Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1987.11a
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- Pages.539-542
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- 1987
A New Drive Technology of Power Transistor Family Devices for Speed-up of the Output Frequency
출력주파수의 고주파화를 위한 전력용 Transistor Family의 구동기술
- Yoo, Dong-Wook (Power Electronics Lab., K.E.R.I.) ;
- Kim, Dong-Hee (Power Electronics Lab., K.E.R.I.) ;
- Kweon, Soon-Man (Power Electronics Lab., K.E.R.I.) ;
- Byun, Young-Bok (Power Electronics Lab., K.E.R.I.) ;
- Bae, Jin-Ho (Youngnam Univ. Electrical Eng.)
- 유동욱 (한국전기연구소, 전력전자연구실) ;
- 김동희 (한국전기연구소, 전력전자연구실) ;
- 권순만 (한국전기연구소, 전력전자연구실) ;
- 변영복 (한국전기연구소, 전력전자연구실) ;
- 배진호 (영남대 전기공학과)
- Published : 1987.11.20
Abstract
This paper presents driving circuits technology to enable high speed drive of MOSFET, IGBT(Insulated Gate Bipolar Transistor) and SIT(Static Induction Transistor). In addition to, it demonstrates application circuits(high frequency resonant type inverters, ultrasonic power supply etc.) using the, developing drive circuits.
Keywords