• 제목/요약/키워드: Hysteresis Circuit

검색결과 89건 처리시간 0.02초

비접지형 멤리스터 에뮬레이터 회로 (Floating Memristor Emulator Circuit)

  • 김용진;양창주;김형석
    • 전자공학회논문지
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    • 제52권8호
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    • pp.49-58
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    • 2015
  • 본 연구에서는 $TiO_2$멤리스터와 동일한 동작특성을 갖는 멤리스터 에뮬레이터 회로를 비접지형 회로로 개발하였다. 대부분의 기존 멤리스터 에뮬레이터는 다른 멤리스터나 소자들과의 연결성을 고려하지 않은 접지 식으로 개발된 것들이다. 본 연구에서 개발한 멤리스터 에뮬레이터는 비접지식으로서, 출력 단을 접지할 필요가 없기 때문에 다른 소자들과 연결이 가능하여, 다양한 회로들과의 연결하여 동작을 확인하는데 사용할 수 있다. 개발한 멤리스터 에뮬레이터의 기능을 확인하기 위해서 저항과 직렬로 연결한 회로와 4개의 멤리스터 에뮬레이터를 직렬 및 병렬로 연결한 휘트스톤 브리지 회로를 구성하였다. 또한 이브리지 회로가 신경망 시냅스의 가중치 연산이 가능함을 보였다.

직렬 및 병렬연결 멤리스터 회로의 전기적 특성 해석 (Analysis of Electrical Features of Serially and Parallelly connected Memristor Circuits)

  • 람 카지 부다토키;마헤스워 사;김주홍;김형석
    • 대한전자공학회논문지SD
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    • 제49권5호
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    • pp.1-9
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    • 2012
  • 저항, 콘덴서, 및 인턱터와 함께 4의 회로 소자로 알려진 멤리스터가 개발되었으나, 아직 그 전기적 특성이 충분히 해석되지 않고 있다. 멤리스터들은 연결된 극성에 따라서 저항이 증가 혹은 감소하며, 직렬 혹은 병렬연결 형태에 따라서 그 동작 특성이 다양해진다. 본 연구에서는 HP의 $TiO_2$ 멤리스터를 모델로 하여 다양한 직 병렬회로에 대한 전기적 특성을 분석하였다. 이를 위해서 사인파 입력신호에 대해서 나타나는 전압-전류 간의 히스테르시스 루프의 다양한 모양을 분석하였다. 본 멤리스터 연구결과는 멤리스터 소자에 대한 특성 이해와 논리 회로 및 뉴런 셀에의 응용회로들의 특성을 분석하는데 유용하게 사용될 수 있다.

An Optimized Stacked Driver for Synchronous Buck Converter

  • Lee, Dong-Keon;Lee, Sung-Chul;Jeong, Hang-Geun
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제12권2호
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    • pp.186-192
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    • 2012
  • Half-rail stacked drivers are used to reduce power consumption of the drivers for synchronous buck converters. In this paper, the stacked driver is optimized by matching the average charging and discharging currents used by high-side and low-side drivers. By matching the two currents, the average intermediate bias voltage can remain constant without the aid of the voltage regulator as long as the voltage ripple stays within the window defined by the hysteresis of the regulator. Thus the optimized driver in this paper can minimize the power consumption in the regulator. The current matching requirement yields the value for the intermediate bias voltage, which deviates from the half-rail voltage. Furthermore the required capacitance is also reduced in this design due to decreased charging current, which results in significantly reduced die area. The detailed analysis and design of the stacked driver is verified through simulations done using 5V MOSFET parameters of a typical 0.35-${\mu}m$ CMOS process. The difference in power loss between the conventional half-rail driver and the proposed driver is less than 1%. But the conventional half-rail driver has excess charge stored in the capacitor, which will be dissipated in the regulator unless reused by an external circuit. Due to the reduction in the required capacitance, the estimated saving in chip area is approximately 18.5% compared to the half-rail driver.

