• Journal of Institute of Control, Robotics and Systems
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• v.14 no.6
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• pp.543-547
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• 2008

In the paper, we develop the ultrasonic bonding technique for LCD driver chips having small size and high pin-density. In general, the mounting technology for LCD driver ICs is a thermo-compression method utilizing the ACF (An-isotropic Conductive Film). The major drawback of the conventional approach is the long process time. It will be shown that the conventional ACF method based on thermo-compression can be remarkably enhanced by employing the ultrasonic bonding technique in terms of bonding time. The proposed approach is to apply the ultrasonic energy together with the thermo-compression methodology for the ACF bonding process. To this end, we design a bonding head that enables pre-heating, pressure and ultrasonic excitation. Through the bonding experiments mainly with LCD driver ICs, we present the procedures to select the best combination of process parameters with analysis. We investigate the effects of bonding pressure, bonding time, pre-heating temperature before bonding, and the power level of ultrasonic energy. The addition of ultrasonic excitation to the thermo-compression method reduces the pre-heating temperature and the bonding process time while keeping the quality bonding between the LCD pad and the driver IC. The proposed concept will be verified and demonstrated with experimental results.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.4
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• pp.478-483
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• 2014

We propose a new method which can extract the information about the electronic traps in the semi-insulating GaN buffer of AlGaN/GaN heterostructure field-effect transistors (HFETs) using a simple test structure. The proposed method has a merit in the easiness of fabricating the test structure. Moreover, the electric fields inside the test structure are very similar to those inside the actual transistor, so that we can extract the information of bulk traps which directly affect the current collapse behaviors of AlGaN/GaN HEFTs. By applying the proposed method to the GaN buffer structures with various unintentionally doped GaN channel thicknesses, we conclude that the incorporated carbon into the GaN back barrier layer is the dominant origin of the bulk trap which affects the current collapse behaviors of AlGaN/GaN HEFTs.

• Analytical Science and Technology
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• v.14 no.1
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• pp.28-33
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• 2001

The ion chromatography for the separation of plutonium species which are suggested to be $Pu^{3+}$, $Pu^{4+}$, $PuO_2{^+}$ and $PuO_2{^{2+}}$ in natural water was studied. Two separation methods were performed; 1) two-column method containing each of $SiO^-$ and SiO-$SO_3{^-}$ cation exchanger, 2) IC with AG11 column and the eluent of oxalate/nitric acid. Separation conditions for $Eu^{3+}$, $Th^{4+}$, $NpO_2{^+}$, $UO_2{^{2+}}$ in place of plutonium species were acquired from preliminary tests. When these conditions were applied to separate the plutonium species, two-column method was separated them successfully. However, the IC method with oxalate eluent was difficult in the separation of plutonium species due to the change of $Pu^{3+}$ and $PuO_2{^{2+}}$ to $Pu^{4+}$ and $PuO_2{^+}$ respectively.

• Electrical & Electronic Materials
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• v.10 no.6
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• pp.519-527
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• 1997

The micro crack was occurred where the stress concentrated by the thermal stress which was induced during the cooling period after molding process or by the various reliability tests. In order to estimate the possibility of development from inside micro crack to outside fracture, the fracture toughness of EMC should be measured under the various applicable condition. But study was conducted very rarely for the above area. In order to provide a was to decide the fracture resistance of EMC (Epoxy Molding Compound) of plastic package which is produced by using transfer molding method, measuring fracture is studied. The specimens were made with various EMC material. The diverse combination of test conditions, such as different temperature, temperature /humidity conditions, different filler shapes, and post cure treatment, were tried to examine the effects of environmental condition on the fracture toughness. This study proposed a way which could improve the reliability of LOC(Lead On Chip) type package by comparing the measured $J_{IC}$ of EMC and the calculated J-integral value from FEM(Finite Element Method). The measured $K_{IC}$ value of EMC above glass transition temperature dropped sharply as the temperature increased. The $K_{IC}$ was observed to be higher before the post cure treatment than after the post cure treatment. The change of $J_{IC}$ was significant by time change. J-integral was calculated to have maximum value the angle of the direction of fracture at the lead tip was 0 degree in SOJ package and -30 degree in TSOP package. The results FEM simulation were well agreed with the results of measurement within 5% tolerance. The package crack was proved to be affected more by the structure than by the composing material of package. The structure and the composing material are the variables to reduce the package crack.ack.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.24 no.10 s.181
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• pp.2405-2412
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• 2000

A cast stainless steel may experience an embrittlement when it is exposed to approximately 30$0^{\circ}C$ for long period. In the present investigation, The three classes of the thermally aged CF8M specimie n are prepared using an artificially accelerated aging method. Namely, after the specimen are held for 300, 1800 and 3600hrs. at 43$0^{\circ}C$ respectively, the specimens are quenched in water to room temperature. Load versus load line displacement curves and J-R curves are obtained using the unloading compliance method. $J_{IC}$ values are obtained following ASTM E 813-87 and ASTM E 813-81 methods. In addition to these methods, JIC values are obtained using SZW(stretch zone width) method described in JSME S 001-1981. The results of the unloading compliance method are $J_Q$=485.7 kJ/m$^2$ for virgin material, $J_{IC}$ of the degraded materials associated with 300, 1800 and 3600hrs are obtained 369.25 kJ/m$^2$, 311.02 kJ/m$^2$, 276.7 kJ/m$^2$, respectively. The results of SZW method are similar to those of the unloading compliance method. Through the elastic-plastic fracture toughness test, it is found that the value of $J_{IC}$ is decreased with increasing of the aging time. The results obtained through the investigation can provide reference data for a leak before break(LBB) of reactor coolant system of nuclear power plants.

