• Progress in Superconductivity and Cryogenics
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• v.5 no.3
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• pp.15-19
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• 2003

For the purpose of standardization of the critical current measurement, it is meaningful to describe how $I_{c}$ will behave as the stress/strain level changes. In this study, strain dependencies of the critical current $I_{c}$ in Ag-alloy sheathed multifilamentary Bi(2212) and Bi(2223) superconducting tapes were evaluated at 77K, 0T. The external reinforcement was accomplished by soldering AgMgNi alloy tapes onto single or both sides of the sample. With the external reinforcement to the Bi(2212) tape, the strength of the tapes increased but the critical current at the strain free state, $I_{c0}$ decreased in some cases. The strain for onset of the $I_{c}$ degradation, $\varepsilon$$_{\irr}$, increased with an increase of the reinforcing volume and then saturated to a certain value. The effect of external reinforcement on the degradation of $I_{c}$ due to the bending strain in the Bi(2223) tape was also examined. Contrary to the expectation, it showed a significant $I_{c}$ degradation even at a small strain of 0.4 %. The observations of damage morphologies gave a good explanation to the $I_{c}$ behavior.c/ behavior.r.

• ETRI Journal
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• v.38 no.6
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• pp.1163-1171
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• 2016

Integration technologies involving flexible substrates are receiving significant attention owing the appearance of new products regarding wearable and Internet of Things technologies. There has been a continuous demand from the industry for a reliable bonding method applicable to a low-temperature process and flexible substrates. Up to now, however, an anisotropic conductive film (ACF) has been predominantly used in applications involving flexible substrates; we therefore suggest low-temperature lead-free soldering and bonding processes as a possible alternative for flex-on-flex applications. Test vehicles were designed on polyimide flexible substrates (FPCBs) to measure the contact resistances. Solder bumping was carried out using a solder-on-pad process with Solder Bump Maker based on Sn58Bi for low-temperature applications. In addition, thermocompression bonding of FPCBs was successfully demonstrated within the temperature of $150^{\circ}C$ using a newly developed fluxing underfill material with fluxing and curing capabilities at low temperature. The same FPCBs were bonded using commercially available ACFs in order to compare the joint properties with those of a joint formed using solder and an underfill. Both of the interconnections formed with Sn58Bi and ACF were examined through a contact resistance measurement, an $85^{\circ}C$ and 85% reliability test, and an SEM cross-sectional analysis.

• Progress in Superconductivity
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• v.10 no.1
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• pp.45-49
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• 2008

For the development of superconducting fault current limiters (SFCLs), fault current limiting elements were fabricated out of Bi-2212 bulk tubes and tested. The SFCL elements consisted of tube shaped Bi-2212 bulks and metal shunts for the stabilizers. Firstly, the Bi-2212 bulk tubes were processed based on a design of monofilar coils in order to acquire large resistance and high voltage rating. 300 mm-long Bi-2212 tubes were designed to have the current path of 410 cm in length with 24 turns and 41 mm in diameter. The processed monofilar coil, as designed, had 300 A $I_c$ at 77 K. The fabricated superconducting monofilar coils were affixed to Cu-Ni alloy as that of stabilizers. The Cu-Ni alloys were processed to have the same shape of the superconducting monofilar coils. The Cu-Ni coil had resistivity of 32 ${\mu}{\Omega}$-cm at 77 K and 37 ${\mu}{\Omega}$-cm at 300 K. The metal shunts were attached to the outside of the Bi-2212 monofilar coil by a soldering technique. After the terminals made of copper were attached to both ends of the superconductor-metal shunt composite, the gap between the turns and the surface of the elements was filled with an epoxy and a dense mesh made of FRP in order to enhance the mechanical strength. The completed SFCL elements went through fault tests, and we confirmed that the voltage rating of 143 $V_{rms}$ (E =0.35 $V_{rms}$/cm) could be accomplished.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.04a
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• pp.81-86
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• 2000

To evaluate the possibility of the partial melting soldering. wettability of partial melted solders was measured using wetting balance. Off eutectic Sn-Pb allows are wettable in their partial melting zone. Especially, Pb rich alloys showed excellent wettability while wettability of Sn rich alloys were adequate or poor. It is found that wettability increases over $200^{\circ}C$ regardless of composition liquid fraction and phases of the original alloy Sn-7Ag alloy showed good wettability in their partial melting zone, while Sn-65Bi alloy was non-wettable under their melting points.

