• Progress in Superconductivity
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• v.3 no.2
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• pp.198-212
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• 2002

The effects of reacted precursors on phase evolution, microstructure, $J_{c}$ and junctional characteristic of the inter-granular contacts were investigated in Ag-sheathed T1-1223 tapes prepared using three kinds of reacted precursors, and compared to those in the tape prepared using an unreacted precursor The precursors were prepared by heat-treating a mixture of Sr-Ba-Ca-Cu-O, $Tl_2$$O_3$, PbO and $Bi_2$$O_3$ powders at $805^{\circ}C$ (precursor I ), $840^{\circ}C$ (precursor II ) and $905^{\circ}C$(precursor III) for 20 min. Tl-1223 phase content, grain size and J\ulcorner in the tapes appeared to increase in an order of precursors I, II and III Compared to tapes prepared using an unreacted precursor, the tapes prewar ed using precursors II and III revealed reduced pore and impurity densities and an enhanced texture. Also characteristic of inter -granular contacts and fraction of strong-links were improved. The improved properties are attributed to enhanced densification resulting from using the reacted precursors.s.

• Journal of Powder Materials
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• v.31 no.2
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• pp.163-168
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• 2024

As the demand for lithium-ion batteries for electric vehicles is increasing, it is important to recover valuable metals from waste lithium-ion batteries. In this study, the effects of gas flow rate and hydrogen partial pressure on hydrogen reduction of NCM-based lithium-ion battery cathode materials were investigated. As the gas flow rate and hydrogen partial pressure increased, the weight loss rate increased significantly from the beginning of the reaction due to the reduction of NiO and CoO by hydrogen. At 700 ℃ and hydrogen partial pressure above 0.5 atm, Ni and Li₂O were produced by hydrogen reduction. From the reduction product and Li recovery rate, the hydrogen reduction of NCM-based cathode materials was significantly affected by hydrogen partial pressure. The Li compounds recovered from the solution after water leaching of the reduction products were LiOH, LiOH·H₂O, and Li₂CO₃, with about 0.02 wt% Al as an impurity.

• Journal of Sensor Science and Technology
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• v.7 no.2
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• pp.131-139
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• 1998

$CdS_{0.67}Se_{0.33}$ single crystal was grown by vertical sublimation method of closed tube physical vapour deposition. The (0001) growth plane of oriented single crystals was confirmed from the back-ref1ection Laue patterns. From the Hall effects by van der Pauw method, the as-grown $CdS_{0.67}Se_{0.33}$ single crystals were found to be n-type semiconductors. The mobility appeared to be decreased by lattice scattering at temperature range from 150K to 293K and by impurity scattering at temperatures ranging from 30K to 150K In order to explore its applicability in photoconductive cells, we measured the ratio of photo-current to dark-current (pc/dc), maximum allowable power dissipation (MAPD), spectral response and response time respectively. The results indicated that for the samples annealed in Cu vapour the photoconductive characteristics are best. We obtained sensitivity of 0.99, the value of pc/de of $1.84{\times}10^{7}$, the MAPD of 323mW and the rise and decay time of 9.3 ms and 9.7 ms, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.14-15
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• 2010

Recently there has been growing interest in topological insulators or the quantum spin Hall (QSH) phase, which are insulating materials with bulk band gaps but have metallic edge states that are formed topologically and robust against any non-magnetic impurity [1]. In a three-dimensional material, the two-dimensional surface states correspond to the edge states (topological metal) and their intriguing nature in terms of electronic and spin structures have been experimentally observed in bulk Bi1-xSbx single crystals [2,3,4]. However, if we want to know the transport properties of these topological metals, high purity samples as well as very low temperature will be needed because of the contribution from bulk states or impurity effects. In a recent report, it was also shown that an intriguing coupling between the surface and bulk states will occur [5]. A simple solution to this bothersome problem is to prepare a topological metal on an ultrathin film, in which the surface-to-bulk ratio is drastically increased. Therefore in the present study, we have investigated if there is a method to make an ultrathin Bi1-xSbx film on a semiconductor substrate. From reflection high-energy electron diffraction observation, it was found that single crystal Bi1-xSbx films (0${\sim}30\;{\AA}A$ can be prepared on Si(111)-$7{\times}7$. The transport properties of such films were characterized by in situ monolithic micro four-point probes [6]. The temperature dependence of the resistivity for the x=0.1 samples was insulating when the film thickness was $240\;{\AA}A$. However, it became metallic as the thickness was reduced down to $30\;{\AA}A$, indicating surface-state dominant electrical conduction. Figure 1 shows the Fermi surface of $40\;{\AA}A$ thick Bi0.92Sb0.08 (a) and Bi0.84Sb0.16 (b) films mapped by angle-resolved photoemission spectroscopy. The basic features of the electronic structure of these surface states were shown to be the same as those found on bulk surfaces, meaning that topological metals can be prepared at the surface of an ultrathin film. The details will be given in the presentation.

