• Transactions on Electrical and Electronic Materials
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• v.18 no.1
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• pp.7-12
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• 2017

This work takes place in the context of the development of a transport phenomena simulation based on group III nitrides. Gallium and boron nitrides (GaN and BN) are both materials with interesting physical properties; they have a direct band gap and are relatively large compared to other semiconductors. The main objective of this paper is to study the effect of boron content on the electron transport of the ternary compound $B_xGa_{(1-x)}N$ and the effect of the temperature of this alloy at x=50% boron percentage, specifically the piezoelectric, acoustic, and polar optical scatterings as a function of the energy, and the electron energy and drift velocity versus the applied electric field for different boron compositions ($B_xGa_{(1-x)}N$), at various temperatures for $B_{0.5}Ga_{0.5}N$. Monte carlo simulation, was employed and the three valleys of the conduction band (${\Gamma}$, L, X) were considered to be non-parabolic. We focus on the interactions that do not significantly affect the behavior of the electron. Nevertheless, they are introduced to obtain a quantitative description of the electronic dynamics. We find that the form of the velocity-field characteristic changes substantially when the temperature is increased, and a remarkable effect is observed from the boron content in $B_xGa_{(1-x)}N$ alloy and the applied field on the dynamics of holders within the lattice as a result of interaction mechanisms.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.42 no.3
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• pp.45-50
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• 2005

A UV camera is being used in various application regions such as industry, medical science, military, and environment monitoring. A ROIC(ReadOut IC) is developed and can read the responses from UV photodiode sensors which are made with III-V nitride semiconductors of GaN series haying high resolution and high efficiency. To design FPA(Focal Plane Array) UV $8{\times}8$ ROIC, the photodiode type sensor devices are modeled as the capacitor type ones. The ROIC reads out signals from the detector at)d outputs sequentially pixel signals after amplifying and noise filtering of them. The ROIC is fabricated using the $0.5{\mu}m$ 2Poly 3Metal N-well CMOS process. And then, it and photodiode array are hybrid bonded by gold stud bumping process using ACP(Anisotropic Conductive Paste). After the packaging, UV images appearing on PC verified the operations of the ROIC.

• Korean Journal of Materials Research
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• v.12 no.3
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• pp.190-194
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• 2002

InN/GaN multi-layers were grown by metalorganic chemical vapor deposition(MOCVD) in order to get the appropriate structure for an high power blue-green light emitting diode(LED), and effects of growth conditions (growth temperature, pressure, and $trimethylindium(TMIn)-NH_3-N_2\; flow\; rare)$ on the integrated photoluminescence (PL) intensity and PL peak energy in InN/GaN multi-layers were investigated. The optimized growth conditions with the highest integrated PL intensity for InN/GaN multi-layers were obtained: the growth temperature at $780^{\circ}C$, the growth pressure at 325 Torr, the TMIn flow rate with 150 $m\ell$/min, the $NH_3$flow rate with 3.2 ι/min, and $N_2$ flow rate with 2 ι/min.