Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2007.11a
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- Pages.373-374
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- 2007
Optical and Conduction Properties with the Thickness Variation of the Light-emitting Layer in PVK-Based PLED
PVK계 PLED에서 발광층의 두께 변화에 따른 광학 및 전도 특성
- Jang, Kyung-Uk (Kyungwon Univ.) ;
- Ahn, Hee-Cheul (Hongik Univ.) ;
- Shin, Eun-Cheul (Hongik Univ.) ;
- Lee, Eun-Hye (Hongik Univ.) ;
- Yoon, Hee-Myung (Hongik Univ.) ;
- Chung, Dong-Hoe (Kwangwoon Univ.) ;
- Ahn, Joon-Ho (Hongik Univ.) ;
- Lee, Won-Jae (Kyungwon Univ.) ;
-
Kim, Tae-Wan
(Hongik Univ.)
- 장경욱 (경원대학교) ;
- 안희철 (홍익대학교) ;
- 신은철 (홍익대학교) ;
- 이은혜 (홍익대학교) ;
- 윤희명 (홍익대학교) ;
- 정동회 (광운대학교) ;
- 안준호 (홍익대학교) ;
- 이원재 (경원대학교) ;
-
김태완
(홍익대학교)
- Published : 2007.11.01
Abstract
We have fabricated polymer light-emitting diodes(PLED) in a structure of Glass/ITO/PVK/Al. Poly(N-vinylcabazole) (PVK) was deposited on the ITO glass with the spin coating method. PVK thickness is respectively 500nm, 300nm, 250nm and 200nm with the spin coter rotation speed of 2000, 3000, 4000 and 5000rpm. V-I, wavelength-transmittance, P-L and SEM of the fabricated devices were measured. From the result of P-L measurement, it was kept the optic properties of PVK raw powder when PVK thickness is 250nm. The knee-voltage of PVK PLED with 250nm thickness was 7V.