Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2003.05b
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- Pages.58-61
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- 2003
Characteristic Changes of ITO/PET Thin Films with Ratio of Oxygen Partial Pressure
산소분압비에 따른 ITO/PET박막의 특성변화
- Published : 2003.05.16
Abstract
ITO (indium tin oxide) thin films on PET (polyethylene terephthalate) substrate have been deposited by a dc reactive magnetron sputtering without heat treatments such as substrate heater and post heat treatment. Each sputtering parameter during the sputtering deposition is an important factor for the high quality of ITO thin films deposited on polymeric substrate. Particularly, the material, electrical and optical properties of as-deposited ITO oxide films are dominated by the ratio of oxygen partial pressure. As the experimental results, the excellent ITO films are prepared on PET substrate at the operating conditions as follows: operating pressure of 5 mTorr,target-substrate distance of 45 mm, dc power of 20-30 W, and oxygen gas ratio of 10 %. The optical transmittance is above 80 % at 550 nm, and the sheet resistance and resistivity of films are