• Current Applied Physics
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• v.18 no.11
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• pp.1248-1254
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• 2018

Magnetization versus temperature and magnetic-field measurements, M(T, $H_a$), have been carried out to study the magnetic and critical properties of polycrystalline $La_{1-x}Ba_xCoO_3$ (x = 0.3 and 0.5) cobaltites. These compounds with the density of ${\sim}6.2g/cm^3$ crystallized in the $R{\bar{3}}c$ rhombohedral and $Pm{\bar{3}}m$ cubic structures, respectively. With an applied field $H_a=200Oe$, M(T) data have revealed that the samples with x = 0.3 and 0.5 exhibit the ferromagnetic-paramagnetic (FM-PM) phase transition at the Curie temperature points $T_C=202$ and 157 K, respectively. At 4.2 K, the saturation magnetization ($M_{sat}$) decreases from 35.9 emu/g for x = 0.3-26.1 emu/g for x = 0.5. Particularly, the critical-behavior analyses in the vicinity of $T_C$ reveal all samples undergoing a second-order phase transition, with critical exponent values (${\beta}=0.328$ and ${\gamma}=1.251$ for x = 0.3, and ${\beta}=0.331$ and ${\gamma}=1.246$ for x = 0.5) close to those expected for the 3D Ising model. This proves short-range magnetic order existing in $La_{1-x}Ba_xCoO_3$. We believe that magnetic inhomogeneities due to the mixture of hole-rich FM regions (confined in the trivalent-cobalt hole-poor anti-FM matrix) and uniaxial anisotropy prevent long-range order in $La_{1-x}Ba_xCoO_3$.

• Korean Journal of Metals and Materials
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• v.46 no.3
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• pp.169-173
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• 2008

Characteristics of etching and induced surface morphology variation by wet-etching of n-type GaN were investigated using phosphoric acidic solutions. Generally, the etch-rate was increased as the temperature of the etch solutions was increased, and the highest etch rate of about $300{\AA}/min$ was achieved at the temperature of $180^{\circ}C$. The morphology variation of the etched surface was observed by optical microscopy and atomic force microscopy. Initially, high density of hexagonal holes or pits were formed on the etched surface at the time of 40 min with the bimodal size of $20{\mu}m$ or $5{\mu}m$, respectively. However, as the etching time was increased further, the lateral size of the hexagonal holes or pits was increased, and finally, joined and merged together at the time of 100 min. This means that the etching of n-type GaN by phosphoric acidic solutions proceeded through the lateral widening and the merging of initial holes and pits.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.285-295
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• 1999

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays. They are attractive because of their capability of multi-color emission, and low operation voltage. An approach to realize such device characteristics is to use active layers of lanthanide complexes with their inherent extremely sharp emission bands in stead of commonly known organic dyes. In general, organic molecular compounds show emission due to their $\pi$-$\pi*$ transitions resulting in luminescence bandwidths of about 80 to 100nm. Spin statistic estimations lead to an internal quantum efficiency of dye-based EL devices limited to 25%. On the contrary, the fluorescence of lanthanide complexes is based on an intramolecular energy transfer from the triplet of the organic ligand to the 4f energy states of the ion. Therefore, theoretical internal quantum efficiency is principally not limited. In this study, Powders of TPD, $Eu(TTA)_3(phen) and AlQ_3$ in a boat were subsequently heated to their sublimation temperatures to obtain the growth rates of 0.2~0.3nm/s. Organic electrolumnescent devices(OELD) with a structure of $glass substrate/ITO/Eu(TTA)_3(phen)/AI, glass substrate/ITO/TPD/Eu(TTA)_3(phen)/AI and glass substrate/ITO/TPD/Eu(TTA)_3(phen)/AIQ_3AI$ structures were fabricated by vacuum evaporation method, where aromatic diamine(TPD) was used as a hole transporting material, $Eu(TTA)_3(phen)$ as an emitting material, and Tris(8-hydroxyquinoline)Aluminum$(AlQ_3)$ as an electron transporting layer. Electroluminescent(EL) and current density-voltage(J-V) characteristics of these OELDs with various thickness of $Eu(TTA)_3(phen)$ layer were investigated. The triple-layer structure devices show the red EL spectrum at the wavelength of 613nm, which is almost the same as the photoluminescent(PL) spectrum of $Eu(TTA)_3(phen)$.It was found from the J-V characteristics of these devices that the current density is not dependent on the applied field, but on the electric field.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.9
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• pp.655-662
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• 2016

