• Journal of Institute of Control, Robotics and Systems
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• v.7 no.11
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• pp.912-917
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• 2001

In this study, we define the measuring method of crank angle precisely using an event and perform a study on the hardware structure and software algorithms which is applicable for the commercial engine. Also we developed a Computer-ECU(Personal computer based electronic control unit) using a computer and a microprocessor, for performing the ignition at a desire position(angle) and for controlling a duty ratio a pulse for ISC(Idle speed control). We applied these algorithms to the modeling which is induced a concept of event and got a better result than a conventional ECU in the state of transient as a result of performing air fuel ratio control in a commercial engine. This technique can be used for the back to improve ECU performance. It the present type of Hybrid I. C voltage regulator is altered to the new type of regulator, we will be surely able to reduce the production cost as well as simplify the design of alternator\`s rear bracket and rectifier part because of the removal of trio diode. Experiment is taken by MS-R004.

• Journal of the Korean Physical Society
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• v.73 no.9
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• pp.1356-1361
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• 2018

Replacing conventional Si diodes with SiC diodes in Si insulated gate bipolar transistor (IGBT) modules is advantageous as it can reduce power losses significantly. Also, the fast switching nature of the SiC diode will allow Si IGBTs to operate at their full high-switching-speed potential, which at present conventional Si diodes cannot do. In this work, the electrical test results for Si-IGBT/4HSiC-Schottky hybrid substrates (hybrid SiC substrates) are presented. These substrates are built for two voltage ratings, 1.7 kV and 3.3 kV. Comparisons of the 1.7 kV and the 3.3 kV Si-IGBT/Si-diode substrates (Si substrates) at room temperature ($20^{\circ}C$, RT) and high temperature ($H125^{\circ}C$, HT) have shown that the switching losses in hybrid SiC substrates are miniscule as compared to those in Si substrates but necessary steps are required to mitigate the ringing observed in the current waveforms. Also, the effect of design variations on the electrical performance of 1.7 kV, 50 A diodes is reported here. These variations are made in the active and termination regions of the device.

• Progress in Superconductivity and Cryogenics
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• v.9 no.3
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• pp.57-61
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• 2007

The current limiting characteristics of hybrid SFCL with additional power electronic devices was investigated in order to improve operation reliabilities. The hybrid SFCL developed consists of a superconducting trigger (S/T) part, a fast switch (F/S) module and a current limiting (C/L) part. Although hybrid SFCL had shown a excellent current limiting characteristics, this device was rather vulnerable to the residual arc currents which could exist during fast switch operation. This undesirable arc should be extinguished as quickly as possible in order to implement perfect fault current commutation. So, in order to eliminate the residual arcs between fast switch contacts, the power electronic devices (IGBT or GTO) were connected in series between the S/T part and the interrupter of the F/S module. According to the fault tests conducting with an input voltage of $270\;V_{rms}$ and a fault current of $5\;kA_{rms}$, The power electronic devices could perfectly remove the arc generated between the contacts of the interrupter within 4 ms after the fault occurred. From the test analysis, it was confirmed that the hybrid SFCL could enhance the operation reliability by adopting additional power electronic devices.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.1
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• pp.52-58
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• 2006

Single-electron transistor (SET)-based logic cells and SET/FET hybrid integrated circuits have been fabricated on SOI chips. The input-output voltage transfer characteristic of the SET-based complementary logic cell shows an inverting behavior where the output voltage gain is estimated to be about 1.2 at 4.2K. The SET/FET output driver, consisting of one SET and three FETs, yields a high voltage gain of 13 and power amplification with a wide-range output window for driving next circuit. Finally, the SET/FET literal gate for a multi-valued logic cell, comprising of an SET, an FET and a constant-current load, displays a periodic voltage output of high/low level multiple switching with a swing as high as 200mV. The multiple switching functionality of all the fabricated logic circuits could be enhanced by utilizing a side gate incorporated to each SET component to enable the phase control of Coulomb oscillations, which is one of the unique characteristics of the SET-based logic circuits.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.8
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• pp.325-329
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• 2003

Effects of thermal treatment on the structural properties of diamond-like carbon (DU) films were examined. The DLC films were deposited by using a modified filtered cathodic vacuum arc (FCVA) deposition system and by varying the negative substrate bias voltage, deposition time, and nitrogen flow rate. Thermal treatment on DLC films was performed using a rapid thermal annealing (RTA) process at $600^{\circ}C$ for 2min. Raman spectroscopy, x-ray photoemission spectroscopy (XPS), atomic force microscope (AFM), and surface profiler were used to characterize the I$_{D}$I$_{G}$ intensity ratio, sp$^3$ hybrid carbon fraction, internal stress, and surface roughness. It was found for all the deposited DLC films that the RTA-treatment results in the release of internal compressive stress, while at the same time it leds to the decrease of sp$^3$ fraction and the increase of I$_{D}$I$_{G}$ intensity ratio. It was also suggested that the thermal treatment effect on the structural property of DLC films strongly depends on the diamond-like nature (i.e., sp$^3$ fraction) of as-deposited film.ed film.