• Journal of Welding and Joining
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• v.18 no.6
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• pp.74-82
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• 2000

The fluxless wetting properties of UBM-coated Si-wafer to the binary lead-free solders(Sn-Ag, Sn-Sb, Sjn-In, Sn0Bi) were estimated by wetting balance method. With the new wettability indices from the wetting curves of one side coated specimen, the wetting property estimation of UBM-coated Si-wafer was possible. For UBM of Si-chip, Au/Cu/Cr UBm was better than au/Ni/TI in the point of wetting time/ At general reflow process temperature, the wettability of high melting point solders(Sn-Sb, Sn-Ag) was better than that of low melting point one(Sn-Bi, Sn-In). The contact angle of the one side coated Si-plate to the solder could be calculated from the force balance equation by measuring the static state force and the tilt angle.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.450-455
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• 2002

Cu-cored Sn-Ag solder balls were fabricated by coating pure Sn and Ag on Cu balls. The melting behavior and the solderability of the BGA joint with the Ni/Au coated Cu pad were investigated and were compared with those of the commercial Sn-Ag and Sn-Ag-Cu balls. DSC analyses clarified the melting of Cu-cored solders to start at a rather low temperature, the eutectic temperature of Sn-Ag-Cu. It was ascribed to the diffusion of Cu and Ag into Sn plating during the heating process. After reflow soldering the microstructures of the solder and of the interfacial layer between the solder and the Cu pad were analyzed with SEM and EPMA. By EDX analysis, formation of a eutectic microstructure composing of $\beta$-Sn, Ag$_3$Sn, ad Cu$_{6}$Sn$_{5}$ phases was confirmed in the solder, and the η'-(Au, Co, Cu, Ni)$_{6}$Sn$_{5}$ reaction layer was found to form at the interface between the solder and the Cu pad. By conducting shear tests, it was found that the BGA joint using Cu-cored solder ball could prevent the degradation of joint strength during aging at 423K because of the slower growth me of η'-(Au, Co, Cu, Ni)$_{6}$Sn$_{5}$ reaction layer formed at the solder, pad interface. Furthermore, Cu-cored multi-component Sn-Ag-Bi balls were fabricated by sequentially coating the binary Sn-Ag and Sn-Bi solders on Cu balls. The reflow property of these solder balls was investigated. Melting of these solder balls was clarified to start at the almost same temperature as that of Sn-2Ag-0.75Cu-3Bi solder. A microstructure composing of (Sn), Ag$_3$Sn, Bi and Cu$_{6}$Sn$_{5}$ phases was found to form in the solder ball, and a reaction layer containing primarily η'-(Au, Co, Cu, Ni)$_{6}$Sn$_{5}$ was found at the interface with Ni/Au coated Cu pad after reflow soldering. By conducting shear test, it was found that the BGA joints using this Cu-core solder balls hardly degraded their joint shear strength during aging at 423K due to the slower growth rate of the η'-(Au, Cu, Ni)$_{6}$Sn$_{5}$ reaction layer at the solder/pad interface.he solder/pad interface.

