• 한국태양에너지학회:학술대회논문집
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• 2009.11a
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• pp.246-250
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• 2009

String & tabbing step in the crystalline PV module manufacturing process for the temperature directly affects solar cells. In fact, in the manufacture of PV modules tend to be temperature factor and the corresponding changes n the output shows the same characteristics. In this journal, it will be considered about thermal characteristics, especially changes of characteristic in high temperature of the solar cell through experiment that we measure electric output characteristics of solar cells after those are applied with high temperature changes for two seconds. And we can think about the possibility of efficiency improvements over looks in PV module manufacturing processes.

• Korean Journal of Materials Research
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• v.33 no.6
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• pp.229-235
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• 2023

An all-perovskite oxide heterostructure composed of SrSnO₃/Nb-doped SrTiO₃ was fabricated using the pulsed laser deposition method. In-plane and out-of-plane structural characterization of the fabricated films were analyzed by x-ray diffraction with θ-2θ scans and φ scans. X-ray photoelectron spectroscopy measurement was performed to check the film's composition. The electrical transport characteristic of the heterostructure was determined by applying a pulsed dc bias across the interface. Unusual transport properties of the interface between the SrSnO₃ and Nb-doped SrTiO₃ were investigated at temperatures from 100 to 300 K. A diodelike rectifying behavior was observed in the temperature-dependent current-voltage (IV) measurements. The forward current showed the typical IV characteristics of p-n junctions or Schottky diodes, and were perfectly fitted using the thermionic emission model. Two regions with different transport mechanism were detected, and the boundary curve was expressed by ln I = -1.28V - 13. Under reverse bias, however, the temperature- dependent IV curves revealed an unusual increase in the reverse-bias current with decreasing temperature, indicating tunneling effects at the interface. The Poole-Frenkel emission was used to explain this electrical transport mechanism under the reverse voltages.

• Journal of Broadcast Engineering
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• v.25 no.1
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• pp.25-35
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• 2020

Recently, the development of image processing technology, as well as hardware performance, has been continuing the research on 3D point processing technology that provides users with free viewing angle and stereoscopic effect in various fields. Point cloud technology, which is a type of representation of 3D point, has attracted attention in various fields because it can acquired/expressed point precisely. However, since Hundreds of thousands, millions of point are required to represent one 3D point cloud content, there is a disadvantage that a larger amount of storage space is required than a conventional 2D content. For this reason, the MPEG (Moving Picture Experts Group), an international standardization organization, is continuing to research how to efficiently compress, store, and transmit 3D point cloud content to users. In this paper, a V-PCC bitstream generated by a V-PCC (Video-based Point Cloud Compression) encoder proposed by the MPEG-I (Immersive) group is composed of an MPU (Media Processing Unit) defined by the MMT. In addition, by extending the signaling message defined in the MMT standard, a parameter for a segmented transmission method of the 3D point cloud content by area and quality parameters considering the characteristic of the 3D point cloud content, so that the quality parameters can be selectively determined according to the user's request. Finally, in this paper, we verify the result through design/implementation of the verification platform based on the proposed technology.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.5
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• pp.341-344
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• 2018

In order to achieve a high efficiency for the silicon solar cell, a passivation characteristic that minimizes the electrical loss at a silicon interface is required. In this paper, we evaluated the applicability of the oxide film formed by ozone for the tunnel silicon oxide film. To this end, we fabricated the silicon oxide film by changing the condition of ozone oxidation and compared the characteristics with the oxide film formed by the existing nitric acid solution. The ozone oxidation was formed in the temperature range of $300{\sim}500^{\circ}C$ at an ozone concentration of 17.5 wt%, and the passivation characteristics were compared. Compared to the silicon oxide film formed by nitric acid oxidation, implied open circuit voltage (iVoc) was improved by ~20 mV in the ozone oxidation and the ozone oxidation after the nitric acid pretreatment was improved by ~30 mV.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.881-885
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• 2004

