• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.4
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• pp.258-262
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• 2017

Recently energy consumption has been increasing because of advances in the industry, and electrical fires have accounted for 31.9% of all fire accidents. An electrical fire is caused by a short circuit, power surge, or poor contact. Safety devices for short circuits or power surges are currently mandatory and can actually detect problems, but arcing caused by contact failure is difficult to detect in advance. This study used an IR sensor to detect the heat concentration caused by the arc. The data from the low-resolution sensor was amplified as much as four times by interpolation to find the exact location of the heat source and were then investigated.

• Proceedings of the Korea Multimedia Society Conference
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• 2012.05a
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• pp.262-263
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• 2012

다중 센서의 영상, 예를 들어 가시광 영상과 적외선 영상은 서로 다른 특징을 가지고 있기 때문에 본 논문에서는 IR 영상의 특징을 보존한 새로운 혼합기법을 제안하다. 이러한 혼합기법은 의료 영상, 보안 영상 등에서 매우 중요하고 다양하게 다루어진다. 일반적인 혼합기법을 사용하게 되면 영상간의 특색 때문에 혼합 시 조화롭지 못하는 문제점을 가진다. 이러한 문제점을 해결하기 위해서 본 논문에서는 중요도 맵을 추출하고 그 영역에 대하여 포아송 블랜딩을 통해 두 개의 다른 특징을 가시광 영상을 혼합한다. 제안한 알고리즘은 기존의 연구와 다르게 혼합할 영역을 수동으로 지정하는 것이 아니라 자동적으로 추출하고, 가시광 영상에 IR 영상에서만 검출되는 영역을 결합한 새로운 결과를 얻을 수 있었다.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.4 no.4
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• pp.34-38
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• 2005

This is a widespread requirement for low cost lightweight thermal imaging sensors for both military and civilian applications. Today, a large number of uncooled infrared detector developments are under progress due to the availability of silicon technology that enables realization of low cost IR sensor. System prices are continuing to drop, and swelling production volume will soon drive process substantially lower. The feasibility of micromechanical optical and infrared (IR) detection using microcantilevers is demonstrated. Microcantilevers provide a simple Structurefor developing single- and multi-element sensors for visible and infrared radiation that are smaller, more sensitive and lower in cost than quantum or thermal detectors. Microcantilevers coated with a heat absorbing layer undergo bending due to the differential stress originating from the bimetallic effect. This paper reports a micromachined silicon uncooled thermal imager intended for applications in automated process control. This paper presents the design, fabrication, and the behavior of cantilever for thermomechanical sensing.

• Journal of Sensor Science and Technology
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• v.18 no.2
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• pp.135-138
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• 2009

$64{\times}1$ forcal plane infrared detector has been fabricated by using HgCdTe epi layer. HgCdTe was grown on GaAs substrate by using metal organic chemical vapor deposition. This paper describes key developments in the epi layer growth and device fabrication process. The performance of IR imaging system is summarized.

• Journal of the Korean Applied Science and Technology
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• v.31 no.2
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• pp.190-196
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• 2014

The sol-gel method was used to prepare binary metal oxide ($IrO_2-RuO_2$) pH sensor. The electrodes that mole percent compositions (mol%) of $IrO_2$ and RuO2 were 70:30 and 30:70 were selected. The characterizations of Nernstian response over pH range, response rate, interference on alkaline metals and reproducibility were investigated. Also the electroanalytical properties of these electrodes were evaluated in comparison with a commercial glass pH electrode. The composition of $IrO_2:RuO_2$ 70:30 mol% was chosen as better electrode formulation. The electrode was not susceptible to the action of interfering ions such as $Li^+$, $Na^+$ and $K^+$.

• Journal of Sensor Science and Technology
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• v.3 no.2
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• pp.74-80
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• 1994

Silicon direct bonding technology is very attractive for both silicon-on-insulator devices and sensor fabrication because of its thermal stress free structure and stability. The process of SDB includes hydration of silicon wafer and heat treatment in a wet oxidation furnace. After hydration process, hydroxyl groups of silicon wafer were analyzed by using Fourier transformation-infrared spectroscopy. In case of hydrophilic treatment using a ($H_{2}O_{2}\;:\;H_{2}SO_{4}$) solution, hydroxyl groups are observed in a broad band around the 3474 $cm^{-1}$ region. However, hydroxyl groups do not appear in case of diluted HF solution. The bonded wafer was etched by using tetramethylammonium hydroxide etchant. The surface of the self etch-stopped silicon dioxide is completely flat, so that it can be used as sensor applications such as pressure, flow and acceleration, etc..

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.05a
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• pp.36-36
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• 2002

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2013.05a
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• pp.365-366
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• 2013

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2017.10a
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• pp.94-95
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• 2017

지정된 경로에서 6축 센서의 가속도와 각속도를 이용하여 물체의 이동거리를 계산하는 경우 가속도 센서에서 나오는 데이터는 중력을 사용하여 값을 보내주는데, 평평한 상태에서는 중력가속도만 나오므로 영향이 없지만 물체가 움직이면서 기울어지거나 흔들리는 경우 중력가속도와 운동가속도가 더해지고 이에 따라 이동거리 계산에 오차가 발생한다. 이 논문에서는 가속도와 각속도만으로 보정이 힘들다고 판단하여 적외선 센서를 사용하여 이동거리를 산출하는 방법을 제안하고 시스템을 개발한다. 제안한 시스템은 지정된 경로를 따라 이동할 때 적외선 센서를 이용하여 궤도의 구분선을 인식하여 기존 6축 센서로 계산된 이동거리를 보정한다.

• Journal of Sensor Science and Technology
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• v.26 no.1
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• pp.28-34
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• 2017

An NIR grism Si optical area sensor spectrometer with in-band reference wavelength is designed and fabricated. It is composed of a transmission type diffraction grating (spatial density 300 line/mm), a rectangular N-BK7 prism (apex angle 30 degree), NIR filter(cutoff wavelength 720 nm), an imaging convex lens(focal length 50 mm F1.8) and an IR modified DSLR camera (Canon EOS40D) of Si optical area sensor ($3,888{\times}2,592$ pixels, pixel size $5.710{\mu}m$). "In-band reference wavelength function" is implemented using non-dispersive 0th diffraction order optical beam. The NIR grism spectrometer is tested in a laboratory using a halogen lamp and a Neon lamp. And the spectrometer is used in an astronomy field for obtaining the planet Jupiter NIR spectrum. In-band reference wavelength i.e. un-deviation wavelength is 846 nm, an wavelength resolution is 0.3027 nm/pixel, an wavelength resolving power is 2,794 and an wavelength range is 650~1,000 nm.