• Bulletin of the Korean Chemical Society
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• 제34권4호
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• pp.1221-1224
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• 2013

The atomic layer deposition (ALD) of $ZrO_2$ was conducted in ultrahigh vacuum (UHV) conditions. The surface was exposed to $ZrCl_4$ and $H_2O$ in sequence and the surface species produced after each step were identified in situ with X-ray photoelectron spectroscopy (XPS). $ZrCl_4$ is molecularly adsorbed at 140 K on the $SiO_2$/Si(111) surface covered with OH groups. When the surface is heated to 300 K, $ZrCl_4$ loses two Cl atoms to produce $ZrCl_2$ species. Remaining Cl atoms of $ZrCl_2$ species can be completely removed by exposing the surface to $H_2O$ at 300 K followed by heating to 600 K. The layer-by-layer deposition of $ZrO_2$ was successfully accomplished by repeated cycles of $ZrCl_4$ dosing and $H_2O$ treatment.

• 한국전기전자재료학회논문지
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• 제15권7호
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• pp.576-582
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• 2002

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectrics were fabricated, and nitrogen distribution and bonding species which contribute to memory characteristics were analyzed. Also, memory characteristics of devices depending on the anneal temperatures were investigated. The devices were fabricated by retrograde twin well CMOS processes with $0.35\mu m$ design rule. The processes could be simple by in-situ process in growing dielectric. The nitrogen distribution and bonding states of gate dielectrics were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). As the nitridation temperature increased, nitrogen concentration increased linearly, and more time was required to form the same reoxidized layer thickness. ToF-SIMS results showed that SiON species were detected at the initial oxide interface which had formed after NO annealing and $Si_2NO$ species within the reoxidized layer formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. It could be said that nitrogen concentration near initial interface is limited to a certain quantity, so the excess nitrogen is redistributed within reoxidized layer and contribute to electron trap generation.

• 한국광물학회지
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• 제18권2호
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• pp.127-134
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• 2005

금속제련공학 및 환경과학 분야에 있어서 물질전체를 구성하고 있는 화학적 조성이 중요한 요소이나, 입자 표면의 화학조성과 미분화된 입자들의 표면 반응성을 제어함과 동시에, 입자 계면에서 일어나는 중금속과 유기물질등의 반응은 제련공정과 환경오염에 중요한 역할을 한다. 그러므로, 수용액상에 존재하는 여러 종류의 화학 물질과 광물입자 표면 사이에서 일어나는 계면반응 과정의 이해는 상당히 중요한 것이다. 일반적으로 입자 표면 분석에는 ex-situ 법을 사용하는 X-ray photo-electron spectroscopy (XPS) 분석 방법이 많이 적용되고 있으나, 이는 분석대상시료의 크기가 보통 100 마이크론에서 1 cm 정도의 범위 안에 혼재-혼합되어있는 고체 입자들을 분석하기 때문에 채취 분석된 X-ray의 원래 발산한 입자표면을 분석할 수는 없다. 그래서 본 연구에서는 Time-of-Flight Secondary-Ion Mass Spectroscopy (TOF-SIMS)를 응용하여 황화광물의 부유선광 공정 중 생성된 미세한 유화광물입자$(30\~75\;microns)$ 표면에 형성된 무기, 유기물의 반응 관찰을 통해 이들의 정성분석 및 상대적 정량분석법을 연구하고자 하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.329-329
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• 2011

We investigated the thin films of poly(3-hexylthiophene) (P3HT) and C61-butyric acid methylester (PCBM) prepared by ultrahigh vacuum (UHV) electrospray depositioin (ESD) by using in-situ XPS, UPS and ambient-pressure AFM. The morphology, chemical structures, and interface properties of these materials, most widely used for bulk heterojunction organic solar cells, were studied depending on the ESD solution compositions and concentrations. We found that the solution conductivity and flow rate as well as applied voltage are the important parameters for stable electrospray and film formation. These results suggest that UHV ESD is a viable method for the deposition of multilayers of polymers under UHV condition. We also discuss the energy level alignment for the various deposition conditions at the interface, which is one of the most important operating parameters of the bulk heterojunction organic solar cells.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.17-20
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• 2001

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectric were fabricated, and nitrogen distribution and bonding species which contributing memory characteristics were analyzed. Also, memory characteristics of devices according to anneal temperatures were investigated. The devices were fabricated by 0.35$\mu\textrm{m}$ retrograde twin well CMOS processes. The processes could be simple by in-situ process of nitridation anneal and reoxidation. The nitrogen distribution and bonding state of gate dielectric were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary ton Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). Nitrogen concentrations are proportional to nitridation anneal temperatures and the more time was required to form the same reoxidized layer thickness. ToF-SIMS results show that SiON species are detected at the initial oxide interface and Si$_2$NO species near the new Si-SiO$_2$ interface that formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. These could be said that nitrogen concentration near initial interface is limited to a certain quantity, so excess nitrogen are redistributed near the Si-SiO$_2$ interface and contributed to electron trap generation.

