• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.04a
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• pp.177-180
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• 2003

We investigated transmittance, surface characteristics, and resistivity according to bending of ITO(indium tin oxide) film with four other multi-barrier film. Transmission data of ITO film with four ITO films showed there was about large 90% transmission above 550nm wavelength at three multi-barrier structures. But, both-side hard coated structure showed relatively low 75% transmission above 550nm wavelength. And, surface images measured from SEM(scanning electron microscope) showed both-side hard coated structure have a tendency of more roughness. Also, resistivity change of four other multi-barrier film showed there was the lowest change at one-side hardcoated structure. Subsequently, with result of resistivity change according to position, we knew the resistivity change of the center increased rapidly than that of the edge.

• Journal of the Korean institute of surface engineering
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• v.40 no.3
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• pp.144-148
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• 2007

To prepare the transparent electrode for electronic devices such as flat panel or flexible displays, solar cells, and touch panels; tin doped $In_2O_3$ (ITO) films with low resistivity and a high transparency were fabricated using a facing target sputtering (FTS) system at the various oxygen gas flow rate. The carrier concentration and mobility of ITO films were measured by Hall Effect measurement. And the transmittance was measured using the UV-VIS spectrometer. As a result, we can obtain the ITO thin films prepared at 10% oxygen gas flow ratio, thickness 150 nm with transmittance 85% and resistivity $8.1{\times}10^{-4}{\Omega}cm$ and surface roughness 5.01 nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05b
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• pp.58-61
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• 2003

ITO (indium tin oxide) thin films on PET (polyethylene terephthalate) substrate have been deposited by a dc reactive magnetron sputtering without heat treatments such as substrate heater and post heat treatment. Each sputtering parameter during the sputtering deposition is an important factor for the high quality of ITO thin films deposited on polymeric substrate. Particularly, the material, electrical and optical properties of as-deposited ITO oxide films are dominated by the ratio of oxygen partial pressure. As the experimental results, the excellent ITO films are prepared on PET substrate at the operating conditions as follows: operating pressure of 5 mTorr,target-substrate distance of 45 mm, dc power of 20-30 W, and oxygen gas ratio of 10 %. The optical transmittance is above 80 % at 550 nm, and the sheet resistance and resistivity of films are $24\;{\Omega}$/square and $1.5{\times}10^{-3}\;cm$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.1
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• pp.7-11
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• 2015

In this study, $Si_3N_4$/SnZnO/AZO/Ag/Ti/ITO multi-layer film were prepared on glass substrate by DC/RF magnetron sputtering method. To prevent interfacial reaction between Ag and ITO layer, Ti buffer layer was inserted. Optical properties and sheet resistance were studied depending on laminating times of each multi-layered film especially in visible ray. The simulation program, EMP (essential macleod program), was adopted and compared with experimental data to expect the experimental result. It was found out that the transmittance of the first stacked $Si_3N_4$/SnZnO/AZO/Ag/Ti/ITO multi-layer film was more than 90%. However, with increasing stacking times, the optical properties of $Si_3N_4$/SnZnO/AZO/Ag/Ti/ITO multi-layer film get worse. Consequently, Ti layer is good for oxidation barrier, but too many uses of this layer may have an adverse effect to optical properties of TCO film.

• Journal of the Korean institute of surface engineering
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• v.47 no.6
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• pp.311-315
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• 2014

Indium tin oxide (ITO) thin films (30 nm) were deposited on PET substrate by reactive DC magnetron sputtering using In/Sn(2, 5 wt.%) metal alloy target without intentionally substrate heating during the deposition under different DC powers of 70 ~ 110 W. The electrical properties were estimated by Hall-effect measurements system. The resistivity of ITO thin film deposited using In/Sn (5 wt.%) metal alloy target at low DC power increased with increasing annealing time. However, they increased with increasing annealing time at high DC power. In the case of ITO (Sn 2 wt%), we can't find clear change in resistivity with increasing annealing time. However, carrier density and mobility showed difference behavior due to change of oxygen vacancy.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.20 no.9
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• pp.84-89
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• 2021

Indium tin oxide (ITO) transparent electrodes, which are used to manufacture organic light-emitting diodes, are used in light-emitting surface electrodes of display EL panels such as cell phones and TVs, liquid crystal panels, transparent switches, and plane heating elements. ITO is a major component that consists of indium and tin and is advantageous in terms of obtaining sheet resistance and light transmittance in a thin film. However, the optical performance of devices decreases with an increase in its thickness. A digital holography system was constructed and measured for the step measurement of the ITO thin film, and the reliability of the technique was verified by comparing the FE-SEM measurement results. The error rate of the step difference measurement was within ±5%. This result demonstrated that this technique is useful for applications in advanced MEMS and NEMS industrial fields.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.245-245
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• 2016

