• 제목/요약/키워드: Hybrid film

검색결과 532건 처리시간 0.027초

단결정 다이아몬드공구를 사용한 Cu 도금된 몰드의 미세 구조체 가공특성 (Machining Characteristics of Micro Structure using Single-Crystal Diamond Tool on Cu-plated Mold)

  • 김창의;전은채;제태진;강명창
    • 한국분말재료학회지
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    • 제22권3호
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    • pp.169-174
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    • 2015
  • The optical film for light luminance improvement of BLU that is used in LCD/LED and retro-reflective film is used as luminous sign consist of square and triangular pyramid structure pattern based on V-shape micro prism pattern. In this study, we analyzed machining characteristics of Cu-plated flat mold by shaping with diamond tool. First, cutting conditions were optimizing as V-groove machining for the experiment of micro prism structure mold machining with prism pattern shape, cutting force and roughness. Second, the micro prism structure such as square and triangular pyramid pattern were machined by cross machining method with optimizing cutting conditions. Burr and chip shape were discussed with material properties and machining method.

New Process Development for Hybrid Silicon Thin Film Transistor

  • Cho, Sung-Haeng;Choi, Yong-Mo;Jeong, Yu-Gwang;Kim, Hyung-Jun;Yang, Sung-Hoon;Song, Jun-Ho;Jeong, Chang-Oh;Kim, Shi-Yul
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.205-207
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    • 2008
  • The new process for hybrid silicon thin film transistor (TFT) using DPSS laser has been developed for realizing both low-temperature poly-Si (LTPS) TFT and a-Si:H TFT on the same substrate as a backplane of active matrix liquid crystal display. LTPS TFTs are integrated on the peripheral area of the panel for gate driver integrated circuit and a-Si:H TFTs are used as a switching device for pixel in the active area. The technology has been developed based on the current a-Si:H TFT fabrication process without introducing ion-doping and activation process and the field effect mobility of $4{\sim}5\;cm^2/V{\cdot}s$ and $0.5\;cm^2/V{\cdot}s$ for each TFT was obtained. The low power consumption, high reliability, and low photosensitivity are realized compared with amorphous silicon gate driver circuit and are demonstrated on the 14.1 inch WXGA+ ($1440{\times}900$) LCD Panel.

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A PLC-Based Optical Sub-assembly of Triplexer Using TFF-Attached WDM and PD Carriers

  • Han, Young-Tak;Park, Yoon-Jung;Park, Sang-Ho;Shin, Jang-Uk;Kim, Duk-Jun;Park, Chul-Hee;Park, Sung-Woong;Kwon, Yoon-Koo;Lee, Deug-Ju;Hwang, Wol-Yon;Sung, Hee-Kyung
    • ETRI Journal
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    • 제28권1호
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    • pp.103-106
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    • 2006
  • We have fabricated a planar lightwave circuit (PLC) hybrid-integrated optical sub-assembly of a triplexer using a thin film filter (TFF)-attached wavelength division multiplexer (WDM) and photodiode (PD) carriers. Two types of TFFs were attached to a diced side of a silica-terraced PLC platform, and the PD carriers with a $45^{\circ}$ mirror on which pin-PDs were bonded were assembled with the platform. A clear transmitter eye-pattern and minimum receiver sensitivity of -24.5 dBm were obtained under 1.25 Gb/s operation for digital applications, and a second-order inter-modulation distortion (IMD2) of -70 dBc was achieved for an analog receiver.

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Hybrid 형 X선 Sensor 기술을 위한 a-Se:Te 필름의 성장 (Growth of a-Se:Te thick films for Hybrid X-ray sensor technology)

  • 차병열;박지군;최장용;강상식;김재형;남상희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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    • pp.79-82
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    • 2003
  • a-Se film is known as promising medical X-ray detector material but a-Se as dopanted Tellurium is not available in X-ray detectors. a-Se thick film was grown by vacuum thermal evaporator to $3{\mu}m$ thickness. The characteristics of thick films were analyzed by XRD, U-V Meter, and SEM measurements. Te composition is 0.1, 0.3, 0.5, 0.7g. This paper is fundmental data for phosphor layer's essential parameter that selenium have absorption wavelength along to various Te concentration rate.

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탄소 주입 실리콘 산화 절연박막에서 전위장벽과 온도 변화에 대한 상관성 (Correlation between the Potential Barrier and Variation of Temperature on SiOC thin film)

  • 오데레사
    • 한국정보통신학회논문지
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    • 제12권12호
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    • pp.2247-2252
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    • 2008
  • 탄소 주입실리콘 산화막으로서 SiOC 박막은 화학적 증착 방법에 의해 성막되었으며, 박막의 분석기법으로 FTIR 분석기와 I-V 측정과 표면분석으로 전자현미경을 이용하였다. 증착된 샘플들은 유량비의 변화에 따라서 화학적 이동현상이 나타났으며, 표면에서의 그레인은 유기물 특성과 무기물 특성의 SiOC 박막샘플에서 나타났다. 그러나 하이브리드 특성의 박막에서는 그레인이 형성되지 않았다. 하이브리드 특성의 박막샘플에서 온도가 증가할수록 누설전류는 감소하였다. 누설전류는 온도가 증가함에 따라 감소하였는데 전위장벽이 증가하기 때문에 감소하는 것으로 나타났다.