전동차 출입문 구동을 위한 SRM용 C-dump 컨버터 Topology 특성 비교 (Characteristic Analysis of C-dump Converter Topology for SRM of Electric Multiple Unit Door Driving)

  • 윤용호
    • 전기학회논문지
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    • 제65권9호
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    • pp.1597-1604
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    • 2016
  • The speed at which the SRM (Switched Reluctance Motor) makes a transition from chopping control to single pulse operation. (i.e., low speed to high speed operation). It is unsatisfied with performance at all operational regimes. In this paper, the operational performance of SRM can be improved by using current hysteresis control method. This method maintains a generally flat current waveform. At the high speed, the current chopping capability is lost due to the development of the back-EMF. Therefore SRM operates in single pulse mode. By using zero-current switching and zero-voltage switching technique, the stress of power switches can be reduce in chopping mode. When the commutation from one phase winding to another phase winding, the current can be zero as fast as possible in this period because several times negative voltage of DC-source voltage produce in phase winding. This paper is compared to performance based on energy efficient C-dump converter topology and the proposed resonant C-dump converter topology. Simulation and experimental results are presented to verify the effectiveness of the proposed circuit.

전기 절연유 열화진단을 위한 3-단자식 전기용량 센서 개발 및 진단특성 평가 (Development and Evaluation of 3-terminal Type Capacitive Sensor for the Diagnosis of Electrical Insulating Oil)

  • 김주한;한상옥
    • 전기학회논문지P
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    • 제58권4호
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    • pp.476-482
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    • 2009
  • This paper describes the development of capacitive sensor for the diagnosis of liquid dielectrics, which is widely used as the electrical insulating oil of transformer, circuit breaker, cable and etc. To survey the dielectric properties of the virgin and aged electrical insulating oils, we utilized the highly precise measuring system, using the principle of cross capacitance. The measured properties were used to determine the design factors of the sensor. Then the factors were optimized with the help of computational analysis. To evaluate diagnosis by the sensor, we performed accelerated thermal aging test about electrical insulating oils. The condition of aged specimens were investigated by measurements of relative permittivity i.e. capacitance change by capacitive sensor. And to evaluate the hysteresis characteristics with the change of temperature, we constructed a testing system, which was composed with vacuum drying oven, oil chamber and measuring instruments, such as LCR meter, MUX and so forth. Through the results of this investigation, we confirmed the superior characteristics of the newly developed sensor.

고효율 마이크로파 무선 전력 수신 집적회로 설계 및 구현 (A Design of High Efficiency Microwave Wireless Power Acceptor IC)

  • 정원재;정효빈;김상규;장종은;박준석
    • 전기학회논문지
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    • 제62권8호
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    • pp.1125-1131
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    • 2013
  • Wireless power transmission technology has been studied variety. Recently, wireless power transmission technology used by resonance and magnetic induction field is applied to various fields. However, magnetic resonance and inductive coupling are have drawbacks - power transmission distance is short. Microwave transmission and accept techniques have been developed to overcome short distance. However, improvement in efficiency is required. This paper, propose a high-efficiency microwave energy acceptor IC(EAIC). Suggested EAIC is consists of RF-DC converter and DC-DC converter. Wide Input power range is -15 dBm ~ 20 dBm. And output voltage is boosted up to 5.5 V by voltage boost-up circuit. EAIC can keep the output voltage constant. Available efficiency of RF-DC converter is 95.5 % at 4 dBm input. And DC-DC efficiency is 94.79 % at 1.1 mA load current. Fully EAIC efficiency is 90.5 %.

공진형 C-dump컨버터에 의한 SRM의 고성능 운전 (High performance operation of SRM by Resonant C-dump Converter)

  • 정균하;윤용호;김세주;원충연;김영렬
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2004년도 전력전자학술대회 논문집(1)
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    • pp.28-32
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    • 2004
  • In this paper, the operational performance of SRM can be improved by using current hysteresis control method. This method maintains a generally flat current waveform. At the high speed, the current chopping capability is lost due to the development of the back-EMF. Therefore SRM operates in single pulse mode. By using zero-current switching and zero-voltage switching technique, the stress of power switches can be reduce in chopping mode. When the commutation from one phase winding to another phase winding, the current can be zero as fast as possible in this period because several times negative voltage of DC-source voltage produce in phase winding. This paper is compared to performance based on conventional C-dump converter topology and the proposed resonant C-dump converter topology Simulation and experimental results are presented to verify the effectiveness of the proposed circuit.

