• Applied Chemistry for Engineering
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• v.21 no.4
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• pp.435-439
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• 2010

Pt-$MoO_3$ electrodes were fabricated on ITO-coated glass by electrodeposition method using 20 mM hydrogen hexachloroplatinate ($H_2PtCl_6$) and 10 mM Mo-peroxo electrolyte. Deposition order was varied, and catalytic activities of synthesized electrodes were compared with that of pure Pt electrode. Scanning Electron Microscopy (SEM) was utilized to examine surface morphology. The crystallinity of synthesized films was analyzed by X-ray Diffraction (XRD), and the oxidation state of both the platinum and molybdenum were determined by X-ray Photoelectron Spectroscopy (XPS) analyses. The catalytic activity and stability for methanol oxidation were measured using cyclic voltammetry (CV) and chronoamperometry (CA) in a mixture of 0.5 M $H_2SO_4$ and 0.5 M $CH_3OH$ aqueous solution. $MoO_3$ electrodeposited on the surface of Pt showed much higher catalytic acitivity and stability than pure Pt electrode due to the good contact between Pt and $MoO_3$.

• Journal of Electrochemical Science and Technology
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• v.10 no.4
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• pp.424-432
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• 2019

Planar BiVO₄ and 3 wt% Mo-doped BiVO₄ (abbreviated as Mo:BiVO₄) film were prepared by the facile spin-coating method on fluorine doped SnO₂(FTO) substrate in the same precursor solution including the Mo precursor in Mo:BiVO₄ film. After annealing at a high temperature of 450℃ for 30 min to improve crystallinity, the films exhibited the monoclinic crystalline phase and nanoporous architecture. Both films showed no remarkably discrepancy in crystalline or morphological properties. To investigate the effect of surface passivation exploring the Al₂O₃ layer, the ultra-thin Al₂O₃ layer with a thickness of approximately 2 nm was deposited on BiVO₄ film using the atomic layer deposition (ALD) method. No distinct morphological modification was observed for all prepared BiVO₄ and Mo:BiVO₄ films. Only slightly reduced nanopores were observed. Although both samples showed some reduction of light absorption in the visible wavelength after coating of Al₂O₃ layer, the Al₂O₃ coated BiVO₄ (Al₂O₃/BiVO₄) film exhibited enhanced photoelectrochemical performance in 0.5 M Na₂SO₄ solution (pH 6.5), having higher photocurrent density (0.91 mA/㎠ at 1.23 V vs. reversible hydrogen electrode (RHE), briefly abbreviated as V_RHE) than BiVO₄ film (0.12 mA/㎠ at 1.23 V_RHE). Moreover, Al₂O₃ coating on the Mo:BiVO₄ film exhibited more enhanced photocurrent density (1.5 mA/㎠ at 1.23 V_RHE) than the Mo:BiVO₄ film (0.86 mA/㎠ at 1.23 V_RHE). To examine the reasons, capacitance measurement and Mott-Schottky analysis were conducted, revealing that the significant degradation of capacitance value was observed in both BiVO₄ film and Al₂O₃/Mo:BiVO₄ film, probably due to degraded capacitance by surface passivation. Furthermore, the flat-band potential (V_FB) was negatively shifted to about 200 mV while the electronic conductivities were enhanced by Al₂O₃ coating in both samples, contributing to the advancement of PEC performance by ultra-thin Al₂O₃ layer.

• Economic and Environmental Geology
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• v.43 no.5
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• pp.443-453
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• 2010

The Samsung gold-silver deposit consists of quartz veins that fill along the fault zone within Cretaceous shale and sandstone. Mineralization is occurred within fault-breccia zones and can be divided into two stages. Stage I is main ore mineralization and stage II is barren. Stage I is associated with wall-rock alteration minerals(sericite, pyrite, chlorite, quartz), rutile, base-metal sulfides(pyrrhotite, pyrite, sphalerite, chalcopyrite, galena), and electrum. Stage II occur quartz, calcite and pyrite. Fluid inclusion data indicate that homogenization temperatures and salinities of stage I range from 145 to $309^{\circ}C$ and from 0.4 to 12.4 wt.% NaCl, respectively. It suggests that hydrothermal fluids were cooled and diluted with the mixing of meteoric water. The main deposition of base-metal sulfides and electrum occurred as a result of cooling and dilution at temperature between $200^{\circ}C$ and $300^{\circ}C$. Sulfur(9.3~10.8‰) isotope composition indicates that ore sulfur was mainly derived from a magmatic source as well as the host rocks. The calculated oxygen[-2.3~0.9‰(quartz: 0.3‰, 0.9‰, calcite: -2.3‰)] and hydrogen[-86~-76‰(quartz: -86‰, -82‰, calcite: -76‰)] isotope compositions indicate that hydrothermal fluids may be meteoric origin with some degree of mixing of another meteoric water for paragenetic time.

