• Title/Summary/Keyword: Hydride Vapor Phase Epitaxy

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Growth of GaN on ZnO Substrate by Hydride Vapor-Phase Epitaxy (ZnO 기판 위에 Hydride Vapor-Phase Epitaxy법에 의한 GaN의 성장)

  • Jo, Seong-Ryong;Kim, Seon-Tae
    • Korean Journal of Materials Research
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    • v.12 no.4
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    • pp.304-307
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    • 2002
  • A zinc oxide (ZnO) single crystal was used as a substrate in the hydride vapor-phase epitaxy (HVPE) growth of GaN and the structural and optical properties of GaN layer were characterized by x- ray diffraction, transmission electron microscopy, secondary ion mass spectrometry, and photoluminescence (PL) analysis. Despite a good lattice match and an identical structure, ZnO is not an appropriate substrate for application of HVPE growth of GaN. Thick film could not be grown. The substrate reacted with process gases and Ga, being unstable at high temperatures. The crystallinity of ZnO substrate deteriorated seriously with growth time, and a thin alloy layer formed at the growth interface due to the reaction between ZnO and GaN. The PL from a GaN layer demonstrated the impurity contamination during growth possibly due to the out-diffusion from the substrate.

GaN Grown Using Ti Metal Mask by HVPE(Hydride Vapor Phase Epitaxiy) (HVPE(Hydride Vapor Phase Epitaxiy) 성장법으로 Ti metal mask를 이용한 GaN 성장연구)

  • Kim, Dong-Sik
    • 전자공학회논문지 IE
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    • v.48 no.2
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    • pp.1-5
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    • 2011
  • The epitaxial GaN layer of $120{\mu}m$ ~ $300{\mu}m$ thickness with a stripe Ti mask pattern is performed by hydride vapor phase epitaxy(HVPE). Ti strpie mask pattern is deposited by DC magnetron sputter on GaN epitaxial layer of $3{\mu}m$ thickness is grown by hydride vapor phase epitaxy(HVPE). Void are observed at point of Ti mask pattern when GaN layer is investigated by scanning electron microscope. The Crack of GaN layer is observed according to void when it is grown more thick GaN layer. The full width at half maximum of peak which is measured by X-ray diffraction is about 188 arcsec. It is not affected its crystallization by Ti meterial when GaN layer is overgrown on Ti stripe mask pattern according as it is measure FWHM of overgrowth GaN using Ti material against FWHM of first growth GaN epitaxial layer.

Characteristics of Free-Standing GaN Substrates grown by Hydride Vapor Phase Epitaxy (Hydride Vapor Phase Epitaxy 법으로 성장된 Free-Standing GaN 기판의 특성에 관한 연구)

  • Kim, Hwa-Mok;Choe, Jun-Seong;O, Jae-Eung;Yu, Tae-Gyeong
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.37 no.3
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    • pp.14-19
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    • 2000
  • Free-standing GaN single crystal substrates have been obtained by growing thick GaN epitaxial layers on (0001) sapphire substrates using hydride vapor phase epitaxy (HVPE) method. After growing the GaN thick film of 200 ${\mu}{\textrm}{m}$, a free-standing GaN with a size of 10 mm $\times$10 mm were obtained by mechanical polishing process to remove sapphire substrate. Crack-free GaN substrates have been obtained by GaCl pre-treatment prior to the growth of GaN epitaxial layers. Properties of free-standing GaN substrates have been compared with those of lateral epitaxial overgrowth (LEO) GaN films by double-crystal x-ray diffraction (DC-XRD), cathodoluminescence (CL) and photoluminescence (PL) measurements.

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Growth and Properties of GaN on $\textrm{MgAl}_{2}\textrm{O}_{4}$ Substrate by Hydride Vapor Phase Epitaxy Method ($\textrm{MgAl}_{2}\textrm{O}_{4}$ 기판위에 GaN의 Hydride Vapor Phase Epitaxy성장과 특성)

  • Lee, Yeong-Ju;Kim, Seon-Tae;Kim, Bae-Yong;Hong, Chang-Hui
    • Korean Journal of Materials Research
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    • v.7 no.8
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    • pp.707-713
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    • 1997
  • HVPE(hydride vapor phase epitaxy)법으로 (111)MgAI$_{2}$ $O_{4}$기판위에 GaN 후막을 성장하였다. GaN를 성장하기 전에 기판에 표면을 GaCI로 처리한 수 성장하였을 때 이중 X선 회절 피크의 반치폭이 710 arcsec로서 N $H_{3}$로 처리한 후 성장한 GaN에 비하여 작았으며, 무색 투명의 경면상태가 얻어\ulcorner다. 113$0^{\circ}C$의 온도에서 성장한 GaN 의 광루미네센스(PL)특성과 동일하게 나타났다. 10K의 온도에서 측정된 PL 스펙트럼은 자유여기자와 속박여기자의 재결합천이에 의한 피크들과 Mg과 관련된 도너-억셉터 쌍 사이의 재결합 및 이의 1LO, 2LO, 3LO 및 4 LO 포논복제에 의한 피크들이 나타났다. 성장된 GaN는 n형의 전도성을나타내었으며, 캐리어 이동도와 농도는 각각 21.3$\textrm{cm}^2$/V ㆍsec와 4.2 x $10^{18}$$cm^{-3}$이었다.

