• 한국분말재료학회지
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• 제20권1호
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• pp.19-23
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• 2013

Ru films were successfully prepared by plasma-enhanced atomic layer deposition (PEALD) using $Ru(EtCp)_2$ and $NH_3$ plasma. To optimize Ru PEALD process, the effect of growth temperature, $NH_3$ plasma power and $NH_3$ plasma time on the growth rate and preferred orientation of the deposited film was systemically investigated. At a growth temperature of $270^{\circ}C$ and $NH_3$ plasma power of 100W, the saturated growth rate of 0.038 nm/cycle was obtained on the flat $SiO_2$/Si substrate when the $Ru(EtCp)_2$ and $NH_3$ plasma time was 7 and 10 sec, respectively. When the growth temperature was decreased, however, an increased $NH_3$ plasma time was required to obtain a saturated growth rate of 0.038 nm/cycle. Also, $NH_3$ plasma power higher than 40 W was required to obtain a saturated growth rate of 0.038 nm/cycle even at a growth temperature of $270^{\circ}C$. However, (002) preferred orientation of Ru film was only observed at higher plasma power than 100W. Moreover, the saturation condition obtained on the flat $SiO_2$/Si substrate resulted in poor step coverage of Ru on the trench pattern with an aspect ratio of 8:1, and longer $NH_3$ plasma time improved the step coverage.

• Journal of Information Display
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• 제10권1호
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• pp.33-36
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• 2009

A new hybrid silicon thin-film transistor (TFT) fabrication process using the DPSS laser crystallization technique was developed in this study to realize low-temperature poly-Si (LTPS) and a-Si:H TFTs on the same substrate as a backplane of the active-matrix liquid crystal flat-panel display (AMLCD). LTPS TFTs were integrated into the peripheral area of the activematrix LCD panel for the gate driver circuit, and a-Si:H TFTs were used as a switching device of the pixel electrode in the active area. The technology was developed based on the current a-Si:H TFT fabrication process in the bottom-gate, back-channel etch-type configuration. The ion-doping and activation processes, which are required in the conventional LTPS technology, were thus not introduced, and the field effect mobility values of $4\sim5cm^2/V{\cdot}s$ and $0.5cm^2/V{\cdot}s$ for the LTPS and a-Si:H TFTs, respectively, were obtained. The application of this technology was demonstrated on the 14.1" WXGA+(1440$\times$900) AMLCD panel, and a smaller area, lower power consumption, higher reliability, and lower photosensitivity were realized in the gate driver circuit that was fabricated in this process compared with the a-Si:H TFT gate driver integration circuit

• 한국응용과학기술학회지
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• 제29권1호
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• pp.141-148
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• 2012

본 연구에서는 초소수성 실리카 에어로겔을 이용하여 단열 성능을 갖는 투명 필름용 유/무기 복합 코팅물질을 제조하였다. 바인더 물질로 사용된 자외선 경화형 우레탄 아크릴레이트 수지와 에어로겔과의 상용성을 위해 계면활성제(Brij 56)를 이용하여 에어로겔의 표면을 개질하였다. 개질된 에어로겔을 고분자 수지와 복합화한 코팅 용액을 폴리카보네이트 기지재에 코팅한 후 자외선경화를 통해 코팅필름을 제조하였다. 에어로겔이 10 vol% 함량으로 첨가되었을 때, 코팅필름의 단열성능은 측정된 열전도도 기준으로 순수 기지재 대비 28% 정도로 향상되었다. 또한, 코팅필름의 광투과율은 에어로겔이 50 vol%로 과량 첨가된 경우에도 80% 이상 높은 수준을 유지하였으며, 우수한 접착성(5B) 및 연필 경도(4H)를 보여주었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.341-341
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• 2012

