• 한국전기전자재료학회논문지
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• 제19권12호
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• pp.1112-1117
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• 2006

The properties of LTCC green tape with addition of binder were investigated in order to understand an effects of binder on multilayer processing. A green sheet form was fabricated through tape casting method with the MLS-22 powder. The lamination density increased with increasing amount of binder and lamination pressure. With increasing amount of binder, the elongation of ceramic sheets increased but the tensile stress and air-permeability decreased. The addition of excessive binder is caused defects in the green sheet during via hole punching. The optimum condition of the via hole without defects was observed from amount of the binder 10 wt%.

• 한국지구물리탐사학회:학술대회논문집
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• 한국지구물리탐사학회 2003년도 Proceedings of the international symposium on the fusion technology
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• pp.432-436
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• 2003

Geophysical well logging techniques which are useful for delineating permeability of geological formation have been reviewed. A new technique for obtaining permeability using conductivity log technique has been discussed. This conductivity logging technique has been tested by monitoring the conductivity change within the model hole using borehole environment water and incoming-outgoing water of different salinity with constant flow rate by maintaining balance between inflow and outflow. Conductivity variation features depended mainly on flow rate, density contrasts due to salinity and temperature contrasts between fluid within the hole and incoming-outgoing fluid. The results of the experiment show uniform change of fluid conductivity within bore hole with time, and a fairly good correlation between the flow rate and the conductivity change rate. This conductivity logging technique is expected to be an efficient tool for determining permeability.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2007년 추계학술발표대회 개요집
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• pp.218-221
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• 2007

The surface mounting technology of 0402 electric chip part is necessary to fabricate a high density and multi-functional module, but there is a limitation of the technology, like as a bridge and self-alignement. This work estimated SMT processing factors of 0402 chip. To obtain optimum SMT process, we evaluated effects of stencil thickness, shape of hole on printability and mountability. Printability shows best results under the thickness of $80{mu}m$ with circle hole shape and 90% square hole shape. In case of chip mounting process, chip mis-alignment and bridge was occurred rarely in same conditions. In more thin stencil thickness, $50{mu}m$, strength of 1005 chip parts was poor, because of amount of printed solder was insufficient.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권2호
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• pp.113-115
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• 2000

The gradual hole injection LIGBT (GI-LIGBT) which employs the dual gate and the p+ injector, was fabricated for eliminating a negative resistance regime and reducing a forward voltage drop in SA-LIGBT. The elimination of the negative resistance regime is successfully achieved by initiating the hole injection gradually. Furthermore, the experimental results show that the forward voltage drop of GI-LIGBT decreases by lV at the current density of 200 $A/cm^2$, when compared with that of the conventional SA-LIGBT. It is also found that the improvement in the on-state characteristics can be obtained without sacrificing the inherent fast switching characteristics of SA-LIGBT.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.758-761
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• 2009

The electroluminescent devices with the phenylnaphthyldiamine HTMs as the hole-transporting layer were more efficient than that with the biphenyldiamine HTM 1. Particularly, the life-time of the device IV using HTM 2 is about two times longer than that of the reference device III with HTM 1 within the measured current density, indicating more effective recombination at the emitting layer of device IV.

• 대한기계학회논문집B
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• 제29권10호
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• pp.1111-1118
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• 2005

In this study, a unified numerical investigation has been performed on the evolution of weld pool and key-hole geometry during low-power and high-power density laser welding. Unsteady phase-change heat transfer and fluid flow with the surface tension are examined. The one-dimensional vaporization model is introduced to model the overheated surface temperature and recoil pressure during high-power density laser welding. It is shown that Marangoni convection in the weld pool is dominant at low-power density laser welding, and the keyhole with thin liquid layer and the hump are visible at high-power density laser welding. It is also shown that the transition from conduction welding to penetration welding fur iron plate exists when the laser power density is about $10^6W/Cm^2$.

• 한국자동차공학회논문집
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• 제12권5호
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• pp.19-24
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• 2004

Entrainment of ambient gas into a transient diesel spray is a crucial factor affecting the following preparation of combustible mixture. In this study, the entrainment characteristics of ambient gas for a non-evaporating transient diesel were investigated using a common-rail injection system. The effects of ambient gas density and nozzle hole geometry were assessed with entrainment coefficient. Laser Doppler Velocimetry (LDV) technique was introduced to measure the entrainment speed of ambient gas into a spray. There appeared a region where the entrainment coefficients remained almost constant while injection rates were still changing. The effect of common-rail pressure, which altered the slope of injection rate curve, was hardly noticed at this region. Entrainment coefficient increased with ambient gas density, that is, the effect of ambient gas density was greater than that of turbulent jet whose entrainment coefficient remained constant. The non-dimensional distance was defined to reflect the effect of nozzle hole diameter and ambient gas density together. The mean value of entrainment coefficient was found to increase with non-dimensional distance from the nozzle tip, which would be suggested as the guideline for the nozzle design.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.147-147
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• 2015