We investigated on the usefulness of MAR algorithm by making a comparison of the CT value between before and after applying the MAR algorithm in dual energy CT, using the various kinds of medical metals, causing the artifact to lead to the low image quality. As a result, the artifact was reduced in most cases (P<0.05); in particular, the artifact was highly reduced (P<0.05) using high density material, like alloy-stainless (reduced by 78.1%) and platinum, for example GDC coil (reduced by 76.1%). The effect of decreasing the Black hole artifact was outstanding in both the alloy-stainless and alloy-titanium (P<0.05). However, in case of GDC coil-a type platinum, white streak artifact was reduced effectively (P<0.05). Therefore, in case of patients who have medical metals inserted, we think that high-quality image information can be provided by decreasing the artifact caused by high density material through MAR algorithm in dual energy CT.

• 전자공학회논문지 IE
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• v.43 no.4
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• pp.1-7
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• 2006

In this paper, two types of blue organic light-emitting device were designed. We have analyzed the characteristics of Type I device without a hole blocking layer, and analyzed the characteristics of Type II device using a hole blocking layer of BCP or BAlq materials with 30 ${\AA}$ thickness. We obtained the ITO having the work function value of 5.02 eV using $N_2$ plasma treatment method with the plasma power 200 W. Type I device structure was ITO/2-TNATA/$\alpha$-NPD/DPVBi/$Alq_3$/LiF/Al:Li, and type II device structure was ITO/2-TNATA/$\alpha$-NPD/DPVBi/HBL/$Alq_3$/LiF/Al:Li. We have analyzed the characteristics of Type I and Type II device. The characteristics of the device were most efficiency on occasion of using a hole blocking layer of BAlq material with 30 ${\AA}$ thickness. Current density was 226.75 $mA/cm^2$, luminance was 10310 $cd/m^2$, Current efficiency was 4.55 cd/A, power efficiency was 1.43 lm/W at an applied voltage of 10V. The maximum EL wavelength of the fabricated blue organic light-emitting device was 456nm. The full-width at half-maximum (FWHM) for the EL spectra was 57nm. CIE color coordinates were x=0.1438 and y=0.1580, which was similar to NTSC deep-blue color with CIE color coordinates of x=0.14 and y=0.08.

• Journal of the Korean Society for Marine Environment & Energy
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• v.4 no.4
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• pp.21-31
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• 2001

When an oil-spilling accident occurs at sea, it is of the primary importance to predict the amount of oil leakage for the swift response and decision-making. The simplest method of oil-leakage estimation is based on the hydrostatic pressure balance between oil inside the tank and seawater outside of leakage hole, that is the so-called Torricelli equilibrium relation. However, there exists discrepancy between the reality and the Torricelli relation, since the latter is obtained from the quasi-steady treatment of Bernoulli equation ignoring viscous friction. A preliminary experiment has been performed to find out the oil-leaking speed and shape. Soy-bean oil inside the inner tank was ejected into water of the outer tank through four different leakage holes to record the amount of oil leakage. Furthermore, a CFD (Computational Fluid Dynamics) method was utilized to simulate the experimental situation. The Wavier-Stokes equations were solved for two-density flow of oil and water. VOF method was employed to capture the shape of their interface. It is found that the oil-leaking speed varies due to the frictional resistance of the leakage hole passage dependent on its aspect ratio. The Torricelli factor relating the speed predicted by using the hydrostatic balance and the real leakage speed is assessed. For the present experimental setup, Torricelli factors were in the range of 35%~55% depending on the aspect ratio of leakage holes. On the other hand, CFD results predicted that Torricelli factor could be 52% regardless of the aspect ratio of the leakage holes, when the frictional resistance of leakage hole passage was neglected.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.2
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• pp.39-46
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• 2013

