• Advances in nano research
• /
• 제2권1호
• /
• pp.1-14
• /
• 2014

Dislocations are basic crystal defects and represent one-dimensional native nanostructures embedded in a perfect crystalline matrix. Their structure is predefined by crystal symmetry. Two-dimensional, self-organized arrays of such nanostructures are realized reproducibly using specific preparation conditions (semiconductor wafer direct bonding). This technique allows separating dislocations up to a few hundred nanometers which enables electrical measurements of only a few, or, in the ideal case, of an individual dislocation. Electrical properties of dislocations in silicon were measured using MOSFETs as test structures. It is shown that an increase of the drain current results for nMOSFETs which is caused by a high concentration of electrons on dislocations in p-type material. The number of electrons on a dislocation is estimated from device simulations. This leads to the conclusion that metallic-like conduction exists along dislocations in this material caused by a one-dimensional carrier confinement. On the other hand, measurements of pMOSFETs prepared in n-type silicon proved the dominant transport of holes along dislocations. The experimentally measured increase of the drain current, however, is here not only caused by an higher hole concentration on these defects but also by an increasing hole mobility along dislocations. All the data proved for the first time the ambipolar behavior of dislocations in silicon. Dislocations in p-type Si form efficient one-dimensional channels for electrons, while dislocations in n-type material cause one-dimensional channels for holes.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
• /
• pp.21-24
• /
• 2003

The understanding of the mechanism of device degradation has been accomplished recently, for devices using $AlQ_3$ electron transport and emitter molecule. In this presentation the experimental evidence for the degradation mechanism of $AlQ_3$ based devices will be reviewed, showing that the hypothesis of an unstable $AlQ_3^+$ cation explains a large amount of experimental data. This hypothesis, however, explains not only the room temperature device degradation in time but also sheds light on temperature stability of OLEDs. Dependence of half-life of a series of devices with an emitter layer composed of a mixture of $AlQ_3$ and different hole transport molecules (mixed emitter layer) will be discussed when they are operated at elevated temperatures. These results can also be explained in the framework of an unstable $AlQ_3^+$ species. An OLED structure containing a doped mixed emitter layer will be described, which shows extraordinary stability, half-life of 1200 hours at operating temperature of 70 C and initial luminance of 1650 $cd/m^2$. We will also discuss a novel Black $Cathode^{TM}$ OLED with reduced optical reflectivity, which is also stable at elevated temperatures. The new cathode utilizes a conductive light-absorbing layer made of a mixture of metals and organic materials.

• 대한전기학회논문지
• /
• 제45권4호
• /
• pp.562-567
• /
• 1996

A new lateral MOS controlled thyristor, named Shorted Anode LMCT(SA-LMCT), is proposed and analyzed by a two-dimensional device simulation. The device structure employs the implanted n+ layer which shorts the p+ anode together by a common metal electrode and provides a electron conduction path during turn-off period. The turn-off is achieved by not only diverting the hole current through the p+ cathode short but also providing the electron conduction path from the n-base into the n+ anode electrode. In addition, the modified shorted anode LMCT, which has an n+ short junction located inside the p+ anode junction, is also presented. It is shown that the modified SA-LMCT enjoys the advantage of no snap-back behavior in the forward characteristics with little sacrificing of the forward voltage drop. The simulation result shows that the turn-off times of SA-LMCT can be reduced by one-forth and the maximum controllable current density may be increased by 45 times at the expense of 0.34 V forward voltage drop as compared with conventional LMCT. (author). 11 refs., 6 figs., 1 tab.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
• /
• pp.185-188
• /
• 2001

In this study, $Al_2$O$_3$films have been deposited with Atomic Layer Deposition(ALD) for gate insulator for MPTMA and $H_2O$ at low temperature below 40$0^{\circ}C$ . Conventional methods of $Al_2$O$_3$thin film deposition have suffered from the poor step coverage due to reduction of device dimension and increasing contact/via hole aspect ratio. ALD is a self-limiting growth process with controlled surface reaction where the growth rate is only dependent on the number of growth cycle and the lattice parameter of materials. ALD growth process has many advantages including accurate thickness control, large area and large batch capability, good uniformity, and pinholes freeness.

• 한국소음진동공학회:학술대회논문집
• /
• 한국소음진동공학회 2002년도 춘계학술대회논문집
• /
• pp.790-795
• /
• 2002

The object of this research is limited to the reduction of compression process noise only among the main sources of compressor noise such as motor noise, compression process noise, and valve port flow noise. Thus the research is focused on the wave motion rather than the particle motion of sound wave travels. A muffler is a commonly used device to reduce the compression process noise, generated by the pressure pulsations caused by the cyclic compression process. In this research, the acoustic characteristics of the muffler are analyzed by using the normal gradient integral equation proposed by Wu and Wan. Moreover, a commercial code SYSNOISE developed by indirect variational boundary integral equation is also used to validate the results. For the noise reduction, the topology optimization technique using a genetic algorithm is used. The number, size and position of the muffler holes are considered as design variables. Compared with original design, the optimized design has very improved acoustic characteristics. Both numerical and experimental analyses are used to evaluate new design.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제40회 동계학술대회 초록집
• /
• pp.283-283
• /
• 2011

