• Journal of Information Display
• /
• v.12 no.4
• /
• pp.213-217
• /
• 2011

Printing technologies were applied to fabricate a flexible organic thin-film transistor (OTFT) backplane for electrophoretic displays (EPDs). Various printing processes were adopted to maximize the figures of each layer of OTFT: screen printing combined with reverse offset printing for the gate electrodes and scan bus lines with Ag ink, inkjet for the source/drain electrodes with glycerol-doped Poly (3,4-ethylenedioxythiophene): Poly (styrenesulfonate) (PEDOT:PSS), inkjet for the semiconductor layer with Triisopropylsilylethynyl (TIPS)-pentacene, and screen printing for the pixel electrodes with Ag paste. A mobility of $0.44cm^2/V$ s was obtained, with an average standard deviation of 20%, from the 36 OTFTs taken from different backplane locations, which indicates high uniformity. An EPD laminated on an OTFT backplane with $190{\times}152$ pixels on an 8-in panel was successfully operated by displaying some patterns.

• Journal of Radiation Protection and Research
• /
• v.26 no.3
• /
• pp.167-175
• /
• 2001

Semiconductor diode detectors coated with neutron reactive material are presently under investigation for various uses, such as remote sensing of thermal neutrons, fast neutron counting, and thermal neutron radiography. Theory indicates that single-coated devices can yield thermal neutron efficiencies from 4% to 11 %, which is supported by experimental evidence. Radiation endurance measurements indicate that the devices function well up to a limiting thermal neutron fluence of $10^{13}/cm^2$, beyond which noticeable degradation occurs. Thermal neutron contrast images of step wedges and simple phantoms, taken with dual in-line pixel devices, show promise for thermal neutron imaging detectors.

• Microbiology and Biotechnology Letters
• /
• v.50 no.3
• /
• pp.375-386
• /
• 2022

In the present study, four distinctly colored bacterial isolates that show intense pigmentation upon brief ultraviolet (UV) light exposure are chosen. The strains are identified as Micrococcus luteus (Milky yellow), Cryseobacterium pallidum (Yellow), Cryseobacterium spp. (Golden yellow), and Kocuria turfanensis (Pink) based on their morphological and 16S rDNA analysis. Moderate salinity (1.25%), 25-37℃ temperature, and pH of 7.2 are found to be the most favorable conditions of growth and pigment production for all the selected isolates. The pigments are extracted using methanol: chloroform (1:1) and the purity of the pigments are confirmed by high-performance liquid chromatography (HPLC) and thin-layer chromatography (TLC). Further, Fourier transform infrared (FTIR) and UV-Visible spectroscopy indicate their resemblance with carotenoids and flexirubin family. The antioxidant activities of the pigments are estimated, and, all the pigments have shown significant antioxidant efficacy in 2,2'-azino-bis(3-ethylbenzothiazoline-6-sulfonic acid) (ABTS), 2,2-diphenyl-1-picryl-hydrazyl (DPPH), and ferric reducing antioxidant power (FRAP) assays. The UV protective property of the pigments is determined by cling-film assay, wherein, at least 25% of UV sensitive Escherichia coli survive with bio-pigments even after 90 seconds of UV exposure compared to control. The pigments also hold a good sun protective factor (SPF) value (1.5-4.9) which is calculated with the Mansur equation. Based on these results, it can be predicted that these bacterial pigments can be further developed into a promising antioxidant and UV-protectant for several biomedical applications.

• Journal of Sensor Science and Technology
• /
• v.29 no.6
• /
• pp.388-393
• /
• 2020

In this study, a PbS quantum dots (QDs)-based H₂ gas sensor with a Pd electrode was proposed. QDs have a size of several nanometers, and they can exhibit a high surface area when forming a thin film. In particular, the NH₂ present in the ligand of PbS QDs and H₂ gas are combined to form NH₃⁺, subsequently the electrical characteristics of the QDs change. In addition to the resistance change owing to the reaction between Pd and H₂ gas, the resistance change owing to the reaction between the NH₂ of PbS QDs and H₂ gas increases the current signal at the sensor output, which can produce a high output signal for the same concentration of H₂ gas. Using the XRD and absorbance properties, the synthesis and particle size of the synthesized PbS QDs were analyzed. Using PbS QDs, the sensitivity was significantly improved by 44%. In addition, the proposed H₂ gas sensor has high selectivity because it has low reactivity with heterogeneous gases such as C₂H₂, CO₂, and CH₄.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.1
• /
• pp.54-58
• /
• 2017

The effect of low temperature ($250^{\circ}C$) heat treatment after electron irradiation (irradiation time = 30, 180, 300s) on the chemical bonding and electrical properties of ZnO thin films prepared using a sol-gel process were examined. XPS (X-ray photoelectron spectroscopy) analysis showed that the electron beam irradiation decreased the concentration of M-O bonding and increased the OH bonding. As a result of the electron beam irradiation, the carrier concentration of ZnO films increased. The on/off ratio was maintained at ${\sim}10^5$ and the $V_{TH}$ values shifted negatively from 11 to 1 V. As the irradiation time increased from 0 to 300s, the calculated S. S. (subthreshold swing) of ZnO TFTs increased from 1.03 to 3.69 V/decade. These values are superior when compared the sample heat-treated at $400^{\circ}C$ representing on/off ratio of ${\sim}10^2$ and S. S. value of 10.40 V/decade.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2003.07a
• /
• pp.1038-1041
• /
• 2003

