• Title/Summary/Keyword: Impurity concentration

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Crystal Growth of Polycrystalline Silicon by Directional Solidification (일방향 응고법에 의한 단결정 Si의 결정성장에 관한 연구)

  • 김계수;이창원;홍준표
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.3 no.2
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    • pp.149-156
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    • 1993
  • Polycrystalline silicon was produced from metallurgical-grade Si by unidirectional solidification. Variations of impurity concentration and resistivity in the ingots have been investigated. X-ray diffraction analysis has also been performed to examine the crystal orientation. According to the X-ray diffraction analysis on the polycrystalline silicon, preferential orientation was changed from ( 220) into ( III ) with decreasing growth rate. Also, with increasing growth rate and fraction solidified, the resistivity tends to decrease.

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Field-domain dynamics and current self-oscillations in negative-effective-mass terahertz oscillators

  • Cao, J.C.;Qi, M.
    • Journal of the Korean Vacuum Society
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    • v.12 no.S1
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    • pp.36-39
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    • 2003
  • Field-domain dynamics and current self-oscillations are theoretically studied in quantum-well (QW) negative-effective-mass (NEM) $p^{+}pp^{+}$ diodes when the electric field is applied along the direction of the well. The origin of current self-oscillations is the formation and traveling of electric-field domains in the p-base. We have accurately considered the scattering contributions from carrier-impurity, carrier-acoustic phonon, and carrier-optic phonon. It's indicated that, both the applied bias and the doping concentration largely influence the current patterns and self-oscillating frequencies, which lie in the THz range for the NEM $p^{+}pp^{+}$ diode with a submicrometer p-base. The complicated field-domain dynamics is presented with the applied bias as the controlling parameter.

Screening and broadening effects on the mobilities for p-type Si and Ge (Screening 현상 및 broadening 현상이 p형 Si과 Ge의 이동도에 미치는 효과)

  • 전상국
    • Electrical & Electronic Materials
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    • v.10 no.6
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    • pp.581-588
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    • 1997
  • The ionization energy and degree of ionization for Si and Ge with boron doping are calculated. The hole mobilities are then calculated as a function of doping concentration using the relaxation time approximation. When the screening effect is taken into account, the reduction of ionization energy results in the increase of degree of ionization. As a result, the calculated Si mobility becomes closer to the experimental data, whereas the calculated Ge mobility is almost independent of the screening effect. The inclusion of the broadening effect in the mobility calculation overestimates the ionized impurity scattering. As compared with the experiment, the screening effect is not avoidable to calculate Si and Ge mobilities, and the broadening effect must accompany with the hopping process.

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Annealing Characteristic of Phosphorus Implanted Silicon Films using an Ion Mass Doping Method (Ion Mass Doping 법을 이용한 Phosphorus 주입된 실리콘 박막의 Annealing 특성)

  • 강창용;최덕균;주승기
    • Journal of the Korean institute of surface engineering
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    • v.27 no.4
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    • pp.234-240
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    • 1994
  • A large area impurity doping method for poly-Si TFT LCD has been developed. The advantage of this method is the doping of impurities into Si over a large area without mass separation and beam scanning. Phosphorus diluted in hydrogen was discharged by RF(13.56MHz) power and ions from discharged gas were accelerated by DC acceleration voltage and were implanted into deposited Si films. The annealing characteristic of this method was similar to that of the ion implantation method in the low doping concentration. Three mechanisms were evolved in the annealing characteristics of phosphorus doped Si films. Point defects annihilation and the retrogradation of dopant atoms at grain boundaries as a result of grain growth played a major role at low and high annealing temperature, respectively. However, due to the dopant segregation, the reverse annealing range existed at intermediate annealing temperature.

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Effects of Impurity Concentration in Channel of LDMOSFET on the Electrical Characteristics of CMOS Circuit (LDMOSFET에서 채널의 불순물 농도변화에 의한 CMOS회로의 전기적 특성)

  • Cui, Zhi-Yuan;Kim, Nam-Soo;Lee, Hyung-Gyoo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.11-12
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    • 2005
  • 2 차원 MEDICI 시뮬레이터를 이용하여 CMOS 회로의 전기적 특성을 조사하였다. CMOS 인버터 회로는 LDMOSFET를 이용하였는데, LDMOSFET에서 전류 및 스위칭 특성에 많은 영향을 주는 곳은 채널이라고 생각되는데, 채널에서의 불순물 농도 변화에 의한 CMOS 회로의 voltage transfer특성, low input voltage($V_{IL}$), high input voltage($V_{IH}$)등을 조사하였다. LDMOSFET에서 N 채널의 농도는 $V_{IL}$에, P 채널의 농도는 $V_{IH}$에 많은 영향을 주었다.

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Sensitivity analysis of thermal-hydraulic parameters to study the corrosion intensity in nuclear power plant steam generators

  • Tashakor, S.;Afsari, A.;Hashemi-Tilehnoee, M.
    • Nuclear Engineering and Technology
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    • v.51 no.2
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    • pp.394-401
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    • 2019
  • The failure of steam generators (SGs) due to corrosion is one of the most important problems in power plants. Impurities usually accumulate in the hot sides of SG and form deposits on the SG surfaces. In this paper, the sensitivity analysis of the accumulation of water impurities in the heat exchangers of nuclear power plants is presented. The convection-diffusion equation of the liquid phase on the heated surfaces is derived and then solved by the finite volume method. Also, the effects of the thermal-hydraulic parameters in the form of dimensionless numbers, such as $Pe_q$, $Pe_u$, $k_q$(relative solubility of impurity between the steam and water) on the impurities concentration are studied.