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BaMgF$_{4}$ 를 이용한 금속-강유전체박막-실리콘(MFS) 구조의 특성 (Properties of metal-ferroelectric thin film-silicon(MFS) structure using BaMgF$_{4}$)

  • 김광호;김제덕;유병곤
    • 전자공학회논문지A
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    • 제33A권5호
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    • pp.102-107
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    • 1996
  • Use of a rapid thermal annealing (RTA) technique is shown to improve the properties of metal-ferroelectric BaMgF$_{4}$-silicon structures. The fluoride film was deposited in an ultra-high vacuum system at asubstrate temperature of 300$^{\circ}C$. A post-deposition annelaing was conducted for 10 seconds at 600.deg. C in a vacuum of 0.1 Torr, using a home-made RTA apparatus. The results showed that the resistivity of the ferroelectric BaMgF$_{4}$ film from a typical value of 1-2${\times}10^{11}{\Omega}{\cdot}cm$ before the annealing to about 5${\times}10^{13}{\Omega}{\cdot}cm$ and reduce the interface state density of the BaMgF$_{4}$/Si interface to about 8${\times}10^{10}cm^{2}{\cdot}$eV. Ferroelectric hysteresis measurements using a sawyer-tower circuit yielded remanent polarization and coercive field values of about 0.5$\mu$C/cm$^{2}$ and 80 kV/cm, respectively. the typical remanent polarization of the BaMgF$_{4}$ films ont he (100) and (111) oreientated silicon wafers were 0.5 - 0.6 $\mu$C/cm$^{2}$ and that of th efilms on the (110) wafers was 1.2$^{\circ}C$/cm$^{2}$.

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RF 스퍼터링법을 이용한 $LiNbO_3/Si$구조의 전기적 및 구조적 특성 (Electrical and Structural Properties of $LiNbO_3/Si$ Structure by RF Sputtering Method)

  • 이상우;김광호;이원종
    • 한국전기전자재료학회논문지
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    • 제11권2호
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    • pp.106-110
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    • 1998
  • The $LiNbO_3$ thin films were prepared directly on Si(100) substrates by conventional RF magnetron spurttering system for nonvolatile memory applications. RTA(Rapid Thermal Annealing) treatment was performed for as-deposited films in an oxygen atmosphere at 600 $^{\circ}C$ for 60 s. The rapid thermal annealed films were changed to poly-crystalline ferroelectric nature from amorphous of as-deposition. The resistivity of the ferroelectric $LiNbO_3$ film was increased from a typical value of $1{\sim}2{\times}10^8{\Omega}{\cdot}cm$ before the annealing to about $1{\times}10^{13}{\Omega}{\cdot}cm$ at 500 kV/cm and reduced the interface state density of the $LiNbO_3/Si$ (100) interface to about $1{\times}10^{11}/cm^2{\cdot}eV$. Ferroelectric hysteresis measurements using a Sawyer-Tower circuit yielded remanent polarization ($P_r$) and coercive field ($E_c$) values of about 1.2 ${\mu}C/cm^2$ and 120 kV/cm, respectively.

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A Three-Phase High Frequency Semi-Controlled Battery Charging Power Converter for Plug-In Hybrid Electric Vehicles

  • Amin, Mahmoud M.;Mohammed, Osama A.
    • Journal of Power Electronics
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    • 제11권4호
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    • pp.490-498
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    • 2011
  • This paper presents a novel analysis, design, and implementation of a battery charging three-phase high frequency semi-controlled power converter feasible for plug-in hybrid electric vehicles. The main advantages of the proposed topology include high efficiency; due to lower power losses and reduced number of switching elements, high output power density realization, and reduced passive component ratings proportionally to the frequency. Additional advantages also include grid economic utilization by insuring unity power factor operation under different possible conditions and robustness since short-circuit through a leg is not possible. A high but acceptable total harmonic distortion of the generator currents is introduced in the proposed topology which can be viewed as a minor disadvantage when compared to traditional boost rectifiers. A hysteresis control algorithm is proposed to achieve lower current harmonic distortion for the rectifier operation. The rectifier topology concept, the principle of operation, and control scheme are presented. Additionally, a dc-dc converter is also employed in the rectifier-battery connection. Test results on 50-kHz power converter system are presented and discussed to confirm the effectiveness of the proposed topology for PHEV applications.