• Journal of Conservation Science
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• v.32 no.3
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• pp.313-320
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• 2016

The aim of this study was to obtain information on the ancient material of cast bronze through an investigation of the microstructure and impurity characteristics of the casting. Three Koryo bronze coins were analyzed using an optical microscope, scanning electron microscope, and electron dispersive X-ray analyses were used to determine the composition of the specimens. The three coins had 4 phases: ${\alpha}phase$, ${\delta}phase$, Pb, and impurities ($Cu_2S$). $Cu_2S$ was found to exist near Pb or in ${\delta}phase$. $Cu_2S$ is the inter mediate product of copper ore refining. Therefore, the copper ore was not completely refined. To find out the characteristic of $Cu_2S$, we melt 1)Koryo bronze coin and 2)$Cu_2S$ and Pb powder at 1273 K. The reaction between $Cu_2S$ and Pb at 1273 K yielded fine Cu and black gas, which was identified to be PbS and is presented below: $Cu_2S+Pb{\rightarrow}PbS{\uparrow}+2Cu$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.05a
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• pp.496-499
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• 2014

Xe Gas is moved to Target from GPM. It is Used to feasible nuclear reaction from proton of 30MeV Cyclotron being investigated by the Xe-124 Gas target System. This system is divided into four parts. Hardware was constructed by solidworks and Helium Supply is to cool the Havor Foil. Water has the job of cooling down the temperature when Xe Gas is being investigated in the target. Temperature and pressure gauges are attached to be checked easily. GPM(Gas Process Manifold) has the part that prepares to transport Xe Gas. There are Storage Vessel that stores Xe Gas, the cold trap that filters humidity and impurity and lastly storage vessel that temporarily stores Xe Gas. HCS(Helium Circulation System) using the Helium to cleaning and cooling. these parts are used to SIEMENS PLC and Pcvue Program. Because It is more comfortable and easy maintenance.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.211-211
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• 1999

Titanium nitride (TiN) thin films have useful properties including high hardness, good electrical conductivity, high melting point, and chemical inertness. The applications have included wear-resistant hard coatings on machine tools and bearings, decorative coating making use of the golden color, thermal control coatings for widows, and erosion resistant coatings for spacecraft plasma probes. For all these applications as feature sizes shrink and aspect ratios grow, the issue of good step coverage becomes increasingly important. It is therefore essential to manufacture conformal coatings of TiN. The growth of TiN thin films by chemical vapor deposition (CVD) is of great interest for achieving conformal deposition. The most widely used precursor for TiN is TiCl4 and NH3. However, chlorine impurity in the as-grown films and relatively high deposition temperature (>$600^{\circ}C$) are considered major drawbacks from actual device fabrication. To overcome these problems, recently, MOCVD processes including plasma assisted have been suggested. In this study, therefore, we have doposited Ti(C, N) thin films on Si(100) and D2 steel substrates in the temperature range of 150-30$0^{\circ}C$ using tetrakis diethylamido titanium (TDEAT) and titanium isopropoxide (TIP) by pulsed DC plamsa enhanced metal-organic chemical vapor deposition (PEMOCVD) method. Polycrystalline Ti(C, N) thin films were successfully grown on either D2 steel or Si(100) surfaces at temperature as low as 15$0^{\circ}C$. Compositions of the as-grown films were determined with XPS and RBS. From XPS analysis, thin films of Ti(C, N) with low oxygen concentration were obtained. RBS data were also confirmed the changes of stoichiometry and microhardness of our films. Radical formation and ionization behaviors in plasma are analyzed by optical emission spectroscopy (OES) at various pulsed bias and gases conditions. H2 and He+H2 gases are used as carrier gases to compare plasma parameter and the effect of N2 and NH3 gases as reactive gas is also evaluated in reduction of C content of the films. In this study, we fond that He and H2 mixture gas is very effective in enhancing ionization of radicals, especially N resulting is high hardness. The higher hardness of film is obtained to be ca. 1700 HK 0.01 but it depends on gas species and bias voltage. The proper process is evident for H and N2 gas atmosphere and bias voltage of 600V. However, NH3 gas highly reduces formation of CN radical, thereby decreasing C content of Ti(C, N) thin films in a great deal. Compared to PVD TiN films, the Ti(C, N) film grown by PEMOCVD has very good conformability; the step coverage exceeds 85% with an aspect ratio of more than 3.

