• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.1
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• pp.29-34
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• 2017

A CMOS-based temperature sensor is proposed for low-voltage and low-power on-chip thermal monitoring applications. The proposed temperature sensor converts a proportional to absolute temperature (PTAT) current to a PTAT frequency using an integrator and hysteresis comparator. In addition, it operates in the subthreshold region, allowing reduced power consumption. The proposed temperature sensor was fabricated in a standard 90 nm CMOS technology. Measurement results of the proposed temperature sensor show a temperature error of between -0.81 and $+0.94^{\circ}C$ in the temperature range of 0 to $70^{\circ}C$ after one-point calibration at $30^{\circ}C$, with a temperature coefficient of $218Hz/^{\circ}C$. Moreover, the measured energy of the proposed temperature sensor is 36 pJ per conversion, the lowest compared to prior works.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.1
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• pp.48-57
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• 2013

This paper presents a power management system of the dye-sensitized solar cell (DSSC) for ubiquitous sensor network (USN) applications. The charge pump with a luminance-controlled oscillator regulates the load impedance of the DSSC to track the maximum power point (MPP) under various light intensities. The low drop-out regulator with a hysteresis comparator supplies intermittent power pulses that are wide enough for USN to communicate with a host transponder even under dim light conditions. With MPP tracking, approximately 50% more power is harvested over a wide range of light intensity. The power management system fabricated using $0.13{\mu}m$ CMOS technology works with DSSC to provide power pulses of $36{\mu}A$. The duration of pulses is almost constant around $80{\mu}s$ (6.5 nJ/pulse), while the pulse spacing is inversely proportional to the light intensity.

• Journal of the Korean Society of Industry Convergence
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• v.24 no.5
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• pp.641-644
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• 2021

Wearable devices and IoT are being utilized in various fields, where all systems are developing in the direction of multi-functionality, low power consumption, and high speed. In this paper, we propose a DC -DC Step-down C onverter for IoT smart devices. The proposed DC -DC Step-down converter is composed of a control block of the power supply stage. It also consists of an overheat protection circuit, under-voltage protection circuit, an overvoltage protection circuit, a soft start circuit, a reference voltage circuit, a lamp generator, an error amplifier, and a hysteresis comparator. The proposed DC-DC converter was designed and fabricated using a Magnachip / Hynix 180nm CMOS process, 1-poly 6-metal, the measured results showed a good match with the simulation results.

• Journal of IKEEE
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• v.14 no.2
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• pp.51-57
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• 2010

A CMOS rail-to-rail high voltage buffer amplifier is proposed to drive the gamma correction reference voltage of large TFT LCD panels. It is operating by a single supply and only shows current consumption of 0.5mA at 18V power supply voltage. The circuit is designed to drive the gamma correction voltage of 8-bit or 10-bit high resolution TFT LCD panels. The buffer has high slew rate, 0.5mA static current and 1k$\Omega$ resistive and capacitive load driving capability. Also, it offers wide supply range, offset voltages below 50mV at 5mA constant output current, and below 2.5mV input referred offset voltage. To achieve wide-swing input and output dynamic range, current mirrored n-channel differential amplifier, p-channel differential amplifier, a class-AB push-pull output stage and a input level detector using hysteresis comparator are applied. The proposed circuit is realized in a high voltage 0.18um 18V CMOS process technology for display driver IC. The circuit operates at supply voltages from 8V to 18V.