Applied Chemistry for Engineering (공업화학)

The Korean Society of Industrial and Engineering Chemistry (한국공업화학회)
권호 표지
DOI QR코드

DOI QR Code

Effects of Aspect Ratio on Diffusive-Convection During Physical Vapor Transport of Hg2Cl2 with Impurity of NO

염화제일수은과 일산화질소의 물리적 승화법 공정에서의 확산-대류에 미치는 에스펙트 비율의 영향

  • Kim, Geug-Tae (Department of Advanced Materials and Chemical Engineering, Hannam University)
  • 김극태 (한남대학교 화공신소재공학과)
  • Received : 2015.10.14
  • Accepted : 2015.11.10
  • Published : 2015.12.10
Download PDF
⟨ Previous Next ⟩

Abstract

This study investigates the effects of aspect ratio (transport length-to-width) on diffusive-convection for physical vapor transport processes of $Hg_2Cl_2-NO$ system. For a system with the temperature difference of 20 K between an interface at the source material region and growing crystal interface, the linear temperature profiles at walls, the total molar fluxes at Ar = 2 are much greater than Ar = 5 as well as the corresponding nonuniformities in interfacial distributions due to the effect of convection. The maximum total molar flux at the gravitational acceleration of 1 $g_0$ is greater twice than at the level of 0.1 $g_0$, where g0 denotes the gravitational acceleration on earth. With increasing aspect ratio from 2 to 5, a diffusive-convection mode is transited into the diffusion mode, and then the strength of diffusion is predominant over the strength of diffusive-convection.

본 연구에서는 $Hg_2Cl_2-NO$의 물리적 승화법 공정에서의 확산-대류에 미치는 에스펙트 비율(길이/폭)의 영향에 대한 것이다. 원료물질 영역과 결정영역에서의 온도 차 20 K, 벽에서의 선형 온도분포를 가진 계에서, 대류의 영향 때문에, 총몰플럭스와 상호계면에서의 비균일성에 관하여서는, 에스펙트 비율이 2인 경우가 비율이 5인 경우보다 상당히 크다. 지상중력 하에서의 최고 총몰플럭스는 지상중력의 0.1 상태에 비하여 대략 2배 정도 크다. 에스펙트 비율을 2에서 5로 증가시켰을 때, 확산-대류형이 대류형으로 전이되며, 또한 확산의 강도도 확산-대류형의 강도를 지배하게 된다.