Color manipulation of silica aerogel by copper incorporation during sol-gel process

  • Lee, Sang-Seok;Park, Il-Kyu
    • Journal of Ceramic Processing Research
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    • v.20 no.1
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    • pp.30-34
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    • 2019
  • Copper (Cu)-incorporated silica aerogel was synthesized by a sol-gel process with two-step drying process for color modification. The microstructure of the silica aerogel was not affected significantly by the Cu concentration and an amorphous structure was maintained without any crystalline impurity phases. The textural properties of the silica aerogels investigated by using N2 adsorption-desorption isotherms exhibited the typical features of mesoporous materials. The pore size and porosity were not changed significantly even with the incorporation of Cu up to 1.5 M, which indicates negligible variation of thermal insulating properties. However, the color of the aerogel changed from white and light greenish to dark greenish with increasing Cu content. The color change of the silica aerogel was due to the modification of the electron energy band structure of silica by the Cu atomic levels. Therefore, the color of the silica aerogel powders could be manipulated by incorporating Cu without degrading the thermal insulating properties.

Purification of p-Dioxanone from p-Dioxanone and Diethylene Glycol Mixture by a Layer Melt Crystallization (경막형 용융결정화에 의한 파라디옥사논과 디에틸렌글리콜 혼합물로부터 파라디옥사논의 정제)

  • Kim, Sung-Il;Kim, Chul-Ung;Park, So-Jin
    • Korean Chemical Engineering Research
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    • v.43 no.5
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    • pp.595-602
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    • 2005
  • In order to purify diethylene glycol as main impurity included in p-dioxanone, SLE (solid-liquid equilibria) and mixture density on two components system of p-dioxanone and diethylene glycol were measured and a layered melt crystallization with seed has been applied. The SLE of p-dioxanone and diethylene glycol were a simple eutectic system and the temperature and PDX concentration at eutectic point were 0.08 and 246 K, respectively. Densities of their binary mixtures were well fitted by the best correlation equation, ${\rho}_l=0.405+1.361x+0.002T-0.004xT$. In the melt crystallization, the growth rate (G) was proportional to the 1.5th power of the subcooling degree. The effective distribution coefficient ($K_{eff}$) as the degree of impurity removal was observed to increase with increasing the growth rate and initial p-dioxanone concentration. And also, $K_{eff}$ was correlated with Z function using Wintermantel's model such as $K_{eef}=-0.0604+6.392{\times}Z$. Finally, PDX purity through the optimization of this process can be obtained over 99%.

Theoretical Analysis and Effect of Condenser In-leakage in the Secondary Systems of YGN-1, 2 (영광-1, 2호기 2차계통 복수기누설의 이론적 분석 및 영향평가)

  • Suk, Tae-Won;Lee, Yong-Woo;Kim, Hong-Tae;Park, Sang-Hoon
    • Nuclear Engineering and Technology
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    • v.23 no.3
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    • pp.299-305
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    • 1991
  • Corrosive environment may be generated within steam generators from condenser cooling water in-leakage. Theoretical analysis of the accumulation of chloride as a sea water impurity is being carried out for the condenser cooling water used at YGN-1,2 nuclear power stations. Calculations have shown that highly concentrated chloride solution would be produced within the steam generators in the case of sea water in-leakage. Maximum allowable design condenser leak rate(0.5 gpm) leads chloride concentration of 2.3 ppm at steam generetor and 0.6 ppm at hotwell with the maximum blowdown rate and condensate purification. Concentration factor at steam generator is dependent only on both blowdoum rate and condensate purification efficiency as follows, Concentration Factor(equation omitted)(B$\neq$O) Blowdown and condensate purification are evaluated as the only effective measures to remove impurities from the secondary systems.

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Degradation of MEA and Characteristics of Outlet Water According to Operation Condition in PEMFC (고분자 전해질 연료전지 구동 조건에 따른 MEA 열화 및 배출수 특성)

  • Hwang, Byungchan;Lee, Sehoon;Na, Il-Chai;Park, Kwonpil
    • Korean Chemical Engineering Research
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    • v.55 no.4
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    • pp.478-482
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    • 2017
  • Humidity control of proton exchange membrane fuel cell(PEMFC) is very important control condition during driving. In terms of water management, low humidification conditions are advantageous, and high humidification is advantageous in terms of drainage utilization and energy efficiency. In this study, the characteristics of outlet water in low humidification and high humidification process were studied in terms of utilization of discharged water. Since the impurities in the effluent are generated during the degradation of the membrane and the electrode assembly(MEA), degradation of the MEA under low humidification and high humidification conditions was also studied. The rate of radical generation was high at low humidification condition of the anode RH 0%, which showed that it was the main cause of the degradation of the polymer membrane. Analysis of effluent showed low concentration of fluoride ion concentration of about 20 ppb at high humidification (both electrodes RH 100%) and 0.6 V, which was enough to be used as the feed water for electrolysis. Very low concentration of platinum below 0.2 ppb was detected in the condensate discharged from the high humidification condition.