• Applied Chemistry for Engineering
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• v.19 no.1
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• pp.1-16
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• 2008

Titanium dioxide ($TiO_2$) is one of the most researched semiconductor oxides that has revolutionised technologies in the field of environmental purification and energy generation. It has found extensive applications in heterogenous photocatalysis for removing organic pollutants from air and water and also in hydrogen production from photocatalytic water-splitting. Its use is popular because of its low cost, low toxicity, high chemical and thermal stability. But one of the critical limitations of $TiO_2$ as photocatalyst is its poor response to visible light. Several attempts have been made to modify the surface and electronic structures of $TiO_2$ to enhance its activity in the visible light region such as noble metal deposition, metal ion loading, cationic and anionic doping and sensitisation. Most of the results improved photocatalytic performance under visible light irradiation. This paper attempts to review and update some of the information on the $TiO_2$ photocatalytic technology and its accomplishment towards visible light region.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.399-399
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• 2013

Metal silicides는 Si 기반의microelectronic devices의 interconnect와 contact 물질 등에 사용하기 위하여 그 형성 mechanism과 전기적 특성에 대한 연구가 많이 이루어지고 있다. 이 중 Rare-earth(RE) silicides는 저온에서 silicides를 형성하고, n-type Si과 낮은 Schottky Barrier contact (~0.3 eV)을 이룬다. 또한 낮은 resistivity와 Si과의 작은 lattice mismatch, 그리고 epitaxial growth의 가능성, 높은 thermal stability 등의 장점을 갖고 있다. RE silicides 중 ytterbium silicide는 가장 낮은 electric work function을 갖고 있어 n-channel schottky barrier MOSFETs의 source/drain으로 주목받고 있다. 또한 Silicon 기반의 CMOSFETs의 성능 향상 한계로 인하여 germanium 기반의 소자에 대한 연구가 이루어져 왔다. Ge 기반 FETs 제작을 위해서는 낮은 source/drain series/contact resistances의 contact을 형성해야 한다. 본 연구에서는 저접촉 저항 contact material로서 ytterbium germanide의 가능성에 대해 고찰하고자 하였다. HRTEM과 EDS를 이용하여 ytterbium germanide의 미세구조 분석과 면저항 및 Schottky Barrier Heights 등의 전기적 특성 분석을 진행하였다. Low doped n-type Ge (100) wafer를 1%의 hydrofluoric (HF) acid solution에 세정하여 native oxide layer를 제거하고, 고진공에서 RF sputtering 법을 이용하여 ytterbium 30 nm를 먼저 증착하고, 그 위에 ytterbium의 oxidation을 방지하기 위한 capping layer로 100 nm 두께의 TiN을 증착하였다. 증착 후, rapid thermal anneal (RTA)을 이용하여 N2 분위기에서 $300{\sim}700^{\circ}C$에서 각각 1분간 열처리하여 ytterbium germanides를 형성하였다. Ytterbium germanide의 미세구조 분석은 transmission electron microscopy (JEM-2100F)을 이용하였다. 면 저항 측정을 위해 sulfuric acid와 hydrogen peroxide solution (H2SO4:H2O2=6:1)에서 strip을 진행하여 TiN과 unreacted Yb을 제거하였고, 4-point probe를 통하여 측정하였다. Yb germanides의 면저항은 열처리 온도 증가에 따라 감소하다 증가하는 경향을 보이고, $400{\sim}500^{\circ}C$에서 가장 작은 면저항을 나타내었다. HRTEM 분석 결과, deposition 과정에서 Yb과 Si의 intermixing이 일어나 amorphous layer가 존재하였고, 열처리 온도가 증가하면서 diffusion이 더 활발히 일어나 amorphous layer의 두께가 증가하였다. $350^{\circ}C$ 열처리 샘플에서 germanide/Ge interface에서 epitaxial 구조의 crystalline Yb germanide가 형성되었고, EDS 측정 및 diffraction pattern을 통하여 안정상인 YbGe2-X phase임을 확인하였다. 이러한 epitaxial growth는 면저항의 감소를 가져왔으며, 열처리 온도가 증가하면서 epitaxial layer가 증가하다가 고온에서 polycrystalline 구조의 Yb germanide가 형성되어 면저항의 증가를 가져왔다. Schottky Barrier Heights 측정 결과 또한 면저항 경향과 동일하게 열처리 증가에 따라 감소하다가 고온에서 다시 증가하였다.

