• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.347-347
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• 2010

We designed a new experimental set-up for measuring activity of heterogeneously catalyzed reactions. Using this set-up, we studied reduction of carbon dioxide by carbon dioxide reforming of methane (CRM) using nickel powder as catalyst. The properties of the catalysts were characterized by X-ray diffraction (XRD), Brunauer, Emmett & Teller (BET) surface area and X-ray photoelectron spectroscopy (XPS) techniques. The reactivity experiments were performed in the temperature range of $300\;-\;500^{\circ}C$. At reactivity experiment, result showed consumption of $CO_2$ and $CH_4$ with a 1:1 stoichiometry. At the same time, carbon monoxide and hydrogen were produced, which could be used for synthesizing fuels such as methanol. During the reaction, deposition of carbon on Ni was observed, which caused deactivation of the catalyst.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.159-159
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• 2013

In this studying, we investigated the basic properties of N-doped plasma polymer. The N-doped plasma polymer thin films were deposited by radio frequency (13.56 MHz) plasma-enhanced chemical vapor deposition method. Various carbon-source were used as organic precursor with hydrogen gas as the precursor bubbler gas. Additionally, ammonia gas [NH3] was used as nitrogen dopant. The as-grown polymerized thin films were analyzed using cyclic voltammetry, ellipsometry, Fourier-transform infrared [FT-IR] spectroscopy, Raman spectroscopy, FE-SEM, and water contact angle measurement. Electronic property of N-doped plasma thin film is changed as flow rate of the NH3 gas.

• Journal of the Semiconductor & Display Technology
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• v.20 no.2
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• pp.34-42
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• 2021

Recent cleaning technologies of mask in extremely ultraviolet semiconductor processes were reviewed, focused on newly developed issues such as particle size determination or hydrocarbon and tin contaminations. In detail, critical particle size was defined and proposed for mask cleaning where nanosized particles and its various shapes would result in surface atomic ratio increase vigorously. A new cleaning model also was proposed with amphoteric behavior of electrolytically ionized water which had already shown excellent particle removing efficiency. Having its non-equilibrium and amphoteric properties, electrolyzed ion water seemed to oxidize contaminant surface selectively in nano-scale and then to lift up oxidized ones from mask surface very effectively. This assumption should be further investigated in future in junction with hydrogen bonding and cluster of water molecules.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.77-77
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• 2016

Thin films synthesized by plasma processes have been widely applied in a variety of industrial sectors. The structure control of thin film is one of prime factor in most of these applications. It is well known that the structure of this film is closely associated with plasma parameters and species of plasma which are electrons, ions, radical and neutrals in plasma processes. However the precise control of structure by plasma process is still limited due to inherent complexity, reproducibility and control problems in practical implementation of plasma processing. Therefore the study on the fundamental physical properties that govern the plasmas becomes more crucial for molecular scale control of film structure and corresponding properties for new generation nano scale film materials development and application. The thin films are formed through nucleation and growth stages during thin film depostion. Such stages involve adsorption, surface diffusion, chemical binding and other atomic processes at surfaces. This requires identification, determination and quantification of the surface activity of the species in the plasma. Specifically, the ions and neutrals have kinetic energies ranging from ~ thermal up to tens of eV, which are generated by electron impact of the polyatomic precursor, gas phase reaction, and interactions with the substrate and reactor walls. The present work highlights these aspects for the controlled and low-temperature plasma enhanced chemical vapour disposition (PECVD) of Si-based films like crystalline Si (c-Si), Si-quantum dot, and sputtered crystalline C by the design and control of radicals, plasmas and the deposition energy. Additionally, there is growing demand on the low-temperature deposition process with low hydrogen content by PECVD. The deposition temperature can be reduced significantly by utilizing alternative plasma concepts to lower the reaction activation energy. Evolution in this area continues and has recently produced solutions by increasing the plasma excitation frequency from radio frequency to ultra high frequency (UHF) and in the range of microwave. In this sense, the necessity of dedicated experimental studies, diagnostics and computer modelling of process plasmas to quantify the effect of the unique chemistry and structure of the growing film by radical and plasma control is realized. Different low-temperature PECVD processes using RF, UHF, and RF/UHF hybrid plasmas along with magnetron sputtering plasmas are investigated using numerous diagnostics and film analysis tools. The broad outlook of this work also outlines some of the 'Grand Scientific Challenges' to which significant contributions from plasma nanoscience-related research can be foreseen.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

• Applied Chemistry for Engineering
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• v.10 no.6
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• pp.843-847
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• 1999

In this research, C/SiC composites, i.e. activated carbon coated with SiC obtained from dichlorodimethylsilane(DDS) and hydrogen, have been made by chemical vapor infiltration(CVI) in a fluidized bed reactor. Activated carbons of sizes of 4~12, 12~20, and 20~40 mesh were used. After deposition the surface area, the amount and the shape of deposit of each sample were observed at different concentrations of reactant DDS, sizes of activated carbon, reaction pressures and reaction times. The experimental results showed that uniform deposition in the pores of sample was obtained at a lower concentration of DDS and a lower pressure. Additionally, from the observation that the pore diameter and the surface area have minimum values at a certain time of deposition, it was known that deposition occurred inside of the pore at first and then on the outside of particle. Small particles of SiC were deposited uniformly on the surface of activated carbon at lower DDS concentrations and lower reaction pressures. The results were confirmed by SEM, TGA, the pore size distribution analyzer and BET.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.120-120
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• 1998