The n-doping effect by doping metal carbonate into an electron-injecting organic layer can improve the device performance by the balanced carrier injection because an electron ohmic contact between cathode and an electron-transporting layer, for example, a high current density, a high efficiency, a high luminance, and a low power consumption. In the study, first, we investigated an electron-ohmic property of electron-only device, which has a ITO/$Rb_2CO_3$-doped $C_{60}$/Al structure. Second, we examined the I-V-L characteristics of all-ohmic OLEDs, which are glass/ITO/$MoO_x$-doped NPB (25%, 5 nm)/NPB (63 nm)/$Alq_3$ (32 nm)/$Rb_2CO_3$-doped $C_{60}$(y%, 10 nm)/Al. The $MoO_x$doped NPB and $Rb_2CO_3$-doped fullerene layer were used as the hole-ohmic contact and electron-ohmic contact layer in all-ohmic OLEDs, respectively, Third, the electronic structure of the $Rb_2CO_3$-doped $C_{60}$-doped interfaces were investigated by analyzing photoemission properties, such as x-ray photoemission spectroscopy (XPS), Ultraviolet Photoemission spectroscopy (UPS), and Near-edge x-ray absorption fine structure (NEXAFS) spectroscopy, as a doping concentration at the interfaces of $Rb_2CO_3$-doped fullerene are changed. Finally, the correlation between the device performance in all ohmic devices and the interfacial property of the $Rb_2CO_3$-doped $C_{60}$ thin film was discussed with an energy band diagram.

• 한국전기전자재료학회논문지
• /
• 제21권10호
• /
• pp.889-895
• /
• 2008

This paper presents a comprehensive mathematical analysis and simulation of trench IGBT with the help of PIN-PNP combinational model. Since trench IGBT is characteristically influenced by PIN diode, it may be almost impossible to analyze the trench IGBT using PNP-MOS modeling methods, even PIN-MOS techniques which neglect the hole current components coming into p-base region. A new PIN-PNP complementary cooperational model is developed in order to make up the drawbacks of existing models. It would allow us to make qualitative analysis as well as simulation about switching and on-state characteristics of 1,700 V trench IGBT. Moreover, if we improve the PIN diode effects through the optimization of trench structure, trench IGBT is expected to be one of the most promising devices in the not only high-voltage but also high speed switching device field.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.224-224
• /
• 2016

Many researchers have been tried to improve the performance of the phosphorescent organic light-emitting diode(PHOLED) by controlling of the dopant profile in the emission layer. In this work, as shown in Fig. 1 insert, a typical red PHOLED device which has the structure of ITO/NPB(50nm)/CBP(30nm)/TPBi(10nm)/Alq3(20nm)/LiF(0.8nm)/Al(100nm) is fabricated with a 5nm thick doping section in the emission layer. The doping section is formed by co-deposition of CBP and Ir(btp)2acac with a doping concentration of 8%, and it's location(x) is changed from HTL/EML interface to EML/HBL in 5nm steps. The current efficiency versus current density of the devices are shown in Fig. 1. By changing the location of doping section, as shown in Fig. 1 and 2, at x=5nm, the efficiency shows the maximum of 3.1 cd/A at 0.5 mA/cm2 and it is slightly decreased when the section is closed to HTL and slightly increased when the section is closed to HBL. If the doping section is closed to HTL(NPB) the excitons can be quenched easily to NPB's triplet state energy level(2.5eV) which is relatively lower than that of CBP(2.6eV). Because there is a hole accumulation at EML/HBL interface the efficiency can be increased slightly when the section is closed to HBL. Even the thickness of the doping section is only 5nm,. the maximum efficiency of 3.1 cd/A with x=5 is closed to that of the homogeneously doped device, 3.3 cd/A, because the diffusion length of the excitons is relatively long. As a result, we confirm that the current efficiency of the PHOLED can be improved by the doping profile optimization such as partially, not homogeneously, doped EML structure.

• 한국압력기기공학회 논문집
• /
• 제6권1호
• /
• pp.37-42
• /
• 2010

The stay cylinder weld at the steam generator of Korean Standard Nuclear Power Plants is safety class I component and is subjected to be inspected by the volumetric examination such as ultrasonic method. As accessibility of this area is limited due to the narrow space and high radiation, the existing manual inspection method involves various difficulties. Moreover operators may be exposed to internal contamination by contaminated dust during the surface buffing process to improve the inspection reliability of this area. Recently the new automatic inspection system for stay cylinder welds has been developed. The inspection system basically consists of a driving assembly, data acquisition device and signal processing units. The driving assembly is classified by 1) the scanner for inspecting and buffing the weld, 2) pillars for guiding the scanner and 3) the base frame for loading and supporting pillars. The scanner has 4 sensor modules to inspect in 4 refracted angles and 4 incident directions. These components can be inserted into the skirt of the stay cylinder through the manway hole and assembled easily by one-touch in the skirt. Data acquisition device and signal processing units developed in previous works are also newly upgraded for better processing of data analysis and evaluation. The system has been successfully demonstrated not only in the mock-up but also in the field. In this paper, newly developed inspection system for the stay cylinder weld of the steam generator is introduced and their field applications are discussed.

• 화약ㆍ발파
• /
• 제40권2호
• /
• pp.1-14
• /
• 2022

본 연구에서는 발파전색재료와 밀폐용 플러그 장치의 압력 구속 효과를 평가하기 위하여 충격챔버 모델을 구성하여 발파 수치해석을 수행하였다. 현재 개발 중인 전단농화유체 기반의 전색물질과 일반적으로 사용되고 있는 전색재료인 모래의 전색효과를 서로 비교하였다. 또한 발파공 내부압력의 구속효과 강화를 위한 세 가지 형태의 플러그 장치를 시뮬레이션에 적용하였다. 그 결과로서 전단농화유체 기반의 전색재료가 모래전색보다 전색효과가 더 우수한 것으로 나타났다. 또한 전단농화유체 기반의 전색물질과 플러그 장치를 복합적으로 사용하였을 때 발파공 내의 폭발가스의 작용 시간과 영향범위를 효과적으로 향상할 수 있을 것으로 분석되었다.