Journal of the Microelectronics and Packaging Society (마이크로전자및패키징학회지)

The Korean Microelectronics and Packaging Society (한국마이크로전자및패키징학회)
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Hybrid Fabrication of Screen-printed Pb(Zr,Ti)O3 Thick Films Using a Sol-infiltration and Photosensitive Direct-patterning Technique

졸-침투와 감광성 직접-패턴 기술을 이용하여 스크린인쇄된 Pb(Zr,Ti)O3 후막의 하이브리드 제작

  • Lee, J.-H. (Department of Materials Science and Engineering, Yonsei University) ;
  • Kim, T.S. (Center for BioMicrosystems, Korea Institute of Science Technology (KIST)) ;
  • Park, H.-H. (Department of Materials Science and Engineering, Yonsei University)
  • 이진형 (연세대학교 신소재공학과) ;
  • 김태송 (한국과학기술연구원 바이오마이크로시스템) ;
  • 박형호 (연세대학교 신소재공학과)
  • Received : 2015.12.14
  • Accepted : 2015.12.28
  • Published : 2015.12.30
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Abstract

In this paper, we propose a fabrication technique for enhanced electrical properties of piezoelectric thick films with excellent patterning property using sol-infiltration and a direct-patterning process. To achieve the needs of high-density and direct-patterning at a low sintering temperature (< $850^{\circ}C$), a photosensitive lead zirconate titanate (PZT) solution was infiltrated into a screen-printed thick film. The direct-patterned PZT films were clearly formed on a locally screen-printed thick film, using a photomask and UV light. Because UV light is scattered in the screen-printed thick film of a porous powder-based structure, there are needs to optimize the photosensitive PZT sol infiltration process for obtaining the enhanced properties of PZT thick film. By optimizing the concentration of the photosensitive PZT sol, UV irradiation time, and solvent developing time, the hybrid films prepared with 0.35 M of PZT sol, 4 min of UV irradiation and 15 sec solvent developing time, showed a very dense with a large grain size at a low sintering temperature of $800^{\circ}C$. It also illustrated enhanced electrical properties (remnant polarization, $P_r$, and coercive field, $E_c$). The $P_r$ value was over four times higher than those of the screen-printed films. These films integrated on silicon wafer substrate could give a potential of applications in micro-sensors and -actuators.

본 논문에서는 졸-침투와 직접-패턴 공정을 이용하여 향상된 압전 후막의 전기적 특성과 우수한 패터닝 특성을 동시에 만족할 수 있는 제작 방법을 제시한다. 저온(< $850^{\circ}C$) 공정 후 후막의 고밀도 및 직접-패턴의 목적을 달성하기 위해서, 감광성 티탄산 지르콘산 연 ($Pb(Zr,Ti)O_3$, PZT) 졸을 스크린인쇄된 PZT 후막 내부로 침투시켰다. 직접-패턴된 PZT막은 포토크롬마스크와 UV 조사에 의해서 일정한 간격으로 인쇄된 후막 위에 성공적으로 형성되었다. 스크린인쇄된 후막은 분말형태의 기공성 구조를 갖고 있어 조사된 UV빛이 산란되기 때문에, 감광성 졸-침투 공정을 할 때 PZT 후막의 특성을 증가시키기 위한 공정의 최적화가 필요하다. 침투된 감광성 PZT 졸의 농도, 조사된 UV 시간 및 용매 현상 시간을 최적화한 결과, 0.35 M의 PZT 농도, 4 분의 UV 조사시간과 15 초의 용매 현상시간으로 졸-침투된 PZT 후막은 $800^{\circ}C$ 소결 온도에서 입자들의 성장에 의해 치밀화 정도가 증가되었다. 또한 PZT후막의 강유전 특성(잔류분극 및 항복 전압)도 향상되었다. 특히 잔류분극값은 스크린인쇄된 후막보다 약 4배정도 증가되었다. 이렇게 제작된 후막은 어레이타입의 압전형 마이크로미터크기의 센서 및 액츄에이터 등에 응용 가능성을 제시할 수 있었다.

Keywords

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