• Applied Science and Convergence Technology
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• v.27 no.5
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• pp.95-99
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• 2018

We discuss the structural and optical characteristics of GaN nanowires (NWs) grown on Si(111) substrates by a plasma-assisted molecular-beam epitaxy. The GaN NWs with high crystal quality were formed by adopting a new growth approach, so called Ga pre-deposition (GaPD) method. In the GaPD, only Ga was supplied without nitrogen flux on a SiN/Si surface, resulting in the formation of Ga droplets. The Ga droplets were used as initial nucleation sites for the growth of GaN NWs. The GaN NWs with the average heights of 60.10 to 214.62 nm obtained by increasing growth time. The hexagonal-shaped top surfaces and facets were observed from the field-emission electron microscope images of GaN NWs, indicating that the NWs have the wurtzite (WZ) crystal structure. Strong peaks of GaN (0002) corresponding to WZ structures were also observed from double crystal x-ray diffraction rocking curves of the NW samples. At room temperature, free-exciton emissions were observed from GaN NWs with narrow linewidth broadenings, indicating to the formation of high-quality NWs.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.174-174
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• 2010

Gallium Nitride(GaN) attracts great attention due to their wide band gap energy (3.4eV), high thermal stability to the solid state lighting devices like LED, Laser diode, UV photo detector, spintronic devices, solar cells, sensors etc. Recently, researchers are interested in synthesis of polycrystalline and amorphous GaN which has also attracted towards optoelectronic device applications significantly. One of the alternatives to deposit GaN at low temperature is to use Single Source Molecular Percursor (SSP) which provides preformed Ga-N bonding. Moreover, our group succeeds in hybridization of SSP synthesized GaN with Single wall carbon nanotube which could be applicable in field emitting devices, hybrid LEDs and sensors. In this work, the GaN thin films were deposited on c-axis oriented sapphire substrate by MBE (Molecular Beam Epitaxy) using novel single source precursor of dimethyl gallium azido-tert-butylamine($Me_2Ga(N_3)NH_2C(CH_3)_3$) with additional source of ammonia. The surface morphology, structural and optical properties of GaN thin films were analyzed for the deposition in the temperature range of $600^{\circ}C$ to $750^{\circ}C$. Electrical properties of deposited thin films were carried out by four point probe technique and home made Hall effect measurement. The effect of ammonia on the crystallinity, microstructure and optical properties of as-deposited thin films are discussed briefly. The crystalline quality of GaN thin film was improved with substrate temperature as indicated by XRD rocking curve measurement. Photoluminescence measurement shows broad emission around 350nm-650nm which could be related to impurities or defects.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.4
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• pp.534-540
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• 1990

In this paper the characteristics of submicron gate GaAs MESFET's have been studied using a particle model which takes into account the hot-electron transport phenomena, i.e., the velocity overshoot. \ulcornervalley(<000> direction), L valley (<111>direction), X valley (<100>direction) as the GaAs conduction energy band and optical phonon, acoustic phonon, equivalent intervalley, nonequivalent intervalley scattering as the scattering models, have been considered in this simulation. And the GaAs material and the device simulation have been done by determination of the free flight time, scattering mechanism and scattering angle according to Monte-Carlo algorithm which makes use of a particle model. As a result of the particle simulation, firstly the electron distribution, the potential energy distribution and the situation of electron displacement in 0.6 \ulcorner gate length device have been obtained. Secondly, the cutoff frequency, obtained by this method, is k47GHz which is in good agreement with the calculated result of theory. And the current-voltage characteristics curve which takes account of the buffer layer effect has been obtained. Lastly it has been verified that parasitic current at the buffer layer can be analyzed using channel depth modulation.

