• Proceedings of the IEEK Conference
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• 2004.06a
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• pp.225-228
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• 2004

This paper has been studied about UWB(Ulra wide-band)'s LNA(Low Noise Amplifier) and Mixer. The UWB is a new technology that is being pursed for both commercial and military purposes. Direct conversion architectures that convert RF signals have potential to achieve such terminals, because they eliminate the need for non-programmable image-rejection filters and IF channel filters. And this architecture promises better performance in power, size, and cost than existing heterodyne - based receivers. This Receiver architectures combines low-noise amplifier, mixer. And then this paper has designed suitable UWB's LNA and Mixer.

• Proceedings of the KIEE Conference
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• 2003.11c
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• pp.894-897
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• 2003

Recently, the rapid growth of mobile radio system has led to an increasing demand of low-cost high performance communication IC's. In this paper, we have designed RF front end for wireless LAN receiver employ zero-IF architecture. A low-noise amplifier (LNA) and double-balanced mixer is included in a front end. The zero-IF architecture is easy to integrate and good for low power consumption, so that is coincided to requirement of wireless LAN. But the zero-IF architecture has a serious problem of large offset. Image-reject mixer is a good structure to solve offset problem. Using offset compensation circuit is good structure, too. The front end is implemented in 0.25 ${\mu}m$ CMOS technology. The front end has a noise figure of 5.6 dB, a power consumption of 16 mW and total gain of 22 dB.

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.5
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• pp.123-127
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• 2017

This paper fabricated and analyzed the image rejection mixer that uses FET's channel resistance. It can be applied for capacity 64QAM that has 50MHz~90MHz of IF band, 8.17GHz of LO frequency and 8.08~8.12GHz of RF band. When IF input power is -20dBm and LO input power is 10dBm, RF output power is obtained -33.2dBm. In this case, conversion loss is 12.9dB, the suppression of 14.3dB for LO frequency and 10.4dB for image frequency. The result of two tone test shows great IMD characteristics with 51.7dBc.

• Proceedings of the IEEK Conference
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• 2001.06a
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• pp.429-432
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• 2001

본 논문에서는 Cascode FETs 구조를 능동필터로 동작시켜 이미지제거 특성을 분석하였으며, Cascode형 자기발진 믹서를 설계하였다. Ku-band 대역에서 모의실험 결과 Cas code FETs형 자기발진믹서에서 이미지성분이 -254Bc 개선되었으며, Single FET형 자기발진믹서와 비교해서 -23dBc 이상 개선됨을 확인할 수 있었다.

• ETRI Journal
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• v.42 no.4
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• pp.549-561
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• 2020

We developed a 0.1-㎛ metamorphic high electron mobility transistor and fabricated a W-band monolithic microwave integrated circuit chipset with our in-house technology to verify the performance and usability of the developed technology. The DC characteristics were a drain current density of 747 mA/mm and a maximum transconductance of 1.354 S/mm; the RF characteristics were a cutoff frequency of 210 GHz and a maximum oscillation frequency of 252 GHz. A frequency multiplier was developed to increase the frequency of the input signal. The fabricated multiplier showed high output values (more than 0 dBm) in the 94 GHz-108 GHz band and achieved excellent spurious suppression. A low-noise amplifier (LNA) with a four-stage single-ended architecture using a common-source stage was also developed. This LNA achieved a gain of 20 dB in a band between 83 GHz and 110 GHz and a noise figure lower than 3.8 dB with a frequency of 94 GHz. A W-band image-rejection mixer (IRM) with an external off-chip coupler was also designed. The IRM provided a conversion gain of 13 dB-17 dB for RF frequencies of 80 GHz-110 GHz and image-rejection ratios of 17 dB-19 dB for RF frequencies of 93 GHz-100 GHz.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.37 no.7A
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• pp.545-551
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• 2012