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A study on the growth behavior of AlN single crystal according to the change of N2 in HVPE propcess (HVPE(Hydride Vapor Phase Epitaxy) 법을 적용한 N2 양의 변화에 따른 AlN 단결정의 성장 거동에 관한 연구)

  • Kyung-Pil Yin;Seung-Min Kang
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.34 no.2
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    • pp.61-65
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    • 2024
  • HVPE (Hydride vapor phase epitaxy) is a method of manufacturing thin films or single crystals using gaseous raw materials. This is a method that applies the principles of chemical vapor deposition to grow a single crystal of a material with low meltability or high melting point, and is one of the methods that can obtain a gallium nitride (GaN) single crystal. Recently, much research has been conducted to grow aluminum nitride (AlN) single crystals using this method, but good results have not yet been obtained. In this study, we attempted to grow AlN single crystals using the HVPE method. Nitrogen was used as a carrier gas in the growth process, and the growth results according to changes in the amount of nitrogen (N2) were examined. Changes in growth crystals as the amount of nitrogen increased were confirmed. The shape of the grown AlN single crystal was observed using an optical microscope, and the rocking curve was measured using double crystal X-ray diffractometry (DCXRD) to confirm the creation of the AlN crystal. The crystallinity of single crystals was also investigated.

Background impurity incorporation in the growth of InP by hydride vapor phase epitaxy technique (Hydride 기상증착법을 이용한 InP 성장에서의 배경 불순물 도입에 관한 연구)

  • Chinho Park
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.6 no.2
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    • pp.141-154
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    • 1996
  • Intrinsic layers of homoepitaxial InP grown by the hydride vapor phase epitaxy (VPE) technique were investigated by Fourier-transform photoluminescence(FTPL) and variable temperature Hall measurements. The effect of process variables (i.e., source zone temperature and inlet mole fractions of HCl and $PH_{3}$) on the backgroudn impurity levels was investigated. The background carrier concentration was found to decrease with decreasing source zone temperature and increasing HCl, but was relatively independent of $PH_{3}$ for the range of mole fraction studied. The presence of background donors and acceptors was clearly verified in the FTPL spectra, and the major impurities were tentatively identified as Si donors and Zn acceptors as well as some unidentified acceptors.

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Polarity of freestanding GaN grown by hydride vapor phase epitaxy

  • Lee, Kyoyeol;Auh, Keun-Ho
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.11 no.3
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    • pp.106-111
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    • 2001
  • The freestanding GaN substrates were grown by hydride vapor phase epitaxy (HVPE) on (0001) sapphire substrate and prepared by using laser induced lift-off. After a mechanical polishing on both Ga and N-surfaces of GaN films with 100$\mu\textrm{m}$ thick, their polarities have been investigated by using chemical etching in phosphoric acid solution, 3 dimensional surface profiler and Auger electron spectroscopy (AES). The composition of the GaN film measured by AES indicted that Ga and N terminated surfaces have the different N/Ga peak ratio of 0.74 and 0.97, respectively. Ga-face and N-face of GaN revealed quite different chemical properties: the polar surfaces corresponding to (0001) plane are resistant to a phosphoric acid etching whereas N-polar surfaces corresponding to(0001) are chemically active.

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Optical Properties of HVPE Grown GaN Substrates (HVPE법으로 성장된 GaN 기판의 광학적 특성)

  • 김선태;문동찬
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.10
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    • pp.784-789
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    • 1998
  • In this work, the optical properties of freestanding GaN single crystalline substrate grown by hydride vapor phase epitaxy(HVPE) were investigated. The low temperature PL spectrum in freestanding GaN consists of free and bound exciton emissions, and a deep DAP recombination around at 1.8eV. The optically-pumped stimulated emission in freestanding GaN substrate was observed at room temperature. At the maximum power density of 2MW/$\textrm{cm}^2$, the peak energy and FEHM of stimulated emission were 3.318 eV and 8meV, respectively. The excitation power dependence on the integrated emission intensity indicates the threshold pumping power density of 0.4 MW/$\textrm{cm}^2$.

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Investigation of InN nanograins grown by hydride vapor phase epitaxy (수소 화물 기상 증착법을 이용한 InN 나노 알갱이 성장에 관한 연구)

  • Jean, Jai-Weon;Lee, Sang-Hwa;Kim, Chin-Kyo
    • Journal of the Korean Vacuum Society
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    • v.16 no.6
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    • pp.479-482
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    • 2007
  • InN nanograins were directly grown on $0.3^{\circ}$-miscut (toward M-plane) c-plane sapphire substrates by hydride vapor phase epitaxy (HVPE) and their growth characteristics were investigated by utilizing x-ray scattering. Depending on the various growth parameters, the formation of InN was sensitively influenced. Six samples were grown by changing HCl flow rate, the substrate temperature and Ga/In source zone temperature. All the samples were grown on unintentionally $NH_3-pretreated$ sapphire substrates. By increasing the flow rate of HCl from 10 sccm to 20 sccm, the formation of GaN grains with different orientations was observed. On the other hand, when the substrate temperature was raised from $680^{\circ}C$ to $760^{\circ}C$, the increased substrate temperature dramatically suppressed the formation of InN. A similar behavior was observed for the samples grown with different source zone temperatures. By decreasing the source zone temperature from $460^{\circ}C$ to $420^{\circ}C$, a similar behavior was observed.