• 제목/요약/키워드: In-situ SiN

검색결과 105건 처리시간 0.026초

M/NEMS용 in-situ 도핑된 다결정 3C-SiC 박막 성장 (Epitaxial growth of in-situ doped polycrystalline 3C-SiC for M/NEMS application)

  • 김강산;정귀상
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
    • /
    • pp.18-19
    • /
    • 2008
  • Polycrystalline(poly) 3C-SiC film is a promising structural material for M/NEMS used in harsh environments, bio and fields. In order to realize poly 3C-SiC based M/NEMS devices, the electrical properties of poly 3C-SiC film have to be optimized. The n-type poly 3C-SiC thin film is deposited by APCVD using HMDS$(Si_2(CH_3)_6)$ as single precursor and are in-situ doped using N2. Resistivity values as low as 0.014 $\Omega$cm were achieved. The carrier concentration increased with doping from $3.0819\times10^{17}$ to $2.2994\times10^{19}cm^{-3}$ and electronicmobility increased from 2.433 to 29.299 $cm^2/V{\cdot}s$.

  • PDF

In-situ SiN 박막을 이용하여 성장한 GaN 박막 및 LED 소자 특성 연구 (A Study of Properties of GaN and LED Grown using In-situ SiN Mask)

  • 김덕규;유인성;박춘배
    • 한국전기전자재료학회논문지
    • /
    • 제18권10호
    • /
    • pp.945-949
    • /
    • 2005
  • We have grown GaN layers with in-situ SiN mask by metal organic chemical vapor deposition (MOCVD) and study the physical properties of the GaN layer. We have also fabricate PN junction light emitting diode (LED) to investigate the effect of the SiN mask on its optical property By inserting a SiN mask, (102) the full width at half maximum (FWHM) decreased from 480 arcsec to 409 arcsec and threading dislocation (TD) density decreased from $3.21{\times}10^9\;cm^{-2}$ to $9.7{\times}10^8\;cm^{-2}$. The output power of the LED with a SiN mask increased from 198 mcd to 392 mcd at 20 mA. We have thus shown that the SiN mask improved significantly the physical and optical properties of the GaN layer.

CVD로 in-situ 도핑된 다결정 3C-SiC 박막의 전기적 특성 (Electrical characteristics of in-situ doped polycrystalline 3C-SiC thin films grown by CVD)

  • 김강산;정귀상
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
    • /
    • pp.199-200
    • /
    • 2009
  • This paper describes the electrical properties of polycrystalline (poly) 3C-SiC thin films with different nitrogen doping concentrations. The in-situ-doped poly 3C-SiC thin films were deposited by using atmospheric-pressure chemical vapor deposition (APCVD) at $1200^{\circ}C$ with hexamethyldisilane (HMDS: $Si_2$ $(CH_3)_6)$ as a single precursor and 0 ~ 100 sccm of $N_2$ as the dopant source gas. The peaks of the SiC (111) and the Si-C bonding were observed for the poly 3C-SiC thin films grown on $SiO_2/Si$ substrates by using X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FT-IR) analyses, respectively. The resistivity of the poly 3C-SiC thin films decreased from $8.35\;{\Omega}{\cdot}cm$ for $N_2$ of 0 sccm to $0.014\;{\Omega}{\cdot}cm$ with $N_2$ of 100 sccm. The carrier concentration of the poly 3C-SiC films increased with doping from $3.0819\;{\times}\;10^{17}$ to $2.2994\;{\times}\;10^{19}\;cm^{-3}$, and their electronic mobilities increased from 2.433 to $29.299\;cm^2/V{\cdot}S$.

