• 분석과학
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• 제5권3호
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• pp.303-308
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• 1992

Ti과 Si의 초기 반응이 Titanium Silicide의 표면 거칠기 (Surface roughness)를 고찰하기 위해 연구하였다. 형성기구는 In-situ AES와 LEED의 측정장비로 연구하였다. Ti의 하나나 두 원자층이 초고진공에서 원자적으로 깨끗한 Si 기판 위에 증착되었다. Reconstruction이 된 $7{\times}7$ Si(111) 표면이 초 고진공하에서 얻어졌으며 박막의 증착은 Quartz Crystal Oscillator로 측정되었다. In-situ 측정 결과 Ti과 Si의 초기 반응이 실온에서 일어났으며 Disorder막을 형성하였다. 낮은 온도($200^{\circ}C{\sim}300^{\circ}C$)에서 Ti과 Si의 Intermixing이 고찰되었고 $400^{\circ}C$ 근처에서 $1{\times}1$ Si(111) LEED 패턴이 관찰되었다. 이것은 Disorder막이 Order막으로 변화가 생긴 것을 나타낸다. 더 높은 온도에서 $7{\times}7$ Si(111) LEED 패턴이 재관찰되었는데 이것은 3차원적인 $TiSi_2$의 형성을 증명하는 것이다.

• 한국재료학회지
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• 제14권5호
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• pp.305-309
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• 2004

Mechanical alloying (MA) of Ti-25.0～37.5at%Si powders was carried out in a high-energy ball mill, and in situ thermal analysis was also made during MA. In order to classify the synthesis behavior of the powders with respect to at%Si, the synthesis behavior during MA was investigated by in situ thermal analysis and X-ray diffraction (XRD). In situ thermal analysis curves and XRD patterns of Ti-25.0～26.1at%Si powders showed that there were no peaks during MA, indicating $Ti_{5}$ $Si_3$ was synthesised by a slow reaction of solid state diffusion. Those of Ti-27.1～37.5at%Si powders, however, showed that there were exothermic peaks during MA, indicating $_Ti{5}$ $Si_3$ and$ Ti_3$Si phase formation by a rapid exothermic reaction of self-propagating high-temperature synthesis (SHS). For Ti-27.1～37.5at%Si powders, the critical milling times for SHS decreased from 38.1 to 18.5 min and the temperature rise, ΔT (= peak temperature - onset temperature) increased form $19.5^{\circ}C$ to $26.7^{\circ}C$ as at%Si increased. The critical composition of Si for SHS reaction was found to be 27.1at% and the critical value of the negative heat of formation of Ti-27.1at%Si to be -1.32 kJ/g.

• 한국재료학회지
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• 제14권5호
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• pp.310-314
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• 2004

Mechanical alloying (MA) of Ti-50.0～66.7at%Si powders was carried out in a high-energy ball mill, and in situ thermal analysis was also made during MA. In order to classify the synthesis behavior of the powders with respect to at%Si, the synthesis behavior during MA was investigated by in situ thermal analysis and X-ray diffraction (XRD). In situ thermal analysis curves and XRD patterns of Ti-50.0～59.6at%Si powders showed that there were exothermic peaks during MA, indicating TiSi, $TiS_2$, and $Ti_{5}$ $Si_4$ phase formation by a rapid exothermic reaction of self-propagating high-temperature synthesis (SHS). Those of Ti-59.8～66.7 at%Si powders, however, showed that there were no peaks during MA, indicating any Ti silicide was not synthesised until MA 240 min. For Ti-50.0～59.6at%Si powders, the critical milling times for SHS increased from 34.5 min to 89.5 min and the temperature rise, $\Delta$T (=peak temperature-onset temperature) decreased form $26.2^{\circ}C$ to $17.1^{\circ}C$ as at%Si increased. The critical composition of Si for SHS reaction was found to be 59.6at% and the critical value of the negative heat of formation of Ti-59.6at%Si to be -1.48 kJ/g.

• 전기화학회지
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• 제13권1호
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• pp.19-33
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• 2010

초기 충전 과정에서 흑연 음극에 생성되는 표면피막은 리튬 이차전지의 중요한 구성 요소로 전지 반응은 표면피막의 본질에 크게 영향을 받는다. 따라서 표면피막의 물리화학적 성질을 이해하는 것은 매우 중요하다. 한편, 표면피막의 형성 반응은 흑연/전해질 계면에서 진행하는 매우 복잡한 계면 현상이며, 표면피막은 반응성이 높고 공기 중에서 불안정하기 때문에 리튬 이차전지의 전극 표면을 연구하는데 있어서 in-situ 실험 기술은 매우 중요하다. 이와 같은 점에서 전위가 제어된 상태에서 다양한 전기화학 반응이 진행하는 전극/용액 계면을 직접 관찰할 수 있는 전기화학적 원자간력 현미경(Electrochemical Atomic Force Microscopy, ECAFM)은 매우 유용한 도구이다. 본 총설에서는 흑연 음극에 생성되는 표면피막의 본질적 이해에 중점을 두어 표면피막의 생성기구 및 전해질과의 상관성에 관하여 in-situ ECAFM 분석 결과를 중심으로 하여 정리하였다.