• The Transactions of the Korean Institute of Power Electronics
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• v.21 no.2
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• pp.95-101
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• 2016

This paper proposed a high-power density bidirectional converter for hybrid electric vehicle high-voltage DC-DC converter(HDC). The conventional HDC has two disadvantages. First, large inductance is required to satisfy the ripple current of inductor by low switching frequency (<20 kHz). Second, large core size is required to prevent the saturation of inductor by high current. Compared with the conventional HDC, the proposed HDC can reduce inductance with SiC-FET for high frequency driving. High-power density of I/O capacitors can be achieved through two-phase interleaved method. The high-power density of inductors can be achieved because the offset current of magnetizing inductance is theoretically terminated by using the differential mode coupled inductor instead of using two single inductors. The validity of the proposed converter is proved through the 50 kW prototype.

• 한국생물공학회:학술대회논문집
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• 2001.11a
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• pp.823-826
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• 2001

In the initial process of photosynthesis, a biological electron transfer system, photoelectric conversion occurs and then long-range electron transfer takes place very efficiently in one direction through the biomolecules. The metal/insulator/metal structured device consisting of GFP, viologen, cytochrome c hetero-thin film was presented based on the biomimesis. GFP, viologen, and cytochrome c was used as an electron sensitizer, a mediator, and an electron acceptor. Cytochrome c molecules and viologen molecules were deposited by Langmuir-Blodgett (LB) technique, and GFP molecules were adsorbed by self-assembly method (SAM). Surface morphology of hetero-thin film was analyzed by scanning tunneling microscopy (STM). Local photoswitching effects of a proposed photodiode were verified by current-voltage measurements using hybrid STM/I-V measurement system.

• Journal of Energy Engineering
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• v.11 no.3
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• pp.254-261
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• 2002

The fabrication method for the main components of the polymer electrolyte membrane fuel cell stack such as electrodes, membrane-electrode assemblies, and bipolar plates was established for the effective electrode area of 240 ㎠. A counter-flow type 100-cell stack was fabricated by using the above components and then a maximum power of 7.44 kW for H$_2$/O$_2$ and 5.56 kW for H$_2$/air could be obtained at 70$\^{C}$ and 1 atm. It was seen that the distribution of the OCV for unit cells in the stack was uniform but the voltage deviation increased as the load increased due to the IR drop and the electrode polarization. The stack was applied to the power source of the fuel cell/battery hybrid electric golf car. It produced about 1 kW at a room temperature operation during the test run, which occupied about 43% of the total power required by the 2.3 kW motor.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.4
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• pp.17-22
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• 2009

Two different organic-inorganic hybrid thin film transistors (OITFTs) with the structures of glass/ITO/ZnO/PMMA/Al (staggered structure) and glass/ITO/PMMA/ZnO/Al (inverted staggered structure), were fabricated and their electrical and structural properties were compared. The ZnO thin films used as active channel layers were deposited by the atomic layer deposition (ALD) method at a temperature of $100^{\circ}C$. To investigate the effect of the substrates on their properties, the ZnO films were deposited on bare glass, PMMA/glass and ITO/glass substrates and their crystal properties and surface morphologies were analyzed. The structural properties of the ZnO films varied with the substrate conditions. The ZnO film deposited on the ITO/glass substrate showed better crystallinity and morphologies, such as a higher preferred c-axis orientation, lower FWHM value and larger particle size compared with the one deposited on the PMMA/glass substrate. The field effect mobility ($\mu$), threshold voltage ($V_T$) and $I_{on/off}$ switching ratio for the OITFT with the staggered structure were about $0.61\;cm^2/V{\cdot}s$, 5.5 V and $10^2$, whereas those of the OITFT with the inverted staggered structure were found to be $0.31\;cm^2/V{\cdot}s$, 6.8 V and 10, respectively. The improved electrical properties for the staggered OITFTs may originate from the improved crystal properties and larger particle size of the ZnO active layer.

• Proceedings of the KIEE Conference
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• 1995.07a
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• pp.160-164
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• 1995

In order to develop a medium voltage class gas circuit breaker by our own technology, we designed and manufactured the model interrupters using the hybrid arc extinguishing principle which adopts the thermal expansion principle in the large current region and the arc rotation principle by permanent magnet in the small current region. As the results of the first year research out of three years' research period, the main design parameters such as the volume of thermal expansion chamber, the distance between fixed contact and nozzle, the length of nozzle throat, the nozzle expansion angle and the magnitude of permanent magnet etc. have been determined. 4 types of model interrupters have been designed and manufactured considering the main design parameters. The 25kA short-circuit test and capacitive current breaking test have been performed for the model interrupters and the test results analyzed to improve the model interupters.