The Transactions of the Korean Institute of Electrical Engineers C (대한전기학회논문지:전기물성ㆍ응용부문C)

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지

A New Snap-back Suppressed SA-LIGBT with Gradual Hole Injection

점진적인 홀의 주입을 통해 스냅백을 억제한 새로운 구조의 SA-LIGBT

  • Published : 2000.02.01
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Abstract

The gradual hole injection LIGBT (GI-LIGBT) which employs the dual gate and the p+ injector, was fabricated for eliminating a negative resistance regime and reducing a forward voltage drop in SA-LIGBT. The elimination of the negative resistance regime is successfully achieved by initiating the hole injection gradually. Furthermore, the experimental results show that the forward voltage drop of GI-LIGBT decreases by lV at the current density of 200 $A/cm^2$, when compared with that of the conventional SA-LIGBT. It is also found that the improvement in the on-state characteristics can be obtained without sacrificing the inherent fast switching characteristics of SA-LIGBT.

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References

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