• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.9
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• pp.558-565
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• 2017

Hybrid insulators that have the advantages of both porcelain (high mechanical strength and chemical stability) as well as polymer (light weight and high resistance to pollution) insulators, can be used in place of individual porcelain and polymer insulators that are used for both mechanical support as well as electrical insulation of overhead power transmission lines. The most significant feature of hybrid insulators is the presence of porcelain/polymer interfaces where the porcelain and polymer are physically bonded. Individual porcelain and polymer insulators do not have such porcelain/polymer interfaces. Although the interface is expected to affect the mechanical/electrical properties of the hybrid insulator, systematic studies of the adhesion properties at the porcelain/polymer interface and the effect of the interface on the insulation characteristics and electric field distribution of the hybrid insulator have not been reported. In this study, we fabricated small hybrid insulator specimens with various types of interfaces and investigated the effect of the porcelain/polymer interface on the microstructure, insulating characteristics, and electric field distribution of the hybrid insulators. It was observed that the porcelain/polymer interface of the hybrid insulator does not have a significant effect on the insulating characteristics and electric field distribution, and the hybrid insulator can exhibit electrical insulating properties that are similar or superior to those of individual porcelain and polymer insulators.

• Journal of Information Display
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• v.6 no.2
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• pp.16-18
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• 2005

Hybrid insulator pentacene thin film transistors (TFTs) are fabricated with thermally grown oxide and cross-linked polyvinylalcohol (PVA) including surface treatment by dilute ploymethylmethacrylate (PMMA) layer on $n^+$ doped silicon wafer. Through the optimization of $SiO_2$ layer thickness in hybrid insulator structure, carrier mobility is increased to more than 35 times than that of the TFT which has only a gate insulator of $SiO_2$ at the same electric field. The carrier mobility of $1.80cm^2$/V-s, subthreshold swing of 1.81 V/decade, and $I_{on}/I_{off}$ current ratio> $1.10{\times}10^5$ are obtained less than -30 V bias condition. The result is one of the best reported performances of pentacene TFTs with hybrid insulator including cross-linked PVA layer as a gate insulator at relatively low voltage operation.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1291-1293
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• 2005

Hybrid insulator pentacene thin film transistors (TFTs) were fabricated with thermally grown oxide and cross-linked polyvinylalcohol (PVA) including surface treatment by dilute ploymethylmethacrylate (PMMA) layers on $n^+$ doped silicon wafer. Through the optimization of $SiO_2$ layer thickness in hybrid insulator structure, carrier mobility was increased to above 35 times than that of the TFT only with the gate insulator of $SiO_2$ at the same transverse electric field. The carrier mobility of 1.80 $cm^2$/V-s, subthreshold swing of 1.81 V/decade, and $I_{on}$/ $I_{off}$ current ratio > 1.10 × $10^5$ were obtained at low bias (less than -30 V) condition. The result is one of the best reported performances of pentacne TFTs with hybrid insulator including cross-linked PVA material at low voltage operation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.271-271
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• 2010

$BaTiO_3$(BT) has high permittivity so that has been applied to dielectric and insulator materials in 3D system-level package integration. In order to achieve excellent performance of device, the BT layer should be highly dense. In this study, BT thick films were prepared by the inkjet printing method. And these films were cured at $280^{\circ}C$ after infiltration of polymer resin. As a result, we have successfully fabricated not only the inkjet-printed hybrid BT film but also metal-insulator-metal(MIM) capacitor without sintering process. Changes in the dielectric constant of BT hybrid film with particle size and packing density were investigated. The dielectric constant was increased with increasing packing density and particle size. Further, the BT hybrid film using two different size particles had even higher packing density and dielectric constant.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.393-395
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• 2009

We fabricated oxide and oxide/organic hybrid TFTs on a glass substrate using the photolithography process under $200^{\circ}C$. We adopt the solution processed organic ferroelectric materials of P(VDF-TrFE) and polyimide (KSPI) insulator for 1-T structure memory and flexible device, respectively. All devices have successfully operated and showed the possibility of hybrid TFTs for the application to the flexible electronic devices.

• Progress in Superconductivity and Cryogenics
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• v.21 no.1
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• pp.6-9
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• 2019

Developing a gate-tunable, scalable, and topologically-protectable supercurrent qubit and integrating it into a quantum circuit are crucial for applications in the fields of quantum information technology and topological phenomena. Here we propose that the nano-hybrid supercurrent transistors, a superconducting quantum analogue of a transistor, made of topological insulator nanowire would be a promising platform for unprecedented control of both the supercurrent magnitude and the current-phase relation by applying a voltage on a gate electrode. We believe that our experimental design will help probing Majorana state in topological insulator nanowire and establishing a solid-state platform for topological supercurrent qubit.