본 연구에서는 선형 대향 타겟 스퍼터 (Linear Facing Target Sputtering: LFTS) 시스템을 이용하여 ITO와 Ti doped $In_2O_3$ (TIO) 타겟을 Co-sputtering한 InSnTiO 투명 전극의 전기적, 광학적 특성을 연구하였다. InSnTiO 투명전극의 전기/광학적 및 구조적 특성은 Hall measurement, UV/Vis spectrometry, X-ray Diffraciton 분석법을 통해 최적화 하였고, DC power, substrate to target distance (TSD), target to target distance (TTD), ambient treatment 변수 조절을 통해 최적화된 LFTS InSnTiO 투명전극을 제작하였다. LFTS 공정을 이용한 InSnTiO 투명전극의 성막 공정 중 DC파워와 공정압력 변화에 따른 구조적, 표면적 특성 변화는 Field-Emission Scanning Electron Microscopy (FE-SEM) 과 X-ray Diffractometer (XRD) 분석을 통해 관찰하였다. 이렇게 증착된 InSnTiO 투명전극은 급속열처리 시스템으로 (Rapid Thermal Annealing system) 후열처리를 진행하여 투과도의 향상과 면저항의 감소를 확인하였다. 본 연구에서는 다양한 분석을 통해 Co-sputtering한 InSnTiO 박막의 특성과 다양한 장점을 소개한다.

• Journal of the Korean institute of surface engineering
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• v.42 no.6
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• pp.276-279
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• 2009

ITO and ITO:Ce films were deposited by DC magnetron sputtering using an ITO ($SnO_2$: 10 wt%) and $CeO_2$ doped ITO ($CeO_2$: 0.5, 3.0, 4.0 and 6.0 wt%) ceramic targets, respectively, on unheated polyethylene terephthalate (PET) substrates. The lowest resistivity $6.7{\times}10^{-4}{\Omega}cm$ was obtained from ITO:Ce film deposited using $CeO_2$ (3.0 wt%) doped ITO target. On hte other hand, ITO:Ce (0.5wt%) film has the excellent mechanical durability which was evaluated by bending test. This result was attributed to the higher binding energy of $CeO_2$ compared to $SnO_2$ and $In_2O_3$. Therefore, $CeO_2$ atoms have a small displacement caused by the bombardment of high energy particles, and it attribute to the increase in adhesion caused by decrease in internal stress. The average transmittance of the films was more than 80% in the visible region.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.4
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• pp.47-52
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• 2017

Recently, a great attention has been paid to the mechanical behavior of ITO (Indium Tin Oxide) film, which is widely used in current smart devices due to its excellent electrical properties and transparency. In this study, the reliability of ITO thin films on flexible substrates was investigated using bending test and bending fatigue test. According to the relative position of ITO and substrate, the experiment was conducted on both outer and inner bending conditions. Inner bending condition exhibited superior electrical stability compared to outer bending test. The electrical resistance during outer bending fatigue test significantly increased compared to that in the inner bending fatigue. The crack nucleation and propagation differs according to the stress state and they have a great influence on the electrical resistance. The crack morphologies were observed by scanning electron microscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.403-403
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• 2011

결정질 태양전지는 태양전지 시장에 큰 서막을 장식하였다. 현재 여러 종류의 태양전지 기술들이 많이 나오고 있지만 결정질 태양전지는 변환 효율이 좋고 신뢰성이 높아서 높은 시장 점유율을 차지하고 있다. 하지만 응용 분야가 적고 기판 가격이 비싸다는 단점이 있다. 현재에는 응용분야 개선을 위하여 Flexible solar cell에 대한 연구가 활발하다. Flexible solar cell에 상부전극은 결정질 태양전지에서 사용되는 Ag나 Al 전극 대신 TCO 종류의 일종인 ITO를 많이 사용한다. Flexible Solar cell은 Organic Solar cell과 Amorphous Solar Cell 두 가지 범주를 가지고 있다. 본 연구에서는 Amorphous Solar Cell의 전극에 사용되는 ITO의 온도 Stress에 따른 특성을 연구함으로써 Engineer의 근본적인 이슈인 저비용, 고효율에 초점을 맞추어 소자특성을 확인해 보도록 한다. Glass에 E-beam evaporation 장비를 이용하여 ITO를 증착하였고 제작된 소자를 200, 250, 300, 350$^{\circ}C$의 온도변수를 두어 1시간동안 Annealing 하였다. 각 Annealing 온도에 따른 Sheet resistivity,와 visible 영역의 transmittant를 측정하였다. visible영역에서의 transmittant는 Annealing 200$^{\circ}C$에서 300$^{\circ}C$로 온도가 증가함에 따라 transmittant는 증가하다가 350$^{\circ}C$에서 감소하였다. Sheet resistivity의 경우 Annealing 200$^{\circ}C$에서 300$^{\circ}C$로 온도가 증가함에 따라 ITO의 Sheet resistivity가 줄어들다가 350$^{\circ}C$에서 증가하였다. 300$^{\circ}C$로 Annealing한 ITO가 가시광선 영역에서 transmittant가 가장 높은 80%로 측정 되었다. Sheet resistivity역시 300$^{\circ}C$로 Annealing한 ITO가 8${\Omega}/{\Box}$로 가장 낮았다. Annealing 온도가 ITO의 electrical 특성과 optical 특성에 변화를 주었음을 알 수 있었다. Resistivity가 낮은 ITO 전극으로 박막 셀을 제작한다면 좋은 효율을 얻을 수 있을 거라 생각된다.