• Journal of the Korean Ceramic Society
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• v.38 no.10
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• pp.867-870
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• 2001

The carbon nanomaterials were prepared using the thermal chemical vapor deposition with ${C_2}{H_2}$ on the Ni-graphite mixture as a supported catalyst. The samples were identified by SEM, TEM, Raman spectroscopy, and the hydrogen storage measurement by electrochemical method was also carried out. The purity of carbon nanotube prepared using ground mixture was higher than that of unground one. Also, the amount of hydrogen storage of purified carbon nanomaterials was more than that of unpurified one.

• Current Photovoltaic Research
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• v.1 no.1
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• pp.27-32
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• 2013

We investigated the growth mechanism of amorphous-phase Si thin films in order to improve the film characteristics and circumvent photo-degradation effects by implementation of hot-wire chemical vapor deposition. Amorphous silicon thin films grown in a silane/hydrogen mixture can be decomposed by a resistive heat filament. The structural properties were observed by Raman spectroscopy, FTIR, SEM, and TEM. The electrical properties of the films were measured by photo-conductivity, dark-conductivity, and photo-sensitivity. The contents of Si-H and $Si-H_n$ bonds were measured to be 19.79 and 9.96% respectively, at a hydrogen flow rate of 5.5 sccm, respectively. The thin film has photo-sensitivity of $2.2{\times}10^5$ without a crystalline volume fraction. The catalyst behavior of the hot-wire to decompose the chemical precursors by an electron tunneling effect depends strongly on the hydrogen mixture rate and an amorphous Si thin film is formed from atomic relaxation.

• Journal of Surface Science and Engineering
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• v.31 no.3
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• pp.165-170
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• 1998

Deposition of diamond on silicon substrates has been performed by RF HPCVD (Helicon Plasma Chemical Vapor Deposition) from methane-hydrogen gas mixture. Growth properties and deposition condition conditions have been studies as functions of substrate temperature ($750^{\circ}C$~$850^{\circ}C$). Si p-type (100) wafers were used as a substrate. The chharecterizations of the gaind thin films by SEM, AFM and Raman seattring are diamond crystallites which include disordered graphit.

• Journal of Hydrogen and New Energy
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• v.21 no.1
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• pp.50-57
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• 2010

Stepwise production of syn-gas and hydrogen from methane on ferrite based media added with yttria-stabilized zirconia (YSZ) was carried out using a fixed bed infrared reactor. In this study, all M-ferrite (M=Co, Cu, Mn and Ni) media were prepared by co-precipitation method, and there the YSZ was added as a binder to improve thermal stability, reactivity, and resistance against carbon deposition. Most of the ferrite media containing YSZ showed the good redox property for temperature programmed reduction/oxidation (TPR/O) tests. Notably, the Cu-substituted ferrite medium with YSZ showed the great resistance against carbon deposition as well as the good reactivity for the stepwise production of syngas and hydrogen. Furthermore, it also showed the good durability without significant deactivation during five repeated cyclic tests.

• Journal of Surface Science and Engineering
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• v.50 no.2
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• pp.98-107
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• 2017

Pd-based membranes have been widely used in hydrogen purification and separation due to their high hydrogen diffusivity and infinite selectivity. However, it has been difficult to fabricate thin and dense Pd-based membranes on a porous stainless steel(PSS) support. In case of a conventional PSS support having the large size of surface pores, it was required to use complex surface treatment and thick Pd coating more than $6{\mu}m$ on the PSS was required in order to form pore free surface. In this study, we could fabricate thin and dense Pd membrane with only $3{\mu}m$ Pd layer on a new PSS support manufactured by metal injection molding(MIM). The PSS support had low surface roughness and mean pore size of $5{\mu}m$. Pd membrane were prepared by advanced Pd sputter deposition on the modified PSS support using fine polishing and YSZ vacuum filling surface treatment. At temperature $400^{\circ}C$ and transmembrane pressure difference of 1 bar, hydrogen flux and selectivity of $H_2/N_2$ were $11.22ml\;cm^{-2}min^{-1}$ and infinity, respectively. Comparing with $6{\mu}m$ Pd membrane, $3{\mu}m$ Pd membrane showed 2.5 times higher hydrogen flux which could be due to the decreased Pd layer thickness from $6{\mu}m$ to $3{\mu}m$ and an increased porosity. It was also found that pressure exponent was changed from 0.5 on $6{\mu}m$ Pd membrane to 0.8 on $3{\mu}m$ Pd membrane.