• Journal of the Semiconductor & Display Technology
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• v.5 no.1 s.14
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• pp.21-25
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• 2006

To improve the performance of organic thin film transistor, we investigated the properties of gate insulator's surface according to the leakage current by I-V measurement. The surface was treated by the dilute n-octadecyltrichlorosilane solution. The alkyl group of n-octadecyltrichlorosilane induced the electron tunneling and the electron tunneling current caused the breakdown at high electric field, consequently shifting the breakdown voltage. The 0.5% sample with an electron-rich group was found to have a large leakage current and a low barrier height because of the effect of an energy barrier lowered by, thermionic current, which is called the Schottky contact. The surface properties of the insulator were analyzed by I-V measurement using the effect of Poole-Frankel emission.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.12
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• pp.1009-1013
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• 2009

In this study, we have been synthesized the dielectric layer using pure organic and organic-inorganic hybrid precursor on flexible substrate for improving of the organic thin film transistors (OTFTs) and, design and fabrication of organic thin-film transistors (OTFTs) using small-molecule organic semiconductors with pentacene as the active layer with record device performance. In this work OTFT test structures fabricated on polymerized substrates were utilized to provide a convenient substrate, gate contact, and gate insulator for the processing and characterization of organic materials and their transistors. By an adhesion development between gate metal and PI substrate, a PI film was treated using $O_2$ and $N_2$ gas. The best peel strength of PI film is 109.07 gf/mm. Also, we have studied the electric characteristics of pentacene field-effect transistors with the polymer gate-dielectrics such as cyclohexane and hybrid (cyclohexane+TEOS). The transistors with cyclohexane gate-dielectric has higher field-effect mobility, $\mu_{FET}=0.84\;cm^2/v_s$, and smaller threshold voltage, $V_T=-6.8\;V$, compared with the transistor with hybrid gate-dielectric.

• International Journal of Fuzzy Logic and Intelligent Systems
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• v.1 no.1
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• pp.87-94
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• 2001

Silicon nitride films grown by plasma-enhanced chemical vapor deposition (PECVD) are useful for a variety of applications, including anti-reflecting coatings in solar cells, passivation layers, dielectric layers in metal/insulator structures, and diffusion masks. PECVD systems are controlled by many operating variables, including RF power, pressure, gas flow rate, reactant composition, and substrate temperature. The wide variety of processing conditions, as well as the complex nature of particle dynamics within a plasma, makes tailoring SiN film properties very challenging, since it is difficult to determine the exact relationship between desired film properties and controllable deposition conditions. In this study, SiN PECVD modeling using optimized neural networks has been investigated. The deposition of SiN was characterized via a central composite experimental design, and data from this experiment was used to train and optimize feed-forward neural networks using the back-propagation algorithm. From these neural process models, the effect of deposition conditions on film properties has been studied. A recipe synthesis (optimization) procedure was then performed using the optimized neural network models to generate the necessary deposition conditions to obtain several novel film qualities including high charge density and long lifetime. This optimization procedure utilized genetic algorithms, hybrid combinations of genetic algorithm and Powells algorithm, and hybrid combinations of genetic algorithm and simplex algorithm. Recipes predicted by these techniques were verified by experiment, and the performance of each optimization method are compared. It was found that the hybrid combinations of genetic algorithm and simplex algorithm generated recipes produced films of superior quality.

• Korean Journal of Optics and Photonics
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• v.33 no.4
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• pp.177-186
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• 2022

The performance of a surface plasmon resonance sensor is evaluated based on the sensitivity (nm/RIU) and sharpness from the full width at half maximum (FWHM) and the peak depth of a resonance peak. These factors are determined by the materials and conformational properties of the sensing structure. In this paper, we investigated an optimized insulator-metal-insulator (IMI) multilayer-based surface plasmon resonance sensor structure to simultaneously achieve high sensitivity, narrow FWHM, and deep peak depth while using gold for the metallic film layer which occurs peak broadening. By adopting the optimized structure, sensitivity of 8,390 nm/RIU, FWHM of 11.92 nm, and a resonance peak depth of 93.1% were achieved for 1.45-1.46 refractive index variation of the sensing layer. With the suggested structure conformation, high sensitivity and resolution of sensing performance can be achieved.