• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1361-1363
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• 2005

In this paper, we report on the performance stability of solution processible OTFT devices with Au/Ti and ITO source-drain (S/D) electrodes. It appears that the contact resistance of the S/D electrode strongly affects the stability of OTFT devices. Interestingly, the devices with the Au/Ti electrode showed lower mobility than those with the ITO (S/D) devices. The field effect mobilities of the devices with the Au/Ti and ITO electrodes were 0.06, and $0.44cm^2/Vs$, respectively. However, the mobility of the device with the Au/Ti electrode was increased up to $0.26cm^2/Vs$ after 2 weeks, while the mobility of the device with ITO electrode was slightly decreased down to $0.41cm^2/Vs$. The experimental data show us that ITO could be used as the S/D electrode for low-cost OTFT devices.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1291-1292
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• 2008

ITO is widely used as an anode material in OLED, because of its good transparency, low electrical resistivity, high work function, and efficient hole injection properties. The interface between the electrode and the organic layer in the OLED effects the charge injection process and may influence the electrical and the luminance properties. Surface treatment of ITO, such as an Aquaregia treatment has been shown to enhance the efficiency, and luminance characteristics of the OLED. In this study, we investigated the effect of Aquaregia treatment. The fundamental structures of the OLED were ITO/NPB/$Alq_3$/LiF/Al. The current density-voltage-luminance, efficiency, and lifetime characteristics were measured with untreated and Aquaregia-treated ITO substrates. The Aquaregia treatment was found to enhance the performance of OLED. For the Aquaregia treated device, the maximum luminance and efficiency were increased by about 2 times compared to the untreated device. The mechanism of the Aquaregia treatment is discussed based on AFM analyses.

• 한국기계가공학회지
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• 제20권9호
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• pp.84-89
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• 2021

Indium tin oxide (ITO) transparent electrodes, which are used to manufacture organic light-emitting diodes, are used in light-emitting surface electrodes of display EL panels such as cell phones and TVs, liquid crystal panels, transparent switches, and plane heating elements. ITO is a major component that consists of indium and tin and is advantageous in terms of obtaining sheet resistance and light transmittance in a thin film. However, the optical performance of devices decreases with an increase in its thickness. A digital holography system was constructed and measured for the step measurement of the ITO thin film, and the reliability of the technique was verified by comparing the FE-SEM measurement results. The error rate of the step difference measurement was within ±5%. This result demonstrated that this technique is useful for applications in advanced MEMS and NEMS industrial fields.

• 열처리공학회지
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• 제24권2호
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• pp.87-91
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• 2011

Single layer Sn doped $In_2O_3$ (ITO) films and ITO 50 nm / Au 10 nm / ITO 40 nm (IAI) multilayer films were prepared with electron beam assisted magnetron sputtering on glass substrates. The effects of the Au interlayer, post-deposition atmosphere annealing and intense electron irradiation on the methanol gas sensitivity were investigated at room temperature. As deposited ITO films did not show any diffraction peaks in the XRD pattern, while the IAI films showed the diffraction peak for $In_2O_3$ (400). In this study, the gas sensitivity of ITO and IAI films increased proportionally with the methanol vapor concentration and an intense electron beam irradiated IAI film shows the higher sensitivity than the others film. From the XRD pattern, it is supposed that increased crystallization promotes the gas sensitivity. This approach is promising in gaining improvement in the performance of IAI gas sensors used for the detection of methanol vapor at room temperature.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1570-1572
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• 2004

OLED(organic light-emitting diode)소자에 사용되는 ITO(Indium-tin oxide)전극에 Ar/$O_3$ 플라즈마 표면처리 함으로써 ITO전극에 표면상태의 개선에 좋은 영향을 미치는 것으로 나타났다. 13.56MHZ RF 플라즈마 장치를 이용하여 Ar/$O_3$ 플라즈마 처리한 후 AFM(atomic force microscopy)측정을 통해 표면 morphologyjroughless를 분석하고, XPS(X-Ray Photoelectron Spectroscopy)분석을 통해 표면의 화학적 조성비 분석을 수행 하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.105-106
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• 2005