In this paper, K-band multi-channel receiver was designed and fabricated for low noise amplification and down conversion to L-band. The fabricated multi-channel receiver incorporates GaAs-HEMT LNA(Low noise amplifier) which provides less than a 2 dB noise figure, IR(Image Rejection) Filter for rejection of image frequency, IR(Image rejection) mixer to reject a image frequency and improve an IMD(Intermodulation Distortion) characteristic. Test results of the fabricated multi-channel receiver show less than a 3.8 dB noise figure, conversion gain of more than 27dB, and IP1dB(Input 1dB Gain Compression Point) of -9.5 dB and over.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.23 no.5
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• pp.109-114
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• 2023

In this paper, a 2-channel Image-Reject receiver using a 65-nm CMOS process is presented for Ka-band compact radars. The designed receiver consists of Low-Noise Amplifier (LNA), IQ mixer, and Analog Baseband (ABB). ABB includes a complex filter in order to suppress unwanted images, and the variable gain amplifiers (VGAs) in RF block and ABB have gain tuning range from 4.5-56 dB for wide dynamic range. The gain of the receiver is controlled by on-chip SPI controllers. The receiver has noise figure of <15 dB, OP1dB of >4 dBm, image rejection ratio of >30 dB, and channel isolation of >45 dB at the voltage gain of 36 dB, in the Ka-band target frequency. The receiver consumes 420 mA at 1.2 V supply with die area of 4000×1600 ㎛.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.10
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• pp.1169-1176
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• 2010

The RF front-end for L1/L2 dual-band Global Positioning System(GPS) receiver is presented in this paper. The RF front-end(down-converter) using low IF architecture consists of a wideband low noise amplifier(LNA), a current mode logic(CML) frequency divider and a I/Q down-conversion mixer with a poly-phase filter for image rejection. The current bleeding technique is used in the LNA and mixer to obtain the high gain and solve the head-room problem. The common drain feedback is adopted for low noise amplifier to achieve the wideband input matching without inductors. The fabricated RF front-end using $0.18{\mu}m$ CMOS process shows a gain of 38 dB for L1 and 41 dB for L2 band. The measured IIP3 is -29 dBm in L1 band and -33 dBm in L2 band, The input return loss is less than -10 dB from 50 MHz to 3 GHz. The measured noise figure(NF) is 3.81 dB for L1 band and 3.71 dB for L2 band. The image rejection ratio is 36.5 dB. The chip size of RF front end is $1.2{\times}1.35mm^2$.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.39A no.12
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• pp.691-698
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• 2014

An L-band single side band(SSB) mixer with CMOS switches and a C-band quadrature voltage-controlled oscillator(QVCO) have been developed using the TowerJazz 0.18-um RFCMOS process. The SSB mixer exhibits a conversion gain of 6.6 ~ 7.5 dB with a 70-dBc image rejection ratio and 65-dBc port isolation. The oscillation frequency range of the QVCO is 6.2 ~ 6.7 GHz with an output power of 4~6 dBm. For measurement, 1.8 V supply voltage is used while drawing 36 mA for the mixer and 23 mA for the QVCO.

• Publications of The Korean Astronomical Society
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• v.27 no.3
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• pp.71-80
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• 2012

We have developed superconducting mixer receivers for 129 GHz VLBI observation in Korean VLBI Network (KVN). The developed mixer has a radial waveguide probe with simple transmission line L-C transformer as a tuning circuit to its 5 series-connected junctions, which can have 125 - 165 GHz as the operation radio frequency (RF). For intermediate frequency (IF) signal path a high impedance quarter-wavelength line connects the probe to one end of symmetric RF chokes. The double side band (DSB) receiver noise of the mixer was about 40 K over 4 - 6 GHz IF band, whereas we achieved the uncorrected single side band (SSB) noise temperature of about 70 K and better than 10 dB image rejection ratio in 2SB configuration with 8 - 10 GHz IF band. Insert-type receiver cartridges employing the mixers have been under commission for KVN stations.