• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.46-47
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• 2005

이번 연구는 $BCl_3/CF_4$ 플라즈마를 사용하여 반도체소자 제조 시 널리 이용되는 GaAs 계열반도체 중 대표적인 재료인 GaAs/AlGaAs 및 GaAs/InGaP 구조를 선택적으로 건식 식각한 후 분석한 것이다. 공정변수로는 ICP 소스파워를 0-500W, RIE 파워를 0-50W 그리고 $BCl_3/CF_4$ 가스 혼합비를 중점적으로 변화시켰다. $BCl_3$ 플라즈마만을 사용한 경우 (20$BCl_3$, 20W RIE power, 300W ICP source power, 7.5mTorr) 는 GaAs:AlGaAs의 선택비가 0.5:1 이었으며 이때 GaAs의 식각률은 ~2200${\AA}/min$ 이었으며 AlGaAs의 식각률은 ~4500${\AA}/min$ 이었다. 식각 후 표면의 RMS roughness은 < 2nm로 깨끗한 결과를 보여주었다. 15% $CF_4$ 가스가 혼합된 $17BCl_3/3CF_4$, 20W RIE power, 300W ICP source power, 7.5mTorr의 조건에서 3분 동안 공정한 결과 순수한 $BCl_3$ 플라즈마만을 사용한 경우보다 표면은 다소 거칠었지만 (RMS roughness: ~8.4) GaAs의 식각률 (~980nm/min)과 AlGaAs와 InGaP에 대한 GaAs의 선택도 (GaAs:AlGaAs=16:1, GaAs:InGaP=38:1)는 크게 증가하였다. 그리고 AlGaAs 및 InGaP의 경우 식각 시 나타난 휘발성이 낮은 식각 부산물 ($AlF_3:1300^{\circ}C$, $InF_3:1200^{\circ}C$)로 인하여 50nm/min 이하의 낮은 식각률을 보였고, 62.5%의 $CF_4$가 혼합된 $7.5BCl_3/12.5CF_4$플라즈마의 조건에서는 AlGaAs 및 InGaP에 대한 GaAs의 선택도가 각각 280:1, 250:1을 나타내었다.

• Bulletin of the Korean Chemical Society
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• 제27권3호
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• pp.373-375
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• 2006

$CF_4$ gas is one of the most common chemicals used for dry etching in semiconductor manufacturing processes. For application to the etching process and environmental control, the low-pressure inductively coupled plasma (LP-ICP) was employed to obtain the spectrum of $CF_4$ gas. In terms of the analysis of the spectra, trace CF radical by A-X and B-X transitions was detected. The other $CF_x$ radicals, such as $CF_2$ and $CF_3$, were not seen in this experiment whereas strong C and $C_2$ emissions, dissociation products of $CF_4$ gas, were observed.

• 한국정밀공학회지
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• 제23권3호
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• pp.56-60
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• 2006

A high-resolution shadow mask, or called a nanostencil was fabricated for high resolution lithography. This high-resolution shadowmask was fabricated by a combination or MEMS processes and focused ion beam (FIB) milling. 500 nm thick and $2{\times}2mm$ large membranes wore made on a silicon wafer by micro-fabrication processes of LPCVD, photolithography, ICP etching and bulk silicon etching. A subsequent FIB milling enabled local membrane thinning and aperture making into the thinned silicon nitride membrane. Due to the high resolution of the FIB milling process, nanoscale apertures down to 70 nm could be made into the membrane. By local deposition through the apertures of nanostencil, nanoscale patterns down to 70 nm could be achieved.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2004년도 추계학술대회 논문집
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• pp.871-874
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• 2004

Fabrication of a high-resolution shadow mask, or called nanostencil, is presented. This high-resolution shadowmask is fabricated by a combination of MEMS processes and focused ion beam (FIB) milling. 500 nm thick and 2x2 mm large membranes are made on a silicon wafer by micro-fabrication processes of LPCVD, photolithography, ICP etching and bulk silicon etching. Subsequent FIB milling enabled local membrane thinning and aperture making into the thinned silicon nitride membrane. Due to high resolution of FIB milling process, nanoscale apertures down to 70 nm could be made into the membrane.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.798-800
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• 1998

(Ba,Sr)$TiO_3$ thin films were etched with $Cl_2$/Ar gas mixing ratio in an inductively coupled plasma (ICP) by varying the etching parameter such as f power, do bias voltage, and chamber pressure. The etch rate was $560{\AA}/min$ under Cl_2/(Cl_2+Ar)$ gas mixing ratio of 0.2, rf power of 600 W, do bias voltage of 250 V, and chamber pressure of 5 mTorr, At this time, the selectivity of BST to Pt, $SiO_2$ was respectively 0.52, 0.43. The surface reaction of the etched (Ba,Sr)$TiO_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS).