• Korean Chemical Engineering Research
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• v.46 no.3
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• pp.619-625
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• 2008

The effects of thermal cycling on residual stresses in both inorganic passivation/insulating layer that is deposited by plasma enhanced chemical vapor deposition (PECVD) and organic thin film that is used as a bonding adhesive are evaluated by 4 point bending method and wafer curvature method. $SiO_2/SiN_x$ and BCB (Benzocyclobutene) are used as inorganic and organic layers, respectively. A model about the effect of thermal cycling on residual stress and bond strength (Strain energy release rate), $G_c$, at the interface between inorganic thin film and organic adhesive is developed. In thermal cycling experiments conducted between $25^{\circ}C$ and either $350^{\circ}C$ or $400^{\circ}C$, $G_c$ at the interface between BCB and PECVD $ SiN_x $ decreases after the first cycle. This trend in $G_c$ agreed well with the prediction based on our model that the increase in residual tensile stress within the $SiN_x$ layer after thermal cycling leads to the decrease in $G_c$. This result is compared with that obtained for the interface between BCB and PECVD $SiO_2$, where the relaxation in residual compressive stress within the $SiO_2$ induces an increase in $G_c$. These opposite trends in $G_cs$ of the structures including either PECVD $ SiN_x $ or PECVD $SiO_2$ are caused by reactions in the hydrogen-bonded chemical structure of the PECVD layers, followed by desorption of water.

• Applied Chemistry for Engineering
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• v.8 no.3
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• pp.543-549
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• 1997

The direct reaction of carbon dioxide($CO_2$) with butane($C_4H_{10}$) to obtain synthesis gas and hydrocarbon compounds have been studied on nickel loaded catalysts. In the reaction of $CO_2$ with $C_4H_{10}$, Ni loaded catalysts showed similar activity with Pt catalyst and Coke deposition on the catalyst was severe by dehydrogenation of butane. The main products were carbon monoxide and hydrogen, when alumina and Y type zeolite were used as a support. Instead, a great deal of aromatic hydrocarbons were obtained on the Ni loaded ZSM-5 catalyst. The conversion of $CO_2$ increased with the increasing molar ratio of $CO_2$/$C_4H_{10}$ on Ni/ZSM-5, Ni/NaY and Ni/alumina catalyst, but the conversion decreased again from the ratio of 2. The value of $CO_2$ conversion was the highest at the 5wt% of Ni loading on ZSM-5 catalyst. A part of cokes deposited on the catalysts diminished when only $CO_2$ gas or water steam flowed into the reactor. The coke deposited on the catalysts was very reactive and it may be an important intermediate for the carbon dioxide reforming reaction.

• Economic and Environmental Geology
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• v.32 no.5
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• pp.445-454
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• 1999

The Sanjeon Au-Ag deposit consists of three subparallel hydrothermal quartz-calcite veins which filled fault-related fractures (generally $N20^{\circ}$ to 35"W-trending and $70^{\circ}$ to $80^{\circ}$ SW-dipping) within quartz porphyry. The vein mineralization shows an apparent variation of mineral assemblages with paragenetic time: (1) early, white quartz + pyrite + arsenopyrite + brown sphalerite, (2) middle, white (vein) to clear quartz (vug) + base-metal sulfides + electrum + argentite, (3) late, calcite + pyrite + native silver. Mineralogic and fluid inclusion data indicate that gold-silver minerals were deposited at temperatures from 2l $0^{\circ}$ to $250^{\circ}$ with salinities of 4 to 5 wt. % equiv. NaCl and log fS2 values from -14.0 to -12.2 atm. The linear relationship between homogenization temperature and salinity data indicates that gold-silver deposition was a result of meteoric water mixing. Ore mineralization occurred at pressure conditions of about 70 bars, which corresponds to the mineralization depths of about 260 m to 700 m. There is a remarkable decrease of the calculated 1)180 values of water from 1.3 to -9.7%0 in hydrothermal fluid with increasing paragenetic time. This indicates a progressive increase of meteoric water influx in the hydrothermal system at the Sanjeon deposit. Oxygen-hydrogen, sulfur, and carbon isotope values of hydrothermal fluids indicate that the ore mineralization was formed largely from meteoric waters with the contribution of sulfur and carbon from a deep igneous source.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.122-122
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• 1999