• Analytical Science and Technology
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• v.30 no.5
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• pp.240-251
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• 2017

1,1,1,2-Tetrafluoroethane (HFC-134a), which is used as refrigerant in air conditioners, has been recently regulated as a greenhouse gas and is recommended for reuse by refining. It is very important to quantitatively analyze trace impurities present in the refrigerant to evaluate the criteria for reuse. In this study, trace impurities including C, H, Cl, and F, which are difficult to quantify because there are no reference materials, were quantitatively analyzed by a gas chromatograph-atomic emission detector (GC/AED); for this analysis, this was preceded by a qualitative analysis with a GC-mass selective detector (GC/MSD). In addition, the AED response was investigated using a hydrocarbon mixed reference material, which was proportional to the number of atoms in the component. Fifteen refrigerant components were detected as trace impurities in HFC-134a by qualitative analysis of trace impurities including C, H, Cl, and F in the samples. Based on the results of the qualitative analysis, quantitative analysis of trace impurities using AED showed that the highest mole fractions were for the $CHClF_2$ component ($45438.38{\mu}mol/mol$) in one sample and for the $C_2H_2ClF_3$ component ($1311.47{\mu}mol/mol$) in another sample. From this study, it has been shown that it is possible for this analytical method to be applied to the qualitative and quantitative analysis of trace compounds in refrigerants, which are difficult to quantify because of the absence of reference materials.

• Journal of the Korean Ceramic Society
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• v.49 no.4
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• pp.380-384
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• 2012

This paper deals with the recent developments of high thermal conductivity silicon nitride ceramics. First, the factors that reduce the thermal conductivity of silicon nitride are clarified and the potential approaches to realize high thermal conductivity are described. Then, the recent achievements on the silicon nitride fabricated through the reaction bonding and post sintering technique are presented. Because of a smaller amount of impurity oxygen, the obtained thermal conductivity is substantially higher, compared to that of the conventional gas-pressure sintered silicon nitride, while the microstructures and bending strengths are similar to each other between these two samples. Moreover, further improvement of the thermal conductivity is possible by increasing ${\beta}/{\alpha}$ phase ratio of the nitrided sample, resulting in a very high thermal conductivity of 177 W/($m{\cdot}K$) as well as a high fracture toughness of 11.2 $MPa{\cdot}m^{1/2}$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.3
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• pp.125-132
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• 2010

For typical governing dimensionless parameters of Ar = 5, Pr = 1.16, Le = 0.14, Pe = 3.57, Cv = 1.02, $Gr_s=2.65{\times}10^6$, the effects of thermo physical properties such as a molecular weight, a binary diffusivity coefficient, a partial pressure of component B on solutally buoyancy-driven convection (solutal Grashof number $Gr_s=2.65{\times}10^6$) are theoretically investigated for further understanding and insight into an essence of solutal convection occurring in the vapor phase during the physical vapor transport of a $Hg_2Cl_2-N_2$ system. The solutally buoyancy-driven convection is significantly affected by any significant disparity in the molecular weight of the crystal components and the impurity gas of nitrogen. The solutal convection in a vertical orientation is found to be more suppressed than a tenth reduction of gravitational accelerations in a horizontal orientation. For crystal growth parameters under consideration, the greater uniformity in the growth rate is obtained for either solutal convection mode in a vertical orientation or thermal convection mode in horizontal geometry. The growth rate is also found to be first order exponentially decayed for $10{\leq}P_B{\leq}200$ Torr.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.5
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• pp.367-372
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• 2020

