• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.437-440
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• 1998

We studied phosphorus doping effect on the epitaxial growth of $Si_{1-x}Ge_{x}$ film with high Ge fraction on Si substates at 550.deg. C by LPCVD. In a low $Ph_{3}$ partial pressure region such as below 1.25 mPa, the phosphorus dopant concentration increased linearly with increasing $PH_{3}$ partial pressure while the deposition rate and the Ge fraction were constant. In a higher $PH_{3}$ partial pressure region, the phosphorus dopant concentration and the deposition rate decreased, while the Ge fraction slightly increased. The deposition arate and the Ge fraction increased with increasing $GeH_{4}$ partial pressure while the phophours dopant concentration decreased. But the increasing rate of Ge fraction with incrasing $PH_{3}$ partial pressure was reduced at a high $GeH_{4}$ partial pressure. According to test results, it suggests that high surface coverage of phosphorus atoms suppress both the $SiH_{4}$ adsorption/reasction and the $GeH_{4}$ adsorption/reaction on the surfaces, and the effect is more stronger on $SiH_{4}$ than on $GeH_{4}$. In a higher $PH_{3}$ partial pressure region, the epitaxial growth is largely controlled by surface coverage effect of phosphorus atoms. The phosphorus surface coverage was slimited at a high $GeH_{4}$ partial pressure because adsorbed Ge atoms effectively suppresses the adsorption of phosphorus atoms.

• Progress in Superconductivity
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• v.14 no.1
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• pp.34-38
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• 2012

The effect of graphene inclusion in the ex-situ $MgB_2$ was analyzed with the help of resistivity behavior and critical current density studies. Amount of graphene was systematically varied from 0% for pristine sample to 3% by the weight of $MgB_2$. Graphene that is considered as a good source of carbon was found to be intact without any significant carbon doping in $MgB_2$ structure as reveled by XRD measurements. There was no signature of graphene inclusion as far as the superconducting transition is concerned which remained same at 39 K for all the samples. The transition width being sensitive to defect doping remained more or less about 2 K for all the samples showing no variation due to doping. Although there was no change in the superconducting transition or transition width, the graphene doped sample showed noticeable decrease in the overall resistivity behavior with respect to decrease in temperature. The graphene inclusion acted as effective pinning centers which have enhanced the upper critical field of these samples.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1301-1307
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• 2004

Reduced pressure chemical vapor deposition(RPCYD) technology has been investigated for the growth of SiGe epitaxial films with two dimensional in-situ doped boron impurities. The two dimensional $\delta$-doped impurities can supply high mobility carriers into the channel of SiGe heterostructure MOSFETs(HMOS). Process parameters including substrate temperature, flow rate of dopant gas, and structure of epitaxial layers presented significant influence on the shape of two dimensional dopant distribution. Weak bonds of germanium hydrides could promote high incorporation efficiency of boron atoms on film surface. Meanwhile the negligible diffusion coefficient in SiGe prohibits the dispersion of boron atoms: that is, very sharp, well defined two-dimensional doping could be obtained within a few atomic layers. Peak concentration and full-width-at-half-maximum of boron profiles in SiGe could be achieved in the range of 10$^{18}$ -10$^{20}$ cm$^{-3}$ and below 5 nm, respectively. These experimental results suggest that the present method is particularly suitable for HMOS devices requiring a high-precision channel for superior performance in terms of operation speed and noise levels to the present conventional CMOS technology.

• Progress in Superconductivity
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• v.11 no.2
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• pp.87-91
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• 2010

We fabricated the polyacrylic acid (PAA)-doped $MgB_2$ bulks and characterized their lattice parameters, actual C substitutions, microstructures, and critical properties. The boron (B) powder was mixed with PAA using N,N-dimethylformamide as solvent and then the solution was dried out at $200^{\circ}C$ and crushed. The C treated B powder and magnesium powder were mixed and compacted by uniaxial pressing at 500 MPa, followed by sintering at $900^{\circ}C$ for 1 h in high purity Ar atmosphere. We observed that the PAA doping increased the MgO amount but decreased the grain size, a-axis lattice constant, and critical temperature ($T_c$), which is indicative of the C substitution for B sites in $MgB_2$. In addition, the critical current density ($J_c$) at high magnetic field was significantly improved with increasing PAA addition: at 5 K and 6.6 T, the $J_c$ of 7 wt% PAA-doped sample was $6.39\;{\times}\;10^3\;A/cm^2$ which was approximately 6-fold higher than that of the pure sample ($1.04\;{\times}\;10^3\;A/cm^2$). This improvement was probably due to the C substitution and the refinement of grain size by PAA doping, suggesting that PAA is an effective dopant in improving $J_c$(B) performance of $MgB_2$.