Recently, oxide semi-conductor materials have been investigated as promising candidates replacing a-Si:H and poly-Si semiconductor because they have some advantages of a room-temperature process, low-cost, high performance and various applications in flexible and transparent electronics. Particularly, amorphous indium-gallium-zinc-oxide (a-IGZO) is an interesting semiconductor material for use in flexible thin film transistor (TFT) fabrication due to the high carrier mobility and low deposition temperatures. In this work, we demonstrated improvement of flexibility in IGZO TFTs, which were fabricated on polyimide (PI) substrate. At first, a thin poly-4vinyl phenol (PVP) layer was spin coated on PI substrate for making a smooth surface up to 0.3 nm, which was required to form high quality active layer. Then, Ni gate electrode of 100 nm was deposited on the bare PVP layer by e-beam evaporator using a shadow mask. The PVP and $Al_2O_3$ layers with different thicknesses were used for organic/inorganic multi gate dielectric, which were formed by spin coater and atomic layer deposition (ALD), respectively, at $200^{\circ}C$. 70 nm IGZO semiconductor layer and 70 nm Al source/drain electrodes were respectively deposited by RF magnetron sputter and thermal evaporator using shadow masks. Then, IGZO layer was annealed on a hotplate at $200^{\circ}C$ for 1 hour. Standard electrical characteristics of transistors were measured by a semiconductor parameter analyzer at room temperature in the dark and performance of devices then was also evaluated under static and dynamic mechanical deformation. The IGZO TFTs incorporating hybrid gate dielectrics showed a high flexibility compared to the device with single structural gate dielectrics. The effects of mechanical deformation on the TFT characteristics will be discussed in detail.

• 대한전자공학회논문지SD
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• 제43권5호
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• pp.11-16
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• 2006

본 연구는 SiOC 박막의 비정질 정도와 유전상수와의 상관성에 관하여 정리하고 있다. 고밀도 플라즈마 CVD 방법에 의해 증착된 SiOC 박막은 bistrimethyl- silylmethane와 산소가 혼합된 개스 소스의 유량비를 다르게 하였다. 증착된 박막과 $400^{\circ}C$ 열처리된 박막은 XRD분석방법을 적용하여 비정질도를 유추하였다. 적량분석을 위해서 각 시료들의 회절패턴을 푸리에 해석에 의해 동경분포함수로 변환하고 비교하였다. 열처리한 박막의 비정질도는 증착한 박막에 비하여 결정도가 높았다. 유량비에 따라서 유전상수가 변하였으며, 유전상수는 열처리 후 비정질도가 가장 큰 박막에서 가장 낮게 나타났다.

• Korean Chemical Engineering Research
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• 제45권4호
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• pp.335-339
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• 2007

투명 polycarbonate(PC) 시트의 낮은 표면강도 문제를 극복하기 위해, 고굴절률을 보이는 유-무기 혼성 하드코팅 용액을 Sol-Gel 법을 이용하여 제조하였다. 코팅용액은 무기물 티타니아의 전구체인 TTIP(titanium tetraisopropoxide)에 유기물을 함유한 화합물인 GPTMS[(3-glycidoxypropyl) trimethoxysilane]를 첨가하여 제조하였다. 그 후 기재인 PC 시트에 스핀 코팅시키고, 열 경화 시켜 고굴절률을 보이는 하드코팅 필름을 제조 하였다. 코팅 용액 중의 GPTMS 함유량을 변화시킴에 의해 1.53-1.61의 굴절률을 갖는 코팅 막의 제조가 가능하였다. GPTMS의 첨가량이 증가할수록 코팅막의 굴절률은 감소하였으나, 연필경도는 증가하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 학술대회 및 기술세미나 논문집 디스플레이 광소자
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• pp.78-80
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• 2006

The hybrid thin-film (HTF) passivation layer composed of the Ultra Violet (UV) curable acrylate layer and MS-31 (MgO:$SiO_2$=3:1wt%) layer was adopted in organic light emitting device (OLEO) to protect organic light emitting materials from penetrations of oxygen and water vapors. The results showed that the HTF layer possessed a very low WVTR value of lower than $0.007gm/m^{2+}day$ at $37.8^{\circ}C$ and 100% RH. This value was within the limited range of the sensitivity of WVTR measurements. And the lifetime of the HTF passivated device became almost three times longer than that of the bare device. The HTF on the OLEO was found to be very effective in protect what from the penetrations of oxygen and moisture.

