• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.2
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• pp.131-139
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• 1996

Inthis apper wa analyzed the channel-hot-electron programming characteristics of the single-poly EEPROM with different control gate and drain structures. The single-poly EEPROM uses the p$^{+}$/n$^{+}$-diffusion in the n-well as a control gate instead of the second poly-silicon. The program and erase characteristics of the single-poly EEPROM were verified using the two-dimensional device simulator, MEDICI. The single-poly EEPROM was fabricated using 0.8$\mu$m ASIC CMOS process, and its CHE programming characteristics were measured using HP4155 parameteric analyzer and HP8110 pulse gnerator. Especially we investigated the CHE programming characteristics of the single-poly EEPROM with the p$^{+}$-diffusion or n$^{+}$-diffusion in the n-well as a control gate and the LDD or single-drain structure. The single-poly EEPROM with p$^{+}$-diffusion in the n-well as a control gate and single-drain structure was programmed to about VT$\thickapprox$5V with VDS=6V, VCG=12V(1ms pulse width).th).

• Transactions of the Korean Society of Mechanical Engineers B
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• v.23 no.6
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• pp.753-760
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• 1999

Experiments were conducted to investigate the effect of the initial turbulent intensity on the flow and heat transfer characteristics for a two-dimensional impinging jet. A square rod was installed at the nozzle exit to increase initial turbulent intensity. A hot wire probe and thermochromic liquid crystal technique were used to measure the turbulent intensity and the surface temperature. All measurements were made over a range of nozzle-to-plate distance from 1 to 10 at Re=20,000. When the rod is not installed, the maximum stagnation point Nusselt number is occurred at H/B=9. A higher initial turbulent intensity enhanced the heat transfer on the surface. A correlation between stagnation point Nusselt number and turbulent intensity are presented.

• Proceedings of the Korea Society for Energy Engineering kosee Conference
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• 1998.10a
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• pp.150-160
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• 1998

Measuring temperature with ultrasonic wave apparatus is desirable in the case of both below 300$0^{\circ}C$ and ideal gas because of the fact that the temperature of gas is the function of only sound velocity. In this study, being used a heatable wind channel and a blower, the variation of temperature is observed in accordance with diverse flow rate(air velocity). The frequency modulation method is used to measure the temperature which is varying in hot air flow till 10$0^{\circ}C$. The length changed in the position of ultrasonic sensors is considered. Also, the effects of air velocity at the same temperature and various facing angles of ultrasonic sensors are considered. As a result of this study, it has been found that the temperature in gas flow is correctly measured regardless of both the distance of ultrasonic sensors and the variation of air velocity, and that there is just a little influence of facing angles.

• Transactions on Electrical and Electronic Materials
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• v.5 no.5
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• pp.173-179
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• 2004

The influence of heavily Si impurity doping in the GaN barrier of InGaN/GaN multi-quantum well structures of blue light emitting diodes were investigated by growing samples in metal-organic chemical vapor deposition. The delta-doped sample was compared to the sample with the undoped barrier. The delta-doped sample shows the tunneling behavior and forms the energy level of 0.32 eV for tunneling and the photoemission of the 450-nm band. The photo-luminescence shows the blue-shifted broad band of the radiative transition due to the inclusion of Si delta-doped layer indicating that the delta doping effect acts to form the higher energy level than that of quantum well. The dislocation may provide the carrier tunneling channel and plays as a source of acceptor. During the tunneling of hot carrier, there was no light emission.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1301-1302
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• 2006

Sintered composites of Al-8wt%Cu-10vol%SiCp were deformed by repressing or equal channel angular pressing(ECAP) at room temperature, $500^{\circ}C$ and $600^{\circ}C$. Repressing produced more densification than ECAP but resulted in much lower transverse rupture strengths. In both cases, deformation at room temperature and $500^{\circ}C$, resulted in much lower strengths than deformation at $600^{\circ}C$, and also caused the fracturing of some SiC particles. The higher bend strengths and less SiC fracturing at $600^{\circ}C$ are attributable to the presence of an Al-Cu liquid phase during deformation. The employment of copper coated SiC instead of bare SiC particles for preparing the composites was found not improving the properties.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.23 no.7
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• pp.893-900
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• 1999

Measuring temperature with ultrasonic wave apparatus is desirable in the cue of gas below $300^{\circ}$ because of the fact that the temperature of gas is the function of only sound velocity. In this study, being used a heatable wind channel and a blower. the variation of temperature is observed in accordance with flow rate(air velocity). The frequency modulation method is used to measure the temperature which is varying in hot air flow up to $100^{\circ}$. The length changed in the position of ultrasonic sensors is considered. Also. the effects of air velocity at the same temperature and various facing angles of ultrasonic sensors are considered. As a result of this study. it has been found that the temperature in gas flow is correctly measured regardless of both the distance of ultrasonic sensors and the variation of air velocity. and that there is just a little influence of facing angles.

• Steel and Composite Structures
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• v.6 no.5
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• pp.435-457
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• 2006

The paper presents the cost optimization of composite floor trusses composed from a reinforced concrete slab of constant depth and steel trusses consisting of hot rolled channel sections. The optimization was performed by the nonlinear programming approach, NLP. Accordingly, a NLP optimization model for composite floor trusses was developed. An accurate objective function of the manufacturing material, power and labour costs was proposed to be defined for the optimization. Alongside the costs, the objective function also considers the fabrication times, and the electrical power and material consumption. Composite trusses were optimized according to Eurocode 4 for the conditions of both the ultimate and the serviceability limit states. A numerical example of the optimization of the composite truss system presented at the end of the paper demonstrates the applicability of the proposed approach.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.5
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• pp.372-377
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• 2003

To realize a high integrated flash memory utilizing SONOS memory devices, the NOR type ITC(one Transistor Cell) SONOS flash arrays are fabricated and characterized. This SONOS flash arrays with the common source lines are designed and fabricated by conventional 0.35$\mu\textrm{m}$ CMOS process. The thickness of ONO for memory cells is tunnel oxide of 34${\AA}$, nitride of 73${\AA}$ and blocking oxide of 34${\AA}$ . To investigate operating characteristics, CHEI(Channel Hot Electron Injection) method and bit line method are selected as the program and 4he erase operation, respectively. The disturbance characteristics ,according to the program/erase/read cycling are also examined. The degradation characteristics are investigated and then the reliability of SONOS flash memory is guaranteed.

• Proceedings of the KIEE Conference
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• 1994.11a
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• pp.382-384
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• 1994

Wireless communication has become a hot issue for its simplicity. Using light wave instead of micro wave has many advantages. It is simple to design a circuit because we can make a circuit with discrete components such as photo diode, photo detector, OP Amp[2]. And we can have many communication channels for we can use every frequency domain. In this paper, we design the wireless communication system and analyze the pulse signal. Then using ray tracing technology we simulate the distribution of light beam.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.457-460
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• 1999

The effects of electrical positive stress on n-channel LDD and offset structured poly-Si TFT\`s have been systematically investigated in order to analyze the transfer curve\`s shift mechanism. It has been found that the LDD and offset regions behave as a series resistance that reduce the electric field near drain. Hot carrier effects are reduced because of these results. After electrical stress transfer curve’s shift and variation of the off-current are dependent upon the offset length rather than offset region’s doping concentration. Variation of the subthreshold slope is dependent upon offset region’s doping concentration as well as offset length.