  • PDF

폴리머 Precursor를 이용한 in-situ 나노 복합체의 제조 : I. 질화규소 표면에서의 $SiO_2$ 피막형성에 따른 폴리머의 흡착거동 (Fabrication of in-situ Formed Namo-Composite Using Polymer Precursor : I. Adsorption Behavior of Polymer Followed $SiO_2$ Surface formation onto Silicon Nitride Surface)

  • 정연길;백운규
    • 한국세라믹학회지
    • /
    • 제37권3호
    • /
    • pp.280-287
    • /
    • 2000
  • Adsorption behavior and amount of phenolic resin followed silica (SiO2) formation onto silicon nitride(Si3N4) surface were investigated using electrokinetic sonic amplitude (ESA) technique and with UV spectrometer, to fabricate Si3N4/SiC nano-composite based on reaction between SiO2 formed and phenolic resin absorbed onto Si3N4 particle. The amount of SiO2 formed and carbon from phenolic resin absorbed onto Si3N4 surface were calculated quantitatively to adjust the reaction between SiO2 and phenolic resin, resulting in no residual SiO2 and carbon. As a result, pre-heated tempeature for optimized reaction was below 25$0^{\circ}C$, in which there was no residual SiO2 and carbon.

  • PDF

원자막증착법(ALD) SnO2 촉매를 적용한 AlGaN/GaN 이종접합 트랜지스터 NO2 가스센서 (NO2 gas sensor using an AlGaN/GaN Heterostructure FET with SnO2 catalyst deposited by ALD technique)

  • 양수혁;김형탁
    • 전기전자학회논문지
    • /
    • 제24권4호
    • /
    • pp.1117-1121
    • /
    • 2020
  • 본 연구에서는, 원자막증착법(ALD) 공정으로 증착된 SnO2 촉매를 AlGaN/GaN 이종접합 FET에 적용하여 NO2 가스 검출이 가능한 것을 확인하였다. AlGaN/GaN-on-si 플랫폼에서 제작 된 HFET 센서로 NO2 100 ppm에 대하여 In-situ SiN이 있는 소자와 없는 소자가 각각 100 ℃, 200 ℃에서 10.1% 및 17.7%, 5.5% 및 38%의 감지성능을 확인하였다.

증착시 도핑된 비정질 Si 게이트를 갖는 MOS 캐패시터와 트랜지스터의 전기적 특성 (Electrical Properties of MOS Capacitors and Transistors with in-situ doped Amorphous Si Gate)

  • 이상돈;이현창;김재성;김봉렬
    • 전자공학회논문지A
    • /
    • 제31A권6호
    • /
    • pp.107-116
    • /
    • 1994
  • In this paper, The electrical properties of MOS capacitors and transistoras with gate of in-situ doped amorphous Si and poly Si doped by POCI$_3$. Under constant current F-N stress, MOS capacitors with in-situ doped amorphous Si gate have shown the best resistance to degradation in reliabilty properties such as increase of leakage current, shift of gate voltage (V$_{g}$). shift of flat band voltage (V$_{fb}$) and charge to breakdown(Q$_{bd}$). Also, MOSFETs with in-situ doped amorphous Si gate have shown to have less degradation in transistor properties such as threshold voltage, transconductance and drain current. These improvements observed in MOS devices with in-situ doped amorphous Si gate is attributed to less local thinning spots at the gate/SiO$_2$ interface, caused by the large grain size and the smoothness of the surface at the gate/SiO$_2$ interface.

  • PDF

Effect of Additive Composition on Fracture Toughness of In Situ-Toughened SiC−Si3N4 Composites

  • Lee, Young-Il;Kim, Young-Wook
    • 한국세라믹학회지
    • /
    • 제44권4호
    • /
    • pp.189-193
    • /
    • 2007
  • Effect of additive composition on fracture toughness of in situ-toughened $SiC-Si_3N_4$ composites was investigated for five different additive compositions. The highest toughness $(6.4MPa{\cdot}m^{1/2})\;in\;SiC-Si_3N_4$ composites investigated herein was obtained when an Y-Mg-Si-Al-O-N oxynitride glass was used as a sintering additive. The improvement in fracture toughness was produced by enhanced bridging and deflection by $Si_3N_4$ grains.