• Journal of IKEEE
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• v.23 no.3
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• pp.1033-1037
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• 2019

GaN-based sensors have been widely investigated thanks to its potential in detecting the presence of hydrogen. In this study, we fabricated hydrogen gas sensors with AlGaN/GaN heterojunction and investigated how the sensing performance to be affected by SiN surface passivation. The gas sensor employed a high electron mobility transistors (HEMTs) with 30 nm platinum catalyst as a gate to detect the hydrogen presence. SiN layer was deposited by inductively-coupled chemical vapor deposition as post-passivation. The sensors with SiN passivation exhibited hydrogen sensing characteristics with various gas flow rates and concentrations of hydrogen in inert background gas at $200^{\circ}C$ similar to the ones without passivation. Aside from quick response time for both sensors, there are differences in sensitivity and recovery time because of the existence of the passivation layer. The results also confirmed the dependence of sensing performance on gas flow rate and gas concentration.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.105-105
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• 2012

We have developed a photoemission-assisted plasma-enhanced chemical vapor deposition (PAPE-CVD) [1,2], in which photoelectrons emitting from the substrate surface irradiated with UV light ($h{\nu}$=7.2 eV) from a Xe excimer lamp are utilized as a trigger for generating DC discharge plasma as depicted in Fig. 1. As a result, photoemission-assisted plasma can appear just above the substrate surface with a limited interval between the substrate and the electrode (~10 mm), enabling us to suppress effectively the unintended deposition of soot on the chamber walls, to increase the deposition rate, and to decrease drastically the electric power consumption. In case of the deposition of DLC gate insulator films for the top-gate graphene channel FET, plasma discharge power is reduced down to as low as 0.01W, giving rise to decrease significantly the plasma-induced damage on the graphene channel [3]. In addition, DLC thickness can be precisely controlled in an atomic scale and dielectric constant is also changed from low ${\kappa}$ for the passivation layer to high ${\kappa}$ for the gate insulator. On the other hand, negative electron affinity (NEA) of a hydrogen-terminated diamond surface is attractive and of practical importance for PAPECVD, because the diamond surface under PAPE-CVD with H2-diluted (about 1%) CH4 gas is exposed to a lot of hydrogen radicals and therefore can perform as a high-efficiency electron emitter due to NEA. In fact, we observed a large change of discharge current between with and without hydrogen termination. It is noted that photoelectrons are emitted from the SiO2 (350 nm)/Si interface with 7.2-eV UV light, making it possible to grow few-layer graphene on the thick SiO2 surface with no transition layer of amorphous carbon by means of PAPE-CVD without any metal catalyst.

• Journal of Hydrogen and New Energy
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• v.8 no.4
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• pp.145-154
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• 1997

The $H_2$ and $H_2S$ sensing characteristics of Pd and Pd-Rh gate MOS sensor and the effect of Pd deposition condition on the hydrogen sensing performance of Pd gate MOS sensor was investigated. The increase of rf power and deposition temperature led to the decrease in the sensitivity and the initial response rate. The deposition temperature gave more effects on the decrease of the sensitivity and the initial response rate than the rf power. The sensitivity of Pd-Rh sensor gave better performance than pure Pd sensor. As the concentration of Rh in the gate increased, the sensitivity decreased. For Pd-Rh sensor, the sensitivity to $H_2$ was higher than that to $H_2S$. It was demonstrated that rf power, deposition temperature had an important role in the sensor performance.

• Korean Journal of Materials Research
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• v.11 no.7
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• pp.550-555
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• 2001

A diamond-like carbon(DLC) films were deposited on the borosilicate glass substrate by radio frequency plasma enhanced chemical deposition(rf-PECVD). The $methane(CH_4)-hydrogen(H_2)$ gas mixture was used as precursor gas. The morphologies, the structure and the optical properties of the DLC films were investigated by SEM, Raman and UV spectrometer. The deposition rate was slightly increased with the hydrogen concentration in the gas mixture and it maintained constant at over 25 sccm of the gas flow rate. The optical band gap calculated by UV spectra decreased with increase of deposition time and DC self bias, but that were not effected by hydrogen content. Most effective parameter on the transmittance of film was bias voltage, especially in the range of ultra violet and visible light.

• 한국연소학회:학술대회논문집
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• 2001.06a
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• pp.75-81
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• 2001

MCVD(modified chemical vapor deposition) used in making optical-fiber currently utilizes the hydrogen-oxygen burner as a energy supply source. To improve the productivity and to reduce the manufacturing cost of optical-fiber, a natural gas-oxygen burner has been developed. The manufacturing processes of optical-fiber consist of vapor deposition, collapse and drawing processes. Among these processes, the vapor deposition and the collapse processes are important in terms of improving the productivity and saving the production cost. The vapor deposition and collapse processes are performed by combustion heat and flame force supplied by a burner. So the flame force of the burner used in these processes is required to have an optimal and consistent value in order to allow uniform heating and collapse of quartz tube. In this regard, the momentum ratio of natural gas and oxygen has been optimally determined by modification of a burner and the inlet flow pass also has been modified.