• 제목/요약/키워드: Imprint Lithography

검색결과 121건 처리시간 0.023초

Thermal NIL 용 스탬프 공정 수명에 관한 연구 (A Study on Stamp Process Life Time in Thermal NIL)

  • 조천수;이문재;오지인;임오강;정명영
    • 한국정밀공학회지
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    • 제28권2호
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    • pp.239-244
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    • 2011
  • Nano Imprint Lithography(NIL) is technique for copying a pattern from stamp with nano size pattern in order to replicated the materials. It is very important to demold in order to make NIL process effectively. Self Assembled Monolayers(SAM) coater is manufactured by means of decreasing surface energy with the stamp surface treatment to improve release characteristics. Manufactured device contains tilting and rotation option for increasing process life time by coating on the sidewall of the pattern in stamp. The stamp coated with optimized tilting angle $30^{\circ}$ and rotation speed of 10rpm has more imprinting cycles than the stamping coated without tilting and rotation. Effective SAM coating on the sidewall of the pattern in stamp will improve by 50% of process life time.

나노임프린트 리소그래피 적용을 위한 CHF3 플라즈마를 이용한 실리콘 몰드 표면 처리 특성 (A Study of the Silicon Mold Surface Treatment Using CHF3 Plasma for Nano Imprint Lithography)

  • 김용근;김재현;유반석;장지수;권광호
    • 한국전기전자재료학회논문지
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    • 제24권10호
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    • pp.790-793
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    • 2011
  • In this study, the surface modification for a silicon(Si) mold using $CHF_3$ inductively coupled plasma(ICP). The conditions under that plasma was treated a input ICP power 600 W, an operating gas pressure of 10 mTorr and plasma exposure time of 30 sec. The Si mold surface became hydrophobic after plasma treatment in order to $CF_x$(X= 1,2,3) polymer. However, as the de-molding process repeated, it was investigated that the contact angle of Si surface was decreased. So, we attempted to investigate the degradation mechanism of the accurate pattern transfer with increasing the count of the de-molding process using scanning electron microscope (SEM), contact angle, and x-ray photoelectron spectroscopy (XPS) analysis of Si mold surface.

열 나노임프린트 공정에서 가압조건이 패턴전사에 미치는 영향 (Effects of Pressurization Conditions on the Pattern Transfer in the Thermal Nanoimprint Lithography)

  • 이우영;이기연;김국원
    • 반도체디스플레이기술학회지
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    • 제12권4호
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    • pp.15-20
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    • 2013
  • Nanoimprint lithography (NIL) is the next generation photolithography process in which the photoresist is dispensed onto the substrate in its liquid form and then imprinted and cured into a desired pattern instead of using traditional optical system. There have been considerable attentions on NIL due to its potential abilities that enable cost-effective and high-throughput nanofabrication to the display device and semiconductor industry. In this paper, a pressure vessel type imprinting system was used to imprint patterns with two type pressure values (25 bar, 30 bar) and two type pressure keeping times (5 min, 10 min). The height of transferred pattern and the thickness of residual layer were measured and effects of pressurization conditions - pressure and pressure keeping time - on the pattern transfer in thermal NIL were investigated.

Numerical Analysis of Pressure and Temperature Effects on Residual Layer Formation in Thermal Nanoimprint Lithography

  • Lee, Ki Yeon;Kim, Kug Weon
    • 반도체디스플레이기술학회지
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    • 제12권2호
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    • pp.93-98
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    • 2013
  • Nanoimprint lithography (NIL) is a next generation technology for fabrication of micrometer and nanometer scale patterns. There have been considerable attentions on NIL due to its potential abilities that enable cost-effective and high-throughput nanofabrication to the display device and semiconductor industry. To successfully imprint a nanosized pattern with the thermal NIL, the process conditions such as temperature and pressure should be appropriately selected. This starts with a clear understanding of polymer material behavior during the thermal NIL process. In this paper, a filling process of the polymer resist into nanometer scale cavities during the thermal NIL at the temperature range, where the polymer resist shows the viscoelastic behaviors with consideration of stress relaxation effect of the polymer. In the simulation, the filling process and the residual layer formation are numerically investigated. And the effects of pressure and temperature on NIL process, specially the residual layer formation are discussed.

A Numerical Analysis of Polymer Flow in Thermal Nanoimprint Lithography

  • Kim, Nam-Woong;Kim, Kug-Weon;Lee, Woo-Young
    • 반도체디스플레이기술학회지
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    • 제9권3호
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    • pp.29-34
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    • 2010
  • Nanoimprint lithography (NIL) is an emerging technology enabling cost effective and high throughput nanofabrication. To successfully imprint a nanometer scale patterns, the understanding of the mechanism in nanoimprint forming is essential. In this paper, a numerical analysis of polymer flow in thermal NIL was performed. First, a finite element model of the periodic mold structure with prescribed boundary conditions was established. Then, the volume of fluid (VOF) and grid deformation method were utilized to calculate the free surfaces of the polymer flow based on an Eulerian grid system. From the simulation, the velocity fields and the imprinting pressure for constant imprinting velocity in thermal NIL were obtained. The velocity field is significant because it can directly describe the mode of the polymer deformation, which is the key role to determine the mechanism of nanoimprint forming. Effects of different mold shapes and various thicknesses of polymer resist were also investigated.