• Analytical Science and Technology
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• v.35 no.3
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• pp.93-115
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• 2022

Potential impurities in pharmaceuticals could be produced during manufacture, distribution, and storage and affect quality and safety of pharmaceuticals. In particular, highly reactive impurities could result in carcinogenic (mutagenic) effects on human body. International Conference on Harmonisation (ICH) has provided M7(R1) guideline for "Assessment and Control of DNA Reactive (Mutagenic) Impurities in Pharmaceuticals to Limit Potential Carcinogenic Risk" and recommended an adoption of this guideline to the authorities. ICH M7(R1) guideline provides classification, accepted intakes, and controls of potential impurities in pharmaceuticals. However, since appropriate and unified analytical methods for impurities in pharmaceuticals have not been provided in this guideline, most potential impurities in pharmaceuticals are still difficult to manage and supervise by pharmaceutical companies and regulatory authorities, respectively. In this review, we briefly described definition of unintended mutagenic impurities, basic information in ICH M7(R1) guideline, and analytical methods to determine potential impurities. This review would be helpful to manage and supervise potential impurities in pharmaceuticals by pharmaceutical companies and regulatory authorities.

• Applied Chemistry for Engineering
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• v.26 no.6
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• pp.746-752
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• 2015

This study investigates the effects of aspect ratio (transport length-to-width) on diffusive-convection for physical vapor transport processes of $Hg_2Cl_2-NO$ system. For a system with the temperature difference of 20 K between an interface at the source material region and growing crystal interface, the linear temperature profiles at walls, the total molar fluxes at Ar = 2 are much greater than Ar = 5 as well as the corresponding nonuniformities in interfacial distributions due to the effect of convection. The maximum total molar flux at the gravitational acceleration of 1 $g_0$ is greater twice than at the level of 0.1 $g_0$, where g0 denotes the gravitational acceleration on earth. With increasing aspect ratio from 2 to 5, a diffusive-convection mode is transited into the diffusion mode, and then the strength of diffusion is predominant over the strength of diffusive-convection.

• Korean Journal of Materials Research
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• v.18 no.2
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• pp.92-97
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• 2008

In spray pyrolysis, the effects of the preparation temperature, flow rate of the carrier gas and concentration of the spray solution on characteristics such as the morphology, size, and emission intensity of $Ca_8Mg(SiO_4)_4Cl_2:Eu^{2+}$ phosphor powders under long-wavelength ultraviolet light were investigated. The phosphor powders obtained post-treatment had a range of micron sizes with regular morphologies. However, the composition, crystal structure and photoluminescence intensity of the phosphor powders were affected by the preparation conditions of the precursor powders. The $Ca_8Mg(SiO_4)_4Cl_2:Eu^{2+}$ phosphor powders prepared at temperatures that were lower and higher than $700^{\circ}C$ had low photoluminescence intensities due to deficiencies related to the of Cl component. The phosphor powders with the deficient Cl component had impurity peaks of $Ca_2SiO_4$. The optimum flow rates of the carrier gas in the preparation of the $Ca_8Mg(SiO_4)_4Cl_2:Eu^{2+}$ phosphor powders with high photoluminescence intensities and regular morphologies were between 40 and 60 l/minute. Phosphor powders prepared from a spray solution above 0.5 M had regular morphologies and high photoluminescence intensities.