Keywords

References

  1. N. B. Singh, M. Gottlieb, G. B. Brandt, A. M. Stewart, R. Mazelsky, and M. E. Glicksman, Growth and characterization of mercurous halide crystals: mercurous bromide system, J. Crystal Growth, 137, 155-160 (1994). https://doi.org/10.1016/0022-0248(94)91265-3
  2. N. B. Singh, R. H. Hopkins, R. Mazelsky, and J. J. Conroy, Purification and growth of mercurous chloride single crystals, J. Crystal Growth, 75, 173-180 (1986). https://doi.org/10.1016/0022-0248(86)90238-1
  3. S. J. Yosim and S. W. Mayer, The mercury-mercuric chloride system, J. Phys. Chem., 64, 909-911 (1960). https://doi.org/10.1021/j100836a023
  4. T. Yamaguchi, K. Ohtomo, S. Sato, N. Ohtani, M. Katsuno, T. Fujimoto, S. Sato, H. Tsuge, and T. Yano, Surface morphology and step instability on the (0001)C facet of physical vapor transport-grown 4H-SiC single crystal boules, J. Crystal Growth, 431, 24-31 (2015). https://doi.org/10.1016/j.jcrysgro.2015.09.002
  5. C. Ohshige, T. Takahashi, N. Ohtani, M. Katsuno, T. Fujimoto, S. Sato, H. Tsuge, T. Yano, H. Matsuhata, and M. Kitabatake, Defect formation during the initial stage of physical vapor transport growth of 4H-SiC in the (1120) direction, J. Crystal Growth, 408, 1-6 (2014). https://doi.org/10.1016/j.jcrysgro.2014.09.012
  6. J. G. Kim, J. H. Jeong, Y. Kim, Y. Makarov, and D. J. Choi, Evaluation of the change in properties caused by axial and radial Temperature gradients in silicon carbide crystal growth using the physical vapor transport method, Acta. Materialia, 77, 54-59 (2014). https://doi.org/10.1016/j.actamat.2014.06.018
  7. Y. Shi, J. Yang, H. Liu, P. Dai, B. Liu, Z. Jin, and G. Qiao, Fabrication and mechanism of 6H-type silicon carbide whiskers by physical vapor transport technique, J. Crystal Growth, 349, 68-74 (2012). https://doi.org/10.1016/j.jcrysgro.2012.03.055
  8. M. A. Fanton, Q. Li, A. Y. Polyakov, and M. Skowronski, Electrical properties and deep levels spectra of bulk SiC crystals grown by hybrid physical-chemical vapor transport method, J. Crystal Growth, 300, 314-318 (2007). https://doi.org/10.1016/j.jcrysgro.2007.01.002
  9. K. Semmelroth, M. Krieger, G. Pensl, H. Nagasawa, R. Pusche, M. Hundhausen, L. Ley, M. Nerding, and H. P. Strunk, Growth of cubic SiC single crystals by the physical vapor transport technique, J. Crystal Growth, 308, 241-246 (2007). https://doi.org/10.1016/j.jcrysgro.2007.07.060
  10. E. R. Letts, J. S. Speck, and S. Nakamura, Effect of indium on the physical vapor transport growth of AIN, J. Crystal Growth, 311, 1060-1064 (2009). https://doi.org/10.1016/j.jcrysgro.2008.12.030
  11. J. T. Mullins, F. Dierre, and B. K. Tanner, X-ray diffraction imaging of ZnTe Crystals grown by the multi-tube physical vapour transport technique, J. Crystal Growth, 431, 61-68 (2015).
  12. L. Hongtao, S. Wenbin, M. Jiahua, and Z. Feng, Purification of $Cd_{0.9}Zn_{0.1}Te$ by physical vapor transport method, Mater. Lett., 59, 3837-3840 (2005). https://doi.org/10.1016/j.matlet.2005.06.059
  13. H. Cai, W. Wang, P. Liu, G. Wang, A. Liu, Z. He, Z. Cheng, S. Zhang, and M. Xia, Enhanced synthesis of Sn nanowires with aid of Se atom via physical vapor transport, J. Crystal Growth, 420, 42-46 (2015). https://doi.org/10.1016/j.jcrysgro.2015.03.037
  14. S. Jo, S. Suzuki, and M. Yoshimura, Effect of solid-state polymerization on crystal morphology of a type of polydiacetylene single crystal obtained by physical vapor transport technique," Thin Solid Films, 554, 154-157 (2014). https://doi.org/10.1016/j.tsf.2013.05.055
  15. S. Collins, S. Vatavu, V. Evani, M. Khan, S. Bakhshi, V. Palekis, C. Rotaru, and C. Ferekides, Radiative recombination mechanisms in CdTe thin films deposited by elemental vapor transport, Thin Solid Films, 582, 139-145 (2015). https://doi.org/10.1016/j.tsf.2014.11.088
