Characteristic Analysis of $Al_2$O$_3$Thin Films Grown by Atomic Layer Deposition

ALD법으로 성장시킨 $Al_2$O$_3$ 박막의 특성분석

  • 성석재 (경북대학교 전기전자공학부) ;
  • 김동진 (경북대학교 전기전자공학부) ;
  • 배영호 (위덕대학교 전자공학과) ;
  • 이정희 (경북대학교 전기전자공학부)
  • Published : 2001.06.01

Abstract

In this study, $Al_2$O$_3$films have been deposited with Atomic Layer Deposition(ALD) for gate insulator for MPTMA and $H_2O$ at low temperature below 40$0^{\circ}C$ . Conventional methods of $Al_2$O$_3$thin film deposition have suffered from the poor step coverage due to reduction of device dimension and increasing contact/via hole aspect ratio. ALD is a self-limiting growth process with controlled surface reaction where the growth rate is only dependent on the number of growth cycle and the lattice parameter of materials. ALD growth process has many advantages including accurate thickness control, large area and large batch capability, good uniformity, and pinholes freeness.

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