• Journal of Magnetics
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• v.16 no.1
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• pp.15-18
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• 2011

We have studied the $TiO_2$ doping effects on the flux pinning behavior of an $MgB_2$ superconductor synthesized by the in-situ solid-state reaction. From the field-cooled and zero-field-cooled temperature dependences of magnetization, the reversible-irreversible transition of $TiO_2$-doped $MgB_2$ was determined in the H-T diagram (the temperature dependence of upper critical magnetic field and irreversibility line). For comparison, the similar measurements are also obtained from SiC-doped $MgB_2$. The critical current density was estimated from the width of hysteresis loops in the framework of Bean's model at different temperatures. The obtained results manifest that nano-scale $TiO_2$ inclusions served as effective pinning centers and lead to the enhanced upper critical field and critical current density. It was concluded that the grain boundary pinning mechanism was realized in a $TiO_2$-doped $MgB_2$ superconductor.

• Transactions on Electrical and Electronic Materials
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• v.8 no.2
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• pp.73-78
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• 2007

The crystallization temperature in GeTe solid electrolyte films was improved by in situ-nitrogen doping by rf magnetron co-sputtering technique at room temperature. The crystallization temperature of $250\;^{\circ}C$ in electrolyte films without nitrogen doping increased by approximately $300\;^{\circ}C$, $350\;^{\circ}C$, and above $400\;^{\circ}C$ in films deposited with nitrogen/argon flow ratios of 10, 20, and 30 %, respectively. A PMC memory device with $Ge_{45}Te_{55}$ solid electrolytes deposited with nitrogen/argon flow ratios of 20 % shows reproducible memory switching characteristics based on resistive switching at threshold voltage of 1.2 V with high $R_{off}/R_{on}$ ratios. Nitrogen doping into the silver saturated GeTe electrolyte films improves the crystallization temperature of electrolyte films and does not appear to have a negative impact on the switching characteristics of PMC memory devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.233.1-233.1
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• 2016

화학적 방법에 의한 NTE graphite의 박리 또는 전도도 개선을 위한 도핑공정을 수행할 경우, 결함 및 불순물 생성에 의해 재결정화 공정 및 순도 개선을 위한 별도의 공정을 필요로한다. 본 연구에서는 건식 방법으로써 10,000K 이상의 초고온 RF 열플라즈마를 이용하여 in-situ 방법으로 흑연의 박리, 결함 제거, 결정성 향상 및 도핑 공정을 수행하고, 도핑특성을 평가하였다. 질소 도핑을 위하여 암모니아 가스를 첨가하여 NTE graphite를 도핑 처리하였으며, 시뮬레이션을 통하여 반응기 내부의 온도분포를 파악하고, 도핑을 위한 암모니아가스가 분해되어 도핑공정이 수행될 수 있는 투입위치를 결정하였다. 질소 도핑율은 암모니아 가스의 주입위치에서의 온도 및 가스 주입 유량 등의 공정조건에 따라 변화됨을 확인하였고, XPS 분석결과 최대 14.87 atomic%의 도핑율의 결과를 얻었다.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.100-105
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• 1998

This paper describes the preparation of Pt-and $TiO_2$-doped $Nb_2O_5$ thin film by Ion-Beam-Enhanced Deposition. Platinum and titanium doping, and Nb2O5 deposition were carried out in situ. The dependence of oxygen sensing properties on the amounts of Pt and Ti dopant in the $Nb_2O_5$ film was investigated. There were the highist sensitivity, the lowest temperature coefficient and the shortest responce time at doping of 5 mol% $TiO_2$ and 0.3 mol%Pt

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.15-16
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• 2008

We have grown N-doped ZnO thin films on sapphire substrate by employing dielectric barrier discharge in pulsed laser deposition (DBD-PLD). DBD guarantees an effective way for massive in-situ generation of N-plasma under the conventional PLD process condition. Low-temperature photoluminescence spectra of the N-doped ZnO film provided near band-edge emission after thermal annealing process. The emission peak was resolved by Gaussian fitting and showed a dominant acceptor-bound exciton peak ($A^0X$) that indicated the successful p-type doping of ZnO with N.

• Journal of the Korean institute of surface engineering
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• v.34 no.3
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• pp.258-263
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• 2001

Siloxane thin films were fabricated on a silicon wafer by spin-coating using a siloxane solution made by the sol-gel process. Fluorine was doped using$ CF_4$ plasma treatment. The film was then annealed in-situ state in the nitrogen atmosphere. In order to examine the influence of annealing and fluorine doping on the siloxane thin film, thermogravimetric-differential thermal analysis (TG-DTA), Fourier transform-infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS) were used and the dielectric constant was determined by the high-frequency capacitance-voltage method. Stable siloxane films could be obtained by in-situ annealing in a nitrogen atmosphere after $CF_4$ plasma treatment, and the dielectric value of the film was $\varepsilon$ 2.5.