As packaging processes for atomic gyroscope vapor cells, the glass tube tip-off process, anodic bonding, and paste sealing have been widely studied. However, there are stability issues in the alkali metal which are caused by impurity elements and leakage during high-temperature processes. In this study, we investigated the applicability of a vapor cell low-temperature packaging process by depositing Au on a Pyrex cell in addition to forming an Au-Sn thin film on a cap to cover the cell, followed by laser irradiation of the Au/Au-Sn interface. The mechanism of the thin film bonding was evaluated by XRD, while the packaging reliability of an Ne gas-filled vapor cell was characterized by variation of plasma discharge behavior with time. Furthermore, we confirmed that the Rb alkaline metal inside the vapor cell showed no color change, indicating no oxidation occurred during the process.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1585-1587
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• 2001

ac PDP 동작에 있어 미량 불순물 가스는 panel 내의 휘도 및 방전 특성에 많은 영향을 미칠것으로 생각된다. $O_2$, O, C 및 $H_2$와 같은 불순물 가스는 ac PDP의 제조 공정 중에 발생하거나, 충전된 방전가스에 혼합되어 발생하는 등 여러 가지 원인으로 나타난다. 이 논문에서는, ac PDP의 동작 가스 중에 미량의 불순물 가스(Ar, $N_2$, $O_2$, $H_2$, $CO_2$)를 주입하여, 이 미량의 불순물 가스로 인한 ac PDP의 휘도 및 방전의 특성변화에 대한 관계를 조사하였다. 그 결과, $O_2$ 가스의 분압이 $2{\times}10^{-3}$/He+Ne+Xe(4%)일 경우, 방전전압은 12% 증가하였고, 휘도는 60% 감소하였다. 또한, $CO_2$ 가스의 경우는 방전전압은 14% 증가하였고, 휘도는 44% 감소하였다.

• Transactions of the Korean hydrogen and new energy society
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• v.1 no.1
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• pp.31-39
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• 1989

Although it has been well known that many metal hydrides are promising to use for hydrogen storage and other applications, some difficulties still remain. Metal hydrides, particularly in powder form, have very poor thermal conductivity. The hydrogen storage alloys degrade intrinsically or extrinsically during repeated hydriding and dehydriding. Elimination of these problems is very important in the practical applications. In order to prevent degradation and to improve the thermal conductivity, the hydrogen storage characteristics of rare-earth type alloy encapsulated with Cu or Ni by means of chemical plating have been investigated. No changes has occured in hydrogen absorption capacity and equilibrium pressure even though the alloy powder is microencapsulated. The first hydrogen absorption rate of the alloy encapsulated increased considerably comparing to uncapsulated sample. In the case of encapsulating the fine powder ($>10{\mu}m$) and subsequent compacting by $8ton/cm^2$, shape of compact is maintained regardless of hydriding and dehydriding. The degree of degradation of the alloy caused by impurity gas of CO or $O_2$ was decreased prominently by encapsulation.

• Applied Science and Convergence Technology
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• v.27 no.3
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• pp.47-51
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• 2018

We fabricated an anode-type ion beam source and studied its driving characteristics of the initial extraction of ions using two driving mechanisms: a diffusion phenomenon and a charge repulsion phenomenon. For specimen exposed to the ion beam in two methods, the surface impurity element was investigated by using X-ray photoelectron spectroscopy. Upon Ar gas injection for plasma generation the ion beam source was operated for 48 hours. We found a Fe 2p peak 5.4 at. % in the initial ions by the diffusion mechanism while no indication of Fe in the ions released in the charge repulsion mechanism. As for a long operation of 200 min, the temperature of ion beam sources was measured to increase at the rate of ${\sim}0.1^{\circ}C/min$ and kept at the initial value of $27^{\circ}C$ for driving by diffusion and charge repulsion mechanism, respectively. In this study, we confirmed that the ion beam source driven by the charge repulsion mechanism was very efficient for a long operation as proved by little electrode damage and thermal stability.