XPS 분석을 통한 CrMoN 코팅의 마찰마모 거동 연구 (Tribological Behavior Analysis of CrMoN Coating by XPS)

  • 양영환;여인웅;박상진;임대순;오윤석
    • 대한금속재료학회지
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    • 제50권8호
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    • pp.549-556
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    • 2012
  • The tribological behavior of CrMoN films with respect to surface chemistry was investigated by using X-ray photoelectron spectroscopy (XPS). All of the films were prepared from a hybrid PVD system consisting of DC unbalanced magnetron (UBM) sputtering and arc ion plating (AIP) sources. The tribological property of the films was evaluated by a friction coefficient using a Ball-on-disk type tribometer. The chemistry of wear track was analyzed by energy dispersive spectroscopy (EDS) and XPS. The friction coefficient was measured to be 0.4 for the CrMoN film, which is lower than that of a monolithic CrN film. EDS and XPS results imply the formation of an oxide layer on the coating surface, which was identified as molybdenum oxide phases, known to be a solid lubricant during the wear test.

TEOS/염기 및 MTMS/산 혼성 용액으로 제조한 반사방지 코팅막의 특성 (Characteristics of Anti-reflective Coating Film Prepared from Hybrid Solution of TEOS/Base and MTMS/Acid)

  • 박현규;김효섭;박주식;김영호
    • 공업화학
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    • 제30권3호
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    • pp.358-364
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    • 2019
  • 반사 방지(anti-reflective; AR) 코팅막의 광학 특성 및 내오염성을 향상하기 위하여 tetraethylorthosilicate (TEOS)/염기 및 methyltrimethoxysilane (MTMS)/산 혼성 용액의 혼합비를 변화시키며 다양한 AR 코팅막을 제조하였다. 제조된 AR 코팅막은 UV-Vis, 접촉각 측정기, AFM, FT-IR 및 연필 경도 시험을 통해 특성을 분석하였다. MTMS/산 용액의 함량이 10 wt%인 혼성 용액으로 제조한 AR 코팅막에서 유리 기판은 매우 우수한 광학 특성(97.2%의 투과율), 우수한 내오염성($121^{\circ}$의 물 접촉각 및 $90^{\circ}$$CH_2I_2$ 접촉각), 중간 정도의 기계적 강도(4 H의 연필 경도)를 나타내었다. 특히 우수한 내오염성은 기판의 표면 위에서 혼성 용액 내 소량의 MTMS/산 용액으로부터 유래된 메틸기($-CH_3$)의 고른 분산에 기인한 것으로 고려되었다. 연필 경도 시험 결과로부터, AR 코팅막의 기계적 강도는 MTMS/산 용액의 함량이 증가할수록 향상되는 것으로 나타났다.

하이브리드 타입 절연막 위에서 열처리 온도에 따른 펜타센 생성과 관련된 화학반응 (Chemical Reaction of Pentacene Growth on Hybrid Type Insulator by Annealing Temperature)

  • 오데레사
    • 대한전자공학회논문지SD
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    • 제43권2호
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    • pp.13-17
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    • 2006
  • Pentacene channel PTFT(organic thin film transistor)을 SiOC 절연박막 위에서 thermal evaporation 방법을 이용하여 성장시켰다. CVD 방법으로 증착시킨 SiOC 절연막은 조성비에 따라 특성이 달라지므로 절연막 위에서의 펜타센의 화학적 반응을 조사하기 위해서 inorganic-type인 $O_2/(BTMSM+O_2)=0.5$의 비율을 갖는 SiOC 박막을 사용하였다. 펜타센 분자의 말단에서 SiOC 표면에서 Diels-Alder 반응에 의한 이중결합이 깨어지면서 안정된 성장을 하지만 온도가 높아감에 따라 표면에서의 $SN_2(bimolecular nucleophilic substitution)$ 반응과 연쇄적인 화학반응에 의해 .펜타센의 성장을 방해하는 것으로 나타났다.

Au 나노입자가 함침된 Poly (3, 4-ethylenedioxythiphene) 고분자 박막의 전기변색 특성연구 (Characterization of Electrochromic Properties of Au Nanoparticles Incorporated Poly (3, 4-ethylenedioxythiphene) Film)

  • 이종석;구경회;박형호
    • 한국재료학회지
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    • 제19권10호
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    • pp.527-532
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    • 2009
  • The electrochromic properties of Au nanoparticles (NPs) incorporating poly (3, 4-ethylenedioxythiphene) (PEDOT) film were investigated. Trisodium citrate was used for stabilizing Au NPs to control the size. The capping molecules of the Au nanoparticles were exchanged from citrate to 2-mercaptoethanol (2-ME). Water was removed by centrifuge and Au NPs were redispersed in methanol (MeOH). Finally, we obtained ca. 11.7 nm diameter of Au NPs. The effects of 0.15 at% of Au NPs incorporation on the optical, electrical, and eletrochromic properties of PEDOT films were investigated. The electrical property and switching speed of Au/PEDOT film was slightly improved over that of PEDOT film because Au NPs play a hopping site role and affect packing density of the PEDOT chain. Through the ultra violet-visible spectra of PEDOT and Au/PEDOT films at -0.7 V (vs Ag/AgCl), blue shift of maximum absorption peak was observed from PEDOT (585.4 nm) to Au/PEDOT (572.2 nm) due to a shortening of conjugated length of PEDOT. The Au NPs interfered with the degree of conjugation and the maximum absorption peak was shifted to shorter wavelength.