• Journal of the Korean institute of surface engineering
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• v.51 no.2
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• pp.126-132
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• 2018

SnS thin films with different substrate temperatures ($150 {\sim}300^{\circ}C$) as process parameters were grown on soda-lime glass substrates by RF magnetron sputtering. The effects of substrate temperature on the structural and optical properties of SnS thin films were investigated by X-ray diffraction (XRD), Raman spectroscopy (Raman), field-emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS), and Ultraviolet-visible-near infrared spectrophotometer (UV-Vis-NIR). All of the SnS thin films prepared at various substrate temperatures were polycrystalline orthorhombic structures with (111) planes preferentially oriented. The diffraction intensity of the (111) plane and the crystallite size were improved with increasing substrate temperature. The three major peaks (189, 222, $289cm^{-1}$) identified in Raman were exactly the same as the Raman spectra of monocrystalline SnS. From the XRD and Raman results, it was confirmed that all of the SnS thin films were formed into a single SnS phase without impurity phases such as $SnS_2$ and $Sn_2S_3$. In the optical transmittance spectrum, the critical wavelength of the absorption edge shifted to the long wavelength region as the substrate temperature increased. The optical bandgap was 1.67 eV at the substrate temperature of $150^{\circ}C$, 1.57 eV at $200^{\circ}C$, 1.50 eV at $250^{\circ}C$, and 1.44 eV at $300^{\circ}C$.

• Journal of Powder Materials
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• v.18 no.3
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• pp.283-289
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• 2011

Magnesium hydroxide sulfate hydrate whiskers ($5Mg(OH)_2{\cdot}MgSO_4{\cdot}3H_2O$, abbreviated 513 MHSH) were prepared using hydrothermal reaction with magnesium oxide (MgO) and magnesium sulfate ($MgSO_4{\cdot}7H_2O$) as the starting materials. The effects of the molar ratio of $MgSO_4$/MgO and amount of $NH_4OH$ were studied. As a result, 513 MHSH whiskers co-existed with hexagonal plate $Mg(OH)_2$ at low concentration of $SO_4^{2-}$. The molar ratio of $MgSO_4{\cdot}7H_2O$/MgO was 7:1, uniform 513 MHSH whiskers were formed without impurity such as $Mg(OH)_2$. Appropriate amount of $NH_4OH$ has affected to formation of high quality MHSH. Their morphologies and structures were determined by powder X-ray diffraction (XRD) scanning electron microscopy (SEM) and thermo-gravimetric analyzer (TGA).

• Journal of the Korean Vacuum Society
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• v.16 no.5
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• pp.348-352
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• 2007

In submicron processes, the feature size of ULSI devices is critical, and it is necessary both to reduce the RC time delay for device speed performance and to enable higher current densities without electromigration. In case of contacts between semiconductor and metal in semiconductor devices, it may be very unstable during the thermal annealing process. To prevent these problems, we deposited tungsten carbon nitride (W-C-N) ternary compound thin film as a diffusion barrier for preventing the interdiffusion between metal and semiconductor. The thickness of W-C-N thin film is $1,000{\AA}$ and the process pressure is 7mTorr during the deposition of thin film. In this work we studied the interface effects W-C-N diffusion barrier using the XRD and 4-point probe.

• Journal of Sensor Science and Technology
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• v.8 no.2
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• pp.189-194
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• 1999

The heat treatment effects of the undoped ZnO and Al doped ZnO(AZO) transparent conductive films prepared by rf magnetron sputtering were investigated. The variations of the electrical and optical properties with heat treatment temperature and ambient were studied. The resistivity of the un doped ZnO films heat treated in air and $H_z$ plasma for 1 hour increased rapidly above $200^{\circ}C$ and $300^{\circ}C$, respectively. And that of the ZnO:Al films heat treated in air also increased rapidly above $300^{\circ}C$. On the other hand that of the ZnO:Al films heat treated in $H_z$ plasma was constant regardless of heat treatment temperature. The optical transmittance above 550nm is about 90% for all thin films regardless of impurity doping, the heat treatment temperature and ambient.

• Journal of Powder Materials
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• v.5 no.1
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• pp.42-49
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• 1998

A study on the improvement of the impact energy in 93W heavy alloy with a Ni/Fe ratio of 9/1 has been carried out as a function of heat treatment temperature. The obtained results were compared to that of the traditional alloy system in which the Ni/Fe ratio is 7/3 or 8/2. With increasing heat treatment temperature from 1150 to 125$0^{\circ}C$, the impact energy of the alloy with the Ni/Fe ratio of 9/1 is remarkably increased from 42 to 72 J, which is higher than that of traditional alloy, up to 118$0^{\circ}C$ and then saturated. Fracture mode was also changed from brittle W/W boundary failure to W cleavage. The temperature showing the dramatic shrinkage by dilatometric anaysis of the heavy alloy with Ni/Fe ratio of 9/1 was found to be 1483 $^{\circ}C$, which is higher than that (146$0^{\circ}C$) of the heavy alloy with Ni/Fe ratio of 7/3. Auger Electron Spectroscopy showed that the segregation of impurities, such as S, P, and C in W/W grain boundary was considerably decreased with increasing heat treatment temperature from 1150 to l18$0^{\circ}C$. From the above results, it was found that the impurity segregation in W/W grain boundary played an important role on the decrease of impact properties, and the heat treatment temperature should be appropriately chosen, as considering the Ni/Fe ratio of the alloy, in order to get good impact properties.