Graphite with its advantages of high thermal conductivity, low thermal expansion coefficient, and low elasticity, has been widely used as a structural material for high temperature. However, graphite can easily react with oxygen at even low temperature as 40$0^{\circ}C$, resulting in CO2 formation. In order to apply the graphite to high temperature structural material, therefore, it is necessary to improve its oxidation resistive property. Silicon Carbide (SiC) is a semiconductor material for high-temperature, radiation-resistant, and high power/high frequency electronic devices due to its excellent properties. Conventional chemical vapor deposited SiC films has also been widely used as a coating materials for structural applications because of its outstanding properties such as high thermal conductivity, high microhardness, good chemical resistant for oxidation. Therefore, SiC with similar thermal expansion coefficient as graphite is recently considered to be a g행 candidate material for protective coating operating at high temperature, corrosive, and high-wear environments. Due to large lattice mismatch (~50%), however, it was very difficult to grow thick SiC layer on graphite surface. In theis study, we have deposited thick SiC thin films on graphite substrates at temperature range of 700-85$0^{\circ}C$ using single molecular precursors by both thermal MOCVD and PEMOCVD methods for oxidation protection wear and tribological coating . Two organosilicon compounds such as diethylmethylsilane (EDMS), (Et)2SiH(CH3), and hexamethyldisilane (HMDS),(CH3)Si-Si(CH3)3, were utilized as single source precursors, and hydrogen and Ar were used as a bubbler and carrier gas. Polycrystalline cubic SiC protective layers in [110] direction were successfully grown on graphite substrates at temperature as low as 80$0^{\circ}C$ from HMDS by PEMOCVD. In the case of thermal MOCVD, on the other hand, only amorphous SiC layers were obtained with either HMDS or DMS at 85$0^{\circ}C$. We compared the difference of crystal quality and physical properties of the PEMOCVD was highly effective process in improving the characteristics of the a SiC protective layers grown by thermal MOCVD and PEMOCVD method and confirmed that PEMOCVD was highly effective process in improving the characteristics of the SiC layer properties compared to those grown by thermal MOCVD. The as-grown samples were characterized in situ with OES and RGA and ex situ with XRD, XPS, and SEM. The mechanical and oxidation-resistant properties have been checked. The optimum SiC film was obtained at 85$0^{\circ}C$ and RF power of 200W. The maximum deposition rate and microhardness are 2$mu extrm{m}$/h and 4,336kg/mm2 Hv, respectively. The hardness was strongly influenced with the stoichiometry of SiC protective layers.

• Economic and Environmental Geology
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• v.41 no.1
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• pp.1-14
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• 2008

The Bongsang gold-silver deposit consists of quartz veins that fill along the fault Bone within Cretaceous andesitic lapilli tuff. Mineralization is occurred within fault-breccia zones and can be divided into two stages. Stage I which can be subdivided into early and late depositional stages is main ore mineralization and stage II is barren. Stage I began with deposition of wall-rock alteration minerals and base-metal sulfides, and was deposited by later native silver, Ag-bearing tetrahedrite, polybasite and base-metal sulfides such like pyrite, sphalerite, chalcopyrite and galena. Fluid inclusion data indicate that homogenization temperatures and salinities of stage I range from 137 to $336^{\circ}C$ and from 0.0 to 10.6 wt.% NaCl, respectively. It suggests that ore forming fluids were cooled and diluted with the mixing of meteoric water. Also, temperature and sulfur fugacity deduced mineral assemblages of late stage I are $<210^{\circ}C\;and\;<10^{-15.4}$ atm, respectively. Sulfur(3.4%o) isotope composition indicates that ore sulfur was mainly derived from a magmatic source as well as the host rocks. The calculated oxygen{2.9%o, 10.3%o(quartz: 7.9%o, 8.9%o, calcite: 2.9%o, 10.3%o)}, hydrogen(-75%o) and carbon(-7.0%o, -5.9%o) isotope compositions indicate that hydrothermal fluids may be meteoric origin with some degree of mixing of another meteoric water for paragenetic time.