• 공업화학
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• 제22권6호
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• pp.691-696
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• 2011

졸-겔 공정을 활용하여 유무기 하이브리드 형태의 투명 필름용 하드코팅층에 사용되는 코팅졸을 제작하였다. 콜로이드 실리카와 알콕시 실란{vinyltrimethoxy silane : (VTMS)와 [3-(methacryloyloxy)] propyltrimethoxysilane : (MAPTMS)}을 이용하였고 다양한 조건에 따라 실험을 실시하였다. 이 졸은 PMMA와 교반하여 PET필름에 코팅막을 형성하였다. 코팅막에 대한 특성은 여러 가지 측정에 의해 확인하였다. 코팅막은 PMMA 단독에 비해서 유기실란 양이 첨부된 형태에서 코팅막의 연필경도와 기재와의 부착력이 우수하였고 실험된 조건에서 시란의 양이 증가할수록 연필경도가 증가하는 경향이 나타났다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.77-77
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• 2016

Thin films synthesized by plasma processes have been widely applied in a variety of industrial sectors. The structure control of thin film is one of prime factor in most of these applications. It is well known that the structure of this film is closely associated with plasma parameters and species of plasma which are electrons, ions, radical and neutrals in plasma processes. However the precise control of structure by plasma process is still limited due to inherent complexity, reproducibility and control problems in practical implementation of plasma processing. Therefore the study on the fundamental physical properties that govern the plasmas becomes more crucial for molecular scale control of film structure and corresponding properties for new generation nano scale film materials development and application. The thin films are formed through nucleation and growth stages during thin film depostion. Such stages involve adsorption, surface diffusion, chemical binding and other atomic processes at surfaces. This requires identification, determination and quantification of the surface activity of the species in the plasma. Specifically, the ions and neutrals have kinetic energies ranging from ~ thermal up to tens of eV, which are generated by electron impact of the polyatomic precursor, gas phase reaction, and interactions with the substrate and reactor walls. The present work highlights these aspects for the controlled and low-temperature plasma enhanced chemical vapour disposition (PECVD) of Si-based films like crystalline Si (c-Si), Si-quantum dot, and sputtered crystalline C by the design and control of radicals, plasmas and the deposition energy. Additionally, there is growing demand on the low-temperature deposition process with low hydrogen content by PECVD. The deposition temperature can be reduced significantly by utilizing alternative plasma concepts to lower the reaction activation energy. Evolution in this area continues and has recently produced solutions by increasing the plasma excitation frequency from radio frequency to ultra high frequency (UHF) and in the range of microwave. In this sense, the necessity of dedicated experimental studies, diagnostics and computer modelling of process plasmas to quantify the effect of the unique chemistry and structure of the growing film by radical and plasma control is realized. Different low-temperature PECVD processes using RF, UHF, and RF/UHF hybrid plasmas along with magnetron sputtering plasmas are investigated using numerous diagnostics and film analysis tools. The broad outlook of this work also outlines some of the 'Grand Scientific Challenges' to which significant contributions from plasma nanoscience-related research can be foreseen.

• 조명전기설비학회논문지
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• 제20권2호
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• pp.24-28
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• 2006

본 논문은 마이크로 전극 측정 시스템을 사용하여 차세대 신동력 산업인 HEV(Hybrid Electric Vehicle) 및 수소연료전지(PEMFC) 차량용 니켈 수소전지의 전극소재로 사용되고 있는 수소저장합금(Mm : misch metal, $MmNi_{3.55}Co_{0.75}Mn_{0.4}Al_{0.3}$)의 단일 입자에 대해 전기화학적 수소 흡방출 특성 평가를 수행 하였다. 즉 Carbon fiber 마이크로 전극을 합금 입자 한개 위에 전기적인 접촉을 이루도록 조정하고, Cyclic Voltammetry 및 Galvanostatic 충방전 실험을 수행하였다. 그 결과 단일 입자의 방전용량은 약 280[mAh/g]로 이론용량의 약 90[%]의 특성을 보여 주었다. 데이터는. 실제 Ni-MH전지를 구성하는 합금입자 그리고 폴리머 바인더로 구성된 Composite film 전극과 비교 하였다. 추가적으로 합금의 단일 입자에 있어 in situ 미분화 현상을 관찰하였다. 마이크로 전극 측정 시스템에 의한 단일 입자의 전기화학적 평가는 기존의 Composite Film 전극에 비해 수소저장합금에 대해 보다 상세하고 정확한 정보를 쉽게 얻을 수 있었다.