• JOURNAL OF ELECTRICAL WORLD
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• s.297
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• pp.66-72
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• 2001

1957년에 사이리스터가 발표된 이래 파워반도체디바이스(이하 ''파워디바이스''라 한다)의 발전과 더불어 이것을 사용하여 전력변환$\cdot$제어와 이를 응용한 파워일렉트로닉스 산업도 현저한 발전을 이루어 왔다. 21세기를 맞이하여 지구의 유한성을 강하게 인식하고 자원과 에너지를 고도이용하는 순환형 사회에로의 전환을 도모하는 기술혁신과 IT(정보기술)를 구사한 기술보급의 움직임이 활발해지고, 파워일렉트로닉스와 그 키파트인 파워디바이스가 수행하여야 할 역할은 점점 더 중요해지고 있다. 이와 같은 배경 하에서 파워디바이스는 인버터제어를 주목적으로 사이리스터, GTO(Gate Turn-off Thyristor), 바이폴라트랜지스터, MOSFET(Metal Oxide Silicon Field Effect Transistor)에서 IGBT(Insulated Gate Bipolar Transistor)에로 진전되고, 그 응용분야도 가전제품에서 OA, 산업, 의료, 전기자동차, 전철, 전력에 이르는 폭넓은 분야로 확대되었다. 현재 파워디바이스를 취급하는 전력의 범위는 수W의 스위칭 전원에서 GW급의 직류송전까지 9단위까지에 이르러 광범위한 전력 제어가 가능하게 되었다. 한편 응용의 중심이 되는 IGBT는, 고속화와 저손실화 및 파괴 내량의 향상을 지향한 개량을 거듭하여 제5세대제품이 나타나기 시작하였다. 또한 IGBT에 구동$\cdot$보호$\cdot$진단 회로 등을 넣어 모듈화한 IPM(Intelligent Power Module)이 그 편리성과 소형화를 특징으로 파워디바이스의 주역의 자리에 정착하였다. 가전$\cdot$산업$\cdot$자동차$\cdot$전철의 각 분야에서는 시장 니즈에 최적 설계된 IPM이 개발되게 되어 보다 더한 시장확대가 기대되고 있다. 또한 종래의 Si(실리콘)에 대신하는 반도체 재료로서 SiC(실리콘 카바이드 : 탄화규소)에 대한 기대가 크고 MOSFET나 SBD 등의 파워디바이스의 조기실용화에의 대처노력도 주목할 만하다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.14-15
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• 2009

Insulated Gate Bipolar Transistor(IGBTs) are widely used in power device industry. However, to improve the breakdown voltage, IGBTs are suffered from increasing on-state voltage drop due to structural design. In this paper, the new structure is proposed to solve this problem. The proposed structure has double p-floating layer inserted in n-drift layer. The p-floating layers improve the breakdown voltage compared to conventional IGBT without change of other electrical characteristics such as on-state voltage drop and threshold voltage. this is because the p-floating layers expand electric field distribution at blocking state. A electrical characteristic of proposed structure is analyzed by using simulators such as TSUPREM and MEDICI. As a result, on-state voltage drop and threshold voltage are same to a conventional TIGBT, but breakdown voltage is improved to 16%.

• Journal of Power Electronics
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• v.16 no.2
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• pp.778-785
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• 2016

An excess carrier lifetime extraction method is derived for physics-based insulated gate bipolar transistor (IGBT) models with consideration of the latest development in IGBT modeling. On the basis of the 2D mixed-mode Sentaurus simulation, the clamp turn-off test is simulated to obtain the tail current. The proposed excess carrier lifetime extraction method is then performed using the simulated data. The comparison between the extracted results and actual lifetime directly obtained from the numerical device model precisely demonstrates the accuracy of the proposed method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.374-377
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• 2003

In this paper, turn on characteristics of (Punch-Through Insulated Gate Bipolar Transistor) PT-IGBT has been studied. Based on the transient power loss, turn on charges first base to collector capacitance. Furthermore we present the charge variation in the base including n+ buffer layer to express the transient turn-on characteristics of the device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.4
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• pp.214-217
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• 2017