  16. S. Y. Hung, R. L. Kao, K. Y. Lin, C. C. Yang, K. S. Lin, Y. C. Chao, J. S. Wang, J. L. Shen, and K. C. Chiu, Characterization of facial and meridional $Alq_3$ thin films fabricated from physical vapor transport at high substrate temperatures, Mater. Chem. Phys., 154, 100-106 (2015). https://doi.org/10.1016/j.matchemphys.2015.01.051
  17. A. Choubey, P. Veeramani, A. T. G. Pym, J. T. Mullins, P. J. Sellin, A. W. Brinkman, I. Radley, A. Basu, and B. K. Tanner, Growth by the Multi-tube Physical Vapour Transport Method and Characterization of Bulk (Cd, Zn)Te, J. Crystal Growth, 352, 120-123 (2012). https://doi.org/10.1016/j.jcrysgro.2012.03.005
  18. Y. Shi, J. F. Yang, H. Liu, P. Dai, B. Liu, Z. Jin, G. Qiao, and H. Li, Fabrication and Mechanism of 6H-type Silicon Carbide Whiskers by Physical Vapor Transport Technique, J. Crystal Growth, 349, 68-74 (2012). https://doi.org/10.1016/j.jcrysgro.2012.03.055
  19. N. Zotov, S. Baumann, W. A. Meulenberg, and R. Vassen, La-Sr-Fe-Co Oxygen Transport Membranes on Metal Supports Deposited by Low Pressure Plasma Spraying-Physical Vapour Deposition, J. Membrane Sci., 442, 119-123 (2013). https://doi.org/10.1016/j.memsci.2013.04.016
  20. M. A. Fanton, Q. Li, A. Y. Polyakov, M. Skowronski, R. Cavalero, and R. Ray, Effects of Hydrogen on the Properties of SiC Crystals Grown by Physical Vapor Transport: Thermodynamic Considerations and Experimental Results, J. Crystal Growth, 287, 339-343 (2006). https://doi.org/10.1016/j.jcrysgro.2005.11.022
  21. C. H. Su, M. A. George, W. Palosz, S. Feth, and S. L. Lehoczky, Contactless Growth of ZnSe Single Crystals by Physical Vapor Transport, J. Crystal Growth, 213, 267-275 (2000). https://doi.org/10.1016/S0022-0248(00)00385-7
  22. C. Paorici, C. Razzetti, M. Zha, L. Zanotti, L. Carotenuto, and M. Ceglia, Physical Vapour Transport of Urotropine: One-Dimensional Model, Mater. Chem. and Phys., 66, 132-137 (2000). https://doi.org/10.1016/S0254-0584(00)00312-6
  23. A. Nadarajah, F. Rosenberger, and J. Alexander, Effects of buoyancy- driven flow and thermal boundary conditions on physical vapor transport, J. Crystal Growth, 118, 49-59 (1992). https://doi.org/10.1016/0022-0248(92)90048-N
  24. F. Rosenberger, J. Ouazzani, I. Viohl, and N. Buchan, Physical vapor transport revised, J. Crystal Growth, 171, 270-287 (1997). https://doi.org/10.1016/S0022-0248(96)00717-8
  25. P. A. Tebbe, S. K. Loyalka, and W. M. B. Duval, Finite element modeling of asymmetric and transient flowfields during physical vapor transport, Finite Elem. Anal. Des., 40, 1499-1519 (2004). https://doi.org/10.1016/j.finel.2003.09.003
  26. M. Alsaady, R. Fu, B. Li, R. Boukhanouf, and Y. Yan, Thermo-physical properties and thermo-magnetic convection of ferrofluid, Appl. Therm. Eng., 88, 14-21 (2015). https://doi.org/10.1016/j.applthermaleng.2014.09.087
  27. T. Qin, Z. Tukovic, and R. O. Grigoriev, Buoyancy-thermocapillary convection of volatile fluids under their vapors, Int. J. Heat Mass Transfer, 80, 38-49 (2015). https://doi.org/10.1016/j.ijheatmasstransfer.2014.08.068
  28. F. Rosenberger and G. Muller, Interfacial transport in crystal growth, a parameter comparison of convective effects, J. Crystal Growth, 65, 91-104 (1983). https://doi.org/10.1016/0022-0248(83)90043-X
  29. S. V. Patankar, Numerical Heat Transfer and Fluid Flow, Hemisphere Publishing Corp., Washington D. C., (1980).
  30. B. S. Jhaveri and F. Rosenberger, Expansive Convection in Vapor Transport across Horizontal Enclosures, J. Crystal Growth, 57, 57-64 (1982). https://doi.org/10.1016/0022-0248(82)90248-2
  31. G. T. Kim and M. H. Kwon, Effects of solutally dominant convection on physical vapor transport for a mixture of $Hg_2Br_2$ and $Br_2$ under microgravity environments, Korean Chem. Eng. Res., 52, 75-80 (2014). https://doi.org/10.9713/kcer.2014.52.1.75

Cited by

  1. Numerical Analysis for Impurity Effects on Diffusive-convection Flow Fields by Physical Vapor Transport under Terrestrial and Microgravity Conditions: Applications to Mercurous Chloride vol.27, pp.3, 2016, https://doi.org/10.14478/ace.2016.1028