Boron nitride (BN) films have attracted a growing interest for a variety of t technological applications due to their excellent characteristics, namely hardness, c chemical inertness, and dielectrical behavior, etc. There are two crystalline phases 1551; of BN that are analogous to phases of carbon. Hexagonal boron nitride (h-BN) has a a layered s$\sigma$ucture which is spz-bonded structure similar to that of graphite, and is t the stable ordered phase at ambient conditions. Cubic boron nitride (c-BN) has a z zinc blende structure with sp3-bonding like as diamond, 따ld is the metastable phase a at ambient conditions. Among of their prototypes, especially 삼Ie c-BN is an i interesting material because it has almost the same hardness and thermal c conductivity as di없nond. C Conventionally, significant progress has been made in the experimental t techniques for synthesizing BN films using various of the physical vapor deposition 밍ld chemical vapor deposition. But, the major disadvantage of c-BN films is that t they are much more difficult to synthesize than h-BN films due to its narrow s stability phase region, high compression stress, and problem of nitrogen source c control. Recent studies of the metalorganic chemical vapor deposition (MOCVD) of I III - V compound have established that a molecular level understanding of the d deposition process is mandatory in controlling the selectivity parameters. This led t to the concept of using a single source organometallic precursor, having the c constituent elements in stoichiometric ratio, for MOCVD growth of 삼Ie required b binary compound. I In this study, therefore, we have been carried out the growth of h-BN thin f films on silicon substrates using a single source precursors. Polycrystalline h-BN t thin films were deposited on silicon in the temperature range of $\alpha$)() - 900 $^{\circ}$C from t the organometallic precursors of Boron-Triethylamine complex, (CZHs)3N:BRJ, and T Tris(dimethylamino)Borane, [CH3}zNhB, by supersonic molecular jet and remote p plasma assisted MOCVD. Hydrogen was used as carrier gas, and additional nitrogen w was supplied by either aDlIDonia through a nozzle, or nitrogen via a remote plasma. T The as-grown films were characterized by Fourier transform infrared spectroscopy, x x-ray pthotoelectron spectroscopy, Auger electron spectroscopy, x-ray diffraction, t transmission electron diffraction, optical transmission, and atomic force microscopy.roscopy.

• Korean Chemical Engineering Research
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• v.55 no.2
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• pp.270-274
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• 2017

Formic acid has been known as one of key sources of hydrogen. Among various monometallic catalysts, hydrogen can be efficiently produced on Pd catalyst. However, the catalytic activity of Pd is gradually reduced by the blocking of active sites by CO, which is formed from the unwanted indirect oxidation of formic acid. One of promising solutions to overcome such issue is the design of alloy catalyst by adding other metal into Pd since alloying effect (such as ligand and strain effect) can increase the chance to mitigate CO poisoning issue. In this study, we have investigated formic acid deposition on the bimetallic $Pd/Pd_3Fe$ core-shell nanocatalyst using DFT (density functional theory) calculation. In comparison to Pd catalyst, the activation energy of formic acid dehydrogenation is greatly reduced on $Pd/Pd_3Fe$ catalyst. In order to understand the importance of alloying effects in catalysis, we decoupled the strain effect from ligand effect. We found that both strain effect and ligand effect reduced the binding energy of HCOO by 0.03 eV and 0.29 eV, respectively, compared to the pure Pd case. Our DFT analysis of electronic structure suggested that such decrease of HCOO binding energy is related to the dramatic reduction of density of state near the fermi level.

• Membrane Journal
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• v.14 no.3
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• pp.201-206
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• 2004

The stability of the prepared silica membrane by chemical vapor deposition (CVD) method in the HI-$H_2O$ gaseous mixture was evaluated aiming at the application for hydrogen iodide decomposition in the thermochemical IS process. Porous $\alpha$-alumina having pore size of 100 nm was modified by the different CVD temperature using tetraethoxysilane as the Si source. The CVD temperature was $700^{\circ}C$, $650^{\circ}C$, and $600^{\circ}C$. The $H_2$/H$_2$ selectivities of the modified membranes which were measured by single-component permeation experiment showed 43.2, 12.6, and 8.7 at $600^{\circ}C$ for the M1 (CVD temperature was $700^{\circ}C$), M2 (CVD temperature was $650^{\circ}C$) and M3 membranes (CVD temperature was $600^{\circ}C$), respectively. Stability experiment in the HI-$H_2O$ gaseous mixture was carried out at $450^{\circ}C$. The prepared silica membrane at $600^{\circ}C$ of CVD temperature was more stable than that at the other CVD temperature.

• Journal of the Korean Electrochemical Society
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• v.12 no.1
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• pp.47-53
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• 2009

In this study, highly ordered AAO (Anodic Aluminum Oxide) with nanopores was prepared by commercial grade Al substrate containing 3.5 wt.% impurities through two step anodizing method. Nanopores of prepared AAO arrays were used as templates for preparing nanofiber. $TiO_2$ was deposited by using DP (deposition-precipitation) method into AAO pores to grow nanofiber. Au particles were loaded on this $TiO_2$ nanofiber which was grown vertically. Prepared 2 wt.% $Au/TiO_2$ nanofiber was characterized by XRD, SEM and Raman. The crystal structure was analyzed by the XRD. SEM was used to observe pore size and pore wall thickness. Photocatalytic activity of co-oxidation was compared with $TiO_2$ and $Au/TiO_2$ nanofiber on AAO arrays.