광소자의 광 정렬 및 연결 구조 구현용 임프린트 공정 연구 (A Study on the Imprinting Process for an Optical Interconnection of PLC Device)

  • 김영섭;조상욱;강호주;정명영
    • 한국정밀공학회지
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    • 제29권12호
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    • pp.1376-1381
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    • 2012
  • Optical devices are used extensively in the field of information network. Increasing demand for optical device, optical interconnection has been a important issue for commercialization. However many problems exist in the interconnection between optical device and optical fiber, and in the case of the multi-channel, problems of the optical alignment and optical array arise. For solving the alignment and array problem of optical device and the optical fiber, we fabricated fiber alignment and array by using imprint technology. Achieved higher precision of optical fiber alignment and array due to fabricating using imprint technology. The silicon stamp with different depth was fabricated using the conventional photolithography. Using the silicon stamp, a nickel stamp was fabricated by electroforming process. We conducted imprint process using the nickel stamp with different depth. The optical alignment and array by fabricating the patterns of optical device and fiber alignment and array using imprint process, and achieved higher precision of decreasing the dimensional error of the patterns by optimization of process. The fabricated optical interconnection of PLC device was measured 3.9 dB and 4.2 dB, lower than criteria specified by international standard.

나노임프린트 리소그래피 기술을 이용한 그래핀 나노리본 트랜지스터 제조 및 그래핀 전극을 활용한 실리콘 트랜지스터 응용 (Facile Fabrication Process for Graphene Nanoribbon Using Nano-Imprint Lithography(NIL) and Application of Graphene Pattern on Flexible Substrate by Transfer Printing of Silicon Membrane)

  • 엄성운;강석희;홍석원
    • 한국재료학회지
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    • 제26권11호
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    • pp.635-643
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    • 2016
  • Graphene has shown exceptional properties for high performance devices due to its high carrier mobility. Of particular interest is the potential use of graphene nanoribbons as field-effect transistors. Herein, we introduce a facile approach to the fabrication of graphene nanoribbon (GNR) arrays with ~200 nm width using nanoimprint lithography (NIL), which is a simple and robust method for patterning with high fidelity over a large area. To realize a 2D material-based device, we integrated the graphene nanoribbon arrays in field effect transistors (GNR-FETs) using conventional lithography and metallization on highly-doped $Si/SiO_2$ substrate. Consequently, we observed an enhancement of the performance of the GNR-transistors compared to that of the micro-ribbon graphene transistors. Besides this, using a transfer printing process on a flexible polymeric substrate, we demonstrated graphene-silicon junction structures that use CVD grown graphene as flexible electrodes for Si based transistors.

나노 임프린트 공정에서의 기계적 물성 측정 (Mechanical Property Measurement in Nano Imprint Process)

  • 김재현;이학주;최병익;강재윤;오충석
    • 한국정밀공학회지
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    • 제21권6호
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    • pp.7-14
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    • 2004
  • 나노 임프린트 기술은 기존의 광학적 리소그라피 (optical lithography) 기술보다 저렴한 비용으로 나노 구조물을 대량으로 제조할 수 있을 것으로 기대되고 있는 기술이다. 현재까지 반도체 공정기술의 주류를 이루고 있는 광학적인 리소그라피 기술은, 100nm이상의 CD(Critical Dimension)를 가지는 구조물들을 정밀하게 제조하여, 미소전자공학 (microelectronics) 소자, MEMS/MEMS, 광학소자 등의 제품들을 대량으로 생산하는 데에 널리 활용되고 있다. 반도체 소자의 고집적화 경향에 따라 100 nm 이하의 CD를 가지는 나노 구조물들을 제조할 필요성이 높아지고 있지만, 광학적인 방법으로는 광원의 파장보다 작은 구조물들을 제조하기가 어렵다. 보다 짧은 파장을 가지는 광원을 이용하는 리소그라피 장비가 계속적으로 개발되고 있으나, 그에 따른 장비 비용 및 제조 단가가 기하급수적으로 증가하고 있다.(중략)

PERC 태양전지 모듈의 출력저하 방지를 위한 모스아이(Moth-eye) 광학필름 연구 (A Study of Moth-eye Nano Structure Embedded Optical Film with Mitigated Output Power Loss in PERC Photovoltaic Modules)

  • 오경석;박지원;최진영;천성일
    • 마이크로전자및패키징학회지
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    • 제27권4호
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    • pp.55-60
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    • 2020
  • 태양광 발전소에 설치된PERC 태양광 모듈 스트링-어레이는 고전압의 전위차로 인해 여전히 potential-induced degradation(PID) 열화 현상이 여전히 보고되고 있다. 이는 태양전지 모듈 커버글라스의 Na+ 이온이 태양전지 봉지재(EVA)를 투과하여 셀 표면으로 전이되고 결함이 많이 분포되어 있는 ARC(SiOx/SiNx) 계면에 양전하가 축적됨으로써 shunt-Resistance(Rsh)가 감소되고 누설전류량이 증가되어 태양전지 출력이 저하되는 현상이다. 본 연구에서는 이를 방지하기 위해 나노임프린트 리소그래피(nano-imprint lithography, NIL) 방식을 이용하여 모스아이(Moth-eye) 나노 구조를 광학 필름 후면에 증착 하였고, 이를 커버글라스와 EVA 사이에 삽입하여 태양광 미니 모듈을 구성하였다. PID 열화 현상을 확인하기 위해 IEC 62804-1 규격에 기반한 셀 단위 PID 열화가속시험을 진행하였고, Light I-V, Dark I-V 분석을 통해 출력(Pmax), 효율(Efficiency), 병렬 저항(shunt resistance)을 확인하였다. 그 결과 기존의 태양전지는 초기 효율 19.76%에서 6.3% 감소하였으나 모스아이 나노 구조 광학 필름(Moth-eye film)이 적용된 태양전지는 0.6% 만 감소하여 PID 열화 현상이 방지되는 것을 확인하였고, 모스아이 나노구조를 통해 투과도가 4% 향상되어 미니 모듈 출력이 2.5% 향상되었다.