We report a method for making a device on which semi-conducting single-walled carbon nanotubes are attached selectively between two metal electrodes. This method is divided two processes. First we can connect a rope of single-walled carbon nanotubes(SWNTs) between two electrodes using the electric field. But a SWNTs' rope obtained by the first process was composed of a few of metallic and semi-conducting SWNTs together. The second process is to burn the metallic and semi-conducting nanotubes through applying a voltage. As a result, we can obtain a semi-conducting SWNT device. To make the patterned electrodes, we deposited $SiO_2$(150nm) on a wafer. After then, we made a patterned samples with Ti(200 $\AA$)/Au(300$\AA$). We empirically obtained a electric condition 0.66 $V_{pp}$ /${\mu}{\textrm}{m}$@5MHz. From this result, we verified that most of current go through the metallic nanotubes in this device. When we apply DC voltage between two electrodes, the metallic carbon nanotubes are burnt. Finally, we can obtain a semi-conducting nanotube device which we desire to make. We got the I-V characteristic graph which has shown the semi-conducting property. We hope to apply to the various applications using this selective semi-conducting carbon nanotube deposition method.ethod.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05e
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• pp.89-91
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• 2003

In this paper, using a Langmuir probe Ar gas characteristic of electrodeless fluorescent lamp which used an inductively coupled plasma were investigated. The RF output changed into 5-50W in 13.56MHz. At this time internal plasma voltage of the chamber and probe current were measured while changing in -70V - +70V with a supply voltage by Langmuir probe. If pressure of Ar gas was increased, the electric current tended to decrease. Also, an electric current was increased according to an increase of a RF output.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.146-146
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• 2010

Electrical properties of Large-grain-size TIT with 7/7 ${\mu}m$ channel width and length which gate insulator is made of 20nm $SiO_2$ and 80nm $SiN_x$. was fabricated and measured with Large-grain-size technic(MICC) and compared to ELA technic's data. The field-effect mobility was decreased from 106.78 to $88.74\;cm^2$/Vs and threshold voltage also decreased from -1.8382 to -0.9529 V, when TFT process is changed from ELA technic to MICC technic. Subthreshold swing, also, increased from 0.22 to 0.32 V/dec and $I_{on/off}$ ratio decreased from $1.12{\times}10^8$ to $5.75{\times}10^7$.

• Journal of the Korean Solar Energy Society
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• v.36 no.5
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• pp.63-71
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• 2016

Installed PV module in field is affected by shading caused by various field environmental factors. Bypass diodes are installed in PV module for preventing a power loss and degradation of PV module by shading. But, Bypass diode is easily damaged by surge voltage and has often initial a defect. This paper propose the electric characteristic variation and the power prediction of PV module with damaged bypass diode. Firstly, the resistance for normal bypass diode and damaged bypass diode of resistance was measured by changing the current. When the current increases, the resistance of normal bypass diode is almost constant but the resistance of damaged bypass diode increases. Next, To estimate power of PV module by damaged bypass diode, the equation for the current is derived using solar cell equivalent circuit. Finally, the derived equation was simulated by using MatLab tools, was verified by comparing experimental data.

• 한국초전도학회:학술대회논문집
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• v.12
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• pp.22-22
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• 2002

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.88-95
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• 1992

Abstract-Using a high resolution low energy electron diffraction(HRLEED), we report an exponent study of 2d continuous phase transition from an ordered ~ ( 2 x 1 )ox ygen overlayer on a W(110) surface. Temperature dependence of a (% 0) superlattice diffraction spot, characteristic of the p(2X 1) structure, shows power-law like divergence of the susceptibility and the fluctuation correlation length at T,=708.765 K. By fitting the intensities as well as the line-shapes, we obtained exponents P=0.19* 0.05, y=1.48+ 0.34, v= 1.23i 0.27 and q=0.38+ 0.12. The non-universal character of the exponents are understood in terms of a 2d XY model with cubic anisotropy as suggested previously.