• Journal of the Korean Ceramic Society
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• v.35 no.1
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• pp.23-32
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• 1998

Al2O3/Al composites were produced by immersing the sintered silica preform in molten aluminum which contained magnesium as impurity. Three distinct regions existed in the penetration behavior of molten me-tal with changing the reaction temperature. These regions are denoted as low temperature regime(75$0^{\circ}C$-85$0^{\circ}C$) intermediate regime(90$0^{\circ}C$-95$0^{\circ}C$) and high temperature regime(100$0^{\circ}C$$\leq$) In the low temperature regime the penetration speed of molten aluminum increased with increasing reaction temperature whereas it decreased in the intermediate regime due to the phase transition of alumina formed by displacement reac-tion. In the high temperature regime the penetration speed of molten aluminum was the highest at 100$0^{\circ}C$ which was 3.6 mm/hr But above 105$0^{\circ}C$ molten aluminum did not penetrate into the silica preform because of the formation of a dense spinel layer at the preform surface by magnesium in molten Al.

• Journal of Magnetics
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• v.12 no.3
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• pp.118-123
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• 2007

We have studied the effect of Au-Cu back layer system ${\sim}10{\AA}$ thick on the properties of a spin valve. The back layers were Cu, Au, co-sputtered $Cu_xAu_{1-x}$, laminated $[Au/Cu]_n$. and bi-layer [Au/Cu]. When Au was added to the Cu, the resistance of the spin valve abruptly increased most likely due to impurity scattering. The GMR values were not increased significantly for all the structures. In the case of co-sputtered $Cu_xAu_{1-x}$, the changes in the resistance, ${\Delta}R$, was increased at a composition of ${\sim}Au_{0.5}Cu_{0.5}$. This increase in ${\Delta}R$ is due to increase in the resistance and not from the enhanced spin-dependent scattering. The structural analyses showed that the orthorhombic $Au_{0.5}Cu_{0.5}$ was formed in the back layer instead of the face-centered tetragonal $Au_{0.5}Cu_{0.5}$ as we expected. Thermal annealing over $400^{\circ}C$ may be required to have face-centered tetragonal in the $10{\AA}$ thick ultra-thin film. In the case of a laminated or bi-layered back layer, the properties of the spin valve were improved, which may be attributed to the increase in the mean free path of conduction electrons.

• Journal of IKEEE
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• v.21 no.1
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• pp.96-99
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• 2017

In this study the influence of the random dopant fluctuation (RDF) depending on the halo and LDD implantations for the metal-oxide-semiconductor field effect transistor is investigated through the 3D atomistic device simulation. For accuracy in calculation, the kinetic monte carlo method that models individual impurity atoms and defects in the device was applied to the atomistic simulation. It is found that halo implantation has the greater influence on RDF effects than LDD implantation; three-standard deviation of $V_{TH}$ and $I_{ON}$ induced by halo implantation is about 6.45 times and 2.46 times those of LDD implantation. The distributions of $V_{TH}$ and $I_{ON}$ are also displayed in the histograms with normal distribution curves.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.9
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• pp.2183-2188
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• 2014

This paper has analyzed threshold voltage movement for channel doping concentration of asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET is generally fabricated with low doping channel and fully depleted under operation. Since impurity scattering is lessened, asymmetric DGMOSFET has the adventage that high speed operation is possible. The threshold voltage movement, one of short channel effects necessarily occurred in fine devices, is investigated for the change of channel doping concentration in asymmetric DGMOSFET. The analytical potential distribution of series form is derived from Possion's equation to obtain threshold voltage. The movement of threshold voltage is investigated for channel doping concentration with parameters of channel length, channel thickness, oxide thickness, and doping profiles. As a result, threshold voltage increases with increase of doping concentration, and that decreases with decrease of channel length. Threshold voltage increases with decrease of channel thickness and bottom gate voltage. Lastly threshold voltage increases with decrease of oxide thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1990.10a
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• pp.98-101
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• 1990

In order to investigate the laser effects resulted from the behaviors of carriers for BOPP film, experiment of TSC were carried out on the specimen with 15[$\mu\textrm{m}$] thick irradiated by He-Ne laser. The TSC spectras were observed in the temperature range of -100[$^{\circ}C$] to 130[$^{\circ}C$] with the electric field of 20∼60[MV/m], had show four of the distinguished peak such as ${\alpha}$$_1$, ${\alpha}$$_2$, ${\beta}$ and ${\gamma}$, which appeared at 115, 80, 17 and -30[$^{\circ}C$] respectively. Specially, ${\alpha}$$_1$ was observed and anomalous TSC flowing in the same direction as the charging current on the high-electric field such as 50∼60[MV/m]. In according on the consequences obtained from the studies, the origin of ${\alpha}$$_1$peak was attributed to the detrapping process form trap with 2.88[eV] deep of injected space charge from the chathode in the crystaline regions. The origin of ${\alpha}$$_2$ peak was regarded as the detrapping process of ions trapped with 0.9[eV] deep originated from impurity-ion remained in the specimen during production process of the material, in the crystalline regions. The origin of ${\beta}$ peak was concluded to be due to the depolarization process of "C=0"dipole with the activation energy of 0.75[eV] in the amorphous regions. The origin of ${\gamma}$ peak was responsible to the process combined with the depolarization of "CH$_3$", chain segment, with the activation energy of carriers from the shallow trap with 0.4[eV], in he amorphous regions.