• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.373-374
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• 2007

We have fabricated polymer light-emitting diodes(PLED) in a structure of Glass/ITO/PVK/Al. Poly(N-vinylcabazole) (PVK) was deposited on the ITO glass with the spin coating method. PVK thickness is respectively 500nm, 300nm, 250nm and 200nm with the spin coter rotation speed of 2000, 3000, 4000 and 5000rpm. V-I, wavelength-transmittance, P-L and SEM of the fabricated devices were measured. From the result of P-L measurement, it was kept the optic properties of PVK raw powder when PVK thickness is 250nm. The knee-voltage of PVK PLED with 250nm thickness was 7V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.04a
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• pp.83-84
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• 2006

ITO/4, 4', 4"-tris (N -3 - methylphenyl - N - phenyl - amino) - triphenylamine, [m-MTDATA] / Terbium Iris - (1 - phenyl - 3 - methyl - 4 - (tertiarybutyryl) - pyrazol - 5 - one) triphenylphosphine oxide [$(tb-PMP)_3Tb-(Ph_3PO)$] / Mg:Ag devices were made to investigate its electrical and light emission properties. The thickness of m-MTOATA layer was varied from 0 to 80 nm. There was a threshold thickness for the sufficient hole injection. The insertion of 20 nm thick m-MTDATA layer between ITO and Tb-complex resulted in the right shift of current-voltage curve because of the insufficient hole injection. The low operating voltage can be obtained above the 40 nm of m-MTDATA layer. The insertion of m-MTDATA induced the increase of the background in the electroluminescence spectrum which was dependent on the current density of the devices.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.742-745
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• 2004

A profitable mass production of Organic Light Emitting Diode (OLED) displays needs a new type of manufacturing equipment. We have developed a vertical In-Line machine (VES400) equipped with linear etch sources (e.g. to activate an ITO layer), standard magnetron sputter sources for ITO and metal and linear evaporation sources for the organic and metal materials. We present new results concerning the linear evaporation sources for organic materials. We have optimized the vertical thickness non uniformity for the evaporation of different organic materials and achieved deviations of less than ${\pm}$ 5 % for the vertical thickness over a substrate height of 400 mm. We will further report first results about the long term stability of the deposition rate for different organic materials using rate control..

• Journal of Korean Ophthalmic Optics Society
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• v.7 no.2
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• pp.155-161
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• 2002

We studied the formation of nickel nano thin film that have various electrochromic properties. Nickel thin film having various thickness will apply photoelectronic devices, specially, electrochromic devices. These devices will apply lens, battery, glass and solar cell that have light, thin, simple and small that applied nanotechnology and quantum dot. Nickel thin film was coated by electrochemical method on ITO electrode. We studied the thin film properties by Cyclic voltammetry, Chronoamperometry. Impedance. X-ray diffraction analysis and Atomic force microscopy.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.94.2-94.2
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• 2010

Indium tin oxide (ITO) Thin films were grown on Non-alkarai glass Substrates by PVD method and Subsequently Subjected to ($100^{\circ}C-350^{\circ}C$) Thermal Annealing (TA) In Nitr Oxygen ambinent. Most of all, The effect of TA treatment on the structural properties were studied by using X-Ray diffraction and atomic force microscopy, while optical properties were studied by UV-Transmittance measurements. After TA treatment, the XRD spectra have shown an effective relaxation of the residual compressive stress, As a result, XRD peaks increase of the intensity and narrowing of full width at half-maximun (FWHM). In addtion The microstructure, The surface morphology, the optical transmittance changed and improved, and we investigated The effects of temperature, Time and atmosphere during the TA on the structural and electrical properties of the ITO/glass on TA at $300^{\circ}C$. As a results, the films are highly transparent (80%～89%) in visible region. AFM analysis shows that the films are very smooth with root mean square surface roughness 0.58nm -2.75nm thickness film. It is observed that resistivity of the films drcreases T0 $1.05{\times}10^{-4}{\Omega}cmt$ $6.06{\times}10^{-4}{\Omega}cm$, while mobility increases from $152cm^2/vs$ to $275cm^2/vs$.

