• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.89-90
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• 2008

본 연구에서는 PECVD(Plasma Enhanced CVD) 에서 사용하는 유해 가스인 $SiH_4$ 대신에 유기 사일렌 반응 물질인 TEOS(Tetraethyl Orthosilicate, Si$(OC_2H_5)_4)$를 이용하여 상압 화학 기상 증착법 (Atmospheric Pressure CVD, APCVD)으로 실리콘 산화막을 증착하고 박막의 조성과 특성 및 화학적, 전기적 특성들을 살펴보았다. TEOS 반응원료를 이용한 CVD 공정에서 공정 온도를 낮추기 위한 방법으로 강력한 산화제인 오존을 이용하여 공정온도를 $400^{\circ}C$이하로 낮췄으며, 유리기판 상의 ELA(Excimer Laser Annealing)처리된 다결정 실리콘 기판에 트랜지스터 소자를 제작하고, 게이트 절연막으로의 전기적 특성을 살펴보았다.

• Journal of the Korean Institute of Telematics and Electronics
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• v.11 no.1
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• pp.8-14
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• 1974

Investigation of the electrical properties of GaAs after the heat treatment at various As vapor pressure have been carried out. Hall coefficient mesurments were utilized to study the cause of the effect on the electrical properties, of GaAa by the heat treatment. Various defects possibly created by the heat treatment were discussed. Also, p-n GaAs diodes were fabricated and the I-V characteristic curves were presented.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1473-1475
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• 2002

This study presents the dielectric properties of $Ta_2O_5$ MIM capacitor structure processed by thermal oxidation. The AES(auger electron emission) depth profile showed thermal oxidation effect gives rise to the $O_2$ deficiened into the new layer. The leakage current density respectively, at $1{\sim}3{\times}10^{-3}$(kV/cm) were $3{\times}10^{-4}-10^{-8}(A/cm^2)$. Leakage current density behavior is stable irrespective of applied electric field, the frequency va capacitance characteristic enhanced stability. The capacitance vs voltage measurement that, $V_{fb}$(flat-band voltage) was increase dependance on the thin films thickness, it is changed negative to positive.

• Proceedings of the KIEE Conference
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• 1987.11a
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• pp.283-285
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• 1987

Transient conduction current (I - t characteristics) were measured in thin PPMMA (plasma-polymerized methyl methacrylate) films over the temperature range $60^{\circ}C-140^{\circ}C$ and the applied voltage range 3V - 30V. The current, which increased with temperature rise at constant applied voltage, showed less absorption current (current decay with time) at higher temperature region compared with those at lower temperature region. And the current, which increased with applied voltage rise at the constant temperature, showed less absorption current at higher voltage compared with those at lower voltage. The electric field current density characteristic curves were abtained from the conduction current values were after applying voltage for 30 minutes. And transient conduction currents were analyzed with high field conduction theories.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.134-139
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• 1998

Amorphous fluorocarbon (a-C:F) is of interest for low dielectric interlayer material, but in this work we applied this material to FED field emitter. N-doped a-C:F films were deposited by inductively coupled plasma chemical vapor deposition (ICPCVD). The Raman spectra were measured to study the film structure and inter-band optical absorption coefficients were measured using Perkin-Elmer UV-VIS-IR spectrophotometer and optical band gap was obtained using Tauc's plot. XPS spectrum and AFM image were investigated to study bond structure and surface morphology. Current-electric field(I-E) characteristic of the film was measured for the characterization of electron emission properties. The optimum doping concentration was found to be [N2]/[CF4]=9% in the gas phase. The turn-on field and the emission current density at $[N_2]/[CF_4]$=9% were found to be 7.34V/$\mu\textrm{m}$ and 16 $\mu\textrm{A}/\textrm{cm}^2$ at 12.8V/$\mu\textrm{m}$, respectively.

• Proceedings of the KIPE Conference
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• 2014.07a
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• pp.223-224
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• 2014

본 논문에서는 연료전지용 전력변환장치 설계에 필요한 연료전지의 수학적 모델링과 이에 기초한 하드웨어 시뮬레이터(APL)에 대하여 설명한다. 지금까지 사용되어 왔던 일반적인 DC 전압원 대신에 연료전지의 비선형 전원 특성을 고려할 수 있는 모의 실험에서 사용할 수 있는 연료전지 모델링에 관하여 설명한다. 연료전지는 화학적인 에너지를 전기적인 에너지로 변환하는 장치로써 개질기를 사용하여 수소를 지속적으로 공급해야 하는 등 실험실에서 실제 운전하는데 많은 어려움을 가지고 있다. 이런 어려움을 보완할 수 있는 모의전원장치(APL)을 사용하여 연료전지의 I-V 및 P-V 곡선의 전기적 비선형 특성을 제공함으로써 연료전지용 제어기 및 전력변환장치 설계가 보다 더 현실적일 수 있도록 하는데 도움이 될 것으로 본다.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.1
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• pp.49-53
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• 2007