An IGBT (insulated gate bipolar transistor) device has an excellent current-conducting capability. It has been widely employed as a switching device to use in power supplies, converters, solar inverters, and household appliances or the like, designed to handle high power. The aim with IGBT is to meet the requirements for use in ideal power semiconductor devices with a high breakdown voltage, an on-state voltage drop, a high switching speed, and high reliability for power-device applications. In general, the concentration of the drift region decreases when the breakdown voltage increases, but the on-resistance and other characteristics should be reduced to improve the breakdown voltage and on-state voltage drop characteristics by optimizing the design and structure changes. In this paper, using the T-CAD, we designed the NPT-IGBT (non punch-through IGBT) and FS-IGBT (field stop IGBT) and analyzed the electrical characteristics of those devices. Our analysis of the electrical characteristics showed that the FS-IGBT was superior to the NPT-IGBT in terms of the on-state voltage drop.

• Proceedings of the KIEE Conference
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• 1987.11a
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• pp.539-542
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• 1987

This paper presents driving circuits technology to enable high speed drive of MOSFET, IGBT(Insulated Gate Bipolar Transistor) and SIT(Static Induction Transistor). In addition to, it demonstrates application circuits(high frequency resonant type inverters, ultrasonic power supply etc.) using the, developing drive circuits.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.30-31
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• 2008

As the power density and switching frequency increase, thermal analysis of power electronics system becomes imperative. The analysis provides valuable information on the semiconductor rating, long-term reliability. In this paper, thermal distribution of the Non Punchthroug(NPT) Insulated Gate Bipolar Transistor with heatsink areas has been studied. For analysis of thermal distribution, we obtained results by using finite element simulator, ANSYS and compared with experimental data by thermocam.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.147-148
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• 2005

As the power density and switching frequency increase, thermal analysis of power electronics system becomes imperative. The analysis provides valuable information on the semiconductor rating, long-term reliability and efficient heat-sink design. In this paper, thermal distribution of the Insulated Gate Bipolar Transistor Module has been studied with different conditions and heat sink materials. For analysis of thermal distribution, we obtained results by using finite element simulator, Ansys.

• Nuclear Engineering and Technology
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• v.55 no.9
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• pp.3334-3341
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• 2023

We studied the irradiation effects of fast neutron generated by a 30 MeV cyclotron on the electrical and switching characteristics of NPT-IGBT devices. Fast neutron fluence ranges from 2.7 × 10⁹ to 1.82 × 10¹³ n/cm². Electrical characteristics of the IGBT device such as I-V, forward voltage drop and additionally switching characteristics of turn-on and -off were measured. As the neutron fluence increased, the device's threshold voltage decreased, the forward voltage drop increased significantly, and the turn-on and turn-off time became faster. In particular, the delay time of turn-on switching was improved by about 35% to a maximum of about 39.68 ns, and that of turn-off switching was also reduced by about 40%-84.89 ns, showing a faster switching.

• Transactions of the Korean hydrogen and new energy society
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• v.26 no.2
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• pp.184-191
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• 2015

As the power electronics system increases the frequency, the power loss and thermal management are paid more attention. This research presents a real time model of dissipation power with junction temperature response for 120kw IGBT inverter which is applied to the thermal management of high power IGBT inverter. Since the computational time is critical for real time simulation, look-up tables of IGBT module characteristic curve are implemented. The power loss from IGBT provides a clue to calculate the temperature of each module of IGBT. In this study, temperature of each layer in IGBT is predicted by lumped capacitance analysis of layers with convective heat transfer. The power loss and temperature of layers in IGBT is then communicated due to mutual dependence. In the dynamic model, PWM pulses are employed to calculation real time IGBT and diode power loss. Under Matlab/Simulink$^{(R)}$ environment, the dynamic model is validated with experiment. Results showed that the dynamic response of power loss is closely coupled with effective thermal management. The convective heat transfer is enough to achieve proper thermal management under guideline temperature.