• Membrane Journal
• /
• v.17 no.3
• /
• pp.254-268
• /
• 2007

Sodium type faujasite(FAU) zeolite layers with diverse materials characteristics(Si/Al ratio, thickness, and structural discontinuity) were hydrothermally grown on a porous $\alpha-Al_2O_3$ tube, and then the $CO_2/N_2$ separation was evaluated at $30^{\circ}C$ for an equimolar mixture of $CO_2$ and $N_2$. Among hydrothermal conditions, $SiO_2$ content in hydrothermal solution seriously affected materials characteristics: with an increment in the $SiO_2$ content, Si/Al ratio, thickness, and structural discontinuity of grown FAU zeolite layer simultaneously increased. The present study reveals that structural discontinuity(intercrystalline voids due to an incomplete densification and cracks induced by GIS Na-P1 phase) is the most important variable affecting the $CO_2/N_2$ separation. Also, it was suggested that the $CO_2$ desorption in permeate side be the rate-determining(slowest) step in the overall $CO_2$ permeation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.12
• /
• pp.942-948
• /
• 2010

In this study we aims to examine the effects of 0.5 mol% $Cr_2O_3$ addition on the reaction, microstructure development, resultant electrical properties, and especially the bulk trap and interface state levels of ZnO-$Bi_2O_3-Sb_2O_3$ (Sb/Bi=0.5, 1.0, and 2.0) systems (ZBS). The samples were prepared by conventional ceramic process, and characterized by XRD, density, SEM, I-V, impedance and modulus spectroscopy (IS & MS) measurement. The sintering and electrical properties of Cr-doped ZBS (ZBSCr) systems were controlled by Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$) was decomposed more than $100^{\circ}C$ lowered on heating in ZBS (Sb/Bi=1.0) by Cr doping. The densification of ZBSCr (Sb/Bi=0.5) system was retarded to $800^{\circ}C$ by unknown Bi-rich phase produced at $700^{\circ}C$. Pyrochlore on cooling was reproduced in all systems. And $Zn_7Sb_2O_{12}$ spinel ($\alpha$-polymorph) and $\delta-Bi_2O_3$ phase were formed by Cr doping. In ZBSCr, the varistor characteristics were not improved drastically (non-linear coefficient $\alpha$ = 7~12) and independent on microstructure according to Sb/Bi ratio. Doping of $Cr_2O_3$ to ZBS seemed to form $Zn_i^{..}$(0.16 eV) and $V^{\bullet}_o$ (0.33 eV) as dominant defects. From IS & MS, especially the grain boundaries of Sb/Bi=0.5 systems were divided into two types, i.e. sensitive to oxygen and thus electrically active one (1.1 eV) and electrically inactive intergranular one (0.95 eV) with temperature.

• Korean Journal of Materials Research
• /
• v.3 no.5
• /
• pp.553-561
• /
• 1993

In this study, thr effect of $Bi_2O_3$ and BN addition as grain boundary modifiers on sintering and electrical properties of semiconducting PTCR(Positive Temperature Coefficient of Resistivity) mate rial were analyzed using TMA, XRD and Complex Impedance Spectroscopy method. Bismut.h Ox~de and Boron Nitride were added to Y-doped $BaTiO_3$ respectively. Bismuth sesquioxide up to O.lmol%solubil~ ty limit of $Bi_2O_3$ in Y--$BaTiO_3$ ceramics-retarded densification and grain growth, and further addition mitigated these retardation effects. The resistivity at room temperature increased with increasing amount of $Bi_2O_3$ and thus decreased the PTCR effect, probably due to the $Bi_2O_3$ segregation on the grain boundaries. From the complex ~mpedance pattern, it is known that the grain boundary resisitivity is dominant on the whole resistivity of sample. In the result of applying the defect chemistry, $Bi^{3+} \;and \; Bi^[5+}$ are substituted for Ua and Ti site, respectively. Boron nitride decomposed and formed liquid phase among the $BaTiO_3$ grains. The decomposed com~ ponents made the second phase and existed the tr~ple juntion from the result of EPMA. From the complex impendencc pattern, the gram and grain boundary resistivity were small. The grain size increased with increasing BN contents, and decreased grain boundary resistivity enhanced the PTCR effect.

