• Journal of the Korean Ceramic Society
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• v.42 no.11 s.282
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• pp.729-736
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• 2005

HTGR (High Temperature Gas-cooled Reactor) is spotlighted to next generation nuclear power plant for producing the clean hydrogen gas and the electricity. In this study, the spherical $UO_3$ gel particles were prepared by the external gelation process, and the characteristics of these particles were analyzed the particle shape, composition of precipitate, and thermal decomposition characteristics with the Streoscope, FT-IR, and X-ray diffractometer. Raw material of the ADUN (Acid Deficient Uranyl Nitrate) solution, which has [$NO_3$]/[U] mole ratio = 1.75, was obtained from dissolution of the $U_{3}O_{8}$ powder with concentrated $HNO_3$, and its concentration is 3.5 M-U/l. The broth solution is prepared with the ADUN, urea, PVA, and THFA solution. The droplets of the broth solution was made through a nozzle system. From this study, we obtained the following results; 1) an externel chemical gelation process is a suitable method in the spherical $UO_3$ particle production, 2) the particle shape are changed by an urea mixing time, THFA volume, and the viscosity of the broth solution, 3) the amorphous $UO_3$ particles obtained from these experiments was converted to $U_{3}O_{8}$ and then $UO_2$ by heat treatment in hydrogen atmosphere at $600^{\circ}C$.

• Transactions of the Korean hydrogen and new energy society
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• v.27 no.6
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• pp.693-701
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• 2016

Steam gasification of low rank coals is possible at relatively low temperature and low pressure, and thus shows higher efficiency compared to high rank coals. In this study, the gasification reactivity of four different Indonesian low rank coals (Samhwa, Eco, Roto, Kideco-L) was evaluated in $T=700-800^{\circ}C$. The low rank coals containing $53.8{\pm}3.4$ wt% volatile matter in proximate analysis and $71.6{\pm}1.2$ wt% carbon in ultimate analysis showed comparable gasification reactivity. In addition, $K_2CO_3$ catalyst rapidly accelerated the reaction rate at $700^{\circ}C$, and all of the coals were converted over 90% within 1 hour. The XRD analysis showed no significant difference in carbonization between the coals, and the FT-IR spectrum showed similar functional groups except for differences due to moisture and minerals. TGA results in pyrolysis ($N_2$) and $CO_2$ gasification atmosphere showed very similar behavior up to $800^{\circ}C$ regardless of the coal species, which is consistent with the steam gasification results. This confirms that the indirect evaluation of the reactivity can be made by the above instrumental analyses.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.480-480
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• 2010

In the present work, we studied effect of the deposition parameters on the structure and properties of ZnO films deposited by DC arc plasmatron. The varied parameters were gas flow rates, precursor composition, substrate temperature and post-deposition annealing temperature. Vapor of Zinc acetylacetone was used as source materials, oxygen was used as working gas and argon was used as the cathode protective gas and a transport gas for the vapor. The plasmatron power was varied in the range of 700-1,500 watts. Flow rate of the gases and substrate temperature rate were varied in the wide range to optimize the properties of the deposited coatings. After deposition films were annealed in the hydrogen atmosphere in the wide range of temperatures. Structure of coatings was investigated using XRD and SEM. Chemical composition was analyzed using x-ray photo-electron spectroscopy. Sheet conductivity was measured by 4-point probe method. Optical properties of the transparent ZnO-based coatings were studied by the spectroscopy. It was shown that deposition by a DC Arc plasmatron can be used for low-cost production of zinc oxide films with good optical and electrical properties. Sheet resistance of 4 Ohms cm was achieved after the deposition and 30 min annealing in the hydrogen at $350^{\circ}C$. Elevation of the substrate temperature during the deposition process up to $350^{\circ}C$ leads to decreasing of the film's resistance due to rearrangement of the crystalline structure.