• Advances in nano research
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• 제13권6호
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• pp.527-543
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• 2022

A novel, green, versatile and magnetically retrievable BiFeO₃/CDR (Bismuth ferrite/coriander) nanocomposites were fabricated via simple wet chemical method utilizing in situ functionalized, cheap coriander seed powder (CDR 5%, 10%, 15% and 20 wt%) as a fuel to enhance the efficiency of pristine BiFeO₃. A comparative study was performed between BiFeO₃/CDR and BiFeO₃/CNT (Bismuth ferrite/carbon nanotubes) nanocomposites for the removal of various hazardous pollutants from waste water. The successful synthesis of the fabricated nanomaterials was monitored via FT-IR, Powder XRD, FE-SEM, CV, VSM, CHNS/O and XPS studies. The synthesized nanomaterials were employed for the oxidative degradation of Carbol fuchsin, Reactive black 5, Ciprofloxacin and Doxorubicin; adsorption of a pesticide malathion; and reduction studies for Para-nitrophenol (PNP). The fabricated nanomaterials (BiFeO₃/CDR) showcased excellent efficiency and comparable results with (BiFeO₃/CNT) for the removal of model pollutants. Moreover, synthesized green heterojunction was also testified for mixture of textile and pharmaceutical waste. Hence CDR can be utilized as a better alternative of CNTs.

• 한국진공학회지
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• 제19권1호
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• pp.14-21
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• 2010

Ge은 Si에 비하여 높은 이동도를 갖기 때문에 차세대 고속 metal oxide semiconductor field effect transistors (MOSFETs) 소자를 위한 channel 물질로서 각광받고 있다. 그러나 화학적으로 안정한 게이트 산화막의 부재는 MOS 소자에 Ge channel의 사용에 주요한 장애가 되어왔다. 특히, Ge 기판 위에 고품질의 계면 특성을 갖는 게이트 절연막의 제조는 필수 요구사항이다. 본 연구에서, $HfO_xN_y$ 박막은 Ge 기판 위에 플라즈마 원자층 증착법(plasma-enhanced atomic layer deposition, PEALD)을 이용하여 증착되었다. 플라즈마 원자층 증착공정 동안에 질소는 질소, 산소 혼합 플라즈마를 이용한 in situ 질화법에 의하여 첨가되었다. 산소 플라즈마에 대한 질소 플라즈마의 첨가로 성분비를 조절함으로써 전기적 특성과 계면 성질을 향상시키는데 초점을 맞추어서 연구를 진행하였다. 질소 산소의 비가 1：1이었을 때, EOT의 값의 10% 감소를 갖는 고품질의 소자특성을 보여주었다. X-ray photoemission spectroscopy (XPS)와 high resolution transmission electron microscopy (HR-TEM)를 사용하여 박막의 화학적 결합 구조와 미세구조를 분석하였다.

• Tribology and Lubricants
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• 제11권2호
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• pp.34-43
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• 1995

The boundary films formed in sliding on steel surfaces were characterized using various lubricants. The mechanism of boundary film formation and loss was investigated over a range of temperature. The thickness of the boundary films was monitored in-situ by an ellipsometer, and the composition of the films was analyzed by XPS. The performance of the lubricants is closely associated with boundary film forming ability. In order to achieve high load carrying capacity, a boundary film must be formed on the surface. Sliding is necessary to form the films and some time is also required. As temperature increases, chemical reactivity increases the film formation rate, while the film removal rate increases due to thg decrease of durability of the boundary film material. There is a balance between these two competing mechanisms and this balance is reflected in the boundary film thickness.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.343-343
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• 2011

ZnO has been introduced as one of the good candidates for next generation opto-electronics. Recently, ZnO is known to be suitable for the transparent electrode in organic solar cells and light emitting devices. The contact with n-type organic material has been studied due to the n-type properties of ZnO. However, the surface of ZnO has shown different electronic property with respect to its surface orientation. Therefore, it is presumed that there are differences in the interfacial electronic structures between organic materials and ZnO with different orientation. Therefore, it is required to classify the interfacial electronic structures according to the surface orientation of ZnO. In this study, we measured the interfacial electronic structures between the ZnO substrate having various orientations and a typical n-type organic material, tris-(8-hydroxyquinoline) aluminum (Alq3). In-situ x-ray and ultraviolet photoelectron spectroscopy measurements revealed the interfacial electronic structures. We found the changes in the electronic structures with respect to the orientation of ZnO substrate and it could be used to improve the contact between ZnO and Alq3.

• 한국광물학회:학술대회논문집
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• 한국광물학회.한국암석학회 2005년도 공동학술발표회 논문집
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• pp.50-57
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• 2005

Although the bulk composition of materials is one of the major considerations in extractive metallurgy and environmental science, surface composition and topography (edges and dislocations are preferred sites for physicochemical reactions) control surface reactivity, and consequently play a major role in determining metallurgical phenomena and pollution by heavy metals and organics. An understanding of interaction mechanisms of different chemical species with the mineral surface in an aqueous media is very important in natural environment and metallurgical processing. X-ray photoelectron spectroscopy (XPS) has been used as an ex-situ analytical technique, but the material to be analyzed can be any size from $100{\mu}m$ up to about 1 cm. It can also measure mixed solids powders, but it is impossible to ascertain the original source of resulting x-ray signals where they were emitted from, since it radiates and scans the macro sample surface area.