• Proceedings of the Korea Concrete Institute Conference
• /
• 2008.04a
• /
• pp.1077-1080
• /
• 2008

Material parameters such as surface chloride content, water permeability coefficient, chloride diffusivity and critical chloride content are a substantial key parameter for understanding the durability performance of concrete and its micro-structural densification. Over the past few decades, a considerable number of studies on the durability design for marine concrete structures have been carried out. However, the results are different to each other. In order to establish a consistent durability design system of concrete, it is a precondition to define material parameters, which affect deterioration of concrete due to chloride penetration. Such parameters are surface chloride content, chloride diffusivity, and critical chloride content. Usually these parameters are assumed as temporary constant values or obtained from the experimental results for short term. However, it is necessary to define these parameters reasonably, because these significantly influence the calculation of service life of concrete. In this paper, it is introduced to define material parameters of concrete for chloride diffusion, such as surface chloride content $[Cl]_s$, water permeability coefficient K, chloride diffusivity $D_{Cl}$, critical chloride content $[Cl]_{cr}$. These are expressed as time function considering hydration evolution of hardened cement paste. The definition of the material parameters is a prerequisite to simulate chloride penetration into concrete as time elapsed.

• Korean Journal of Materials Research
• /
• v.4 no.7
• /
• pp.775-782
• /
• 1994

Influence of $TiO_{2}$ addition on sintering behavior and microstructure of MgO-$ZrO_{2}$ composites was studied. $ZrO_{2}$ containing 3mol%Y203 was existed as a c-$ZrO_{2}$ phase due to the formation of solubility of MgO, $TiO_{2}$ and $ZrO_{2}$ when sintered $1400^{\circ}C$ for 2h. All the compositions employed exhibited a similar shrinkage behavior with an end-point shrinkage between 8.58 and 11.00%. The additlon of $TiO_{2}$ promoted densification and the bulk density of specimen containing 1.67wt% $TiO_{2}$ was 3.75g/$\textrm{cm}^3$(98% TD) when $1600^{\circ}C$ for 2h. The amount of solubilities of MgO and TiOz in $ZrO_{2}$ were 5.ti7wt% and 2.62wt%,respectively. They were partially segregated near $ZrO_{2}$ grain boundary in the form of Ti-compounds during cooling. This segregation resulted in the formation microcracks which decreased the bending strength.

• Journal of the Microelectronics and Packaging Society
• /
• v.22 no.4
• /
• pp.83-89
• /
• 2015

In this paper, we propose a fabrication technique for enhanced electrical properties of piezoelectric thick films with excellent patterning property using sol-infiltration and a direct-patterning process. To achieve the needs of high-density and direct-patterning at a low sintering temperature (< $850^{\circ}C$), a photosensitive lead zirconate titanate (PZT) solution was infiltrated into a screen-printed thick film. The direct-patterned PZT films were clearly formed on a locally screen-printed thick film, using a photomask and UV light. Because UV light is scattered in the screen-printed thick film of a porous powder-based structure, there are needs to optimize the photosensitive PZT sol infiltration process for obtaining the enhanced properties of PZT thick film. By optimizing the concentration of the photosensitive PZT sol, UV irradiation time, and solvent developing time, the hybrid films prepared with 0.35 M of PZT sol, 4 min of UV irradiation and 15 sec solvent developing time, showed a very dense with a large grain size at a low sintering temperature of $800^{\circ}C$. It also illustrated enhanced electrical properties (remnant polarization, $P_r$, and coercive field, $E_c$). The $P_r$ value was over four times higher than those of the screen-printed films. These films integrated on silicon wafer substrate could give a potential of applications in micro-sensors and -actuators.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.176-176
• /
• 2009