• Applied Microscopy
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• 제43권2호
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• pp.88-97
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• 2013

Technical investigation to figure out the problems arising during in-situ heating electron backscatter diffraction (EBSD) analysis inside scanning electron microscopy (SEM) was carried out. EBSD patterns were successfully acquired up to $830^{\circ}C$ without degradation of EBSD pattern quality in steels. Several technical problems such as image drift and surface microstructure pinning were taking place during in-situ experiments. Image drift problem was successfully prevented in constant current supplying mode. It was revealed that the surface pinning problem was resulted from the $TiO_2$ oxide particle formation during heating inside SEM chamber. Surface pinning phenomenon was fairly reduced by additional platinum and carbon multi-layer coating before in-situ heating experiment, furthermore was perfectly prevented by improvement of vacuum level of SEM chamber via leakage control. Plane view in-situ observation provides better understanding on the overall feature of recrystallization phenomena and cross sectional in-situ observation provides clearer understanding on the recrystallization mechanism.

• BMB Reports
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• 제46권2호
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• pp.65-72
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• 2013

In situ detection of RNAs is becoming increasingly important for analysis of gene expression within and between intact cells in tissues. International genomics efforts are now cataloging patterns of RNA transcription that play roles in cell function, differentiation, and disease formation, and they are demon-strating the importance of coding and noncoding RNA transcripts in these processes. However, these techniques typically provide ensemble averages of transcription across many cells. In situ hybridization-based analysis methods complement these studies by providing information about how expression levels change between cells within normal and diseased tissues, and they provide information about the localization of transcripts within cells, which is important in understanding mechanisms of gene regulation. Multi-color, single-molecule fluorescence in situ hybridization (smFISH) is particularly useful since it enables analysis of several different transcripts simultaneously. Combining smFISH with immunofluorescent protein detection provides additional information about the association between transcription level, cellular localization, and protein expression in individual cells.

• 한국전기화학회:학술대회논문집
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• 한국전기화학회 2000년도 추계총회 및 학술발표회
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• pp.27-27
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• 2000

• Journal of Information Display
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• 제1권1호
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• pp.25-28
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• 2000

We propose a new in-situ fluorine passivation of poly-Si TFTs using excimer laser annealing to reduce the trap state density and improve reliability significantly. To investigate the effect of an in-situ fluorine passivation, we have fabricated fluorine-passivated p-channel poly-Si TFTs and examined their electrical characteristics and stability. A new in-situ fluorine passivation brought about an improvement in electrical characteristic. Such improvement is due to the formation of stronger Si-F bonds than Si-H bonds in poly-Si channel and $SiO_2$/Poly-Si interface.

• 한국초전도ㆍ저온공학회논문지
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• 제16권1호
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• pp.19-22
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• 2014

The effects of Mg content on the pore formation, density and critical properties were investigated in in-situ reacted $MgB_2$ superconductors. The $Mg_{1+x}B_2$, (x=-0.2, 0.0, 0.05, 0.3, 1.0) bulk samples with different Mg contents were heat-treated at $900^{\circ}C$ for 1 h in an Ar atmosphere. The dimensional changes of a pellet's mass and volume after heat-treatment were measured. After heat-treatment process, the sample mass was decreased by Mg evaporation, but the sample volume was expanded by pore formation at the Mg site; therefore, the apparent density was decreased. Spherical pores the same as Mg particles were developed after heat-treatment in all samples, and the pore density was increased with increasing Mg content. As the x of Mg content was increased to 1.0, the apparent density of $Mg_{1+x}B_2$ samples was decreased due to a relatively larger reduction in a mass change. The critical current density of Mg excessive sample of x=0.05 showed the highest values over the applied magnetic fields because the excessive Mg may compensate Mg loss and enhance grain connectivity.

• 한국정보통신학회논문지
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• 제5권6호
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• pp.1128-1135
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• 2001

본 논문에서는 HSG형성을 위한 Si$_2$H$_{6}$의 조사와 어닐링을 통한 seeding method를 64Mbit DRAM에 적용하였다. 이 기술을 사용함으로서 인이 도우핑된 Amorphous 실리콘의 전극에 HSG grain 크기를 조절할 수 있었고, 이 새로운 HSG형성조건은 기존의 stack 캐패시터보다 약 2배의 정전용량을 확보할 수 있었다. 이와같은 방법을 이용한 HSG형성에서 인농도, 저장폴리 증착온도 및 HSG의 두께에 대한 공정 최적 조건으로는 각각 3.0-4.OE19atoms/㎤ , 53$0^{\circ}C$ 및 400$\AA$이었다. 이들 최적화된 공정조건으로 64M bit DRAM 캐패시터에 적용시 질화막의 두께 한계는 65$\AA$으로 확인되었다.