In this paper, organic solar cells(OSCs) based on bulk-heterojunction structures were fabricated by spin coating method using polymer P3HT and fullerene PCBM as a photoactive layer. The fabricated OSCs had a simple glass/ITO/PEDOT:PSS/P3HT:PCBM/Al structures. The photoactive layer of mixed P3HT:PCBM was formed with 1:1 weight ratio. The hole transport layer(HTL) was used conducting polymer PEDOT:PSS concentration with gold nanoparticles. The annealing temperature and concentration of nanoparticles in HTL were verified to improve the OSC characterization. The percentage of gold nanoparticles in HTL were 0.5 wt% and 1.0 wt%, and the surface morphology, electrical properties and absorption intensities were investigated. The devices were 0.5 wt%, and the highest 3.1% of the powder conversion efficiency(PCE), 10.2 $mA/cm^2$ of the maximum short circuit current density($J_{SC}$), 0.535V of the open circuit voltage($V_{OC}$) and 55.8% of the fill factor(F.F) could be obtained when the nanoparticle concertration was 0.5 wt%. The annealing temperature of HTL was $110^{\circ}C$, $130^{\circ}C$, $150^{\circ}C$ in vacuum oven and measured the absorption intensities, surface morphology, crystallinity and electrical properties were investigated. The best property was obtained in HTL annealed at $130^{\circ}C$ for gold nanoparticles of 0.5 wt%, showing that $J_{SC}$, $V_{OC}$, F.F and PCE were about 12.0 $mA/cm^2$, 0.525V, 64.2% and 4.0%, respectively.

• Journal of the Korean Society of Safety
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• v.32 no.5
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• pp.168-178
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• 2017

In order to prevent major and chemical accidents, some of the plants which would like to install and operate hazard chemicals handling facilities must submit Off-site Consequence Analysis due to recent arisen leak accidents since 2015. A lot of chemical industrials choose gas detectors as mitigation equipment to early detect gas vapor. The way of placement of gas detectors has two methods; Code-based Design(CBD) and Performance-based Design. The CBD has principles for gas detectors to be installed with consideration for the place that is expected to accumulate gas, and the leak locations according to legal standards and technical guidelines, and has a possibility to be unable to detect by these rules to locate gas detectors by vapor density information. The PBD has two methods; a Geographic Method and Scenario based Method. The Scenario-based Method has been suggested to make up for the Geographic Coverage Method. This Scenario-based Method draw the best optimum placement of gas detectors by considering leak locations, leak speed information, leak directions and etc. However, the domestic placement guidelines just refers to the CBD. Therefore, this study is to compare existing placement location of gas detectors by the domestic CBD with placement locations, coverages and the number of gas detectors in accordance with the Scenario-based Method. Also this study has measures for early detecting interest of Vapor Cloud and suitable placement of gas detectors to prevent chemical accidents. The Phast software was selected to simulate vapor cloud dispersion to predict the consequence. There are two cases; an accident hole size of leak(8 mm) from API which is the highst accident hole size less than 24.5 mm, and a normal leak hole size from KOSHA Guide (1.8 mm). Detect3D was also selected to locate gas detectors efficiently and compare CBD results and PBD results. Currently, domestic methods of gas detectors do not consider any risk, but just depend on domestic code methods which lead to placement of gas detectors not to make personnels recognize tolerable or intolerable risks. The results of the Scenario-based Method, however, analyze the leak estimated range by simulating leak dispersion, and then it is able to tell tolerable risks. Thus it is considered that individuals will be able to place gas detectors reasonably by making objectives and roles flexibly according to situations in a specific plant.

• Journal of IKEEE
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• v.24 no.3
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• pp.699-705
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• 2020

In this study, a facial way to enhance the electrical properties of organic light-emitting diodes (OLEDs) via the solution process doping method based on the poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl) diphenylamine)] (TFB) as a hole transporting layer (HTL) is demonstrated. In the TFB solution of the hole transport material, 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HAT-CN) was doped by 3 wt% to improve the electrical properties of the HTL. According, the OLED with HAT-CN doped TFB showed the increased current density and luminance at the same driving voltage on behalf of the improved conductivity of HTL, and the reduced turn-on voltage from 13 V to 9 V. Furthermore, the maximum external quantum efficiency was dramatically increased three times from 3.6 to 10.8 % compared to the reference device without appling doping methode.

• Journal of the Korean Vacuum Society
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• v.14 no.4
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• pp.258-262
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• 2005

We report on the field emission properties from vertically aligned carbon nanotubes (CNTs) produced by a triode PECVD with a SiNx capping layer on metal catalyst. It is found that the CNTs density can be controlled by the capping layer thickness and decreases with increasing SiNx thickness. The CNT density of $\~$ 104/$cm^{2}$ exhibited highest electron emission characteristics, the threshold field of 1.2 V/$\mu$m and the current density of 0.17 mA/$cm^{2}$ at 3.6 V/$\mu$m. We have carried out investigation of electron emission stability under ambient gas of N2. The electron emission stability was improved with decreasing CNT density. Under $1\times$$10^{-5}$ Torr ambient pressure, the CNTs in 5 $\mu$m hole show electron emission current higher than $1\times$$10^{-4}$ A/cm2 and it's electron emission uniformity has $2\%$.