The multilayer structure of the organic light emitting diode has merits of improving interfacial characteristics and helping carriers inject into emission layer and transport easier. There are many reports to control hole injection from anode electrode by using transition metal oxide as an anode buffer layer, such as V2O5, MoO3, NiO, and Fe3O4. In this study, we apply thin films of LiF which is usually inserted as a thin buffer layer between electron transport layer(ETL) and cathode, as an anode buffer layer to reduce the hole injection barrier height from ITO. The thickness of LiF as an anode buffer layer is tested from 0 nm to 1.0 nm. As shown in the figure 1 and 2, the luminous efficiency versus current density is improved by LiF anode buffer layer, and the threshold voltage is reduced when LiF buffer layer is increased up to 0.6 nm then the device does not work when LiF thickness is close to 1.0 nm As a result, we can confirm that the thin layer of LiF, about 0.6 nm, as an anode buffer reduces the hole injection barrier height from ITO, and this results the improved luminous efficiency. This study shows that LiF can be used as an anode buffer layer for improved hole injection as well as cathode buffer layer.

• 화약ㆍ발파
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• 제31권2호
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• pp.32-39
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• 2013

일반적으로 장공발파 방법은 과거 대규모 채탄막장이나 댐 기초굴착, 광산 등에서 행하여져 왔으나, 최근 우리나라에서 신설되는 토목터널에서 시공 효율성 및 경제성을 목적으로 많이 실시되고 있다. 고속국도제 600호선 부산외곽 고속도로 ${\bigcirc}$공구 또한 총연장 약 8km의 4차선 대단면 도로 터널로서 Type I, II, 4.4m 장공발파를 실시하는 현장이다. 그러나 당 현장에서는 발파 후 굴진율이 약 75%에 그쳐 발파 후속작업 시간에 영향을 미치게 되고 그로 인하여 전체 작업공정 시간이 증가하여 계획된 굴진을 못하는 현상이 자주 발생되었다. 본 논문에서는 당 현장에서 위 문제를 극복하기 위하여 실시된 장공발파 공법 중 천공경과 가장 밀장전 할 수 있는 ${\phi}36mm$폭약을 적용하여 굴진효율을 향상시키고 작업공정 시간을 단축시킨 사례를 소개하고자 한다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.152-152
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• 2011

Silicon 기반의 환경에서 연구 및 제조되는 전자소자는 반도체의 기술이 발전함에 따라 chip 선폭의 크기가 30 nm에서 20 nm, 그리고 그 이하의 크기로 점점 더 작아지는 요구에 직면하고 있다. 탄소나노 구조와 나노와이어 기술이 Silicon을 대신할 다음세대 기술로 주목받고 있다. 많은 연구결과들 중에서 III-V CMOS가 가장 빠른 접근 방법이라 예상한다. III-V족 물질을 이용하면 electron 보다 수십 배 이상의 이동도를 얻을 수 있으나 p-type의 구조를 구현하는 것이 해결해야 할 문제이다. p-type 3-5 족 화합물을 이용하여 에너지 밴드 갭의 변화를 가능하게 한다면 hole의 이동도를 크게 향상시킬 수 있어 silicon 기반의 p-type 소자보다 2~3배 더 빠른 소자의 구현이 가능하다. 3-5족 화합물 반도체의 성장 기술이 많이 진보되어 이를 이용하여 고속 소자를 구현한다면 시기적으로 더욱 빨리 다가올 것이라 예측한다. 에너지 밴드갭의 변화와 격자 부정합을 고려하여 SI InP 기판에 GaSb 물질을 채널로 사용한 p-type 2-dimensional hole gas (2DHG) 소자를 구현하였다. 관찰된 소자 구조의 박막 상태의 특징을 보이며 10 um ${\times}$ 10 um AFM 측정결과 1 nm 이하의 표면 거칠기를 가지며 상온에서의 hole 이동도는 약 650 cm2/Vs이고 sheet carrier density는 $5{\times}1012$ /cm2의 결과를 확인하였다. 실험결과 InP 기판위에 채널로 사용된 GaSb 박막을 올리는데 있어 가장 중요한 것은 Phosphorus, Arsenic, 그리고 Antimony 물질의 양과 이들의 변화시간의 조절이다. 본 발표에서 Semi-insulating InP 기판위에 electron이 아닌 hole을 반송자로 이용한 차세대 고속 전자소자를 구현하고자 하여 MBE (Molecular Beam Epitaxy)로 p-type 소자를 구현하여 실험하였다. 아울러 더욱 빠른 소자의 구현을 위하여 세계의 유수 그룹들의 연구 결과들과 앞으로 예상되는 고속 소자에 대해서 비교와 함께 많은 기술에 대해 논의하고자 한다.