• Journal of the Korean Physical Society
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• v.73 no.10
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• pp.1555-1560
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• 2018

$AlFe_2B_2$ produced by using a conventional arc melter has a ferromagnetic material with a Curie temperature ($T_C$) of around 300 K, but the arc-melt generates paramagnetic $Al_{13}Fe_4$ impurities during the synthesis of $AlFe_2B_2$. Impurities are brought to cause a decrease in magnetocaloric effects (MCEs). To investigate the effects of $Al_{13}Fe_4$ impurities on MCEs, we prepared and compared ascast and acid-treated samples, where the acid treatment was performed to remove the $Al_{13}Fe_4$ impurities. For the structural analysis, powder X-ray diffraction was carried out, and the measured data were subjected to a Rietveld refinement. The presence of $Al_{13}Fe_4$ impurities in the as-cast sample was observed in the phase analysis measurements. Magnetic properties were investigated by using Superconducting Quantum Interference Device (SQUID) measurements for the as-cast and the acid-treated $AlFe_2B_2$ samples. From isothermal magnetization measurements, Arrott plots were obtained showing that the transition of $AlFe_2B_2$ has a second-order magnetic phase transition (SOMT). The $T_C$ and the saturation magnetization increased for the acid-treated sample due to removal of the paramagnetic impurities. As a consequence, the magnetic entropy change ($-{\Delta}S$) increased in the pure $AlFe_2B_2$ samples, but the full width at half maximum in the plot of $-{\Delta}S$ vs. T decreased due to the absence of impurities.

• Progress in Superconductivity and Cryogenics
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• v.11 no.2
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• pp.7-10
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• 2009

Effects of $BaCO_3$ purity on the superconducting properties of top seeded melt growth (TSMG) processed $Y_{1+x}Ba_2Cu_3O_{7-y}$ (Y1+x, x=0.1 and 0.2) superconductors were investigated. $YBa_2Cu_3O_{7-y}$ (Y123) powder prepared using $BaCO_3$ with 99.75% purity and commercially available Y123 powder of 99.9% were used for the fabrication of single Y123 grain superconductors. $T_c$ values of the Y1+x samples prepared using low purity Y123 powder were slightly lower than those of the samples prepared using a high purity powder. In addition to the lower $T_c$, an anomalous peak effect in the intermediate magnetic fields was observed in Y1+x samples prepared using the low purity $BaCO_3$ powder. The slight decrease in $T_c$ and the anomalous peak effect are ascribed to the possible incorporation of a Y123 phase with impurity elements such as strontium and calcium included in the $BaCO_3$powder of 99.7%. The result suggests that the low purity $BaCO_3$ powder of a low price can be used as a raw power for the fabrication of single grain YBCO bulk superconductors.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.39.2-39.2
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• 2010

In this work we have investigated electrical and optical properties of interface for ITO/Si with shallow doped emitter. The ITO is prepared by DC magnetron sputter on p-type monocrystalline silicon substrate. As an experimental result, The transmittance at 640nm spectra is obtained an average transmittance over 85% in the visible range of the optical spectrum. The energy bandgap of ITO at oxygen flow from 0% to 4% obtained between 3.57eV and 3.68eV (ITO : 3.75eV). The energy bandgap of ITO is depending on the thickness, sturcture and doping concentration. Because the bandgap and position of absorption edge for degenerated semiconductor oxide are determined by two competing mechanism; i) bandgap narrowing due to electron-electron and electron-impurity effects on the valance and conduction bands (> 3.38eV), ii) bandgap widening by the Burstein-Moss effect, a blocking of the lowest states of the conduction band by excess electrons( < 4.15eV). The resistivity of ITO layer obtained about $6{\times}10^{-4}{\Omega}cm$ at 4% of oxygen flow. In case of decrease resistivity of ITO, the carrier concentration and carrier mobility of ITO film will be increased. The contact resistance of ITO/Si with shallow doped emitter was measured by the transmission line method(TLM). As an experimental result, the contact resistance was obtained $0.0705{\Omega}cm^2$ at 2% oxygen flow. It is formed ohmic-contact of interface ITO/Si substrate. The emitter series resistance of ITO/Si with shallow doped emitter was obtained $0.1821{\Omega}cm^2$. Therefore, As an PC1D simulation result, the fill factor of EWT solar cell obtained above 80%. The details will be presented in conference.