• Journal of Powder Materials
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• v.21 no.5
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• pp.338-342
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• 2014

In the present work, we investigated the mechanical alloying of binary Ga-Se(1:1) and Ga-Te(1;1) sysyems. The high-energy ball-milling was performed at $40^{\circ}C$ where one of constituents (Ga) is molten state. The purpose of the work was to see whether reactions between constituent elements are accelerated by the presence of a liquid phase. During the ball-milling, the liquid Ga phase completely disappeared and the resulting powders consist of nanocrystalline grain of ~20 nm with partly amorphized phases. However, no intermetallic compounds formed in spite of the presence of the liquid phases which has much higher diffusivity than solid constituents. By subsequent heat-treatments, the intermetallic compounds such as GaSe and GaTe formed at relatively low temperatures. The formation temperature of theses compound was much lower than those predicted by equilibrium phase diagram. The comparison of the ball-milled powders with un-milled ones indicated that the easy formation of intermetallic compound or allying occurs at low temperatures.

• Journal of the Korean Chemical Society
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• v.40 no.3
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• pp.167-172
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• 1996

For the preparation of single-crystalline GaN film, heteroepitaxial growth on a sapphire substrate was carried out by halide vapor phase epitaxy(HVPE) method. The resulting GaN films showed n-type conductivity. The insulator type GaN film was made by doping with Zn(acceptor dopant), which showed emission peaks around 2.64 and 2.43 eV. The result of this study indicates that GaN can be obtained in an epitaxial structure of MIS(metal-insulator-semiconductor) junction. The observed data are regarded as fundamental in developing GaN epitaxial films for light emitting devices of hetero-structure type.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.348-354
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• 1998

To investigate an influence of the thermal preheating for the substrates exerted on the heteroepilayers, the ZnTe epilayers are grown on the GaAs (100) at the substrate temperature of 450~$630^{\circ}C$ by hot wall epitaxy (HWE). For this purpose, double crystal rocking curve (DCRC) and photoluminescence (PL) are measured. The full width at half maximum of DCRC are the smallest in the ZnTe epilayers grown on the GaAs thermally etched at around both $510^{\circ}C$ and $590^{\circ}C$. However, at around $550^{\circ}C$ they increase due to the reconstruction of the atoms in the surface. And they increase due to the oxide layer at below $490^{\circ}C$ and due to the surface defects at above $610^{\circ}C$. From PL analysis, the full width at half maximum of the light hole exciton $X_{1s,th}$ and of the second-order Raman line increase at around $550^{\circ}C$. With the increasing preheating temperature, the intensities of Y-bands and of the oxygen bound exciton (OBE) peak related to an oxide layer on the GaAs surface generally decrease. From these experimental results, it's confirmed that the GaAs substrate thermally etched influences the ZnTe pilayers.

• Journal of Life Science
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• v.7 no.4
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• pp.342-346
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• 1997

This experiment was carried out to clarify the effects of gibberellin(GA) aplication and bagging on repeening and quality in 'Delaware' grape berries. Treatments are 4 plots(2X2 factorial experiment); GA, GA+bagging, bagging and control. The clusters were dipped twice in 100 ppm GA with GA treatment : 10 days before and after the full bloom. The results obtained as follows: 1. GA treatment made the seedless grape berry reduced in the fresh weight but it hastened the ripening period about 2 weeks. 2. Total soluble solid(TSS), viscosity and pH value of berry juice increased with maturation. The concentration of TSS and viscosity were higher in GA treatment plot than GA non-treatment. 3. Berry-hardness, titratable acidity and alcohol inslouble solid(AIS) decreased with maturation. Expically berry-hardness and AIS decreased more greatly in GA non-treatment than GA treatment. 4. The concentration of anthocyanin increased with ripening but pectic substance didn't fluctuate nearly. These of anthocyanin and pectin were higher in GA non-treatment plot than GA treatment. 5. By analysis of factorial experiment GA treatment was highly significant with the $^{o}$Brix/Acidity ratio, juice viscosity and AIS, but high negatively, significant with berry-hardness and berry fresh weight. And it was significant with T S S and negatively, titratable acidity. Bagging was significant with $^{o}$Brix/Acidity ratio and AIS content, but negatively, titratable acidity. 6. Qualitative characters were high correlated with the $^{o}$Brix/Acidity ratio in simple correlation but direct effect by the path-coefficient analysis didn't coincide with simple correlation. The direct effect of pH was large and juice viscosity, the next. And that of berry-hardness was negligible but, AIS, small negatively.

