• Korean Journal of Materials Research
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• v.26 no.8
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• pp.422-426
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• 2016

With the increase in installed solar energy capacity, comparison and analysis of the physical property values of solar cells are becoming increasingly important for production. Therefore, research on determining the physical characteristic values of solar cells is being actively pursued. In this study, a diode equation, which is commonly used to describe the I-V behavior and determine the electrical characteristic values of solar cells, was applied. Using this method, it is possible to determine the diode ideality factor (n) and series resistance ($R_s$) based on light I-V measurements. Thus, using a commercial screen-printed solar cell and an interdigitated back-contact solar cell, we determined the ideality factor (n) and series resistance ($R_s$) with a modified diode equation method for the light I-V curves. We also used the sun-shade method to determine the ideality factor (n) and series resistance ($R_s$) of the samples. The values determined using the two methods were similar. However, given the error in the sun-shade method, the diode equation is considered more useful than the sun-shade method for analyzing the electrical characteristics because it determines the ideality factor (n) and series resistance ($R_s$) based on the light I-V curves.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.233-236
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• 1999

To investigate the effect of interference current between pairs and quasi-particles, we have calculated the change I-V characteristic curve of resistively and capacitively shunted Josephson junction with external microwave by simulation of modified Stewart-McCumber model. Such rf-induced constant-voltage steps and the immunity against to noise were found to be changed in the presence of interference current.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.433-433
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• 2010

A microplasma current switch (MPCS) for a device operated in a current mode like organic light-emitting diodes (OLEDs), which features matrix addressability and current switching, is presented as well as its architecture and operational principle. The MPCS utilizes the intrinsic memory and conductivity of plasmas to achieve matrix addressability and current switching. We have fabricated a $100\;mm\;{\times}\;100\;mm$ MPCS panel in which its cell pitch is $1080\;{\mu}m\;{\times}\;1080\;{\mu}m$. The matrix addressability and current switching were verified. In addition, the current-voltage (I-V) characteristic of the unit cell was measured when plasmas were ignited. In principle, the scheme of the MPCS is equivalent to that of a double Langmuir probe diagnosing plasma parameters except for their relative dimensions to a plasma volume. Accordingly, the I-V characteristic was analyzed by a double Langmuir probe theory, and the plasma density and electron temperature were estimated from the I-V curve using a collisional double Langmuir probe theory.

• Journal of the Semiconductor & Display Technology
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• v.21 no.3
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• pp.135-139
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• 2022

The current-voltage modeling plays an important role in characterizing photovoltaic systems. A solar cell has a nonlinear characteristic with various parameters influenced by the external environments such as the irradiance and the temperature. In order to accurately predict current-voltage characteristics at low irradiance, the artificial neural networks are applied to effectively quantify nonlinear behaviors. In this paper, a multi-layer perceptron scheme that can make accurate predictions is employed to learn complex formulas for large amounts of continuous data. The simulated results of artificial neural networks model show the accuracy improvement by using MATLAB/Simulink.

• Proceedings of the Korea Society for Energy Engineering kosee Conference
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• 2010.04a
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• pp.172-172
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• 2010

• Journal of IKEEE
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• v.17 no.3
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• pp.221-228
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• 2013

About functional parameters of a LED/UVLED (Light Emitting Diode/Ultra Violet LED), one of the most important parameters is the I-V characteristic. By researching factors affect to the I-V characteristic of uvled, we found that beside of the structure of the device itself, there is the influence of the electrode materials, electrode shapes, the process of wiring and packaging. In this work, we want to improve the performance of UVLED to find out the optimal mask design principles. The study is based on theoretical mathematical models, as well as the use of simulation software tool Comsol. From all results obtained, the team has improved mask design to manufacture electrodes for GaN-based UVLED. Electrode masks are designed by three softwares, which are Intellisuite, Klayout and AutoCad. Intellisuite masks would be used in fabrication simulation while Klayout and AutoCad are used to fabricate electrodes in experiments. As well as, we silmulated the structure of an uvled 355nm emission wavelength by TCAD software, in order to compare with uvled sample that has the same emission wavelength.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.3
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• pp.407-412
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• 2012

This study investigated the process of thermal-induced growth of micro-crack developed at the crystalline solar cell using EL image, determined the output characteristic according to the pattern of micro-crack, analyzed the I-V characteristic according to the pattern of crack growth, and predicted the output value using simulation. The purpose of this study was, therefore, to investigate the process of thermal-induced growth of micro-crack developed at the early stage of PV module completion using EL image, to analyze the resulting decrement of output and predict the output value using simulation. It was observed that the crack grew increasingly by the thermal condition, and accordingly the lowering of output was accelerated. The output values of crack patterns with various direction were predicted using simulation, resulting in close I-V curve with only around 4% of error rate. It is considered that it is possible to predict the electric characteristic of solar cell module using only pattern of micro-crack occurred at solar cell based on our results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.10
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• pp.931-937
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• 2003

The principle of the superconducting vortex flow transistor (SVFT) is based on control of the Abrikosov vortex flowing along a channel. The induced voltage is controlled by a bias current and a control current, instead of external magnetic field. The device is composed of parallel weak links with a nearby current control line. We explained the process to get an I-V characteristic equation and described the method to induce the external and internal magnetic field by the Biot-Savarts law in this paper. The equation can be used to predict the I-V curves for fabricated device. From the equation we demonstrated that the current-voltage characteristics were changed with input parameters. I-V characteristics were simulated to analyze a SVFT with multi-channel by a computer program.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1919-1921
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• 1999

AlN thin films were fabricated by sputter for the application of MIS device with Al/AlN/Si structure. We controled that sub-temperature room-temperature. Sputtering pressure 5 mTorr, flow ratio Ar:$N_2$=1:1(4sccm:4sccm), and appended hydrogen gas $0{\sim}5%$. AlN thin films thickness fabricated to maintain $2700{\AA}$ time control. Before the experiment remove to the contaminated material use the Ultrasonic every 10 minute use the acetone and ethanol, then use the HF remove oxide-substance at 10 second. To analyze characteristic of the $H_2$ gas addition period, C-V and I-V characteristic make and experiment $H_2$ gas at addition period progressive capability of I-V and C-V characteristic.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.1
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• pp.59-65
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• 2012

A study on the electrical characteristic analysis of solar cell diodes under experimental conditions of varying temperature and frequency has been conducted. From the current-voltage (I-V) measurements, at the room temperature, we obtained the ideality factor (n) for Space Charge Region (SCR) and Quasi-Neutral Region (QNR) of 3.02 and 1.76, respectively. Characteristics showed that the value of n (at SCR) decreases with rising temperature and n (at QNR) increases with the same conditions. These are due to not only the sharply increased SCR current flow but the activated carrier recombination in the bulk region caused by defects such as contamination, dangling bonds. In addition, from the I-V measurements implemented to confirm the junction uniformity of cells, the average current dispersion was 40.87% and 10.59% at the region of SCR and QNR, respectively. These phenomena were caused by the pyramidal textured junction structure formed to improve the light absorption on the device's front surface, and these affect to the total diode current flow. These defect and textured junction structure will be causes that solar cell diodes have non-ideal electrical characteristics compared with general p-n junction diodes. Also, through the capacitance-voltage (C-V) measurements under the frequency of 180 kHz, we confirmed that the value of built-in potential is 0.63 V.