• Korean Journal of Materials Research
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• v.16 no.11
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• pp.681-686
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• 2006

Plasma nitrocarburising and plasma post oxidation were performed to improve the wear and corrosion resistance of S45C and SCM440 steel by a plasma ion nitriding system. Plasma nitrocarburizing was conducted for 3h at $570^{\circ}C$ in the nitrogen, hydrogen and methane atmosphere to produce the ${\varepsilon}-Fe_{2-3}$(N, C) phase. Plasma post oxidation was performed on the nitrocarburized samples with various oxygen/hydrogen ratio at constant temperature of $500^{\circ}C$ for 1 hour. The very thin magnetite ($Fe_3O_4$) layer $1-2{\mu}m$ in thickness on top of the $15{\sim}25{\mu}m$ ${\varepsilon}-Fe_{2-3}$(N, C) compound layer was obtained by plasma post oxidation. A salt spray test and electrochemical testing revealed that in the tested 5% NaCl solution, the corrosion characteristics of the nitrocarburized compound layer could be further improved by the application of the superficial magnetite layer. Throttle valve shafts were treated under optimum plasma processing conditions. Accelerated life time test results, using throttle body assembled with shaft treated by plasma nitrocarburising and post oxidation, showed that plasma nitrocarburizing and plasma post oxidation processes could be a viable technology in the very near future which can replace $Cr^{6+}$ plating.

• Korean Journal of Materials Research
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• v.8 no.4
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• pp.359-361
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• 1998

Visible photoluminescence(PU was observed from hydrogenated amorphous silicon deposited on silicon(a-Si : H/Si) using electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR- PECVD) with silane ($SiH_{4}$) gas as the reactant source. The PL spectra from a-Si : H/Si were very similar to those from porous silicon. Hydrogen contents of samples annealed under oxygen atmosphere for 2minutes at $500^{\circ}C$ by rapid thermal annealing were reduced to 1~2%, and the samples did not show visible PL, indicating that hydrogen has a very important role in the PL process of a- Si : H/Si. As the thickness of deposited a-Si : H film increased, PL intensity decreased. The visi¬ble PL from a-Si: H deposited on Si by ECR-PECVD with $SiH_{4}$ . is suggested to be from silicon hydrides formed at the interface between the Si substrate and the deposited a-Si : H film during the deposition.

• Journal of the Semiconductor & Display Technology
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• v.9 no.3
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• pp.53-58
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• 2010

In this study, we have investigated the effect of the ambient gases on the characteristics of IZO thin films for the OLED (organic light emitting diodes) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering under various ambient gases (Ar, $Ar+O_2$ and $Ar+H_2$) at $150^{\circ}C$. In order to investigate the influences of the oxygen and hydrogen, the flow rate of oxygen and hydrogen in argon mixing gas has been changed from 0.1sccm to 0.5sccm, respectively. All the samples show amorphous structure regardless of ambient gases. The electrical resistivity of IZO film increased with increasing flow rate of $O_2$ under $Ar+O_2$ while under $Ar+H_2$ atmosphere the electrical resistivity showed minimum value near 0.5sccm of $H_2$. All the films showed the average transmittance over 85% in the visible range. The OLED device was fabricated with different IZO substrates made by configuration of IZO/${\alpha}$-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show better current densityvoltage-luminance characteristics than that of OLED devices with the commercial crystalline-ITO (c-ITO) anode film. It can be explained that very flat surface roughness and high work function of a-IZO anode film lead to more efficient hole injection by reduction of interface barrier height between anode and organic layers. This suggests that a-IZO film is a promising anode materials substituting conventional c-ITO anode in OLED devices.

• Journal of the Korean Society of Safety
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• v.35 no.6
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• pp.85-92
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• 2020