In the paper, we investigated silicon surface microstructures formed by reactive ion etching in hollow cathode system. Wet anisotropic chemical etching technique use to form random pyramidal structure on <100> silicon wafers usually is not effective in texturing of low-cost multicrystalline silicon wafers because of random orientation nature, but High density hollow cathode plasma system illustrates high deposition rate, better film crystal structure, improved etching characteristics. The etched silicon surface is covered by columnar microstructures with diameters form 50 to 100nm and depth of about 500nm. We used $SF_{6}$ and $O_{2}$ gases in HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}$ $cm^{-3}$ at a discharge current of 20 mA. Silicon etch rate of 1.3 ${\mu}s/min$. was achieved with $SF_{6}/O_{2}$ plasma conditions of total gas pressure=50 mTorr, gas flow rate=40 sccm, and rf power=200 W. Our experimental results can be used in various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this paper we directed our study to the silicon etching properties such as high etching rate, large area uniformity, low power with the high density plasma.

• Journal of Information Display
• /
• v.13 no.3
• /
• pp.113-118
• /
• 2012

Metal oxide semiconductors were considered promising materials as backplanes of future displays. Moreover, the adoption of carrier-suppressing metal into indium-zinc oxide (IZO) has become one of the most important themes in the metal oxide research field. In this paper, efforts to realize and optimize IZO with diverse types of carrier suppressors are summarized. Properties such as the band gap of metal in the oxidized form and its electronegativity were examined to confirm their relationship with the metal's carrier-suppressing ability. It was concluded that those two properties could be used as indicators of the carrier-suppressing ability of a material. As predicted by the properties, the alkali earth metals and early transition metals used in the research effectively suppressed the carrier and optimized the electrical properties of the metal oxide semiconductors. With the carrier-suppressing metals, IZO-based thin-film transistors with high (above $1cm^2/V{\cdot}s$) mobility, a lower than 0.6V/dec sub-threshold gate swing, and an over $3{\times}10^6$ on-to-off current ratio could be achieved.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.18 no.5
• /
• pp.217-224
• /
• 2008

A stoichiometric mixture of evaporating materials for $ZnIn_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $ZnIn_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $ZnIn_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $9.41\times10^{16}cm^{-3}$ and $292cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $ZnIn_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.8622eV-(5.23\times10^{-4}eV/K)T^2/(T+775.5K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $ZnIn_2Se_4$ have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $ZnIn_2Se_4/GaAs$ epilayer. The three photo current peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-exciton$ for n = 1 and $C_{27}-exciton$ peaks for n = 27.

• 전자공학회논문지 IE
• /
• v.43 no.1
• /
• pp.1-4
• /
• 2006

The characteristics of polymeric thin-film transistors(TFTs) can be controlled by chemically modifying the surface of the gate dielectric prior to the organic semiconductor. The chemical treatment consists of derivative the tantalum pentoxide($Ta_2O_5$) surface with organic materials to form self-assembled monolayer(SAM). The deposition of an octadecyl-trichlorosilane(OTS), hexamethy-ldisilazone(HMDS), aminopropyltreithoxysilane(ATS) SAM leads to a mobility of $0.01\sim0.06cm2/V{\cdot}s$ in a poly-3-hexylthiophene(P3HT) conjugated polymer. The mobility enhancement mechanism is likely to involve molecular interactions between the polymer and SAM. These result can be used for polymer TFT's dielectric material.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.14-15
• /
• 2010

Recently there has been growing interest in topological insulators or the quantum spin Hall (QSH) phase, which are insulating materials with bulk band gaps but have metallic edge states that are formed topologically and robust against any non-magnetic impurity [1]. In a three-dimensional material, the two-dimensional surface states correspond to the edge states (topological metal) and their intriguing nature in terms of electronic and spin structures have been experimentally observed in bulk Bi1-xSbx single crystals [2,3,4]. However, if we want to know the transport properties of these topological metals, high purity samples as well as very low temperature will be needed because of the contribution from bulk states or impurity effects. In a recent report, it was also shown that an intriguing coupling between the surface and bulk states will occur [5]. A simple solution to this bothersome problem is to prepare a topological metal on an ultrathin film, in which the surface-to-bulk ratio is drastically increased. Therefore in the present study, we have investigated if there is a method to make an ultrathin Bi1-xSbx film on a semiconductor substrate. From reflection high-energy electron diffraction observation, it was found that single crystal Bi1-xSbx films (0${\sim}30\;{\AA}A$ can be prepared on Si(111)-$7{\times}7$. The transport properties of such films were characterized by in situ monolithic micro four-point probes [6]. The temperature dependence of the resistivity for the x=0.1 samples was insulating when the film thickness was $240\;{\AA}A$. However, it became metallic as the thickness was reduced down to $30\;{\AA}A$, indicating surface-state dominant electrical conduction. Figure 1 shows the Fermi surface of $40\;{\AA}A$ thick Bi0.92Sb0.08 (a) and Bi0.84Sb0.16 (b) films mapped by angle-resolved photoemission spectroscopy. The basic features of the electronic structure of these surface states were shown to be the same as those found on bulk surfaces, meaning that topological metals can be prepared at the surface of an ultrathin film. The details will be given in the presentation.