• 소성∙가공
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• 제14권7호
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• pp.624-627
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• 2005

In this paper, we investigated the possibility of replicating patterned media by nano-injection molding process with a metallic nano-stamper. The original nano-master was fabricated by I-beam lithography and ICP etching process. The metallic nano-stamper was fabricated using a nanoimprint lithography and nano-electroforming process. Finally, the nano-patterned substrate was replicated using a nano-injection molding process without additional etching process. The replicated patterns using nano-injection molding process were as small as 50nm in diameter, 150nm in pitch, and 50nm in depth.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1509-1511
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• 2001

In this study, etching characteristics of polyimide(Pl) film with $O_2/CF_4$ gas mixing ratio was studied using inductively coupled plasma (ICP). The etch rate and selectivity were evaluated to chamber pressure and gas mixing ratio. High etch rate (over 8000$\AA$/min) and vertical profile were acquired in $CF_4$/($CF_4+O_2$) of 0.2. The selectivities of polyimide to PR and polyimide to $SiO_2$ were 1.15, 5.85, respectively. The profiles of polyimide film etched in $CF_4/O_2$ were measured by a scanning electron microscope (SEM) with using an aluminum hard mask pattern. The chemical states on the polyimide film surface were measured by x-ray photoelectron spectroscopy (XPS).

• 한국정밀공학회지
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• 제28권2호
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• pp.245-250
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• 2011

A high-resolution shadow mask, a nanostencil, is widely used for high resolution lithography. This high-resolution shadowmask is often fabricated by a combination of MEMS processes and focused ion beam (FIB) milling. In this study, FIB milling on 500-nm-thin SiN membrane was tested and characterized. 500 nm thick and $2{\times}2$ mm large membranes were made on a silicon wafer by micro-fabrication processes of LPCVD, photolithography, ICP etching and bulk silicon etching. A subsequent FIB milling enabled local membrane thinning and aperture making into the thinned silicon nitride membrane. Due to the high resolution of the FIB milling process, nanoscale apertures down to 60 nm could be made into the membrane. The nanostencil could be used for nanoscale patterning by local deposition through the apertures.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 추계종합학술대회 논문집
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• pp.330-333
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• 1999

A Schottky characteristic is one of the important properties to determine the performance of GaN electronic devices. In this paper, we have studied how to improve the property after n$^{+}$ layer etching by ICP(Induced Coupled Plasma)-RIE(Reactive ion Etching). We have tried $N_2$radiation, annealing after $N_2$radiation, and annealing in $N_2$environment. We have found that a simple annealing method in $N_2$environment is enough to improve the Schottky characteristic for electronic device-Quality application.n.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.67-67
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• 2009

본 연구는 강유전체 박막의 buffer 층으로 사용되는 Yttrium oxide($Y_2O_3$) 박막에 대한 $BCl_3$/Ar 혼합가스 식각 특성에 대해 연구하였다. 식각 메카니즘을 해석하기 위해 QMS(Quadrupole Mass Spectrometer), OES(Optical Emission Spectroscopy)를 사용하여 플라즈마 특성을 추출하였다. 공정 조건(source power, bias power, pressure, total gas flow)을 동일하게 유지하고 $BCl_3$/Ar 혼합가스 비율을 변화시키며 실험을 진행 하였다. 혼합가스의 비율이 $BCl_3$(80%)/Ar(20%)일때 가장 높은 식각 속도을 나타냈고, 이후 점차 감소하였다. 이때의 식각 속도는 8.8 nm/min 였다. 이에 $Y_2O_3$는 이온 보조 화학식각 특성을 가짐을 확인하였다.