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process has been widely used in microelectronics and semiconductor processes. Indium tin oxide (ITO) thin film was polished by CMP by the change of process parameters for the improvement of CMP performance. Removal rate and planarity were improved after CMP process at the optimized process parameters compared to that before CMP process.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권4호
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• pp.231-236
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• 2004

A normally open thermopneumaticc-actuated microvalve has been fabricated and their properties are investigated. The advantages of the proposed microvalve are of the low cost fabrication process and the transparent optical property using polydimethylsiloxane (PDMS) and indium tin oxide (ITO) glass. The fabricated microvalves with in-channel configuration are easily integrated with other microfluidic devices on the same substrate. The fabrication process of thermopneumatic-actuated microvalvesusing PDMS is very simple and its performance is very suitable for a disposable lab-on-a-chip. The PDMS membrane deflection increases and the flow rates of the microchannel with microvalvels decrease as the applied power to the ITO heater increases. The powers at flow-off are dependent on the membrane thickness and the applied inlet pressure but are independent of the channel width of microvalves. The flow rate is well controlled by the switching function of ITO heater and the closing/opening times are around 20 sec and 25 sec, respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.1878-1880
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• 2005

In this research, We investigated the effect of $O_2/O_3$ Plasma treatment of indium-tin oxide (ITO) surface on the performance of organic light emitting devices (OLEDs). The OLED had a structure of ITO/N,N'-diphenyl-N,N' -(3-methylphenyl)-1, 1'-biphenyl-4-4'-diamine (TPD)/Tris (8-hydroxyquinolinato) Aluminum $(Alq_3)/Al$. The ITO surface was treated by $O_2/O_3$ plasma with different RF power chamber pressure and exposure time. As a result, the emission efficiency of the OLEDs could be improved obviously.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.321-321
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• 2010

The PEDOT:PSS layer is usually used as hole transporting layer for the polymer bulk heterojunction solar cells. However, the interface between ITO and PEDOT:PSS is not stable and the chemical reaction between ITO and PEDOT can result in degraded device performance. We used the tungsten oxides as a hole transport layer by spin-coating. The $WO_3$ nanoparticles were well dispersed in ammonium hydroxide and deionized water and formed thin layer on the ITO anode. We found that $WO_3$ surface is more hydrophobic than the bare ITO or PEDOT:PSS-coated surfaces. The hydrophobic surfaces promote an ordered growth of P3HT films. A higher degree of P3HT ordering is expected to improve the hole mobility and the lifetime of the device using the tungsten oxide showed better stability compared to the device using the PEDOT:PSS.

• 한국진공학회지
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• 제18권1호
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• pp.30-36
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• 2009

투명 전자소자의 고유전 $HfO_2$ 절연막을 개발하기 위하여, ITO/$HfO_2$/ITO 금속-절연체-금속 (Metal-Insulator-Metal, MIM) 커패시터 구조를 형성한후 $HfO_2$ 박막의 두께에 따른 전기적, 광학적, 구조적 특성의 변화를 연구하였다. $HfO_2$ 박막의 두께가 50 nm에서 300 nm로 증가함에 따라 유전상수는 20에서 10이하로 감소하였으나, $HfO_2$ 두께가 증가함에 따라 누설전류는 감소하여 200 nm 이상의 두께에서는 $2.7{\times}10^{-12}\;A/cm^2$ 이하의 낮은 누설전류 특성을 나타내었다. ITO/$HfO_2$/ITO MIM 커패시터의 $HfO_2$ 박막의 두께가 50 nm에서 300 nm로 증가함에 따라 투과율은 감소하였으나 300 nm 두께에서도 가시광선 영역에서 80% 이상의 투과율을 나타내어 우수한 투과도 특성을 나타내었다.