• Progress in Superconductivity and Cryogenics
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• v.7 no.2
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• pp.11-15
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• 2005

The I$_{c}$ degradation behavior of Bi-2223 tapes bent at RT and 77K were investigated using the bending device invented by Goldacker. Test results on fixing the tape at RT and 17K showed no difference. At 17K and RT bending, the critical strain was 0.67 and 0.50$\%$, respectively, for the VAM-l tape. For the AMSC tape, it was 0.94 and 0.88$\%$, respectively. These results show that there is additional residual stress in the superconducting filaments to be bent at 17K which shifts the formation of cracks into smaller bending radii. This was proved by computational analysis based on the mixture rule of composites. For the VAM-l tape, the Ie degradation behavior using the Goldacker type device shifted to higher strain levels at about 0.5$\%$, as compared with the FRP sample holders which have a critical bending strain of about 0.24$\%$. Also, for the externally reinforced AMSC tape, Ie degradation using the Goldacker type device begins at a higher strain level, at 0.88$\%$ as compared with using FRP sample holders, at 0.74$\%$. The difference between both cases can be explained by the tensile' and thermal stresses that the tapes were subjected to during fixing (soldering) when the FRP sample holders were used.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1292-1298
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• 2003

In this paper, dc reactor lot the inductive high-Tc superconducting fault current limiter (SFCL) was optimally designed by finite element method(FEM). The Prototype high-Tc do reactor was manufactured and compared to the results of design. This dc reactor consists of 4∼stacked double pancake coils which are wounded with Bi-2223 wire coated with SUS315L. Kapton tape is used for the insulation of turn to turn and layer to layer. Each pancake is connected in series by soldering Finally, optimal design and manufacture method lot the dc reactor is suggested in this paper. Through the comparison of result of optimal design and experimental result of prototype high-Tc superconducting dc reactor, reliance on the design of the high-Tc dc reactor tot the 1.2 kV/80 A SFCL is proved.

• Journal of the Korean Solar Energy Society
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• v.38 no.1
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• pp.45-55
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• 2018

Environmentally benign lead-free solder coated ribbon (e. g. SnCu, SnZn, SnBi${\cdots}$) has been intensively studied to interconnect cells without lead mixed ribbon (e. g. SnPb) in the crystalline silicon(c-Si) photovoltaic modules. However, high melting point (> $200^{\circ}C$) of non-lead based solder provokes increased thermo-mechanical stress during its soldering process, which causes early degradation of PV module with it. Hence, we proposed low-temperature conductive paste (CP) based tabbing method for lead-free ribbon. Modules, interconnected by the lead-free solder (SnCu) employing CP approach, exhibits similar output without increased resistivity losses at initial condition, in comparison with traditional high temperature soldering method. Moreover, 400 cycles (2,000 hour) of thermal cycle test reveals that the module integrated by CP approach withstands thermo-mechanical stress. Furthermore, this approach guarantees strong mechanical adhesion (peel strength of ~ 2 N) between cell and lead-free ribbons. Therefore, the CP based tabbing process for lead free ribbons enables to interconnect cells in c-Si PV module, without deteriorating its performance.

• Korean Journal of Materials Research
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• v.28 no.9
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• pp.528-533
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• 2018

In recent years, solar cells based on crystalline silicon(c-Si) have accounted for much of the photovoltaic industry. The recent studies have focused on fabricating c-Si solar modules with low cost and improved efficiency. Among many suggested methods, a photovoltaic module with a shingled structure that is connected to a small cut cell in series is a recent strong candidate for low-cost, high efficiency energy harvesting systems. The shingled structure increases the efficiency compared to the module with 6 inch full cells by minimizing optical and electrical losses. In this study, we propoese a new Conductive Paste (CP) to interconnect cells in a shingled module and compare it with the Electrical Conductive Adhesives (ECA) in the conventional module. Since the CP consists of a compound of tin and bismuth, the module is more economical than the module with ECA, which contains silver. Moreover, the melting point of CP is below $150^{\circ}C$, so the cells can be integrated with decreased thermal-mechanical stress. The output of the shingled PV module connected by CP is the same as that of the module with ECA. In addition, electroluminescence (EL) analysis indicates that the introduction of CP does not provoke additional cracks. Furthermore, the CP soldering connects cells without increasing ohmic losses. Thus, this study confirms that interconnection with CP can integrate cells with reduced cost in shingled c-Si PV modules.