• Journal of Plant Biology
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• v.22 no.4
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• pp.95-100
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• 1979

As a part of the studies on the regulatory mechanism of gene expression by $GA_{3}$ , the effects of $GA_{3}$ on the protein biosynthesis and phosphorylation in maize seedlings were investigated. 1. The optimum concentration of $GA_{3}$ for the stimulation of the protein biosynthesis was 0.3mM. 2. The protein biosynthesis was remarkably increase by $GA_{3}$ during the germination. The reason for the decrease in the protein biosynthesis by 48hrs. after germination seems to be a staggered gene expression, and/or increases in protease and RNase activities. 3. The ratio of the amount of the newly synthesized protein in germinating seeds treated with $GA_{3}$ to the amount of proteins secreted into the endosperm was similar to that ratio in control. According to this result, it seems that $GA_{3}$ stimulates only the expression of certain definite genes. 4. By the treatment with $GA_{3}$, the rates of biosynthesis and phosphorylation of proteins were increased up to about 1.5 times during germination and 6 times by 72hrs. after germination, respectively. The ratio of the total soluble proteins to the phosphorpoteins considerably increased in the early germination stage (24hrs.) but decreased after 24hrs. According to the above mentioned results, the stimulation of the phosphorylation of proteins of $GA_{3}$ seems to be attributed to the increases in the activities of protein kinases.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.1
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• pp.10-14
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• 2008

We synthesized GaN nanowires with high quality using the vapor phase epitaxy technique. The GaN nanowires were obtained at a temperature of $950^{\circ}C$. The Ar and $NH_3$ flow rates were 1000 sccm and 50 sccm, respectively. The shape of the GaN nanowires was confirmed through FESEM analysis. We were able to conclude that the GaN nanowires synthesized via vapor-solid (VLS) mechanism when the source was closed to the substrate. On the other side, the VS mechanism changed to vapor-liquid-solid (VLS) as the source and the substrate became more distant. Therefore, we can suggest that the large amount of Ga source from initial growth interrupt the role of catalyst on the substrate.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.308-309
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• 2012

One of the critical issues in the growth of multijunction solar cell is the formation of a highly doped Esaki interband tunnel diode which interconnects unit cells of different energy band gap. Small electrical and optical losses are the requirements of such tunnel diodes [1]. To satisfy these requirements, tens of nanometer thick gallium arsenide (GaAs) can be a proper candidate due to its high carrier concentration in low energy band gap. To obtain highly doped GaAs in molecular beam epitaxy, the temperatures of Si Knudsen cell (K-cell) for n-type GaAs and Be K-cell for p-type GaAs were controlled during GaAs epitaxial growth, and the growth rate is set to 1.75 A/s. As a result, the doping concentration of p-type and n-type GaAs increased up to $4.7{\times}10^{19}cm^{-3}$ and $6.2{\times}10^{18}cm^{-3}$, respectively. However, the obtained n-type doping concentration is not sufficient to form a properly operating tunnel diode which requires a doping concentration close to $1.0{\times}10^{19}cm^{-3}$ [2]. To enhance the n-type doping concentration, n-doped GaAs samples were grown with a lower growth rate ranging from 0.318 to 1.123 A/s at a Si K-cell temperature of $1,180^{\circ}C$. As shown in Fig. 1, the n-type doping concentration was increased to $7.7{\times}10^{18}cm^{-3}$ when the growth rate was decreased to 0.318 A/s. The p-type doping concentration also increased to $4.1{\times}10^{19}cm^{-3}$ with the decrease of growth rate to 0.318 A/s. Additionally, bulk resistance was also decreased in both the grown samples. However, a transmission line measurement performed on the n-type GaAs sample grown at the rate of 0.318 A/s showed an increased specific contact resistance of $6.62{\times}10^{-4}{\Omega}{\cdot}cm^{-2}$. This high value of contact resistance is not suitable for forming contacts and interfaces. The increased resistance is attributed to the excessively incorporated dopant during low growth rate. Further studies need to be carried out to evaluate the effect of excess dopants on the operation of tunnel diode.