Influences of dose and particle size of $Al_2O_3$ filler and sintering time on the dielectric properties of $Al_2O_3$ filler/CaO-$Al_2O_3-SiO_2$ (CAS) glass composites were investigated with a view to applying the composites to the substrate material in low temperature co-firing ceramic (LTCC) technology. The increased addition of $Al_2O_3$ filler with the particle size of 1 ${\mu}m$ monotonically decreased the density of the sintered specimen at a given temperature, while sintering of the 10 wt% $Al_2O_3$ added specimen at $925^{\circ}C$ for 2 h demonstrated 96.0 % of the relative density, dielectric constant of 6.34, and quality factor of 2,760 GHz. As for the influence of the particle size of the $Al_2O_3$ filler, there existed an optimum particle size (30 ${\mu}m$) to ensure successful densification (96.5 %) of the 10 wt% $Al_2O_3$/CAS composites at $925^{\circ}C$ for 2 h, at which condition the specimen demonstrated dielectric constant of 5.45 and quality factor of 3,740 GHz. When the influence of the sintering time of the 10 wt% $Al_2O_3$) (30 ${\mu}m$) added specimen was investigated at the sintering temperature of $925^{\circ}C$, an overly long sintering time degraded dielectric properties due to the over-sintering and the significant growth of the second phase such as anorthite, while the sintering for 4 h demonstrated 96.58 % of the relative density, dielectric constant of 5.4, and quality factor of 4,050 GHz. These results demonstrate the feasibility of the investigated material as the substrate material in LTCC technology.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.19 no.1
• /
• pp.33-38
• /
• 2009

The effect of ${Y_2}{O_3}$ as a sintering additive on thermal conductivity and microstructure of pressureless sintered AIN ceramics was investigated at sintering temperature range from 1,700 to $1,900^{\circ}C$. ${Y_2}{O_3}$ added AIN specimens showed higher densification rate than pure AIN because of the formation of the yttrium aluminates secondary phase by reaction of ${Y_2}{O_3}$ and ${Al_2}{O_3}$ of AIN surface. The thermal conductivity of AIN specimens was promoted by the addition of ${Y_2}{O_3}$ in spite of the formation of secondary phase in AIN gram boundaries and grain boundary triple junction, because ${Y_2}{O_3}$ addition could reduced the oxygen contents in AIN lattice which is primary factor of thermal conductivity. The them1al conductivity of AIN specimens was promoted by increasing sintering time because the increases of average grain size and the elimination of secondary phases from the grain boundary due to the evaporation. Particularly. the thermal conductivity of AIN specimen sintered at $1,900^{\circ}C$ for 5 hours improved over 20 %. $141\;Wm^{-1}K^{-1}$, compared with the specimen sintered at $1,900^{\circ}C$ for 1 hour.

• Journal of the Korean Ceramic Society
• /
• v.49 no.2
• /
• pp.197-203
• /
• 2012

In this study, in order to improve densification of $La_{0.8}Ca_{0.2}Cr_{0.9}Co_{0.1}O_{3-\delta}$ (LCCC), which is known for one of the most proper candidate interconnector materials in the solid oxide fuel cells, $CaCrO_4$ was prepared via solid oxide synthesis route and added to the LCCC with different amount and particle sizes. As the amount of the $CaCrO_4$ increased, porosity of the sintered samples increased, and the pore size was proportional to the particle size of the $CaCrO_4$. This supports the fact that the $CaCrO_4$ phase forms liquid during sintering and permeate into the matrix leaving behind large pores. Then the liquid reacts with the matrix through the solid solution. However, when the samples were sintered with a slow ramp up rates, the porosity decreased. This is thought to be caused by the progressive solid solution of $CaCrO_4$ before the temperature reach to the melting temperature and forms a fluent amount of liquids. The sintering behavior of the LCCC with the addition of $CaCrO_4$ was analyzed through the transient liquid phase sintering on the basis of the microstructure observation and phase identification by x-ray diffraction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.6
• /
• pp.683-689
• /
• 2004

The microstructure and electrical characteristics of A ∼ C's ZnO varistors fabricated according to variable sintering condition, which sintering temperature was 1130 $^{\circ}C$ and speeds of pusher were A: 2 mm/min, B: 4 mm/min, C: 6 mm/min, respectively, were investigated. The experimental results obtained from this study were summarized as follows: The sintering density of A ∼C's ZnO varistors sintered at 1130 $^{\circ}C$ were decreased by sintering keep time to shorten, such as A: 9hour, B: 4.5hour and C: 3hour. A's ZnO varistor exhibited good densification nearly 98 % of theory density. In the microstructure, A∼C's ZnO varistors fabricated variable sintering condition was consisted of ZnO grain(ZnO), spinel phase(Z $n_{2.33}$S $b_{0.67}$ $O_4$), Bi-rich phasc(B $i_2$ $O_3$), wholly. Varistor voltage of A∼C's ZnO varistors sintered at 1130 $^{\circ}C$ increased in order A