• Transactions on Electrical and Electronic Materials
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• v.10 no.5
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• pp.169-172
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• 2009

The ZnO/CuSn/ZnO (ZCSZ) multilayer films were deposited on polycarbonate substrates using reactive RF and DC magnetron sputtering. The thickness of each layer was 50 nm/5 nm/45 nm, respectively. The ZCSZ films showed a sheet resistance of $44{\Omega}$/Sq, which was an order of magnitude lower than that indium tin oxide (ITO) films. Although the ZCSZ films had a CuSn interlayer that absorbed visible light, both films had similar optical transmittances of 74% in the visible wavelength region. The figure of merit of the ZCSZ films was $1.0{\times}10^{-3}{\Omega}^{-1}$ and was greater than the value of the ITO films, $1.6{\times}10^{-4}{\Omega}^{-1}$. From the X-ray diffraction (XRD) analysis, the ITO films did not show any diffraction peaks, whereas the ZCSZ films showed diffraction peaks for the ZnO (100) and (002) phases. The hardness of the ITO and ZCSZ films were 5.8 and 7.1 GPa, respectively, which were determined using nano-indentation. From these results, the ZCSZ films exhibited greater optoelectrical performance and hardness compared to the conventional ITO films.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.6
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• pp.1465-1468
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• 2010

The wet etching is a process using chemical solution and occurring chemical reaction on substrate surface. when we do wet etching process, we have to consider stoichiometry, etching time and temperature of etchant for good resolution. In this experiment, we used Cr, Al andIndium-tin-oxide (ITO) metal and we deposited them with DC sputtering machine. The Cr thin film metal thickness is about $1300{\AA}$, ITO films show a low electrical resistance and high transmittance in the visible range of an optical spectrum and Ai film is used for signal line. We measured and analysed wet etching properties on the metal thin films.

• Solar Energy
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• v.19 no.3
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• pp.125-131
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• 1999

This paper deals with a novel structure of poly-Si solar cell. A grain boundary(GB) of poly-Si acts as potential barrier and recombination center for photo-generated carriers. To reduce unwanted side effects at the GB of poly-Si, we employed physical GB removal of poly-Si using chemical solutions. Various chemical etchants such as Sirtl, Yang, Secco, and Schimmel were investigated for the preferential GB etching. Etch depth about 10 ${\mu}m$ was achieved by a Schimmel etchant. After a chemical etching of poly-Si, we used $POCl_3$ for emitter junction formation. This paper used an easy method of top electrode formation using a RF sputter grown ITO film. ITO films with thickness of 300 nm showed resistivity of $1.26{\times}10^{-4}{\Omega}-cm$ and overall transmittance above 80%. Using a preferential GB etching and ITO top electrode, we developed a new fabrication procedure of poly-Si solar cells. Employing optimized process conditions, we were able to achieve conversion efficiency as high as 16.6% at an input power of 20 $mW/cm^2$. This paper investigates the effects of process parameters: etching conditions, ITO deposition factors, and emitter doping densities in a poly-Si cell fabrication procedure.

• Journal of the Korean Vacuum Society
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• v.9 no.1
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• pp.30-35
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• 2000

Indium-Tin Oxide (ITO) thin films were deposited on the commercial glass substrate by rf-magnetron sputtering. The ITO films with the thickness of 2,000~2,400 $\AA$ were prepared by changing the oxygen partial pressures of 2, 3, and 5%, as well as by changing the substrate temperature of $300^{\circ}C$ and $500^{\circ}C$. spectrophotometer, XRD, SEM, AFM, 4-point probe and Hall effect system were employed to characterize the ITO films. The optimum deposition conditions were the substrate temperature of $500^{\circ}C$ and oxygen partial pressure of 2-3%. At theses conditions, the ITO film showed the transmittance of 91%, the resistivity of $5.4\times10^{-3}\Omega$cm, the carrier concentration of $1.0\times10^{19}\textrm{cm}^{-3}$, and the carrier mobility of 150$\textrm{cm}^2$/Vsec. In XRD spectra, the (222) and (400) $In_2O_3$ planes were dominant under the optimum deposition conditions When the substrate was cleaned only by the method of ultrasonic cleaning without both pre-annealing and chemical treatment of the substrate, the ITO film exhibited the transmittance of 86%, the carrier concentration of $5.4\times10^{19}\textrm{cm}^{-3}$ and the mobility of 24$\textrm{cm}^2$/Vsec.

• Journal of Sensor Science and Technology
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• v.4 no.2
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• pp.51-57
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• 1995

Indium Tin Oxide (ITO) thin films have been fabricated by the rf magnetron sputtering technique with a target of a mixture $In_{2}O_{3}$ (90mol%) and $SnO_{2}$ (10mol%). We prepared ITO thin films with substrate temperature 100, 200, 300, 400, $500^{\circ}C$ and post-annealing temperature 300, 400, $500^{\circ}C$. And we analyzed X -ray diffraction patterns, electrical properties, transmission spectra and SEM photographs. As a result, the crystallinity, electrical conductivity and transmittance of ITO thin films were improved with increasing substrate temperature. But, as increasing post-annealing temperature in air, conductivity of the film was decreased. When the ITO thin film was fabricated with substrate temperature of $500^{\circ}C$ and thickness of $3000{\AA}$, its resistivity and transmittance were about $2{\times}10^{-4}{\Omega}cm$ and 85% or more, respectively.