The direct methanol fuel cell (DMFC) is a promising power source for portable applications due to many advantages such as simple construction, compact design, high energy density, and relatively high energy-conversion efficiency. In this work, an electrochemical methanol sensor for monitoring the methanol concentration in direct methanol fuel cells was fabricated using a thin composite nafion membrane as the electrolyte. We have analyzed the I-V characteristic of the fabricated methanol sensor as a function of methanol concentration, catalyst electrode and platinum(Pt) thickness. The fabricated sensor was analyzed by I-V measurement with various methanol concentration. When we measured the sensor characteristics with 10nm Pt and at 1V, the current value was $1.30{\times}10^{-6}A,\;1.96{\times}10^{-6}A\;and\;2.80{\times}10^{-6} A$ for three methanol concentration of 1M, 2M and 3M, respectively. When the methanol concentration was fixed at 2M, the current value of the fabricated device with Pt layers of 5, 10 and 15 nm thickness was $3.06{\times}10^{-6}A,\;1.96{\times}10^{-6}A\;and\;1.00{\times}10^{-6}A$, respectively. These results lead us to the conclusion that when the methanol concentration increases, the output current increases and when the catalyst electrode become thinner, the current increase more. It showed that, the thinner the catalyst electrode, the more electrochemistry become activation.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.10
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• pp.123-129
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• 1996

LDD structure is widely accepted in fabricating short channel MOSFETs due to reduced short channel effect originated form lower drain edge electric field. However, modeling of the LDD device is troublesome because the analysis methods of LDD region known are either too complicated or inaccurate. To solve the problem, this paper presents a nonlinear resistance model for the LDD region based on teh fact that the electron mobility changes with positive gate bias because accumulation layer of electrons is formed at the surface of the LDD region. To prove the usefulness of the model, single source/drain and LDD nMOSFETs were fabricated with 0.35$\mu$m CMOS technolgoy. For the fabricated devices we have measured I$_{ds}$-V$_{gs}$ characteristics and compare them to the modeling resutls. First of all, we calculated channel and LDD region mobility from I$_{ds}$-V$_{gs}$ characteristics of 1050$\AA$ sidewall, 5$\mu$m channel length LDD NMOSFET. Then we MOSFET and found good agreement with experiments. Next, we use calculated channel and LDD region mobility to model I$_{ds}$-V$_{gs}$ characteristics of LDD mMOSFET with 1400 and 1750$\AA$ sidewall and 5$\mu$m channel length and obtained good agreement with experiment. The single source/drain device characteristic modeling results indicates that the cahnnel mobility obtained form our model in LDD device is accurate. In the meantime, we found that the LDD region mobility is governed by phonon and surface roughness scattering from electric field dependence of the mobility. The proposed model is useful in device and circuit simulation because it can model LDD device successfully even though it is mathematically simple.

• Current Photovoltaic Research
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• v.11 no.2
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• pp.39-43
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• 2023

Carrier-selective contacts (CSCs) solar cells are considerably attractive on highly efficient crystalline silicon heterojunction (SHJ) solar cells due to their advantages of high thermal tolerance and the simple fabrication process. CSCs solar cells require a hole selective contact (HSC) layer that selectively collects only holes. In order to selectively collect holes, it must have a work function characteristic of 5.0 eV or more when contacted with n-type Si. The VO_x, NiO_x, and CuI_x thin films were fabricated and analyzed respectively to confirm their potential usage as a hole-selective contact (HSC) layer. All thin films showed characteristics of band-gap engergy > 3.0 eV, work function > 5.0 eV and minority carrier lifetime > 1.5 ms.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.298.1-298.1
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• 2016

Two-dimensional materials have been received significant interest after the discovery of graphene due to their fascinating electronic and optical properties for the application of novel devices. However, graphene lack of certain bandgap which is essential requirement to achieve high performance field-effect transistors. Analogous to graphene materials, molybdenum disulfide ($MoS_2$) as one of transition-metal dichalcogenides family presents considerable bandgap and exhibits promising physical, chemical, optical and mechanical properties. Here we studied nonvolatile memory based on $MoS_2$ which is grown by chemical vapor deposition (CVD) method. $MoS_2$ growth was taken on $1.5{\times}1.5cm^2$ $SiO_2$/Si-substrate. The samples were analyzed by Raman spectroscopy, atomic force microscopy and X-ray photoelectron spectroscopy. Current-voltage (I-V) characteristic was carried out HP4156A. The CVD-$MoS_2$ was analyzed as few layers and 2H-$MoS_2$ structure. From I-V measurement for two metal contacts on CVD-$MoS_2$ sample, we found typical resistive switching memory effect. The device structures and the origin of nonvolatile memory effect will be discussed.