$\textrm{Si}_{3}\textrm{N}_{4}$-AIN 복합세라믹스의 In-Situ합성 (In-Situ Synthesis of $\textrm{Si}_{3}\textrm{N}_{4}$-AIN Ceramic Composites)

  • 이병택;김해두;허석환;이찬규
    • 한국재료학회지
    • /
    • 제8권1호
    • /
    • pp.27-32
    • /
    • 1998
  • In-Sit반응소결에의해 Si과 AI금속분말을 이용하여 Si$_{3}$N$_{4}$-AIN 복합세라믹스를 합성하였다. 합성된 Si$_{3}$N$_{4}$-AIN복합세라믹스의 미세조직과 결정구조를 해석하기 위해, OM, TEM, XRD및 EDX를 이용하였으며, Si$_{3}$N$_{4}$-AIN -20wt.%AIN복합세라믹스에서 Si의 질화율은 97%로 가장 높았다. Si$_{3}$N$_{4}$-AIN 복합세라믹스에서 Si의 질화율은 AI첨가량 증가에 따라 감소하였다. 대부분의 AI입자들은 다결정 AI입자들은 다결정 AIN(4-H구조)로 완전질화되었으며, 따라서 잔류 AI상은 반응소결체내에서 관찰되지 않았다. Si$_{3}$N$_{4}$의 결정구조는 $\alpha$$\beta$구조가 혼재된 상태이며, 잔류 Si입자내에서는 미소균열 및 전위가 관찰되었다. AI/Si$_{3}$N$_{4}$와 Si$_{3}$N$_{4}$ 두계면에서 이들은 거친 형상을 보이지만, 계면반응상은 관찰되지 않았다.

  • PDF

Mobility Enhancement in Polycrystalline Silicon Thin Film Transistors due to the Dehydrogenation Mechanism

  • Lee, Seok Ryoul;Sung, Sang-Yun;Lee, Kyong Taik;Cho, Seong Gook;Lee, Ho Seong
    • Journal of the Korean Physical Society
    • /
    • 제73권9호
    • /
    • pp.1329-1333
    • /
    • 2018
  • We investigated the mechanism of mobility enhancement after the dehydrogenation process in polycrystalline silicon (poly-Si) thin films. The dehydrogenation process was performed by using an in-situ CVD chamber in a $N_2$ ambient or an ex-situ furnace in air ambient. We observed that the dehydrogenated poly-Si in a $N_2$ ambient had a lower oxygen concentration than the dehydrogenated poly-Si annealed in an air ambient. The in-situ dehydrogenation increased the (111) preferred orientation of poly-Si and reduced the oxygen concentration in poly-Si thin films, leading to a reduction of the trap density near the valence band. This phenomenon gave rise to an increase of the field-effect mobility of the poly-Si thin film transistor.

In-situ SiN 패시베이션 층에 따른 AlGaN/GaN HEMTs의 전기적 및 저주파 잡음 특성 (Electrics and Noise Performances of AlGaN/GaN HEMTs with/without In-situ SiN Cap Layer)

  • 최여진;백승문;이유나;안성진
    • 접착 및 계면
    • /
    • 제24권2호
    • /
    • pp.60-63
    • /
    • 2023
  • AlGaN/GaN 이종접합 구조는 이차원 전자 가스층(2-DEG)으로 인해 높은 전자이동도를 갖고 있으며, 넓은 밴드갭을 갖기 때문에 고온에서 높은 항복전압을 갖는 특성을 가지고 있어, 고전력, 고주파 전자 소자로 주목받고 있다. 이러한 이점을 갖고 있음에도 불구하고, 전류 붕괴 등의 다양한 소자 신뢰성에 영향을 주는 인자들이 있기 때문에 이를 해결하고자, 본 논문에서는 금속-유기-화학기상증착법을 이용하여 AlGaN/GaN 이종 접합구조와 SiN 패시베이션 층을 연속 증착시켰다. 이를 통해 HEMTs소자에 SiN패시베이션이 미치는 재료 특성 및 전기적 특성을 분석했으며, 결과를 바탕으로 저주파 잡음 특성을 측정해 소자의 전도 메커니즘 모델과 채널 내의 결함의 원인에 대해서 분석하였다.