• Applied Science and Convergence Technology
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• v.23 no.4
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• pp.161-168
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• 2014

A real-time monitoring of immersed antenna type inductively coupled plasma (ICP) was done with a homemade 2 dimensional voltage probe array to check the uniformity of the plasma. Measured voltage values with a high impedance voltmeter are close to the floating potential of the plasma. As the substrate carrier was moving into a magnetron sputtering plasma diffusive from a $125mm{\times}625mm$ size cathode, measured results showed reliably separation of plasma into the upper and lower empty space over the carrier. Infra red thermal imaging camera was used to observe the cross corner effect in situ without eroding a target to the end of the usage. 3 dimensional particle trace model was used to analyze the magnetron discharge's behavior.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.65-66
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• 2005

Etching characteristics of $Ge_2Sb_2Te_5$ (GST) films were investigated using $Cl_2$/Ar inductively coupled plasma.We examined the etching characteristics such as etching rate and selectivity over oxide films of GST films using inductively coupled plasma (ICP) with various etching parameters such as $Cl_2$/Ar gas mixing ratios, ICP source power, pressure, and bias power. The maximum etch rate of GST film was $2,815{\AA}$/min and the selectivity higher than 12:1 over the oxide films was also obtained at the $Cl_2$ flow rates of 40 sccm.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.589-592
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• 1998

The performance of inductively coupled plasma (ICP) is enhanced by axial magnetic field driven by alternating current Helmholtz coils in this work. Langmuir pobe is used to characterize the plasma, and the etching performance is demonstrated with phororesist stripping process. It is shown that its density and uniformity depends on the frequency of driving current to the magnetic field.

• Applied Science and Convergence Technology
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• v.24 no.6
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• pp.237-241
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• 2015

The reactor impedance is calculated for a planar-type cylindrical inductively coupled plasma source by expanding the electromagnetic fields into their Fourier-Bessel series forms including the three-dimensional shape of the antenna. The mode excitation method is utilized to determine the electromagnetic fields based on a Poynting theorem-like relationship. From the obtained electromagnetic fields, a tractable form of the reactor impedance is obtained as a function of various plasma and geometrical parameters and applied to carry out a parametric study.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.5
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• pp.560-566
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• 2004

In this paper, the electrical and emission properties of electrodeless fluorescent lamp were discussed using the inductively coupled plasma (ICP) with the variation of argon gas pressure and RF power. The RF output was applied to the antenna in the range of 5∼50 W at 13.56 MHz. The internal plasma voltage of the chamber and the probe current were measured while varying the supply voltage to the Langmuir probe in the range of －100V∼＋100V. When the pressure of argon gas was increased, electric current was decreased. There was a significant electric current increase from 10 to 30 W. Also, when the RF power was increased, electron density was increased. Also, the emission spectrum, Ar- I lins, luminance were investigated. At this time, the input parameter for ICP RF plasma, Ar gas pressure and RF power were applied in the range of 10∼60 mTorr, 10∼300 W, respectively. This implies that this method can be used to find an optimal RF power for efficient light illumination in an electrodeless fluorescent lamp.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.88-88
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• 2003

Optical Emission Spectroscopy(OES) is a very important technology for real-time monitoring of plasma in a reactor during dry etching process. OES technology is non-invasive to the plasma process. It can be used to collect information on excitation and recombination between electrons and ions in the plasma. It also helps easily diagnose plasma intensity and monitor end-point during plasma etch processing. We studied high density planar inductively coupled BCl$_3$ and BCl$_3$/Ar plasma with an OES as a function of processing pressure, RIE chuck power, ICP source power and gas composition. The scan range of wavelength used was from 400 nm to 1000 nm. It was found that OES peak Intensity was a strong function of ICP source power and processing pressure, while it was almost independent on RIE chuck power in BCl$_3$-based planar ICP processes. It was also worthwhile to note that increase of processing pressure reduced negatively self-induced dc bias. The case was reverse for RIE chuck power. ICP power and gas composition hardly had influence on do bias. We will report OES results of high density planar inductively coupled BCl$_3$ and BCl$_3$/Ar Plasma in detail in this presentation.

• Transactions on Electrical and Electronic Materials
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• v.9 no.4
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• pp.156-162
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• 2008

We report results on a study of inductively coupled plasma (ICP) etching of Parylene-C (poly-monochloro-para-xylylene) films using an $O_2$ gas. Effects of process parameters on etch rates were investigated and are discussed in this article from the standpoint of plasma parameter measurements, performed using a Langmuir probe and modeling calculation. Process parameters of interest include ICP source power and pressure. It was shown that major etching agent of polymer films was oxygen atoms O($^3P$). At the same time it was proposed that positive ions were not effective etchant, but ions played an important role as effective channel of energy transfer from plasma towards the polymer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.863-865
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• 2001

In this study, RuO$_2$thin films were etched in inductively coupled $O_2$plasma. Etching characteristics of RuO$_2$thin films including etch rate and selectivity were evaluated as a function of rf power in $O_2$plasma and gas mixing ratio in $O_2$/Ar plasma. In $O_2$ plasma, the etch rate of RuO$_2$thin film increases as rf power increases. In $O_2$/Ar plasma, the etch rate of RuO$_2$thin film increases up to 10% Ar, but decrease with furthermore increasing Ar mixing ratio. The enhanced etch rate can be obtained with increasing rf power and small addition of Ar gas.

• Ocean and Polar Research
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• v.25 no.1
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• pp.53-62
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• 2003

Inductively coupled plasma mass spectrometry (ICP-MS) is useful instrument for determining abundance of rare earth elements, due to very low detection limits and rapid data acquisition. In this article, two methods are used for decomposition of alkaline rocks; close vessel acid digestion and $Na_2Co_3$ fusion. The two analytical results show good agreements. Considering total dissolved solids and detection limits, the most adequate dilution factor is 5,000 times. Polyatomic ion interferences during analysis can give rise to Inaccuracies. After correction from oxide and hydroxide interference, the analytical result show 20-30% decrease for Gd and Tm, 10-20% decrease for Tb and Er. In comparing the analytical results from KORDI with other institutes, most rare earth elements abundance show good agreements except Lu.

• Analytical Science and Technology
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• v.8 no.4
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• pp.405-410
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• 1995

A study on elemental speciation of trace metals in lake water (Lake Biwa in Japan) has been carried out by a size exclusion chromatography (SEC) / inductively coupled plasma mass spectrometry (ICP-MS) system. Before analysis, the water sample was preconcentrated with a ultrafiltration technique, where the large molecules with molecular weight larger than 10,000 were concentrated. Then the preconcentrated water samples (500-1000 fold) were analyzed by a SEC/ICP-MS system. Most trace metals were found at the UV absorption peaks corresponding to the molecular weights of ca. 300,000 and 10,000-50,000, where trace metals were on-line detected by ICP-MS. The results suggest that many of trace metals exist as the large organic molecules-metal complexes in natural water.