Wet Scrubber reacts the incoming pollutant gas with cleaning water (water + absorbent) to absorb pollutants and release the clean air to the atmosphere. Wet scrubbers and packed tower scrubbers using this principle are widely used in businesses that emit acid gases. In particular, in the etching process using hydrochloric acid (HCl), alkaline washing water (NaOH) having a pH of about 8 to 11 is used to absorb a large amount of acid gas. However, These salts are attached to the injection nozzle (nozzle), filling material (packing), and the demister (Demister), causing air pollution, human damage, and inoperability due to clogging and acid gas discharge. Therefore, In this study, an improvement plan was proposed to manage the washing water with pH 3~4 acidic washing water. The test method takes samples from the Wet Scrubber flue measurement laboratory twice a month for 1 year. Hydrogen chloride (HCl) concentration (ppm) was measured, and nozzle clogging and scale conditions were measured, compared, and analyzed through a differential pressure gauge and a pressure gauge. As a result of the check, it was visually confirmed that the scale was reduced to 50% or less in the spray nozzle, filler, and demister. In addition, the emission limit of hydrogen chloride in accordance with the Enforcement Regulation of the Air Quality Conservation Act [Annex 8] met 3 ppm or less. Therefore, even if the washing water is operated in an acidic pH range of 3 to 4, it is expected to reduce air pollution and human damage due to clogging of internal parts, and it is expected to reduce maintenance costs such as regular cleaning or replacement of parts.

• Journal of the Semiconductor & Display Technology
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• v.22 no.1
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• pp.18-22
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• 2023

We have investigated the effect of the concentration of oxygen vacancies on the characteristics of Mo-doped ZnO (MZO) thin films for the TCO (transparent conducting oxide). For this purpose, MZO thin films were deposited by RF magnetron sputtering at different substrate temperature from room temperature to 300℃. The electrical resistivity of the MZO films decreases with increasing substrate temperature up to 100℃ and then gradually increases at higher temperatures. To investigate the influences of the ambient gases, the flow rate of oxygen and hydrogen in argon was varied from 0.1 sccm to 0.5 sccm. The MZO thin films were preferentially oriented to the (002) direction, regardless of the ambient gases used. The electrical resistivity of the MZO thin films increased with increasing O₂ flow rates, whereas the electrical resistivity decreased sharply under an Ar+H₂ atmosphere and was nearly the same, regardless of the H₂ flow rate used. As the oxygen vacancy concentration increases, the resistivity intended to decrease. In conclusion, Oxygen vacancy affects the MZO thin film's electrical characteristics. All the films showed an average transmittance of over 80% in the visible range.

• Resources Recycling
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• v.16 no.5
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• pp.8-12
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• 2007

Anhydrous magnesium chloride, dehydration product from magnesium chloride hydrate is a general raw material to prepare electrolytic magnesium. However, the dehydration is not trivial and can be accompanied by hydrolysis leading to the production of undesirable hydroxy chloride compounds of magnesium. Therefore, dehydration process is actually the most complicated and hardest in the electrolysis methods for the production of magnesium. In this work, the influence of dehydrating temperature has been studied at the temperature range from $200^{\circ}C$ to $600^{\circ}C$ in air and HCl gas atmosphere individually to compare the results. With increasing of dehydration temperature MgOHCl and MgO were obtained in air. On the other hand, when the temperature was increased above $300^{\circ}C$ anhydrous magnesium chlorides were prepared in HCl gas atmosphere. Anhydrous magnesium chloride was formed at near $300^{\circ}C$ and completely crystallized at about $500^{\circ}C$. All of the HCl used as atmosphere gas in the dehydration was recovered as hydrochloric acid solution at a water vessel up to 41% by weight at $20^{\circ}C$.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.1265-1268
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• 2005

In this study, the synthesis and semiconducting properties of cation and defect-doped $KTaO_3$ film is reported. $KTaO_3$ is an important material for optoelectronic and tunable microwave applications. It is an incipient ferroelectric with a cubic structure that becomes ferroelectric when doped with Nb. While numerous studies have investigated the thin-film growth of semiconducting perovskites, little is reported about semiconducting $KTaO_3$ thin films. In this work, the films were grown on (001) MgO single crystal substrates using pulsed-laser deposition. Semiconducting behavior is achieved by inducing oxygen vacancies in the $KTaO_3$ lattice via growth in a hydrogen atmosphere. The resistivity of semiconducting $KTaO_3:Ca$ films was as low as 10cm, and n-type semiconducting behavior was indicated. Hall mobility and carrier concentration were $0.27cm^2/Vs$ and $3.21018cm^{-3}$, respectively. Crystallinity and microstructure of the $KTaO_3:Ca$ films were examined using X-ray diffraction and field-emission scanning microscopy.