• Archives of Pharmacal Research
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• v.10 no.1
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• pp.50-59
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• 1987

(E)-2-Phenylcyclopropylamine ((E)-TCP), (Z)-2-Phenylacyclopropylamine ((Z)-TCP), (E)-1-methyl-2-phenylcyclopropylamine ((E)-MTCP), and (Z)-1-methyl-2-phenylcyclopropylamine ((Z)-MTCP) were synthesized and used to determine to what extent 1-methylsubstitution and stereochemistry of 2-phenycyclopropylamines affect inhibition of monoamine oxidase (MAO). Inhibition of rat brain mitochondrial MAO-A and B by the compounds were measured using serotonin and benzylamine as the substrate, respectively and $IC_{50}$ values obtianed with 95% confidence limits by the method of computation. For the inhibition of MAO-A, (E)-MTPC ($IC_{50}$ = 6.2 * $10^{-8}$M) was found to be 37 times more potent than (Z)-MTCP ($IC_{50}$ = 7.8 * $10^{-8}$M), was 7 times more potent than (Z)-MTCP($IC_{50}$= 4.7 * $10^{-7}$M) and (E)-TCP($IC_{50}$ =7.8 * $10^{-8}$M),0.6 times as potent as (Z)- TCP ($IC_{50}$ = 4.4 * $10^{-8}$M). The results suggested that while without 1-methyl group, potency of a (Z)-isomer was comparable to that of (E)-isomer, the methyl group in its (Z)-position was very unfavorable to the inhibition of MAO and that in its (E)-position, the methyl group contributed positively to the potency as found by the fact that (E)-MTCP was 1-5 times more potent than (E)-TCP. In view of the selective inhibition of MAO-A- or B over MAO-A and 1-methyl substitution as well as the stereochemical factors did not significantly influence the selectivity.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.278-285
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• 1998

It was known that the C-IC transition in the mixed crystal $(A_{1-x}A^'_x)_2ZnCl_4$ is smeared out with increasing x, which is attributed to the pinning effect of the doped A' ions. In this study, we introduce a new mixed crystal system $K_2Zn_{1-X}Co_XCl_4$, where doped Co ions do not destroy the orientation of the polarization in C phase and preserve the long range ordering of IC phase. We grew a series of mixed crystals $K_2Zn_{1-X}Co_XCl_4$ for x=0, 0.001, 0.005, 0.01, 0.05, 0.1, 0.3, 0.5, 0.7, 1 by the Czochralski method and investigated the real composition of the mixed crystals, structure and the change of the C-IC phase transition with increasing x by the thermal analysis.

• Asia pacific journal of information systems
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• v.5 no.2
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• pp.79-100
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• 1995

Internal Control(IC) comprises the plan of organization and all of the coordinating methods and measures adopted in a business to safeguard its assets, check the accuracy and reliability of its accounting data, promote operational efficiency and encourage adherence to the prescribed managerial policies. If an organization's IC is not adequate, Accounting Information System (AIS) will be vulnerable to accomplish the organizations successes. Therefore, an effective and efficient IC is essential to its successes. The purpose of this study is to analyze the impact of EDP IC on the perceived usefulness of AIS. Do the general controls indirectively affect to the usefulness of AIS through th application controls? To solve these problems, a research model and a set of hypotheses were established and empirically tested. 60 financial institutions (banks, insurance companies, security companies) agreed to participate in the study. Data were gathered through structured interviews with 60 information systems managers and 537 users of accounting information of each company. Survey forms were designed and collected from financial institutions in Seoul. Information systems' managers of financial institutions responded to questionnaire(1) which consists of a series of 70 questions related to practice and perceived importance. Questionnaire (2) was received from 537 users, who responded to series of 17 questions related to the perceived usefulness. The results of analysis are summarized below. Effects of general controls are more direct on AIS's usefulness than those of application controls. Whereas, indirect effects of application controls are geater than those of general controls. Therefore, the greater the effects of application controls on general controls, the higher the perceived usefulness of AIS. In conclusion, this study supports that the perceived usefulness of AIS is affected by IC which are composed of general controls and application controls. The results of this study has significant implication to financial institution as computer fraud potential increases. Because of global competitions, financial institutions should restructure to IC and AIS in order to take advantage of the technological progress in Information System.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.345-348
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• 2000

In this paper, We described the procedures to generate an input-output buffer information specification (IBIS) model in digital IC circuits. We gives the method to describe IBIS standard I/O for the characteristics of I/O buffer and to represent its electrical characteristics. The parameters of I/O structure for I/O buffer modelling are also referred, and an IBIS model for CMOS, TTL IC, ROM and RAM constructed amounts about 216. This IBIS model can be used to the simulation of signal integrity of high speed circuits in a PCB level.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.1
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• pp.138-145
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• 1995

The offset voltage in silicon Hall plates is mainly caused by stress and strain in package, and by alignment in process. The offset voltage is appeared random for condition change with time in the factory, is non-linearly changed with temperature. In this paper proposed new method of design of Hall IC, and methematicaly proved relation layout of chip of 90$^{\circ}$-shift-current Hall plate pair is matched with "Differentail to single ended Conversion amplifier." In the experiment, the offset voltage is reduced about 1/100 time than the original offset voltage.