_{2}O_{5}-Pd$-doped $SnO_{2}$ + Pd coated layer, $Al_{2}O_{3}$-doped ZnO and $PdCl_{2}$-doped $SnO_{2}$. The portable electronic nose system consists of an 16bit Intel 80c196kc as CPU, an EPROM for storing system main program, an EEPROM for containing optimized connection weights of artificial neural network, an LCD for displaying gas concentrations. As an application the system has been used to identify 26 carbon monoxide/hydrocarbon (CO/HC) car exhausting gases in the concentration range of CO 0%/HC 0 ppm to CO 7.6%/HC 400 ppm and the identification has been successfully demonstrated.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.336-336
• /
• 2013

Zinc oxide (ZnO) based transparent oxide semiconductors have been studied due to their high transmittance and electrical conductivity. Pure ZnO have unstable optical and electrical properties at high temperatures but doped ZnO thin films can have stable optical and electrical properties. In this paper, transparent oxide semiconductors of Y-doped ZnO thin films prepared by sol-gel method. The ionic radius of $Y^{3+}$ (0.90 A) is close to that of $Zn^{2+}$ (0.74 A), which makes Y suitable dopant for ZnO thin films. The Sn-doped ZnO thin films were deposited onto quartz substrates with different atomic percentages of dopant which were Y/Zn = 0, 1, 2, 3, 4, and 5 at.%. These thin films were pre-heated at $150^{\circ}C$ for 10 min and then annealed at $500^{\circ}C$ or 1 h. The structural and optical properties of the Y-doped ZnO thin films were investigated using field-emission scanning electronmicroscopy (FE-SEM), X-ray diffraction (XRD), UV-visible spectroscopy, and photoluminescence (PL).

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.318-321
• /
• 2009

We have studied transparent top gate Al-Zn-Sn-O (AZTO) TFTs with an $Al_2O_3$ protective layer (PL) on an active layer. We also fabricated a transparent 2.5 inch QCIF+AMOLED display panel using the AZTO TFT back-plane. The AZTO active layers were deposited by RF magnetron sputtering at room temperature and the PL was deposited by ALD with two different processes. The mobility and subthreshold slope were superior in the cases of the vacuum annealing and the oxygen plasma PL compared to the $O_2$ annealing and the water vapor PL, however, the bias stability was excellent for the TFTs of the $O_2$ annealing and the water vapor PL.

• Journal of the Korean Society for Marine Environment & Energy
• /
• v.12 no.4
• /
• pp.302-306
• /
• 2009

9 kinds of nanoparticle used for this study was a particle with the size of less than 100 nm of diameter, and Artemia sp. cyst examined what kind of influence to have upon the process hatched out in nauplius. 82% hatched in nauplius at the opposition ward where a nanoparticle wasn't added after 24 time course. AGZ020, Nano silver, P-25, Sb and SnO nanoparticle showed hatching rate of 18%, 20%, 13%, 50% and 0% respectively by the 20mg/L density, and it became clear that a harmful effect is big, but I had a harmful effect compared with the opposition ward by 75%, 60%, 73% and 73% respectively by Ag-$TiO_2$, In, Sn and Zn nanoparticle, but a feeble thing was known relatively compared with AGZ020, Nano silver, P-25, Sb and SnO nanoparticle. The difference has caused this with the ingredient a nanoparticle has. Ag is included 2 % and AGZ020, Nano silver and P-25 nanoparticle are used widely as anti-fungus agent, and the SnO nanoparticle which became combination is a light catalyst pill, and oxygen is used for a Sn particle. This and others, a possibility that use is generalized and flows into aquatic environment in sequence the home electronics, functionality cosmetics, anti-fungus agent and a light catalyst pill at present becomes high for nanoparticles and others. The anxiety which has an influence on the ecology world in the water with this can be generated, so I'd have to study the potential danger a nanoparticle has continuously.

• Proceedings of KOSOMES biannual meeting
• /
• 2008.05a
• /
• pp.137-141
• /
• 2008

9 kinds of nanoparticle used for this study was a particle with the size of less than 100 nm of diameter, and Artemia sp. cyst examined what kind a influence to have upon the process hatched out in nauplius. 82% hatched in nauplius at the opposition ward where a nanoparticle wasn't added after 24 time course. AGZ020, Nano silver, P-25, Sb and SnO nanoparticle showed hatching rate of 18%, 20%, 13%, 50% and 0% respectively by the 20mg/L density, and it became clear that a harmful effect is big, but I had a harmful effect compared with the opposition ward by 75%, 60%, 73% and 73% respectively by Ag-$TiO_2$, In, Sn and Zn nanoparticle, but a feeble thing was known relatively compared with AGZ020, Nano silver, P-25, Sb and SnO nanoparticle. The difference was mused this with the ingredient a nanoparticle has. Ag is included 2% and AGZ020, Nano silver and P-25 nanoparticle are used widely as anti-fungus agent, and the SnO nanoparticle which became combination is a light catalyst pill, and oxygen is used for a Sn particle. This and others, a possibility that use is generalized and flows into aquatic environment in sequence the home electronics, functionality cosmetics, anti-fungus agent and a light catalyst pill at present becomes high for nanoparticles and others. The anxiety which has an influence on the ecology world in the water with this can be generated, so I'd have to study the potential danger a nanoparticle has continuously.

• Proceedings of the KIEE Conference
• /
• 1991.11a
• /
• pp.245-248
• /
• 1991

Recently, oxide semiconductor gas sensors consisted of n-type semiconductor materials such as $SnO_2$, ZnO and $Fe_2O_3$ have been widely used to detect reducing gases. In this paper, we made the thick-film ZnO gas sensors with $PdCl_2$ as a catalyst and investigated the sensitivity to CO gas. In the thick-film Zno sensor, the highest sensitivity was shown in the sensor with 1wt.% of $PdCl_2$ which was sintered for 1 hour at $700^{\circ}C$ and operated at $300^{\circ}C$.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.8 no.1
• /
• pp.21-26
• /
• 2008

We fabricated nano-particles of ZnO, $In_2O_3$ and $SnO_2$ by using the chemical reaction between metal thin films and polyamic acid. The average size and density of these ZnO, $In_2O_3$ and $SnO_2$ nano-particles was approximately 10, 7, and 15 nm, and $2{\times}10^{11},\;6{\times}10^{11},\;2.4{\times}10^{11}cm^{-2}$, respectively. Then, we fabricated nano-floating gate memory (NFGM) devices with ZnO and $In_2O_3$ nano-particles embedded in the devices' polyimide dielectrics and silicon dioxide layers as control and tunnel oxides, respectively. We measured the current-voltage characteristics, endurance properties and retention times of the memory devices using a semiconductor parameter analyzer. In the $In_2O_3$ NFGM, the threshold voltage shift (${\Delta}V_T$) was approximately 5 V at the initial state of programming and erasing operations. However, the memory window rapidly decreased after 1000 s from 5 to 1.5 V. The ${\Delta}V_T$ of the NFGM containing ZnO was approximately 2 V at the initial state, but the memory window decreased after 1000 s from 2 to 0.4 V. These results mean that metal-oxide nano-particles have feasibility to apply NFGM devices.